NTE104
Germanium PNP Transistor
Audio Frequency Power Amplifier
Description:
The NTE104 is a Germanium PNP Alloy Junction transistor in a TO3 type package designed as an
audio frequency power output amplifier.
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage (R
Emitter–Base Voltage, V
Collector Current, I
Emitter Current, I
Base Current, I
E
B
Power Dissipation (T
EBO
C
≤ +55°C), P
C
Operating Junction Temperature, T
Storage Temperature Range, T
(TA = +25°C unless otherwise specified)
CBO
= 68Ω), V
BE
D
J
stg
CER
50V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
35V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
10A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Matched pairs are available upon request (NTE104MP). Matched pairs have their gain
specification (h
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Emitter Breakdown Voltage V
Collector Cutoff Current I
DC Current Gain h
Base–Emitter Input Voltage V
Collector–Emitter Saturation Voltage V
Transition Frequency f
) matched to within 10% of each other.
FE
(TA = +25°C unless otherwise specified)
(BR)CERIC(peak)
CBO
FE
BE
CE(sat)IC
T
VCB = 30V, IE = 0 – – 1.0 mA
VCE = 2V, IC = 20mA 50 90 165
VCE = 2V, IC = 1A – 0.38 – V
VCB = 2V, IE = 1A – 300 – kHz
= –0.6A, RBE = 68Ω 35 – – V
= 4A, IB = 0.4A – 0.29 – V
.135 (3.45) Max
.350 (8.89)
.215 (5.45)
(10.92)
.430
Emitter
.875 (22.2)
Dia Max
Seating
Plane
.040 (1.02).312 (7.93) Min
1.187 (30.16)
.665
(16.9)
.156 (3.96) Dia
(2 Holes)
.188 (4.8) R Max
.525 (13.35) R Max
Collector/CaseBase