LMX2330L/LMX2331L/LMX2332L PLLatinum Low Power Dual Frequency Synthesizer for RF
Personal Communications
PLLatinum
™
Low Power Dual Frequency Synthesizer for
RF Personal Communications
LMX2330L2.5 GHz/510 MHz
LMX2331L2.0 GHz/510 MHz
LMX2332L1.2 GHz/510 MHz
General Description
The LMX233XL family of monolithic, integrated dual frequency synthesizers, including prescalers, is to be used as a
local oscillator for RF and first IF of a dual conversion
transceiver. It is fabricated using National’s 0.5µ ABiC V
silicon BiCMOS process.
The LMX233XL contains dual modulus prescalers. A 64/65
or a 128/129 prescaler (32/33 or 64/65 in the 2.5 GHz
LMX2330L) can be selected fortheRFsynthesizeranda8/9
or a 16/17 prescaler can be selected for the IF synthesizer.
LMX233XL, which employs a digitalphase locked looptechnique, combined with a high quality reference oscillator,
provides the tuning voltages for voltage controlled oscillators
to generate very stable, low noise signals for RFand IF local
oscillators. Serial data is transferred into the LMX233XL via
a three wire interface (Data, Enable, Clock). Supply voltage
can range from 2.7V to5.5V.The LMX233XL family features
very low current consumption;
LMX2330L—5.0 mA at 3V, LMX2331L —4.0 mA at 3V,
LMX2332L—3.0 mA at 3V.
The LMX233XL are available in a TSSOP 20-pin, CSP
24-pin surface mount plastic package, and thin CSP 20-pin
surface mount plastic package.
Features
n Ultra low current consumption
n 2.7V to 5.5V operation
n Selectable synchronous or asynchronous powerdown
mode:
I
= 1 µA typical at 3V
CC
n Dual modulus prescaler:
LMX2330L(RF) 32/33 or 64/65
LMX2331L/32L(RF) 64/65 or 128/129
LMX2330L/31L/32L (IF) 8/9 or 16/17
n Selectable charge pump TRI-STATE
n Selectable charge pump current levels
n Selectable Fastlock
n Upgrade and compatible to LMX233XA family
™
mode
®
mode
Applications
n Portable Wireless Communications
(PCS/PCN, cordless)
n Cordless and cellular telephone systems
n Wireless Local Area Networks (WLANs)
n Cable TV tuners (CATV)
n Other wireless communication systems
1—Power supply voltage input for RF analog and RF digital circuits.
Input may range from 2.7V to 5.5V. V
1 must equal VCC2.
CC
Bypass capacitors should be placed as close as possible to this
pin and be connected directly to the ground plane.
122V
233D
1—Power Supply for RF charge pump. Must be ≥ VCC.
P
RFOInternal charge pump output. For connection to a loop filter for
o
driving the input of an external VCO.
344GND—Ground for RF digital circuitry.
455f
566f
RFIRF prescaler input. Small signal input from the VCO.
IN
RFIRF prescaler complementary input. A bypass capacitor should
IN
be placed as close as possible to this pin and be connected
directly to the ground plane. Capacitor is optional with some loss
of sensitivity.
677GND—Ground for RF analog circuitry.
788OSC
IOscillator input. The input has a VCC/2 input threshold and can
in
be driven from an external CMOS or TTL logic gate.
8109GND—Ground for IF digital, MICROWIRE
™
,FoLD, and oscillator
circuits.
91110F
LDOMultiplexed output of the RF/IF programmable or reference
o
dividers, RF/IF lock detect signals and Fastlock mode. CMOS
(see Programmable Modes).
output
101211ClockIHigh impedance CMOS Clock input. Data for the various
counters is clocked in on the rising edge, into the 22-bit shift
register.
111412DataIBinary serial data input. Data entered MSB first. The last two bits
are the control bits. High impedance CMOS input.
121513LEILoad enable high impedance CMOS input. When LE goes HIGH,
data stored in the shift registers is loaded into one of the 4
appropriate latches (control bit dependent).
131614GND—Ground for IF analog circuitry.
141715f
IFIIF prescaler complementary input. A bypass capacitor should be
IN
placed as close as possible to this pin and be connected directly
to the ground plane. Capacitor is optional with some loss of
sensitivity.
151816f
161917GND—Ground for IF digital, MICROWIRE, F
172018D
RFIIF prescaler input. Small signal input from the VCO.
IN
LD, and oscillator circuits.
o
IFOIF charge pump output. For connection to a loop filter for driving
o
the input of an external VCO.
182219V
192320V
2—Power Supply for IF charge pump. Must be ≥ VCC.
P
2—Power supply voltage input for IF analog, IF digital,
CC
MICROWIRE, F
2.7V to 5.5V. V
LD, and oscillator circuits. Input may range from
o
2 must equal VCC1. Bypass capacitors should
CC
be placed as close as possible to this pin and be connected
directly to the ground plane.
X1, 9, 13, 21XNC—No connect.
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Block Diagram
LMX2330L/LMX2331L/LMX2332L
Note: The RF prescaler for the LMX2331L/32L is either 64/65 or 128/129, while the prescaler for the LMX2330L is 32/33 or 64/65.
