Datasheet LM6164WG-QMLV, LM6164W-MLS, LM6164J-QMLV, LM6164W-SMD Datasheet (NSC)

LM6164/LM6264/LM6364
High Speed Operational Amplifier

General Description

The LM6164 family of high-speed amplifiers exhibits an ex­cellent speed-power product in delivering 300V per µs and
175 MHzGBW (stable down to gains as low as +5) with only
5 mA of supply current. Further power savings and applica­tion convenience are possible by taking advantage of the
wide dynamic range in operating supply voltage which ex­tends all the way down to +5V.

These amplifiers are built with National’s VIP

™

(VerticallyIn­tegrated PNP) process which produces fast PNP transistors
that are true complements to the already fast NPN devices.
This advanced junction-isolated process delivers high speed
performance without the need forcomplex and expensive di­electric isolation.

Features

n High slew rate: 300 V/µs
n High GBW product: 175 MHz
n Low supply current: 5 mA
n Fast settling: 100 ns to 0.1

%

n Low differential gain:

<

0.1

%

n Low differential phase:

<

0.1˚

n Wide supply range: 4.75V to 32V
n Stable with unlimited capacitive load

Applications

n Video amplifier
n Wide-bandwidth signal conditioning
n Radar
n Sonar

Connection Diagrams

VIP™is a trademark of National Semiconductor Corporation.

DS009153-8

NS Package Number
J08A, M08A or N08E

10-Lead Flatpak

DS009153-15

Top View

NS Package Number W10A

May 1999

LM6164/LM6264/LM6364 High Speed Operational Amplifier

© 1999 National Semiconductor Corporation DS009153 www.national.com

Connection Diagrams (Continued)

Temperature Range Package NSC

Drawing

Military Industrial Commercial

−55˚C ≤ T

A

≤ +125˚C −25˚C ≤ TA≤ +85˚C 0˚C ≤ TA≤ +70˚C

LM6264N LM6364N 8-Pin Molded DIP N08E
LM6164J/883 8-Pin Ceramic DIP J08A
5962-8962401PA

LM6364M 8-Pin Molded Surface Mt. M08A
LM6164WG/883 10-Lead Ceramic SOIC WG10A
5962-8962401XA
LM6164W/883 10-Pin W10A
5962-8962401HA Ceramic Flatpak

www.national.com 2

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage (V

+−V−

) 36V

Differential Input Voltage

(Note 7)

±

8V

Common-Mode Input Voltage

(Note 11) (V

+

− 0.7V) to (V−+ 0.7V)

Output Short Circuit to Gnd

(Note 2) Continuous

Soldering Information

Dual-In-Line Package (N, J)

Soldering (10 sec.) 260˚C

Small Outline Package (M)

Vapor Phase (60 sec.) 215˚C
Infrared (15 sec.) 220˚C

See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering

surface mount devices.
Storage Temperature Range −65˚C to +150˚C
Max Junction Temperature

(Note 3) 150˚C

ESD Tolerance (Notes 7, 8)

±

700V

Operating Ratings

Temperature Range (Note 3)

LM6164 −55˚C ≤ T

J

≤ +125˚C

LM6264 −25˚C ≤ T

J

≤ +85˚C

LM6364 0˚C ≤ T

J

≤ +70˚C

Supply Voltage Range 4.75V to 32V

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage
to the device may occur. Operating Ratings indicate conditions for which the
device is functional, but do not guarantee specific performance limits.

DC Electrical Characteristics

The following specifications apply for Supply Voltage

=

±

15V, V

CM

=

0, R

L

≥ 100 kΩ and R

S

=

50Ω unless otherwise noted.

Boldface limits apply for T

A

=

T

J

=

T

MIN

to T

MAX

; all other limits T

A

=

T

J

=

25˚C.

