NSC LM6164WG-QMLV, LM6164W-MLS, LM6164J-QMLV, LM6164W-SMD Datasheet

LM6164/LM6264/LM6364
High Speed Operational Amplifier

General Description

The LM6164 family of high-speed amplifiers exhibits an ex­cellent speed-power product in delivering 300V per µs and
175 MHzGBW (stable down to gains as low as +5) with only
5 mA of supply current. Further power savings and applica­tion convenience are possible by taking advantage of the
wide dynamic range in operating supply voltage which ex­tends all the way down to +5V.

These amplifiers are built with National’s VIP

™

(VerticallyIn­tegrated PNP) process which produces fast PNP transistors
that are true complements to the already fast NPN devices.
This advanced junction-isolated process delivers high speed
performance without the need forcomplex and expensive di­electric isolation.

Features

n High slew rate: 300 V/µs
n High GBW product: 175 MHz
n Low supply current: 5 mA
n Fast settling: 100 ns to 0.1

%

n Low differential gain:

<

0.1

%

n Low differential phase:

<

0.1˚

n Wide supply range: 4.75V to 32V
n Stable with unlimited capacitive load

Applications

n Video amplifier
n Wide-bandwidth signal conditioning
n Radar
n Sonar

Connection Diagrams

VIP™is a trademark of National Semiconductor Corporation.

DS009153-8

NS Package Number
J08A, M08A or N08E

10-Lead Flatpak

DS009153-15

Top View

NS Package Number W10A

May 1999

LM6164/LM6264/LM6364 High Speed Operational Amplifier

© 1999 National Semiconductor Corporation DS009153 www.national.com

Connection Diagrams (Continued)

Temperature Range Package NSC

Drawing

Military Industrial Commercial

−55˚C ≤ T

A

≤ +125˚C −25˚C ≤ TA≤ +85˚C 0˚C ≤ TA≤ +70˚C

LM6264N LM6364N 8-Pin Molded DIP N08E
LM6164J/883 8-Pin Ceramic DIP J08A
5962-8962401PA

LM6364M 8-Pin Molded Surface Mt. M08A
LM6164WG/883 10-Lead Ceramic SOIC WG10A
5962-8962401XA
LM6164W/883 10-Pin W10A
5962-8962401HA Ceramic Flatpak

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage (V

+−V−

) 36V

Differential Input Voltage

(Note 7)

±

8V

Common-Mode Input Voltage

(Note 11) (V

+

− 0.7V) to (V−+ 0.7V)

Output Short Circuit to Gnd

(Note 2) Continuous

Soldering Information

Dual-In-Line Package (N, J)

Soldering (10 sec.) 260˚C

Small Outline Package (M)

Vapor Phase (60 sec.) 215˚C
Infrared (15 sec.) 220˚C

See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering

surface mount devices.
Storage Temperature Range −65˚C to +150˚C
Max Junction Temperature

(Note 3) 150˚C

ESD Tolerance (Notes 7, 8)

±

700V

Operating Ratings

Temperature Range (Note 3)

LM6164 −55˚C ≤ T

J

≤ +125˚C

LM6264 −25˚C ≤ T

J

≤ +85˚C

LM6364 0˚C ≤ T

J

≤ +70˚C

Supply Voltage Range 4.75V to 32V

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage
to the device may occur. Operating Ratings indicate conditions for which the
device is functional, but do not guarantee specific performance limits.

DC Electrical Characteristics

The following specifications apply for Supply Voltage

=

±

15V, V

CM

=

0, R

L

≥ 100 kΩ and R

S

=

50Ω unless otherwise noted.

Boldface limits apply for T

A

=

T

J

=

T

MIN

to T

MAX

; all other limits T

A

=

T

J

=

25˚C.

LM6164 LM6264 LM6364

Symbol Parameter Conditions Typ Limit Limit Limit Units

(Notes 4, 12) (Note 4) (Note 4)

