NSC LM747MWC, LM747LMW8, LM747J-883, LM747H-883, LM747AH-MIL Datasheet

TL/H/11479

LM747 Dual Operational Amplifier

November 1994

LM747
Dual Operational Amplifier

General Description

The LM747 is a general purpose dual operational amplifier.
The two amplifiers share a common bias network and power
supply leads. Otherwise, their operation is completely inde­pendent.

Additional features of the LM747 are: no latch-up when in­put common mode range is exceeded, freedom from oscilla­tions, and package flexibility.

The LM747C/LM747E is identical to the LM747/LM747A
except that the LM747C/LM747E has its specifications
guaranteed over the temperature range from 0

§

Ctoa70§C

instead of

b

55§Ctoa125§C.

Features

Y

No frequency compensation required

Y

Short-circuit protection

Y

Wide common-mode and differential voltage ranges

Y

Low power consumption

Y

No latch-up

Y

Balanced offset null

Connection Diagrams

Metal Can Package

TL/H/11479– 4

Order Number LM747H

See NS Package Number H10C

Dual-In-Line Package

TL/H/11479– 5

Order Number LM747CN or LM747EN

See NS Package Number N14A

*VaA and VaB are internally connected.

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

Absolute Maximum Ratings

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Supply Voltage

LM747/LM747A

g

22V

LM747C/LM747E

g

18V

Power Dissipation (Note 1) 800 mW

Differential Input Voltage

g

30V

Input Voltage (Note 2)

g

15V

Output Short-Circuit Duration Indefinite

Operating Temperature Range

LM747/LM747A

b

55§Ctoa125§C

LM747C/LM747E 0

§

Ctoa70§C

Storage Temperature Range

b

65§Ctoa150§C

Lead Temperature (Soldering, 10 sec.) 300§C

Electrical Characteristics (Note 3)

Parameter Conditions

LM747A/LM747E LM747 LM747C

Units

Min Typ Max Min Typ Max Min Typ Max

Input Offset Voltage T

A

e

25§C

R

S

s

10 kX 1.0 5.0 2.0 6.0

mV

R

S

s

50X 0.8 3.0

R

S

s

50X 4.0

mV

R

S

s

10 kX 6.0 7.5

Average Input Offset 15

mV/

§

C

Voltage Drift

Input Offset Voltage T

A

e

25§C, V

S

e

g

20V

g

10

g

15

g

15 mV

Adjustment Range

Input Offset Current T

A

e

25§C 3.0 30 20 200 20 200

nA

70 85 500 300

Average Input Offset

0.5 nA/

§

C

Current Drift

Input Bias Current T

A

e

25§C 30 80 80 500 80 500 nA

T

AMIN

s

T

A

s

T

AMAX

0.210 1.5 0.8 mA

Input Resistance T

A

e

25§C, V

S

e

g

20V 1.0 6.0 0.3 2.0 0.3 2.0

MX

V

S

e

g

20V 0.5

Input Voltage Range T

A

e

25§C

g12g

13

V

g12g

13

g12g

13

Large Signal T

A

e

25§C, R

L

t

2kX

Voltage Gain V

S

e

g

20V, V

O

e

g

15V 50 V/mV

V

S

e

g

15V, V

O

e

g

10V 50 200 20 200

V/mV

R

L

t

2kX

V

S

e

g

20V, V

O

e

g

15V 32 V/mV

V

S

e

g

15V, V

O

e

g

10V 25 15 V/mV

V

S

e

g

5V, V

O

e

g

2V 10 V/mV

Output Voltage Swing V

S

e

g

20V

R

L

t

10 kX

g

16

V

R

L

t

2kX

g

15

V

S

e

g

15V

R

L

t

10 kX

g12g

14

g12g

14

V

R

L

t

2kX

g10g

13

g10g

13

Output Short T

A

e

25§C1025352525

mA

Circuit Current 10 40

Common-Mode R

S

s

10 kX,V

CM

e

g

12V 70 90 70 90

dB

Rejection Ratio

R

S

s

50 kX,V

CM

e

g

12V 80 95

2

Electrical Characteristics (Note 3) (Continued)

Parameter Conditions

LM747A/LM747E LM747 LM747C

Units

Min Typ Max Min Typ Max Min Typ Max

Supply Voltage V

S

e

g

20V to V

S

e

g

5V

Rejection Ratio R

S

s

50X 86 96

dB

R

S

s

10 kX 77 96 77 96

Transient Response T

A

e

25§C, Unity Gain
Rise Time 0.25 0.8 0.3 0.3 ms
Overshoot 6.0 20 5 5 %

Bandwidth (Note 4) T

A

e

25§C 0.437 1.5 MHz

Slew Rate T

A

e

25§C, Unity Gain 0.3 0.7 0.5 0.5 V/ms

Supply Current/Amp T

A

e

25§C 2.5 1.7 2.8 1.7 2.8 mA

Power Consumption/Amp T

A

e

25§C

V

S

e

g

20V 80 150

mW

V

S

e

g

15V 50 85 50 85

LM747A V

S

e

g

20V

T

A

e

T

AMIN

165

mW

T

A

e

T

AMAX

135

LM747E V

S

e

g

20V 150

T

A

e

T

AMIN

150 mW

T

A

e

T

AMAX

150

LM747 V

S

e

g

15V

T

A

e

T

AMIN

60 100

mW

T

A

e

T

AMAX

45 75

Note 1: The maximum junction temperature of the LM747C/LM747E is 100§C. For operating at elevated temperatures, devies in the TO-5 package must be
derated based on a thermal resistance of 150

§

C/W, junction to ambient, or 45§C/W, junction to case. The thermal resistance of the dual-in-line package is 100§C/

W, junction to ambient.

Note 2: For supply voltages less than

g

15V, the absolute maximum input voltage is equal to the supply voltage.

Note 3: These specifications apply for

g

5VsV

S

s

g

20V andb55§CsT

A

s

125§C for the LM747A and 0§CsT

A

s

70§C for the LM747E unless otherwise

specified. The LM747 and LM747C are specified for V

S

e

g

15V andb55§CsT

A

s

125§C and 0§CsT

A

s

70§C, respectively, unless otherwise specified.

Note 4: Calculated value from: 0.35/Rise Time (m s).

Schematic Diagram (Each Amplifier)

TL/H/11479– 1

Note: Numbers in parentheses are pin numbers for amplifier B. DIP only.

3