LM6164 LM6264 LM6364

Symbol Parameter Conditions Typ Limit Limit Limit Units

(Notes 4, 12) (Note 4) (Note 4)

V

OS

Input Offset Voltage 2 4 4 9 mV

6611max

V

OS

Input Offset Voltage 6 µV/˚C
Drift Average Drift
I

b

Input Bias Current 2.5 3 3 5 µA

656max

I

OS

Input Offset Current 150 350 350 1500 nA

800 600 1900 max

I

OS

Input Offset Current 0.3 nA/˚C
Drift Average Drift
R

IN

Input Resistance Differential 100 kΩ
C

IN

Input Capacitance 3.0 pF
A

VOL

Large Signal V

OUT

=

±

10V, R

L

=

2kΩ 2.5 1.8 1.8 1.3 V/mV

Voltage Gain (Note 10) 0.9 1.2 1.1 min

R

L

=

10 kΩ 9

V

CM

Input Common-Mode Supply

=

±

15V +14.0 +13.9 +13.9 +13.8 V

Voltage Range +13.8 +13.8 +13.7 min

−13.5 −13.3 −13.3 −13.2 V

−13.1 −13.1 −13.1 min
Supply=+5V 4.0 3.9 3.9 3.8 V
(Note 5) 3.8 3.8 3.7 min

1.5 1.7 1.7 1.8 V

1.9 1.9 1.9 max

CMRR Common-Mode −10V ≤ V

CM

≤ +10V 105 86 86 80 dB

Rejection Ratio 80 82 78 min

PSRR Power Supply

±

10V ≤ V±≤±16V 96 86 86 80 dB

Rejection Ratio 80 82 78 min

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DC Electrical Characteristics (Continued)

The following specifications apply for Supply Voltage

=

±

15V, V

CM

=

0, R

L

≥ 100 kΩ and R

S

=

50Ω unless otherwise noted.

Boldface limits apply for T

A

=

T

J

=

T

MIN

to T

MAX

; all other limits T

A

=

T

J

=

25˚C.

LM6164 LM6264 LM6364

Symbol Parameter Conditions Typ Limit Limit Limit Units

(Notes 4, 12) (Note 4) (Note 4)

V

O

Output Voltage Supply=+5V +14.2 +13.5 +13.5 +13.4 V
Swing and R

L

=

2kΩ +13.3 +13.3 +13.3 min

−13.4 −13.0 −13.0 −12.9 V

−12.7 −12.8 −12.8 min
Supply=+5V 4.2 3.5 3.5 3.4 V
and R

L

=

2kΩ 3.3 3.3 3.3 min

(Note 10) 1.3 1.7 1.7 1.8 V

2.0 1.9 1.9 max
Output Short Source 65 30 30 30 mA
Circuit Current 20 25 25 min

Sink 65 30 30 30 mA

20 25 25 min

I

S

Supply Current 5.0 6.5 6.5 6.8 mA

6.8 6.7 6.9 min

AC Electrical Characteristics

The following specifications apply for Supply Voltage

=

±

15V, V

CM

=

0, R

L

≥ 100 kΩ and R

S

=

50Ω unless otherwise noted.

Boldface limits apply for T

A

=

T

J

=

T

MIN

to T

MAX

; all other limits T

A

=

T

J

=

25˚C.

LM6164 LM6264 LM6364

Symbol Parameter Conditions Typ Limit Limit Limit Units

(Notes 4, 12) (Note 4) (Note 4)

GBW Gain-Bandwidth F=20 MHz 175 140 140 120 MHz

min

Product 100 120 100

Supply

=

±

5V 120

SR Slew Rate A

V

=

+5 (Note 9) 300 200 200 200 V/µs

min

180 180 180

Supply

=

±

5V 200

PBW Power Bandwidth V

OUT

=

20 V

PP

4.5 MHz

T

S

Settling Time 10V Step to 0.1

%

100 ns

A

V

=

−4, R

L

=

2kΩ

φ

m

Phase Margin A

V

=

+5 45 Deg

A

D

Differential Gain NTSC, A

V

=

+10

<

0.1

%

φ

D

Differential Phase NTSC, A

V

=

+10

<

0.1 Deg

e

np-p

Input Noise F=10 kHz 8

Voltage

i

np-p

Input Noise F=10 kHz 1.5
Current

Note 2: Continuous short-circuit operation at elevated ambient temperature can result in exceeding the maximum allowed junction temperature of 150˚C.
Note 3: The typical junction-to-ambient thermal resistance of the molded plastic DIP (N) is 105˚C/Watt, the molded plastic SO (M) package is 155˚C/Watt, and the

