Absolute Maximum Ratings (Notes 2, 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Value
Parameter Symbol Min Typical Max Unit
V
CC
MAIN
−0.3 6.5 V
Power Supply Voltage V
CC
AUX
−0.3 6.5 V
Voltage on any pin with GND=0V V
I
−0.3 VCC+ 0.3 V
Storage Temperature Range T
S
−65 +150 ˚C
Lead Temp. (solder 4 sec) T
L
+260 ˚C
ESD-Human Body Model (Note 2) 2000 eV
Recommended Operating Conditions
Value
Parameter Symbol Min Typical Max Unit
V
CC
MAIN
2.7 3.6 V
Power Supply Voltage V
CC
AUX
V
CC
MAIN
V
CC
MAIN
V
Operating Temperature T
A
−40 +85 ˚C
Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Recommended Operating Conditions indicate conditions for
which the device is intended to be functional, but do not guarantee specific performance limits. Electrical Characteristics document specific minimum and/or
maximum performance values at specified test conditions and are guaranteed. Typical values are for informational purposes only - based on design parameters or
device characterization and are not guaranteed.
Note 2: This device is a high performance RF integrated circuit and is ESD sensitive. Handling and assembly of this device should only be done on ESD-free
workstations.
Electrical Characteristics
(V
CC
MAIN
=V
CC
AUX
= 3.0V; TA= 25˚C except as specified)
Symbol Parameter Conditions Min Typ Max Units
GENERAL
I
CC
Power
Supply
Current
2 GHz + 500 MHz Crystal Mode (Note 3) 5.0 mA
1.1 GHz + 500 MHz Crystal Mode (Note 3) 4.0 mA
1.1 GHz + 1.1 GHz Crystal Mode (Note 3) 5.0 mA
2 GHz Only Crystal Mode (Note 3) 3.5 mA
1.1 GHz Only Crystal Mode (Note 3) 2.5 mA
500 MHz Only Crystal Mode (Note 3) 1.5 mA
I
CC-PWDN
Power Down Current EN
MAIN
= LOW, EN
AUX
= LOW 1 µA
fin fin Operating Frequency fin Main 2 GHz Option 200 2000 MHz
fin Main and Aux 1.1 GHz Option 100 1100 MHz
fin Aux 500 MHz Option 40 500 MHz
OSC
IN
Oscillator Operating Frequency Logic Mode (Note 3) 1 40 MHz
Crystal Mode (Note 3) 1 20 MHz
V
OSC
Oscillator Input Sensitivity 0.5 V
CC
V
PP
fφ Maximum Phase Detector Frequency 10 MHz
Pfin Main and Aux RF Input Sensitivity −15 0 dBm
CHARGE PUMP
ICP
o-source
RF Charge Pump Output Current
(See Programming Description 2.4)
VCPo = VCC/2, High Gain Mode −1600 µA
ICP
o-sink
VCPo = VCC/2, High Gain Mode 1600 µA
ICP
o-source
VCPo = VCC/2, Low Gain Mode −160 µA
ICP
o-sink
VCPo = VCC/2, Low Gain Mode 160 µA
ICP
o-Tri
Charge Pump TRI-STATE®Current 0.5 ≤ VCPo≤ VCC−0.5 1 nA
DIGITAL INTERFACE (DATA, CLK, LE, EN, FoLD)
V
IH
High-Level Input Voltage 0.8V
CC
V
V
IL
Low-Level Input Voltage 0.2V
CC
V
I
IH
High-Level Input Current VIH=VCC= 3.6V, (Note 4) −1.0 1.0 µA
LMX1600/LMX1601/LMX1602
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