Note: V
R-counter along with the OSC
Note: V
1 supplies power to the RF prescaler, N-counter, R-counter and phase detector. VCC2 supplies power to the IF prescaler, N-counter, phase detector,
CC
1 and VP2 can be run separately as long as VP≥ VCC.
P
buffer, MICROWIRE, and FoLD. VCC1 and VCC2 are clamped to each other by diodes and must be run at the same voltage level.
in
01280603
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LMX2330L/LMX2331L/LMX2332L
Absolute Maximum Ratings (Notes 1,
2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
V
CC
V
P
Voltage on Any Pin
with GND = 0V (V
Storage Temperature Range (T
)−0.3V to VCC+0.3V
I
)−65˚C to +150˚C
S
Lead Temperature (solder 4 sec.)
(T
)+260˚C
L
−0.3V to +6.5V
−0.3V to +6.5V
Recommended Operating
Conditions
Power Supply Voltage
V
CC
V
P
Operating Temperature (T
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to
the device may occur. Recommended Operating Conditions indicate conditions for which the device is intended to be functional, but do not guarantee
specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply
only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD
<
2 keV and is ESD sensitive. Handling and assembly of this device
rating
should only be done at ESD protected work stations.
Data to Clock Set Up TimeSee Data Input Timing50ns
Data to Clock Hold TimeSee Data Input Timing10ns
<
85˚C, except as specified
A
Value
MinTypMax
LMX2331L RF Only3.04.0mA
LMX2332L IF + RF3.04.1
LMX2332L RF Only2.02.7
LMX233xL IF Only1.01.4
LMX2332L0.11.2
V
= 5.0V−100dBm
CC
in
0.5V
CC
−1.01.0µA
4)
−1.01.0µA
(Note 4)
I
= −500 µAVCC− 0.4V
OH
I
= 500 µA0.4V
OL
CC
Units
PP
V
V
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Electrical Characteristics (Continued)
VCC= 3.0V, VP= 3.0V; −40˚C<T
SymbolParameterConditions
t
CWH
t
CWL
t
ES
t
EW
Note 3: Clock, Data and LE = GND or Vcc.
Note 4: Clock, Data and LE does not include f
Clock Pulse Width HighSee Data Input Timing50ns
Clock Pulse Width LowSee Data Input Timing50ns
Clock to Load Enable Set Up TimeSee Data Input Timing50ns
Load Enable Pulse WidthSee Data Input Timing50ns
LMX2330L/LMX2331L/LMX2332L
<
85˚C, except as specified
A
RF, fINIF and OSCIN.
IN
Value
MinTypMax
Charge Pump Characteristics
VCC= 3.0V, VP= 3.0V; −40˚C<TA≤ 85˚C, except as specified
SymbolParameterConditions
I
-SOURCECharge Pump OutputVDo=VP/2, I
Do
I
-SINKCurrentVDo=VP/2, I
Do
I
-SOURCEVDo=VP/2, I
Do
I
-SINKVDo=VP/2, I
Do
I
-TRICharge Pump0.5V ≤ VDo≤ VP− 0.5V−2.52.5
Do
<
= 25˚C
A
T
TRI-STATE Current−40˚C
I
-SINK vsCP Sink vsVDo=VP/2310%
Do
I
SOURCESource Mismatch (Note 7)TA= 25˚C
Do-
I
vs V
Do
Do
CP Current vs Voltage0.5 ≤ VDo≤ VP− 0.5V1015%
(Note 6)T
I
vs T
Do
A
CP Current vsVDo=VP/210%
Temperature (Note 8)−40˚C ≤ T
Note 5: See PROGRAMMABLE MODES for I
description.
CPo
= HIGH (Note 5)−4.0mA
CPo
= HIGH (Note 5)4.0mA
CPo
= LOW (Note 5)−1mA
CPo
= LOW (Note 5)1mA
CPo
<
85˚C
A
≤ 85˚C
A
MinTypMax
Value
Units
Units
nA
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Charge Pump Current Specification Definitions
LMX2330L/LMX2331L/LMX2332L
I1 = CP sink current at VDo=VP−∆V
I2 = CP sink current at V
I3 = CP sink current at V
I4 = CP source current at V
I5 = CP source current at V
I6 = CP source current at V
Do=VP
= ∆V
Do
Do=VP
Do=VP
Do
/2
−∆V
/2
= ∆V
∆V = Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V
Note 6: I
Note 7: I
Note 8: I
vs VDo= Charge Pump Output Current magnitude variation vs Voltage =
Do
1
*
[
⁄
2
{|I1| − |I3|}]/[1⁄
vs I
Do-sink
[|I2| − |I5|]/[
vs TA= Charge Pump Output Current magnitude variation vs Temperature =
Do
@
[|I2
temp| − |I2@25˚C|]/|I2@25˚C|*100% and [|I5@temp| − |I5@25˚C|]/|I5@25˚C|*100%
*
2
{|I1| + |I3|}]*100% and [1⁄
= Charge Pump Output Current Sink vs Source Mismatch =
Do-source
1
*
⁄
2
{|I2| + |I5|}]*100%
*
2
{|I4| − |I6|}]/[1⁄
*
2
{|I4| + |I6|}]*100%
01280637
and ground. Typical values are between 0.5V and 1.0V.
CC
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