NTE NTE10 Datasheet

NTE10

Silicon NPN Transistor

UHF Low Noise Wide–Band Amplifier

Features:

D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz)
D High Power Gain: MAG = 14dB Typ (f = 0.9GHz)
D High Cutoff Frequency: fT = 5GHz Typ

Absolute Maximum Ratings:

Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I

B

EBO

C

Collector Power Dissipation, P
Junction Temperature, T

j

Storage Temperature Range, T

Electrical Characteristics:

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Gain–Bandwidth Product f

(TA = +25°C unless otherwise specified)

CBO

CER

C

stg

(TA = +25°C unless otherwise specified)

CBO
EBO

FE

T

20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

70mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

VCB = 12V, IE = 0 – – 1.0
VEB = 2V, IC = 0 – – 10
VCE = 10V, IC = 20mA 40 – 200

VCE = 10V, IC = 20mA – 5.0 – GHz

µA
µA

3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Output Capacitance C
Reverse Transfer Capacitance C
Forward Transfer Gain |S
Maximum Available Power Gain MAG VCE = 10V, IC = 5mA, f = 0.9GHz – 14 – dB
Noise Figure NF VCE = 10V, IC = 5mA, f = 0.9GHz – 2.2 4.5 dB

ob

21e

VCB = 10V, f = 1MHz – 0.8 1.1 pF
VCB = 10V, f = 1MHz – 0.5 – pF

re

|2VCE = 10V, IC = 20mA, f = 0.9GHz 8 10 – dB

.210

(5.33)

Max

.135 (3.45) Min

Seating Plane

.500

(12.7)

Min

.100 (2.54)

.021 (.445) Dia Max

B E C

.050 (1.27)

.165

(4.2)

Max

.105 (2.67) Max

.205 (5.2) Max

.105 (2.67) Max