NTE NTE100, NTE101 Datasheet
NTE100 (PNP) & NTE101 (NPN)
Germanium Complementary Transistors
Oscillator, Mixer for AM Radio,
Medium Speed Switch
Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V
CBO
25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector–Emitter Voltage (Note 1), V
CEO
NTE100 24V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE101 25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter–Base Voltage, V
EBO
NTE100 12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE101 25V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current, I
C
NTE100 100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
NTE101 300mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Emitter Current (NTE100 Only), I
E
100mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Total Device Dissipation, P
D
150mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Derate Above 25°C 2.5mW/°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Operating Collector Junction Temperature, T
J
+85°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Storage Temperature Range, T
stg
–65° to +100°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Note 1. Punch–through voltage.
Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector–Base Brteakdown Voltage
NTE100
V
(BR)CBO
IE = 0 IC = 20µA
25 – – V
NTE101 IC = 100µA 25 – – V
Emitter–Base Breakdown Voltage
NTE100
V
(BR)EBO
IC = 0 IE = 20µA
12 – – V
NTE101 IE = 100µA 25 – – V
Punch Through Voltage
NTE100
V
PT
V
EBfl
= 1V, Note 2
24 – – V
NTE101 25 – – V
Collector Cutoff Current
NTE100
I
CBO
IE = 0 VCB = 12V
– 1 5 µA
VCB = 12V, TA = +80°C – 40 90 µA
NTE101 VCB = 25V – 3 6 µA
Note 2. VPT is determined by measuring the Emitter–Base floating potential V
EBfl
. The Collector–
Base V oltage, V
CB
, is increased until V
EBfl
= 1V ; this value of VCB = (VPT + 1V). Care must
be taken not to exceed maximum Collector–Base Voltage specified under maximum ratings.
Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Emitter Cutoff Current
NTE100
I
EBO
IC = 0 VEB = 2.5V
– 1 2.5 µA
NTE101 VEB = 25V – 2 6 µA
Static Forward Current Transfer Ratio
NTE100
h
FE
VCE = 0.15V, IC = 12mA
30 100 –
VCE = 0.20V, IC = 24mA 24 110 –
NTE101 VCE = 1V, IC = 10mA 20 100 –
VCE = 0.35V, IC = 200mA 10 100 –
Base–Emitter Voltage
NTE100
V
BE
IB = 0.4mA, IC = 12mA
– 0.26 0.35 V
IB = 1mA, IC = 24mA – 0.30 0.40 V
NTE101 IB = 0.5mA, IC = 10mA 0.15 0.22 0.40 V
Collector–Emitter Saturation Voltage
NTE100
V
CE(sat)
IB = 0.4mA, IC = 12mA
– 0.08 0.15 V
IB = 1mA, IC = 24mA – 0.08 0.20 V
NTE101 IB = 0.5mA, IC = 10mA – 0.07 0.20 V
Small–Signal Forward Current Transfer Ratio
NTE100
h
fe
VCE = 6V IC = 1mA, f = 1kHz
– 135 –
NTE101 VCE = 5V – 105 –
Output Capacitance
NTE100
C
ob
VCB = 6V IE = 0, f = 1MHz
– 9 20 pF
NTE101 VCB = 5V – 14 20 pF
Switching Characteristics
Delay Time
NTE100
t
d
IC = 10mA, I
B(1)
= 1.3mA,
– 0.14 – µs
NTE101
I
B(2)
= 0.7mA, V
BE(off)
= 0.8V,
R
L
= 1kΩ
– 0.07 – µs
Rise Time t
r
RL = 1k
Ω
– 0.20 – µs
Storage Time
NTE100
t
s
– 0.38 –
µs
NTE101 – 0.70 – µs
Fall Time
NTE100
t
f
– 0.19 –
µs
NTE101 – 0.40 – µs
Stored Base Charge Q
sb
I
B(1)
= 1mA, IC = 10mA – 800 1400 pcb
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