NSC LMX2350TMX Datasheet

LMX2350/LMX2352 PLLatinum Fractional N RF / Integer N IF Dual Low Power Frequency Synthesizer
LMX2350 2.5 GHz/550 MHz LMX2352 1.2 GHz/550 MHz
General Description
The LMX2350/2352 is part of a family of monolithic inte­grated fractional N/ Integer N frequency synthesizers de­signed to be used in a local oscillator subsystem for a radio transceiver. It is fabricated using National’s 0.5µ ABiC V silicon BiCMOS process. The LMX2350/2352 contains dual modulus prescalers along with modulo 15 or 16 fractional compensation circuitry in the RF divider. A 16/17 or 32/33 prescale ratio can be selected for the LMX2350, and the LMX2352 provides 8/9 or 16/17 prescale ratios. The IF circuitry for both the LMX2350 and LMX2352 contains an 8/9 prescaler, and is fully programmable. Using a fractional N phase locked loop technique, the LMX2350 /52 can gener­ate very stable low noise control signals for UHF and VHF voltage controlled oscillators (VCOs).
For the RF PLL, a highly flexible 16 level programmable charge pump supplies output current magnitudes from 100µA to 1.6mA. Two uncommitted CMOS outputs can be used to provide external control signals, or configured to FastLock
mode. Serial data is transferred into the LMX2350/2352 via a three wire interface (Data, LE, Clock). Supply voltage can range from 2.7 V to 5.5 V.TheLMX2350/
LMX2352 family features very low current consumption; typi­cally LMX2350 (2.5 GHz) 6.5 mA, LMX2352 (1.2 GHz) 4.75 mA at 3.0V. The LMX2350/2352 are available in a 24-pin TSSOP and 24-pin CSP surface mount plastic package.
Features
n 2.7 V to 5.5 V operation n Low current consumption
LMX2350: Icc = 6.75mA typ at 3v LMX2352: Icc = 5.00mA typ at 3v
n Programmable or logical power down mode
Icc=5µAtypat3v
n Modulo 15 or 16 fractional RF N divider supports ratios
of 1, 2, 3, 4, 5, 8, 15, or 16
n Programmable charge pump current levels
RF 100µA to 1.6mA in 100µA steps IF 100µA or 800 µA
n Digital filtered lock detect
Applications
n Portable wireless communications (PCS/PCN, cordless) n Dual mode cellular telephone systems n Zero blind slot TDMA systems n Spread spectrum communication systems (CDMA) n Cable TV Tuners (CATV)
Block Diagram
DS100831-1
March 2001
LMX2350/LMX2352 PLLatinum Fractional N RF / Integer N IF Dual Low Power Frequency
Synthesizer
© 2001 National Semiconductor Corporation DS100831 www.national.com
Connection Diagrams
Pin Descriptions
Pin No.
for CSP
Package
Pin No.
for
TSSOP
package
Pin Name I/O Description
24 1 OUT0 O Programmable CMOS output. Level of the output is controlled by IF_N [17] bit.
1 2 Vcc
RF
- RF PLL power supply voltage input. Must be equal to VccIF. May range from 2.7 V to
5.5 V. Bypass capacitors should be placed as close as possible to this pin and be connected directly to the ground plane.
23V
p
RF
- Power supply for RF charge pump. Must be V
cc
RF
and V
cc
IF
.
34CP
o
RF
O RF charge pump output. Connected to a loop filter for driving the control input of an
external VCO. 4 5 GND - Ground for RF PLL digital circuitry. 5 6 fin RF I RF prescaler input. Small signal input from the VCO. 6 7 fin RF
I RF prescaler complimentary input. A bypass capacitor should be placed as close as
possible to this pin and be connected directly to the ground plane. 7 8 GND - Ground for RF PLL analog circuitry. 8 9 OSCx I/O Dual mode oscillator output or RF R counter input. Has a Vcc/2 input threshold when
configured as an input and can be driven from an external CMOS or TTL logic gate.
Can also be configured as an output to work in conjunction with OSCin to form a
crystal oscillator. (See functional description 1.1 and programming description 3.1.)
DS100831-2
Order Number LMX2350TM or LMX2352TM
NS Package Number MTC24
DS100831-22
LMX2350/LMX2352
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Pin Descriptions (Continued)
Pin No.
for CSP
Package
Pin No.
for
TSSOP
package
Pin Name I/O Description
9 10 OSCin I Oscillator input which can be configured to drive both the IF and RF R counter inputs
or only the IF R counter depending on the state of the OSC programming bit. (See functional description 1.1 and programming description 3.1.)
10 11 FoLD O Multiplexed output of N or R divider and RF/IF lock detect. Active High/Low CMOS
output except in analog lock detect mode. (See programming description 3.1.5.)
11 12 RF_EN I RF PLL Enable. Powers down RF N and R counters, prescaler, and will TRI-STATE
®
the charge pump output when LOW. Bringing RF_EN high powers up RF PLL depending on the state of RF_CTL_WORD. (See functional description 1.9.)