cerdip (J) package is 125˚C/Watt. All numbers apply for packages soldered directly into a printed circuit board.

Note 4: Limits are guaranteed by testing or correlation.
Note 5: For single supply operation, the following conditions apply: V

+

=

5V,V

−

=

0V,V

CM

=

2.5V,V

OUT

=

2.5V.Pin1&Pin8(V

OS

Adjust) are each connected to

Pin4(V

−

) to realize maximum output swing. This connection will degrade VOS.

Note 6: C

L

≤ 5pF.

Note 7: Inorder to achieve optimum AC performance, the input stage was designed without protective clamps. Exceeding the maximum differential input voltage re­sults in reverse breakdown of the base-emitter junction of one of the input transistors and probable degradation of the input parameters (especially V

OS,IOS

, and

Noise).
Note 8: Theaveragevoltagethattheweakestpincombinations(thoseinvolvingPin2orPin 3) can withstand and still conform to the datasheet limits. The test circuit

used consists of the human body model of 100 pF in series with 1500Ω.

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AC Electrical Characteristics (Continued)

Note 9: V

IN

=

4V step. For supply

=

±

5V, V

IN

=

1V step.

Note 10: Voltage Gain is the total output swing (20V) divided by the input signal required to produce that swing.
Note 11: The voltage between V

+

and either input pin must not exceed 36V.

Note 12: AmilitaryRETS electrical test specification is available on request. At the time of printing, the LM6164J/883 RETS spec complied with the Boldface limits
in this column. The LM6164J/883 may also be procured as Standard Military Drawing

#

5962-8962401PA.

Typical Performance Characteristics (R

L

=

10 kΩ,T

A

=

25˚C unless otherwise specified)

Supply Current vs
Supply Voltage

DS009153-16

Common-Mode
Rejection Ratio

DS009153-17

Power Supply
Rejection Ratio

DS009153-18

Gain-Bandwidth
Product

DS009153-19

Propagation Delay
Rise and Fall Time

DS009153-20

Gain-Bandwidth Product
vs Load Capacitance

DS009153-21

Slew Rate vs
Load Capacitance

DS009153-22

Overshoot vs
Load Capacitance

DS009153-23

Slew Rate

DS009153-24

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Typical Performance Characteristics (R

L

=

10 kΩ,T

A

=

25˚C unless otherwise

specified) (Continued)

Voltage Gain vs
Load Resistance

DS009153-25

Gain vs Supply Voltage

DS009153-26

Differential Gain

(Note 13)

DS009153-6

Differential Phase

(Note 13)

DS009153-7

Note 13: Differential gain and differential phase measured for four series LM6364 op amps in series with an LM6321 buffer. Error added by LM6321 is negligible.
Test performed using Tektronix Type 520 NTSC test system. Configured with a gain of +5 (each output attenuated by 80%)

Step Response; Av=+5

TIME (50 ns /div)

Input (1v /div) Output (5v/div)

DS009153-1

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Typical Performance Characteristics (R

L

=

10 kΩ,T

A

=

25˚C unless otherwise

specified) (Continued)

