NSC LM6165WG-QMLV, LM6165J-QMLV, LM6165J-MLS Datasheet

LM6165/LM6265/LM6365
High Speed Operational Amplifier

General Description

The LM6165 family of high-speed amplifiers exhibits an ex­cellent speed-power product in delivering 300 V/µs and
725 MHz GBW (stable for gains as low as +25) with only
5 mA of supply current. Further power savings and applica­tion convenience are possible by taking advantage of the
wide dynamic range in operating supply voltage which ex­tends all the way down to +5V.

These amplifiers are built with National’s VIP

™

(VerticallyIn­tegrated PNP) process which produces fast PNP transistors
that are true complements to the already fast NPN devices.
This advanced junction-isolated process delivers high speed
performance without the need for complex and expensive di­electric isolation.

Features

n High slew rate: 300 V/µs

n High GBW product: 725 MHz
n Low supply current: 5 mA
n Fast settling: 80 ns to 0.1

%

n Low differential gain:

<

0.1

%

n Low differential phase:

<

0.1˚

n Wide supply range: 4.75V to 32V
n Stable with unlimited capacitive load

Applications

n Video amplifier
n Wide-bandwidth signal conditioning
n Radar
n Sonar

Connection Diagrams

VIP™is a trademark of National SemiconductorCorporation.

10-Lead Flatpak

Top View

DS009152-14

Order Number LM6165W/883

See NS Package Number W10A

DS009152-8

Order Number LM6165J/883

See NS Package Number J08A

Order Number LM6365M

See NS Package Number M08A

Order Number LM6265N or LM6365N

See NS Package Number N08E

May 1999

LM6165/LM6265/LM6365 High Speed Operational Amplifier

© 1999 National Semiconductor Corporation DS009152 www.national.com

Connection Diagrams (Continued)

Temperature Range Package NSC

Drawing

Military Industrial Commercial

−55˚C ≤ T

A

≤ +125˚C −25˚C ≤ TA≤ +85˚C 0˚C ≤ TA≤ +70˚C

LM6265N LM6365N 8-Pin N08E

Molded DIP
LM6165J/883 8-Pin J08A
5962-8962501PA Ceramic DIP

LM6365M 8-Pin Molded M08A

Surface Mt.
LM6165WG/883 10-Lead WG10A
5962-8962501XA Ceramic SOIC
LM6165W883 10-Pin W10A
5962-8962501HA Ceramic Flatpak

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage (V

+−V−

) 36V

Differential Input Voltage

(Note 7)

±

8V

Common-Mode Voltage

Range (Note 11) (V

+

− 0.7V) to (V−+ 0.7V)

Output Short Circuit to GND

(Note 2) Continuous

Soldering Information

Dual-In-Line Package (N, J)

Soldering (10 sec.) 260˚C

Small Outline Package (M)

Vapor Phase (60 sec.)
Infrared (15 sec.)

215˚C
220˚C

See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering

surface mount devices.
Storage Temp Range −65˚C to +150˚C
Max Junction Temperature

(Note 3) 150˚C

ESD Tolerance (Notes 7, 8)

±

700V

Operating Ratings

Temperature Range (Note 3)

LM6165, LM6165J/883 −55˚C ≤ T

J

≤ +125˚C

LM6265 −25˚C ≤ T

J

≤ +85˚C

LM6365 0˚C ≤ T

J

≤ +70˚C

Supply Voltage Range 4.75V to 32V

DC Electrical Characteristics

The following specifications apply for Supply Voltage

=

±

15V, V

CM

=

0, R

L

≥ 100 kΩ and R

S

=

50Ω unless otherwise noted.

Boldface limits apply for T

A

=

T

J

=

T

MIN

to T

MAX

; all other limits T

A

=

T

J

=

25˚C.

Symbol Parameter Conditions Typ LM6165 LM6265 LM6365 Units

Limit Limit Limit

(Notes 4, 12) (Note 4) (Note 4)