12 13 IF_EN I IF PLL Enable. Powers down IF N and R counters, prescaler, and will TRI-STATE the
charge pump output when LOW. Bringing IF_EN high powers up IF PLL depending on the state of IF_CTL_WORD. (See functional description 1.9.)
13 14 CLOCK I High impedance CMOS Clock input. Data for the various counters is clocked into the
24 - bit shift register on the rising edge.
14 15 DATA I Binary serial data input. Data entered MSB first. The last two bits are the control bits.
High impedance CMOS input.
15 16 LE I Load enable high impedance CMOS input. Data stored in the shift registers is loaded
into one of the 4 internal latches when LE goes HIGH. (See functional description 1.7.) 16 17 GND - Ground for IF analog circuitry. 17 18 fin IF
I IF prescaler complimentary input. A bypass capacitor should be placed as close as
possible to this pin and be connected directly to the ground plane. 18 19 fin IF I IF prescaler input. Small signal input from the VCO. 19 20 GND - Ground for IF digital circuitry. 20 21 CPo
IF
O IF charge pump output. For connection to a loop filter for driving the input of an
external VCO. 21 22 Vp
IF
- Power supply for IF charge pump. Must be V
cc
RF
and V
cc
IF
.
22 23 Vcc
IF
- IF power supply voltage input. Must be equal to VccRF. Input may range from 2.7 V to
5.5 V. Bypass capacitors should be placed as close as possible to this pin and be
connected directly to the ground plane. 23 24 OUT1 O Programmable CMOS output. Level of the output is controlled by IF_N [18] bit.
LMX2350/LMX2352
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Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Value
Parameter Symbol Min Typ Max Units
Power Supply Voltage Vcc
RF
-0.3 6.5 V
Vcc
IF
-0.3 6.5 V
Vp
RF
-0.3 6.5 V
Vp
IF
-0.3 6.5 V Voltage on any pin with GND = 0 volts Vi -0.3 Vcc + 0.3 V Storage Temperature Range Ts -65 +150 C˚ Lead Temperature (Solder 4 sec.) T
L
+260
Recommended Operating Conditions
Value
Parameter Symbol Min Typ Max Units
Power Supply Voltage Vcc
RF
2.7 5.5 V
Vcc
IF
Vcc
RF
Vcc
RF
V
Vp
RF
Vcc 5.5 V
Vp
IF
Vcc 5.5 V
Operating Temperature TA -40 + 85 C
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. OperatingRatingsindicate conditions for which the device is intended to be functional, but do not guarantee specific perfor­mance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.
Note 2: This Device is a high performance RF integrated circuit with an ESD rating
<
2 KV and is ESD sensitive. Handling and assembly of this device
should only be done at ESD-free workstations.
Electrical Characteristics (V
cc
RF
=V
cc
IF
=V
P
RF
=V
P
IF
= 3.0V; −40˚ C<T
A
<
85˚ C except as specified)
Sym­bol
Parameter Conditions Min Typ Max Units
General
I
cc
Power Supply Current LMX2350 RF and IF,
V
cc
= 2.7V to 5.5V
6.5 8.75 mA
LMX2352 RF and IF,
V
cc
= 2.7V to 5.5V
4.75 6.0 mA
LMX2350/52 IF only, V
cc
= 2.7V to 5.5V 1 2.2 mA
I
CC-PWDN
Power Down Current RF_EN = IF_EN = LOW 5 20 µA
f
in
RF RF Operating LMX2350 Prescaler = 32 (Note 3) 1.2 2.5 GHz
Frequency Prescaler = 16 (Note 3) 0.5 1.2 GHz
LMX2352 Prescaler = 16 (Note 3) 0.5 1.2 GHz
Prescaler = 8 (Note 3) 0.25 0.5 GHz
f
in
IF IF Operating Frequency 10 550 MHz
f
OSC
Oscillator Frequency No load on OSCx (Note 3) 2 50 MHz
With resonator load on OSCx (Note 3)
2 20 MHz
fφ Phase Detector Frequency RF and IF 10 MHz Pf
in RF
RF Input Sensitivity 2.7VVCC≤3.0V −15 0 dBm
3.0VV
CC
5.5V −10 0 dBm
Pf
in IF
IF Input Sensitivity 2.7 VVCC≤ 5.5V −10 0 dBm
V
OSC
Oscillator Sensitivity OSCin, OSCx 0.5 V
CC
V
PP
LMX2350/LMX2352
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Electrical Characteristics (V
cc
RF
=V
cc
IF
=V
P
RF
=V
P
IF
= 3.0V; −40˚ C<T
A
<
85˚ C except as
specified) (Continued)
All Min/Max specifications are guaranteeed by design, or test, or statistical methods.
