The LMX233xA family of monolithic, integrated dual frequency synthesizers, including prescalers, is to be used as a
local oscillator for RF and first IF of a dual conversion transceiver. It is fabricated using National’s ABiC IV silicon
BiCMOS process.
The LMX233xA contains dual modulus prescalers. A 64/65
or a 128/129 prescaler (32/33 or 64/65 in the 2.5 GHz
LMX2330A) can be selected for the RF synthesizer and a
8/9 or a 16/17 prescaler can be selected for the IF synthesizer.LMX233XA,whichemploysadigitalphaselockedloop
technique, combined with a high quality reference oscillator
and loop filters, provides the tuning voltages for voltage controlled oscillators to generate very stable low noise RF and
IF local oscillator signals. Serial data is transferred into the
LMX233xA via a three wire interface (Data, Enable, Clock).
Supply voltage can range from 2.7V to 5.5V.The LMX233xA
familyfeaturesverylowcurrentconsumption;
LMX2330A—13 mA at 3V, LMX2331A—12 mA at 3V,
LMX2332A— 8 mA at 3V.
The LMX233xA are available in a TSSOP 20-pin surface
mount plastic package.
Features
n 2.7V to 5.5V operation
n Low current consumption
n Selectable powerdown mode: I
n Dual modulus prescaler:
n Selectable charge pump TRI-STATE
n Selectable FastLock
n Small outline, plastic, surface mount TSSOP 0.173"
wide package
Applications
n Portable Wireless Communications (PCS/PCN, cordless)
n Cordless and cellular telephone systems
n Wireless Local Area Networks (WLANs)
n Cable TV tuners (CATV)
n Other wireless communication systems
=
1 µA typical at 3V
CC
LMX2330A (RF) 32/33 or 64/65
LMX2331A/32A (RF) 64/65 or 128/129
LMX2330A/31A/32A (IF) 8/9 or 16/17
™
mode
®
mode
May 1999
LMX2330A/LMX2331A/LMX2332A PLLatinum Dual Frequency Synthesizer for RF Personal
Communications
Functional Block Diagram
DS012331-1
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
™
Fastlock
, MICROWIRE™and PLLatinum™are trademarks of National Semiconductor Corporation.
1—Power supply voltage input for RF analog and RF digital circuits. Input may range from 2.7V to
CC
5.5V. V
pin and be connected directly to the ground plane.
1—Power Supply for RF charge pump. Must be ≥ VCC.
P
RFOInternal charge pump output. For connection to a loop filter for driving the input of an external
o
VCO.
1 must equal VCC2. Bypass capacitors should be placed as close as possible to this
CC
4GND—Ground for RF digital circuitry.
5f
6f
RFIRF prescaler input. Small signal input from the VCO.
IN
RFIRF prescaler complementary input. A bypass capacitor should be placed as close as possible to
IN
this pin and be connected directly to the ground plane. Capacitor is optional with some loss of
sensitivity.
7GND—Ground for RF analog circuitry.
8OSC
9GND—Ground for IF digital, MICROWIRE
10F
LDOMultiplexed output of the RF/IF programmable or reference dividers, RF/IF lock detect signals
o
IOscillator input. The input has a VCC/2 input threshold and can be driven from an external CMOS
in
or TTL logic gate.
and Fastlock mode. CMOS output
™
,FoLD, and oscillator circuits.
(see Programmable Modes)
.
11ClockIHigh impedance CMOS Clock input. Data for the various counters is clocked in on the rising
edge, into the 22-bit shift register.
12DataIBinary serial data input. Data entered MSB first. The last two bits are the control bits. High
impedance CMOS input.
13LEILoad enable high impedance CMOS input. When LE goes HIGH, data stored in the shift registers
is loaded into one of the 4 appropriate latches (control bit dependent(.
14GND—Ground for IF analog circuitry.
15f
IFIIF prescaler complementry input. A bypass capacitor should be placed as close as possible to
IN
this pin and be connected directly to the ground plane. Capacitor is optional with some loss of
sensitivity.
16f
17GND—Ground for IF digital, MICROWIRE, F
18D
19V
IFIIF prescaler input. Small signal input from the VCO.
IN
IFOIF charge pump output. For connection to a loop filter for driving the input of an external VCO.
o
2—Power Supply for IF charge pump. Must be ≥ VCC.
P
LD, and oscillator circuits.
o
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(Continued)
Pin Description (Continued)
Pin
No.
20V
Pin
Name
I/ODescription
2—Power supply voltage input for IF analog, IF digital, MICROWIRE, FoLD, and oscillator circuits.
CC
Input may range from 2.7V to 5.5V. V
as close as possible to this pin and be connected directly to the ground plane.
Block Diagram
2 must equal VCC1. Bypass capacitors should be placed
CC
Notes:
The RF prescaler for the LMX2331A/32A is either 64/65 or 128/129, while the prescaler for the LMX2330A is 32/33 or 64/65.
1 supplies power to the RF prescaler, N-counter, R-counter and phase detector. VCC2 supplies power to the IF prescaler, N-counter, phase detector,
V
CC
R-counter along with the OSCinbuffer, MICROWIRE, and FoLD. VCC1 and VCC2 are clamped to each other by diodes and must be run at the same voltage
level.