V

OS

Input Offset Voltage 2 4 4 9 mV

6611max

V

OS

Input Offset Voltage 6 µV/˚C
Drift Average Drift
I

b

Input Bias Current 2.5 3 3 5 µA

656max

I

OS

Input Offset Current 150 350 350 1500 nA

800 600 1900 max

I

OS

Input Offset Current 0.3 nA/˚C
Drift Average Drift
R

IN

Input Resistance Differential 100 kΩ
C

IN

Input Capacitance 3.0 pF
A

VOL

Large Signal V

OUT

=

±

10V, R

L

=

2kΩ 2.5 1.8 1.8 1.3 V/mV

Voltage Gain (Note 10) 0.9 1.2 1.1 min

R

L

=

10 kΩ 9

V

CM

Input Common-Mode Supply

=

±

15V +14.0 +13.9 +13.9 +13.8 V

Voltage Range +13.8 +13.8 +13.7 min

−13.5 −13.3 −13.3 −13.2 V

−13.1 −13.1 −13.1 min
Supply=+5V 4.0 3.9 3.9 3.8 V
(Note 5) 3.8 3.8 3.7 min

1.5 1.7 1.7 1.8 V

1.9 1.9 1.9 max

CMRR Common-Mode −10V ≤ V

CM

≤ +10V 105 86 86 80 dB

Rejection Ratio 80 82 78 min

PSRR Power Supply

±

10V ≤ V±≤±16V 96 86 86 80 dB

Rejection Ratio 80 82 78 min

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DC Electrical Characteristics (Continued)

The following specifications apply for Supply Voltage

=

±

15V, V

CM

=

0, R

L

≥ 100 kΩ and R

S

=

50Ω unless otherwise noted.

Boldface limits apply for T

A

=

T

J

=

T

MIN

to T

MAX

; all other limits T

A

=

T

J

=

25˚C.

LM6164 LM6264 LM6364

Symbol Parameter Conditions Typ Limit Limit Limit Units

(Notes 4, 12) (Note 4) (Note 4)

V

O

Output Voltage Supply=+5V +14.2 +13.5 +13.5 +13.4 V
Swing and R

L

=

2kΩ +13.3 +13.3 +13.3 min

−13.4 −13.0 −13.0 −12.9 V

−12.7 −12.8 −12.8 min
Supply=+5V 4.2 3.5 3.5 3.4 V
and R

L

=

2kΩ 3.3 3.3 3.3 min

(Note 10) 1.3 1.7 1.7 1.8 V

2.0 1.9 1.9 max
Output Short Source 65 30 30 30 mA
Circuit Current 20 25 25 min

Sink 65 30 30 30 mA

20 25 25 min

I

S

Supply Current 5.0 6.5 6.5 6.8 mA

6.8 6.7 6.9 min

AC Electrical Characteristics

The following specifications apply for Supply Voltage

=

±

15V, V

CM

=

0, R

L

≥ 100 kΩ and R

S

=

50Ω unless otherwise noted.

Boldface limits apply for T

A

=

T

J

=

T

MIN

to T

MAX

; all other limits T

A

=

T

J

=

25˚C.

LM6164 LM6264 LM6364

Symbol Parameter Conditions Typ Limit Limit Limit Units

(Notes 4, 12) (Note 4) (Note 4)

GBW Gain-Bandwidth F=20 MHz 175 140 140 120 MHz

min

Product 100 120 100

Supply

=

±

5V 120

SR Slew Rate A

V

=

+5 (Note 9) 300 200 200 200 V/µs

min

180 180 180

Supply

=

±

5V 200

PBW Power Bandwidth V

OUT

=

20 V

PP

4.5 MHz

T

S

Settling Time 10V Step to 0.1

%

100 ns

A

V

=

−4, R

L

=

2kΩ

φ

m

Phase Margin A

V

=

+5 45 Deg

A

D

Differential Gain NTSC, A

V

=

+10

<

0.1

%

φ

D

Differential Phase NTSC, A

V

=

+10

<

0.1 Deg

e

np-p

Input Noise F=10 kHz 8

Voltage

i

np-p

Input Noise F=10 kHz 1.5
Current

Note 2: Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150˚C.
Note 3: The typical junction-to-ambient thermal resistance of the molded plastic DIP (N) is 105˚C/Watt, the molded plastic SO (M) package is 155˚C/Watt, and the

cerdip (J) package is 125˚C/Watt. All numbers apply for packages soldered directly into a printed circuit board.

Note 4: Limits are guaranteed by testing or correlation.
Note 5: For single supply operation, the following conditions apply: V

+

=

5V,V

−

=

0V,V

CM

=

2.5V,V

OUT

=

2.5V.Pin1&Pin8(V

OS

Adjust) are each connected to

Pin4(V

−

) to realize maximum output swing. This connection will degrade VOS.

Note 6: C

L

≤ 5pF.

Note 7: Inorder to achieve optimum AC performance, the input stage was designed without protective clamps. Exceeding the maximum differential input voltage re­sults in reverse breakdown of the base-emitter junction of one of the input transistors and probable degradation of the input parameters (especially V

OS,IOS

, and

Noise).
Note 8: Theaveragevoltagethattheweakestpincombinations(thoseinvolvingPin2orPin 3) can withstand and still conform to the datasheet limits. The test circuit

used consists of the human body model of 100 pF in series with 1500Ω.

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