NSC LP395Z Datasheet

LP395 Ultra Reliable Power Transistor
General Description
The LP395 is a fast monolithic transistor with complete over­load protection. This very high gain transistor has included on the chip, current limiting, power limiting, and thermal overload protection, making it difficult to destroy from almost any type of overload. Available in an epoxy TO-92 transistor package this device is guaranteed to deliver 100 mA.
Thermal limiting at the chip level, a feature not available in discrete designs, providescomprehensiveprotection against overload. Excessive power dissipation or inadequate heat sinking causes the thermal limiting circuitry to turn off the de­vice preventing excessive die temperature.
The LP395 offers a significant increase in reliability while simplifying protection circuitry. It is especially attractive as a small incandescent lamp or solenoid driver because of its low drive requirements and blowout-proof design.
The LP395 is easy to use and only a few precautions need be observed. Excessive collector to emitter voltage can de­stroy the LP395 as with any transistor. When the device is used as an emitter follower with a low source impedance, it is necessary to insert a 4.7 kresistor in series with the base lead to prevent possible emitter follower oscillations. Also since it has good high frequency response, supply by-passing is recommended.
Areas where the LP395 differs from a standard NPN transis­tor are in saturation voltage, leakage (quiescent) current and
1.6 Volts, while in the off condition the quiescent (leakage) current is typically 200 µA. Base current in this device flows out of the base lead, rather than into the base as is the case with conventional NPN transistors. Also the base can be driven positive up to 36 Volts without damage, but will draw current if driven negative more than 0.6 Volts.Additionally, if the base lead is left open, the LP395 will turn on.
The LP395 is a low-power version of the 1-Amp LM195/ LM295/LM395 Ultra Reliable Power Transistor.
Features
n Internal thermal limiting n Internal current and power limiting n Guaranteed 100 mA output current n 0.5 µA typical base current n Directly interfaces with TTL or CMOS n +36 Volts on base causes no damage n 2 µs switching time
LP395 Ultra Reliable Power Transistor
April 1998
Connection Diagram Typical Applications
TO-92 Package
DS005525-1
Order Number LP395Z See NS Package Z03A
© 1999 National Semiconductor Corporation DS005525 www.national.com
Fully Protected Lamp Driver
DS005525-3
Absolute Maximum Ratings (Note 1)
Collector to Emitter Voltage 36V Collector to Base Voltage 36V Base to Emitter Voltage (Forward) 36V Base to Emitter Voltage (Reverse) 10V
Collector Current Limit Internally Limited Power Dissipation Internally Limited Operating Temperature Range −40˚C to +125˚C Storage Temperature Range −65˚C to +150˚C Lead Temp. (Soldering, 10 seconds) 260˚C
Base to Emitter Current (Reverse) 20 mA
Electrical Characteristics
Tested Design Units
Symbol Parameter Conditions Typical Limit Limit (Limit)
(Note 3) (Note 4)
V
CE
I
CL
I
B
I
Q
V
CE(SAT)
BV
BE
V
BE
t
S
θ
JA
Note 1: AbsoluteMaximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func­tional, but do not guarantee specific performance limits.
Note 2: Parameters identified with boldface type apply at temp. extremes. All other numbers, unless noted apply at +25˚C. Note 3: Guaranteed and 100%production tested. Note 4: Guaranteed (but not 100%production tested) over the operating temperature and supply voltage ranges. These limits are not used to calculate outgoing
quality levels.
Note 5: These numbers apply for pulse testing with a low duty cycle. Note 6: Base positive with respect to emitter.
Collector to Emitter 0.5 mA IC≤ 100 mA 36 36 V(Max) Operating Voltage (Note 2) Collector Current Limit V (Note 5) V
=
BE
=
BE
=
V
BE
2V, V
CE
2V, V
CE
2V, 2V V
=
36V 45 25 20 mA(Min)
=
15V 90 60 50 mA(Min)
6V 130 100 100 mA(Min)
CE
Base Current 0 IC≤ 100 mA −0.3 −2.0 −2.5 µA(Max) Quiescent Current V Saturation Voltage V Base to Emitter Break- 0 VCE≤ 36V, I
BE BE
=
0V, 0 V
=
2V, I
36V 0.24 0.50 0.60 mA(Max)
CE
=
100 mA 1.82 2.00 2.10 V(Max)
C
=
2µA 36 36 V(Min)
B
down Voltage (Note 5) Base to Emitter Voltage I (Note 6) I Switching Time V
=
5 mA 0.69 0.79 0.90 V(Max)
C
=
100 mA (Note 5) 1.02 1.40 V (Max)
C
=
CE
=
V
BE
=
20V, R
L
0V, +2V, 0V
200 s
Thermal Resistance 0.4" leads soldered to 150 180 ˚C/W Junction to Ambient printed circuit board (Max)
0.125" leads soldered to 130 160 ˚C/W printed circuit board (Max)
Simplified Circuit Applications Information
DS005525-5
www.national.com 2
Loading...
+ 3 hidden pages