Symbol Parameter Conditions Min Typ Max Units Charge Pump
ICPo-
source
RF
RF Charge Pump Output Current (see Programming Description 3.2.2)
VCPo Vp/2, RF_CP_WORD = 0000 −100 µA
ICPo-
sink RF
VCPo = Vp/2, RF_CP_WORD = 0000 100 µA
ICPo-
source
RF
VCPo = Vp/2, RF_CP_WORD = 1111 −1.6 mA
ICPo-
sink RF
VCPo = Vp/2, RF_CP_WORD = 1111 1.6 mA
ICPo-
source
IF
IF Charge Pump Output Current (see Programming Description 3.1.4)
VCPo = Vp/2, CP_GAIN_8 = 0 −100 µA
ICPo-
sink IF
VCPo = Vp/2, CP_GAIN_8 = 0 100 µA
ICPo-
source
IF
VCPo = Vp/2, CP_GAIN_8 = 1 −800 µA
ICPo-
sink IF
VCPo = Vp/2, CP_GAIN_8 = 1 800 µA
ICPo-
Tri
Charge Pump TRI-STATE Current
0.5 VCPo Vp - 0.5
-40˚ C
<TA<
85˚ C
-2.5 2.5 nA
ICPo-
sink
vs. ICPo-
source
CP Sink vs. Source Mismatch
VCPo = Vp/2 TA = 25˚ C
RFICPo = 400 µA - 1.6 mA
310 %
ICPo vs. VCPo
CP Current vs. Voltage 0.5 VCPo Vp -
0.5 T
A
= 25˚ C
RFICPo = 800 µA - 1.6 mA
415 %
ICPo vs. T CP Current vs
Temperature
VCPo = Vp/2
-40˚ C
<TA<
85˚ C
8%
Digital Interface
V
IH
High-level Input Voltage (Note 4) 0.8 Vcc V
V
IL
Low-level Input Voltage (Note 4) 0.2 Vcc V
I
IH
High-level Input Current VIH=VCC= 5.5 V, (Note 4) −1.0 1.0 µA
I
IL
Low-level Input Current VIL=0,VCC= 5.5 V, (Note 4) −1.0 1.0 µA
I
IH
Oscillator Input Current VIH=VCC= 5.5 V 100 µA
I
IL
Oscillator Input Current VIL=0,VCC= 5.5 V −100 µA
V
OH
High-level Output Voltage
IOH= −500 µA VCC−0.4 V
V
OL
High-level Output Voltage
IOL= 500 µA 0.4 V
MICROWIRE Timing
t
CS
Data to Clock Setup Time
See Data Input Timing 50 ns
t
CH
Data to Clock Hold Time
See Data Input Timing 10 ns
t
CWH
Clock Pulse Width High See Data Input Timing 50 ns
t
CWL
Clock Pulse Width Low See Data Input Timing 50 ns
t
ES
Clock to Load Enable Set Up Time
See Data Input Timing 50 ns
t
EW
Load Enable Pulse Width
See Data Input Timing 50 ns
Note 3: Minimum operating frequencies are not production tested - only characterized. Note 4: except fin, OSCin and OSCx
LMX2350/LMX2352
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Charge Pump Current Specification Definitions
DS100831-7
I1 = CP sink current at VDo=Vp−∆V I2 = CP sink current at V
Do
= Vp/2
I3 = CP sink current at V
Do
= V
I4 = CP source current at V
Do
=Vp−∆V
I5 = CP source current at V
Do
= Vp/2
I6 = CP source current at V
Do
= V
V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
CC
and ground. Typical values are between 0.5V and 1.0V.
Note 5: I
Do
vs VDo= Charge Pump Output Current magnitude variation vs Voltage = [1⁄
2
*
{||1| − ||3|}]/[1⁄
2
*
{||1| + ||3|}]*100% and [1⁄
2
*
{||4| − ||6|}]/[1⁄
2
*
{||4| +
||6|}]
*
100%
Note 6: I
Do-sink
vs I
Do-source
= Charge Pump Output Current Sink vs Source Mismatch = [||2| − ||5|]/[1⁄
2
*
{||2| + ||5|}]*100%
Note 7: I
Do
vs TA= Charge Pump Output Current magnitude variation vs Temperature = [||2@temp| − ||2@25˚C|]/||2@25˚C|*100% and [||5@temp| − ||5
@
25˚C|]/||5@25˚C|*100%
LMX2350/LMX2352
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RF Sensitivity Test Block Diagram
Typical Performance Characteristics
DS100831-8
Note: N = 10,000 R = 50 P = 32 Note: Sensitivity limit is reached when the error of the divided RF output, F
o
LD, is 1 Hz.
ICCvs V
CC
LMX2350
DS100831-9
ICCvs V
CC
LMX2352
DS100831-10
I
CPO
TRI-STATE vs
CP
O
Voltage
DS100831-11
Charge Pump Current vs CPOVoltage RF_CP_WORD = 0000 and 0111 IF CP_GAIN_8 = 0 and 1
DS100831-12
LMX2350/LMX2352
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