NTE NTE102A, NTE103A Datasheet

NTE102A (PNP) & NTE103A (NPN)

Germanium Complementary Transistors

Medium Power Amplifier

Description:

The NTE102A (PNP) and NTE103A (NPN) are Germanium complementary transistors in a TO1 type
package designed for use as a medium power amplifier.

Absolute Maximum Ratings:

(TA = +25°C unless otherwise specified)

Collector–Base Voltage, V

CBO

32V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Emitter–Base Voltage, V

EBO

10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Collector Current, I

C

1A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Power Dissipation, P

C

650mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T

J

+90°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Storage Temperature Range, T

stg

–55° to +90°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics:

(TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Base Voltage V

CBO

IC = 200µA, IE = 0 32 – – V

Collector Cutoff Current I

CBO

VCB = 10V, IE = 0 – – 25 µA

DC Current Gain h

FE1

VCB = 0, IE = 50mA 63 – 295

h

FE2

VCB = 0, IE = 300mA 69 – 273

Common–Emitter Cutoff Frequency f

α

e

VCB = 2V, IE = 10mA 10 – – kHz

Collector–Emitter Saturation Voltage V

CE(sat)IC

= 500mA, IB = 50mA – 0.17 – V

Noise Figure NF VCB = 5V, IE = 5mA, f = 1kHz – – 25 dB

.240 (6.09) Dia Max

.018 (0.45)

.071 (1.82) Dia

.410

(10.4)

Max

1.500
(38.1)

Min

Emitter

Base

Collector