Input Noise Voltage

DS009153-27

Input Noise Current

DS009153-28

Power Bandwidth

DS009153-29

Open-Loop
Frequency Response

DS009153-30

Open-Loop
Frequency Response

DS009153-31

Output Resistance
Open-Loop

DS009153-32

Common-Mode Input
Saturation Voltage

DS009153-33

Output Saturation Voltage

DS009153-34

Bias Current vs
Common-Mode Voltage

DS009153-35

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Simplified Schematic

Applications Tips

The LM6364 hasbeen compensated forgains of 5or greater
(over specified rangesof temperature, powersupply voltage,
and load). Since this compensation involved adding
emitter-degeneration resistors in the op amp’s input stage,
the open-loop gain was reduced as the stability increased.
Gain error due to reduced A

VOL

is most apparent at high
gains; thus, the uncompensated LM6365 is appropriate for
gains of 25 or more. If unity-gain operation is desired, the
LM6361 should be used. The LM6361, LM6364, and
LM6365 have the same high slew rate (typically 300 V/µs),
regardless of their compensation.

The LM6364 is unusually tolerant of capacitive loads. Most
op amps tend to oscillate when their load capacitance is
greater than about 200 pF (in low-gain circuits). However,
load capacitance on the LM6364 effectively increases its
compensation capacitance, thus slowing the op amp’s re­sponse and reducing its bandwidth. The compensation is not
ideal, though, and ringing or oscillation may occur in
low-gain circuits with large capacitiveloads. Toovercompen­sate the LM6364 for operation at gains less than 5, a series
resistor-capacitor network should be added between the in­put pins (as shown in the Typical Applications, Noise Gain
Compensation) so that the high-frequency noise gain rises
to at least 5.

Power supply bypassing will improve the stability and tran­sient response of the LM6364, and is recommended for ev­ery design. 0.01 µF to 0.1 µF ceramic capacitors should be
used (from each supply “rail” to ground); if the device is far
away from its power supply source, an additional 2.2 µF to
10 µF (tantalum) may be required for extra noise reduction.

Keep all leads short to reduce stray capacitance and lead in­ductance, and make sure ground paths are low-impedance,
especially where heavier currents will be flowing. Stray ca­pacitance in the circuit layout can cause signal coupling be­tween adjacent nodes, so that circuit gain unintentionally
varies with frequency.

Breadboarded circuits will work best if they are built using
generic PC boards with a good ground plane. If the op amps
are used with sockets, asopposed to being soldered into the
circuit, the additional input capacitance may degrade circuit
performance.

DS009153-3

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Typical Applications

Offset Voltage Adjustment

DS009153-10

Video-Bandwidth Amplifier

DS009153-12

Noise-Gain Compensation for Gains ≤5

DS009153-11

RXCX≥ (2π•25 MHz)

−1

5R

X

=

R

1+RF

(1+R1/R2)

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Physical Dimensions inches (millimeters) unless otherwise noted

Ceramic Dual-In-Line Package (J)

Order Number LM6164J/883

NS Package Number J08A

Molded Package SO (M)

Order Number LM6364M

NS Package Number M08A

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Physical Dimensions inches (millimeters) unless otherwise noted (Continued)

Molded Dual-In-Line Package (N)

Order Number LM6264N or LM6364N

NS Package Number N08E

10-Pin Ceramic Flatpak

Order Number LM6164W/883

NS Package Number W10A

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Notes

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NATIONAL’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT AND GENERAL
COUNSEL OF NATIONAL SEMICONDUCTOR CORPORATION. As used herein:

1. Life support devices or systems are devices or

systems which, (a) are intended for surgical implant
into the body, or (b) support or sustain life, and
whose failure to perform when properly used in
accordance with instructions for use provided in the
labeling, can be reasonably expected to result in a
significant injury to the user.

2. A critical component is any component of a life
support device or system whose failure to perform
can be reasonably expected to cause the failure of
the life support device or system, or to affect its
safety or effectiveness.

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LM6164/LM6264/LM6364 High Speed Operational Amplifier

National does not assume any responsibility for use of any circuitry described, no circuit patent licenses are implied and National reserves the right at any time without notice to change said circuitry and specifications.