nte 2594 Service Manual

NTE2594

Silicon NPN Transistor

High Voltage, High Current Switch

Features:

D High Breakdown Voltage, High Reliability
D Fast Switching Speed
D Wide ASO

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector–Base Voltage, V

Collector–Emitter Voltage, V
Emitter–Base Voltage, V
Collector Current, I

C

Continuous 15A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Pulsed (PW ≤ 300µs, Duty Cycle ≤ 10%) 25A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Base Current, I

B

Collector Dissipation, P

TA = +25°C 3W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

TC = +25°C 55W. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Operating Junction Temperature, T
Storage Temperature Range, T

CBO

CEO

EBO

C

J

stg

800V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

500V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

7V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

4A. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

+150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

–55° to +150°C. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

Electrical Characteristics: (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h

Gain Bandwidth Product f
Output Capacitance C
Collector–Emitter Saturation Voltage V
Base–Emitter Saturation Voltage V
Collector–Base Breakdown Voltage V
Collector–Emitter Breakdown Voltage V
Emitter–Base Breakdown Voltage V

CE(sat)IC

BE(sat)IC
(BR)CBOIC
(BR)CEOIC
(BR)EBOIE

CBO
EBO

FE

VCB = 500V, IE = 0 – – 10 µA
VEB = 5V, IC = 0 – – 10 µA
VCE = 5V, IC = 1.2A 15 – 50
VCE = 5V, IC = 6A 8 – –
VCE = 10V, IC = 1.2A – 18 – MHz

T

VCB = 10V, f = 1MHz – 160 – pF

ob

= 6A, IB = 1.2A – – 1.0 V
= 6A, IB = 1.2A – – 1.5 V
= 1mA, IE = 0 800 – – V
= 5mA, RBE = ∞ 500 – – V
= 1mA, IC = 0 7 – – V

Electrical Characteristics (Cont’d): (TA = +25°C unless otherwise specified)

Parameter Symbol Test Conditions Min Typ Max Unit

Collector–Emitter Sustaining Voltage V

Turn–On Time t
Storage Time t
Fall Time t

CEX(sus)IC

.123 (3.1)

.315
(8.0)

on

stg

= 5A, IB1 = IB2 = 2A, L = 500µH,

Clamped
5IB1 = –2.5IB2 = IC = 7A,

VCC = 200V, RL = 28.6Ω

f

500 – – V

– – 0.5 µs
– – 3.0 µs
– – 0.3 µs

.134 (3.4) Dia.221 (5.6)

.630 (16.0)

C

.804

(20.4)

.866

(22.0)

.158 (4.0)

.215 (5.45)

BCE

.040 (1.0)