NTE NTE10 Datasheet
NTE10
Silicon NPN Transistor
UHF Low Noise Wide–Band Amplifier
Features:
D Low Noise Figure: NF = 2.2dB Typ (f = 0.9GHz)
D High Power Gain: MAG = 14dB Typ (f = 0.9GHz)
D High Cutoff Frequency: fT = 5GHz Typ
Absolute Maximum Ratings:
Collector–Base Voltage, V
Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I
Base Current, I
B
EBO
C
Collector Power Dissipation, P
Junction Temperature, T
j
Storage Temperature Range, T
Electrical Characteristics:
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain–Bandwidth Product f
(TA = +25°C unless otherwise specified)
CBO
CER
C
stg
(TA = +25°C unless otherwise specified)
CBO
EBO
FE
T
20V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
12V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
70mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
30mA. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
500mW. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
VCB = 12V, IE = 0 – – 1.0
VEB = 2V, IC = 0 – – 10
VCE = 10V, IC = 20mA 40 – 200
VCE = 10V, IC = 20mA – 5.0 – GHz
µA
µA
3V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Output Capacitance C
Reverse Transfer Capacitance C
Forward Transfer Gain |S
Maximum Available Power Gain MAG VCE = 10V, IC = 5mA, f = 0.9GHz – 14 – dB
Noise Figure NF VCE = 10V, IC = 5mA, f = 0.9GHz – 2.2 4.5 dB
ob
21e
VCB = 10V, f = 1MHz – 0.8 1.1 pF
VCB = 10V, f = 1MHz – 0.5 – pF
re
|2VCE = 10V, IC = 20mA, f = 0.9GHz 8 10 – dB
.210
(5.33)
Max
.135 (3.45) Min
Seating Plane
.500
(12.7)
Min
.100 (2.54)
.021 (.445) Dia Max
B E C
.050 (1.27)
.165
(4.2)
Max
.105 (2.67) Max
.205 (5.2) Max
.105 (2.67) Max
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