1 and VP2 can be run separately as long as VP≥ VCC.
V
P
DS012331-27
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Absolute Maximum Ratings (Notes 1, 2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Power Supply Voltage
V
CC
V
P
Voltage on Any Pin
with GND=0V (V
)−0.3V to VCC+0.3V
I
Storage Temperature Range (T
)−65˚C to +150˚C
S
−0.3V to +6.5V
−0.3V to +6.5V
Lead Temperature (solder 4 sec.) (T
)+260˚C
L
Recommended Operating
Conditions
Power Supply Voltage
V
CC
V
P
Operating Temperature (T
)−40˚C to +85˚C
A
2.7V to 5.5V
VCCto +5.5V
Electrical Characteristics
=
V
CC
SymbolParameterConditions
I
CC
I
CC-PWDN
f
RFOperating
IN
f
IFOperating FrequencyLMX233XA45510MHz
IN
f
OSC
fφPhase Detector Frequency10MHz
Pf
RFRF Input SensitivityVCC= 3.0V−15+4dBm
IN
Pf
IFIF Input SensitivityVCC= 2.7V to 5.5V−10+4dBm
IN
V
OSC
V
IH
V
IL
I
IH
I
IL
I
IH
I
IL
V
OH
V
OL
t
CS
t
CH
t
CWH
t
CWL
t
ES
t
EW
*
Clock, Data and LE. Does not include fINRF, fINIF and OSCIN.
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur.Recommended OperatingConditions indicateconditions for which
the device is intended to be functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed.
Note 2: This device is a high performance RF integrated circuit with an ESD rating
be done at ESD protected workstations.
mA
LMX2332A IF + RF810.5
LMX2332A RF Only57
LMX233XA IF Only33.5
Powerdown Current125 µA
LMX2330A0.52.5
Frequency
GHzLMX2331A0.22.0
LMX2332A0.11.2
Oscillator Frequency540MHz
V
= 5.0V−10+4dBm
CC
Oscillator SensitivityOSC
in
High-Level Input Voltage*0.8 V
Low-Level Input Voltage*0.2 V
0.5V
CC
CC
PP
V
V
High-Level Input CurrentVIH=VCC= 5.5V*−1.01.0µA
Low-Level Input CurrentVIL= 0V, VCC= 5.5V*−1.01.0µA
Oscillator Input CurrentVIH=VCC= 5.5V100µA
Oscillator Input CurrentVIL= 0V, VCC= 5.5V−100µA
High-Level Output VoltageIOH= −500 µAVCC− 0.4V
Low-Level Output VoltageIOL= 500 µA0.4V
Data to Clock Set Up TimeSee Data Input Timing50ns
Data to Clock Hold TimeSee Data Input Timing10ns
Clock Pulse Width HighSee Data Input Timing50ns
Clock Pulse Width LowSee Data Input Timing50ns
Clock to Load Enable Set Up TimeSee Data Input Timing50ns
Load Enable Pulse WidthSee Data Input Timing50ns
<
2 keV and is ESD sensitive. Handling and assembly of this device should only
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Charge Pump Characteristics
=
V
CC
SymbolParameterConditions
I
Do-SOURCE
I
Do-SINK
I
Do-SOURCE
I
Do-SINK
I
Do-TRI
I
Do-SINK
I
Do-SOURCE
I
vs V
D
D
o
I
vs T
D
A
o
**
See PROGRAMMABLE MODES for I
Note 3: See charge pump current specification definitions below.
Note 4: See charge pump current specification definitions below.
Note 5: See charge pump current specification definitions below.
3.0V, V
vs
o
=
3.0V; −40˚C
P
<
<
T
85˚C, except as specified
A
Charge Pump Output CurrentV
Charge Pump TRI-STATE
Current
CP Sink vs
Source Mismatch (Note 4)
CP Current vs Voltage
(Note 3)
CP Current vs Temperature
(Note 5)
description.
CPo
=VP/2, I
D
o
V
=VP/2, I
D
o
V
=VP/2, I
D
o
V
=VP/2, I
D
o
0.5V ≤ V
−40˚c
V
=VP/2
D
o
= 25˚C
T
A
0.5V ≤ V
=
25˚C
T
A
V
=VP/2
D
o
−40˚C
D
o
<
T
A
D
o
<
T
Value
MinTypMax
= HIGH**−4.5mA
CP
o
= HIGH**4.5mA
CP
o
= LOW**−1.125mA
CP
o
= LOW**1.125mA
CP
o
≤ VP− 0.5V
<
85˚C
−2.52.5nA
310
≤ VP− 0.5V
<
85˚C
A
1015
10
Units
%
%
%
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Charge Pump Current Specification Definitions
I1=CP sink current at V
I2=CP sink current at V
I3=CP sink current at V
I4=CP source current at V
I5=CP source current at V
I6=CP source current at V
∆V=Voltage offset from positive and negative rails. Dependent on VCO tuning range relative to V