NSC LM8364BALMF20, LM8364BALMFX45, LM8364BALMF45, LM8364BALMF30, LM8364BALMFX20 Datasheet
LM8364
Micropower Undervoltage Sensing Circuits
LM8364 Micropower Undervoltage Sensing Circuits
March 2003
General Description
The LM8364 series are micropower undervoltage sensing
circuits that are ideal for use in battery powered microprocessor based systems, where extended battery life is a key
requirement.
A range of threshold voltages from 2.0V to 4.5V are available
with an active low open drain output. These devices feature
a very low quiescent current of 0.65µA typical. The LM8364
series features a highly accurate voltage reference, a comparator with precise thresholds and built-in hysterisis to prevent erratic reset operation, and guaranteed Reset operation
down to 1.0V with extremely low standby current.
These devices are available in the space saving SOT23
5-pin surface mount package. For other undervoltage
thresholds and output options, please contact National
Semiconductor.
Functional Block Diagram
Features
n Extremely Low Quiescent Current: 0.65µA, at VIN=
2.87V
n High Accuracy Threshold Voltage (
n Open Drain Output
n Input Voltage Range: 1V to 6V
n Surface Mount Package (5-Pin SOT23)
n Pin for pin compatible with MC33464
±
2.5%)
Applications
n Low Battery Detection
n Microprocessor reset Controller
n Power Fail Indicator
n Battery Backup Detection
Connection Diagram
5-Pin SOT23
Top View
20065907
© 2003 National Semiconductor Corporation DS200659 www.national.com
20065906
Pin Description
LM8364
Ordering Information
20065908
Package Part Number Package
Marking
5-Pin
SOT23
LM8364BALMF20
LM8364BALMFX20 3k Units Tape and Reel
LM8364BALMF30
LM8364BALMFX30 3k Units Tape and Reel
LM8364BALMF45
LM8364BALMFX45 3k Units Tape and Reel
F01A 2.0V
F05A 3.0V
F04A 4.5V
Threshold Output Type Transport Media NSC Drawing
Open Drain,
Active Low
Open Drain,
Active Low
Open Drain,
Active Low
1k Units Tape and Reel
1k Units Tape and Reel
1k Units Tape and Reel
MF05A
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LM8364
Absolute Maximum Ratings (Note 1)
Junction Temperature 125˚
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage −0.3V to 6.5V
RESET Output Voltage
RESET Output Current
−0.3V to 6.5V
70mA
Storage Temperature Range −65˚C to 150˚C
Mounting Temp.
Operating Ratings (Note 1)
Temperature Range −40˚C to 85˚C
Thermal Resistance to ambient (θ
ESD Tolerance
Human Body Model 2000V
Machine Model 200V
) 265˚C/W
JA
Lead temp (Soldering, 10 sec) 260˚C
Electrical Characteristics
Unless otherwise specified, all limits guaranteed for TA= 25˚C.
Symbol Parameter Conditions Min
(Note 3)
V
DET−
Detector Threshold Voltage High to Low State Output
Decreasing)
(V
IN
20 Suffix 1.950 2.0 2.050
30 Suffix 2.925 3.0 3.075
45 Suffix 4.388 4.5 4.613
V
HYS
Detector Threshold
Hysteresis
VINIncreasing
20 Suffix 0.060 0.100 0.140
30 Suffix 0.090 0.150 0.210
45 Suffix 0.135 0.225 0.315
∆Vdet/∆T Detector Threshold Voltage
Temperature Coefficient
V
OL
RESET Output Voltage Low
(Open Drain Output: I
= 1mA) 0.25 0.5 V
SINK
State
I
OL
V
IN
I
IN
RESET Output Sink Current VIN= 1.5V, VOL= 0.5V 1.0 2.5 mA
Operating Input Voltage
Range
1.0 6.0 V
Quiescent Input Current 20 Suffix
V
= 1.9V 0.55 0.8
IN
V
= 4.0V 0.70 1.3
IN
30 Suffix
V
= 2.87V 0.65 0.9
IN
V
= 5.0V 0.77 1.3
IN
45 Suffix
V
= 4.34V 0.70 1.0
IN
V
= 6.0 0.85 1.4
IN
t
p
Propagation Delay Time
Figure 1
Note 1: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
intended to be functional, but specific performance is not guaranteed. For guaranteed specifications and the test conditions, see the Electrical Characteristics.
Note 2: Typical values represent the most likely parametric norm
Note 3: All limits are guaranteed by testing or statistical analysis.
Typ
(Note 2)
±
100 PPM/˚C
Max
(Note 3)
60 300 µs
Units
V
V
µA
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