NTE NTE102, NTE103 Datasheet
NTE102 (PNP) & NTE103 (NPN)
Germanium Complementary Transistors
Power Output, Driver
Description:
The NTE102 (PNP) and NTE103 (NPN) are Germanium complementary transistors designed for medium–speed saturated switching applications.
Features:
D Low Collector–Emitter Saturation Voltage:
V
CE(sat)
= 200mV Max @ IC = 24mA
D High Emitter–Base Breakdown Voltage:
V
(BR)EBO
= 12V Min @ IE = 20µA
Absolute Maximum Ratings:
Collector–Base Voltage, V
CBO
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage, V
CES
24V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Continuous Collector Current, I
C
150mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current, I
E
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
A
= +25°C), P
D
150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25° 2mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation (T
C
= +25°C), P
D
300mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above +25° 4mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Junction Temperature Range, T
J
–65° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Junction Temperature Range, T
stg
–65° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
OFF Characteristics
Collector–Base Breakdown Voltage V
(BR)CBOIC
= 20µA, IE = 0 25 – – V
Emitter–Base Breakdown Voltage V
(BR)EBOIE
= 20µA, IC = 0 12 – – V
Punch–Through Voltage V
PT
V
EBfl
= 1V, Note 1 24 – – V
Collector Cutoff Current I
CBO
VCB = 12V, IE = 0 – 0.8 5.0 µA
VCB = 12V, IE = 0, TA = +80°C – 20 90 µA
Emitter Cutoff Current I
EBO
VEB = 2.5V, IC = 0 – 0.5 2.5 µA
Note 1. VPT is determined by measuring the Emitter–Base floating potential V
EBfl
, using a voltmeter
with 11MΩ minimum input impedance. The Collector–Base Voltage, V
CB
, is increased until
V
EBfl
= 1V; this value of VCB = (VPT + 1).
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
ON Characteristics
DC Current Gain h
FE
VCE = 150mV, IC = 12mA 30 80 –
VCE = 200mV, IC = 24mA 24 90 –
Collector–Emitter Saturation Voltage V
CE(sat)IC
= 12mA, IB = 0.4mA – 0.09 0.15 V
IC = 24mA, IB = 1mA – 0.09 0.20 V
Base–Emitter Voltage V
BE
IC = 12mA, IB = 0.4mA – 0.27 0.35 V
IC = 24mA, IB = 1mA – 0.30 0.40 V
Small–Signal Characteristics
Alpha Cutoff Frequency f
hfb
VCB = 6V, IE = 1mA 4 25 – MHz
Output Capacitance C
ob
VCB = 6V, IE = 1mA, f = 1MHz – 8 20 pF
Input Impedance h
ie
VCE = 6V, IE = 1mA, f = 1MHz – 3.6 – kΩ
Voltage Feedback Ratio h
re
– 8 – x 10
–4
Small–Signal Current Gain h
fe
– 135 –
Output Admittance h
oe
– 50 – µmhos
Switching Characteristics
Delay Time t
d
– 0.07 – µs
Rise Time t
r
– 0.12 – µs
Storage Time t
s
– 0.20 – µs
Fall Time t
f
– 0.10 – µs
Stored Base Charge Q
sb
– 300 1400 pC
45°
.031 (.793)
.019 (0.5) Dia
Emitter
Base
Collector
.352 (8.95) Dia Max
.320 (98.13) Dia Max
.250 (6.35)
Max
1.500 (38.1)
Min
Loading...