V

OS

Input Offset Voltage 1 3 3 6 mV

447Max

V

OS

Input Offset Voltage 3 µV/˚C
Drift Average Drift
I

b

Input Bias Current 2.5 3 3 5 µA

656Max

I

OS

Input Offset Current 150 350 350 1500 nA

800 600 1900 Max

I

OS

Input Offset Current 0.3 nA/˚C
Drift Average Drift
R

IN

Input Resistance Differential 20 kΩ
C

IN

Input Capacitance 6.0 pF
A

VOL

Large Signal V

OUT

=

±

10V, 10.5 7.5 7.5 5.5 V/mV

Min

Voltage Gain R

L

=

2kΩ 5.0 6.0 5.0

(Note 10) R

L

=

10 kΩ 38

V

CM

Input Common-Mode Supply

=

±

15V +14.0 +13.9 +13.9 +13.8 V

Voltage Range +13.8 +13.8 +13.7 Min

−13.6 −13.4 −13.4 −13.3 V

−13.2 −13.2 −13.2 Min
Supply=+5V 4.0 3.9 3.9 3.8 V
(Note 5) 3.8 3.8 3.7 Min

1.4 1.6 1.6 1.7 V

1.8 1.8 1.8 Max

CMRR Common-Mode −10V ≤ V

CM

≤ +10V 102 88 88 80 dB

Rejection Ratio 82 84 78 Min

PSRR Power Supply

±

10V ≤ V±≤±16V 104 88 88 80 dB

Rejection Ratio 82 84 78 Min

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DC Electrical Characteristics (Continued)

The following specifications apply for Supply Voltage

=

±

15V, V

CM

=

0, R

L

≥ 100 kΩ and R

S

=

50Ω unless otherwise noted.

Boldface limits apply for T

A

=

T

J

=

T

MIN

to T

MAX

; all other limits T

A

=

T

J

=

25˚C.

Symbol Parameter Conditions Typ LM6165 LM6265 LM6365 Units

Limit Limit Limit

(Notes 4, 12) (Note 4) (Note 4)

V

O

Output Voltage Supply

=

±

15V, +14.2 +13.5 +13.5 +13.4 V

Swing R

L

=

2kΩ +13.3 +13.3 +13.3 Min

−13.4 −13.0 −13.0 −12.9 V

−12.7 −12.8 −12.8 Min
Supply=+5V 4.2 3.5 3.5 3.4 V
R

L

=

2kΩ(Note 5) 3.3 3.3 3.3 Min

1.3 1.7 1.7 1.8 V

2.0 1.9 1.9 Max
Output Short Source 65 30 30 30 mA
Circuit Current 20 25 25 Min

Sink 65 30 30 30 mA

20 25 25 Min

I

S

Supply Current 5.0 6.5 6.5 6.8 mA

6.8 6.7 6.9 Max

AC Electrical Characteristics

The following specifications apply for Supply Voltage

=

±

15V, V

CM

=

0, R

L

≥ 100 kΩ and R

S

=

50Ω unless otherwise noted.

Boldface limits apply for T

A

=

T

J

=

T

MIN

to T

MAX

; all other limits T

A

=

T

J

=

25˚C. (Note 6)

Symbol Parameter Conditions Typ LM6165 LM6265 LM6365 Units

Limit Limit Limit

(Notes 4, 12) (Note 4) (Note 4)

GBW Gain Bandwidth F=20 MHz 725 575 575 500 MHz

Min

350

Product Supply

=

±

5V 500

SR Slew Rate A

V

=

+25 (Note 9) 300 200 200 200 V/µs

Min

180

Supply

=

±

5V 200

PBW Power Bandwidth V

OUT

=

20 V

PP

4.5 MHz

Product

t

S

Settling Time 10V Step to 0.1

%

80 ns

A

V

=

−25, R

L

=

2kΩ

φ

m

Phase Margin A

V

=

+25 45 Deg

A

D

Differential Gain NTSC, A

V

=

+25

<

0.1

%

φ

D

Differential Phase NTSC, A

V

=

+25

<

0.1 Deg

e

np-p

Input Noise Voltage F=10 kHz 5

i

np-p

Input Noise Current F=10 kHz 1.5

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.

Note 2: Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150˚C.
Note 3: The typical junction-to-ambient thermal resistance of the molded plastic DIP (N) is 105˚C/Watt, and the molded plastic SO (M) package is 155˚C/Watt, and

the cerdip (J) package is 125˚C/Watt. All numbers apply for packages soldered directly into a printed circuit board.

Note 4: All limits guaranteed by testing or correlation.
Note 5: For single supply operation, the following conditions apply: V+=5V, V−=0V, V

CM

=

2.5C, V

OUT

=

2.5V. Pin1&Pin8(V

OS

Adjust) are each connected

to Pin 4 (V−) to realize maximum output swing. This connection will degrade V

OS

.

Note 6: C

L

≤ 5pF.

Note 7: In order to achieve optimum AC performance, the input stage was designed without protective clamps. Exeeding the maximum differential input voltage re­sults in reverse breakdown of the base-emitter junction of one of the input transistors and probable degradation of the input parameters (especially V

OS,IOS

, and

Noise).

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