NSC LM6162J-QMLV Datasheet

LM6162
High Speed Operational Amplifier

General Description

The LM6162 family of high-speed amplifiers exhibits an ex­cellent speed-power product, delivering 300 V/µs and
100 MHz gain-bandwidth product (stable for gains as low as
+2 or −1) with only 5 mA of supply current. Further power
savings and application convenience are possible by taking
advantage of the wide dynamic range in operating supply
voltage which extends all the way down to +5V.

These amplifiers are built with National’s VIP

™

(VerticallyIn­tegrated PNP) process which provides fast transistors that
are true complements to the already fast NPN devices. This
advanced junction-isolated process delivers high speed per­formance without the need for complex and expensive di­electric isolation.

Features

n High slew rate: 300 V/µs

n High gain-bandwidth product: 100 MHz
n Low supply current: 5 mA
n Fast settling time: 120 ns to 0.1

%

n Low differential gain:

<

0.1

%

n Low differential phase:

<

0.1˚

n Wide supply range: 4.75V to 32V
n Stable with unlimited capacitive load
n Well behaved; easy to apply

Applications

n Video amplifier
n Wide-bandwidth signal conditioning for image

processing (FAX, scanners, laser printers)

n Hard disk drive preamplifier
n Error amplifier for high-speed switching regulator

Connection Diagrams

Temperature Range Package NSC

Drawing

Military Industrial Commercial

−55˚C ≤ T

A

≤ +125˚C −25˚C ≤ TA≤ +85˚C 0˚C ≤ TA≤ +70˚C

LM6162N 8-Pin Molded DIP N08E
LM6162J/883 8-Pin Ceramic DIP J08A
5962-9216501PA
LM6162WG/883 10-Lead Ceramic SOIC WG10A
5962-9216501XA

VIP™is a trademark of National Semiconductor Corporation.

10-Pin Ceramic Flatpak

DS011061-15

Top View

See NS Package Number W10A

DS011061-2

See NS Package Number N08E or J08A

May 1999

LM6162 High Speed Operational Amplifier

© 1999 National Semiconductor Corporation DS011061 www.national.com

Connection Diagrams (Continued)

Temperature Range Package NSC

Drawing

Military Industrial Commercial

−55˚C ≤ T

A

≤ +125˚C −25˚C ≤ TA≤ +85˚C 0˚C ≤ TA≤ +70˚C

LM6162W/883 10-Pin Ceramic Flatpak W10A
5962-9216501HA

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Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage (V

+–V−

) 36V

Differential Input Voltage (Note 2)

±

8V

Common-Mode Input Voltage (V

+

−0.7V) to

(Note 3) (V

−

+ 0.7V)

Output Short Circuit to GND

(Note 4) Continuous

Soldering Information

Dual-In-Line Package (N)

Soldering (10 seconds) 260˚C

Small Outline Package (M)

Vapor Phase (60 seconds)
Infrared (15 seconds)

215˚C
220˚C

See AN-450 “Surface Mounting Methods and Their Effect
on Product Reliability” for other methods of soldering
surface mount devices.

Storage Temperature Range −65˚C ≤ T

J

≤ +150˚C
Max Junction Temperature 150˚C
ESD Tolerance (Note 5)

±

1100V

Operating Ratings

Temperature Range (Note 6)

LM6162 −55˚C ≤ T

J

≤ +125˚C
Supply Voltage Range 4.75V to 32V

DC Electrical Characteristics

These limits apply for supply voltage

=

±

15V, V

CM

=

0V, and R

L

≥ 100 kΩ, unless otherwise specified. Limits in standard

typeface are for T

A

=

T

J

=

25˚C; limits in boldface type apply over the Operating Temperature Range.

Typical

(Note 7)

LM6162

Symbol Parameter Conditions Limit Units

(Note 8)

V

OS

Input Offset Voltage

±

3

±

5mV

±

8max

Input Offset Voltage

7 µV/˚C

Average Drift

I

bias

Input Bias Current 2.2 3 µA

6 max

I

OS

Input Offset Current

±

150

±

350 nA

±

800 max

Input Offset Current

0.3 nA/˚C

Average Drift

R

IN

Input Resistance Differential 180 kΩ

C

IN

Input Capacitance 2.0 pF

A

VOL

Large Signal V

OUT

=

±

10V, R

L

=

2kΩ 1400 1000 V/V

Voltage Gain (Note 9) 500 min

R

L

=

10 kΩ 6500 V/V

V

CM

Input Common-Mode Supply

=

±

15V +14.0 +13.9 V

Voltage Range +13.8 min

−13.2 −12.9 V

−12.7 max
Supply=+5V 4.0 3.9 V
(Note 10) 3.8 min

1.6 1.8 V

2.0 max

CMRR Common-Mode −10V ≤ V

CM

≤ +10V 100 83 dB

Rejection Ratio 79 min

PSRR Power Supply

±

10V ≤ VS≤±16V 93 83 dB

Rejection Ratio 79 min

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DC Electrical Characteristics (Continued)

These limits apply for supply voltage

=

±

15V, V

CM

=

0V, and R

L

≥ 100 kΩ, unless otherwise specified. Limits in standard

typeface are for T

A

=

T

J

=

25˚C; limits in boldface type apply over the Operating Temperature Range.

Typical

(Note 7)

LM6162

Symbol Parameter Conditions Limit Units

(Note 8)

V

O

Output Voltage Supply

=

±

15V, R

L

=

2kΩ +14.2 +13.5 V

Swing +13.3 min

−13.4 −13.0 V

−12.7 max

V

O

Output Voltage Swing Supply=+5V and 4.2 3.5 V

R

L

=

2kΩ(Note 10) 3.3 min

1.3 1.7 V

2.0 max

I

OSC

Output Short Sourcing 65 30 mA
Circuit Current 20 min

Sinking 65 30 mA

20 min

I

S

Supply Current 5.0 6.5 mA

6.8 max

AC Electrical Characteristics

These limits apply for supply voltage

=

±

15V, V

CM

=

0V, R

L

≥ 100 kΩ, and CL≤ 5 pF, unless otherwise specified. Limits

in standard typeface are for T

A

=

T

J

=

25˚C; limits in boldface type apply over the Operating Temperature Range.

Typical

(Note

7)

LM6162

Symbol Parameter Conditions Limit Units

(Note 8)

GBW Gain-Bandwidth Product f=20 MHz 100 80 MHz

55 min

Supply

=

±

5V 70 MHz

SR Slew Rate A

V

=

+2 (Note 11) 300 200 V/µs

180 min

Supply

=

±

5V 200 V/µs

PBW Power Bandwidth V

OUT

=

20 V

PP

4.5 MHz

t

s

Settling Time 10V step, to 0.1

%

100 ns

A

V

=

−1, R

L

=

2kΩ

φ

m

Phase Margin A

V

=

+2 45 deg

Differential Gain NTSC, A

V

=

+2

<

0.1

%

Differential Phase NTSC, A

V

=

+2

<

0.1 deg

e

n

Input Noise Voltage f=10 kHz 10 nV/√Hz

i

n

Input Noise Current f=10 kHz 1.2 pA/√Hz

Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the de­vice beyond its rated operating conditions.

Note 2: The ESD protection circuitry between the inputs will begin to conduct when the differential input voltage reaches 8V.
Note 3: a) In addition, the voltage between the V

+

pin and either input pin must not exceed 36V.

b) When the voltage applied to an input pin is driven more than 3V below the negative supply pin voltage, a substrate diode begins to conduct. Current through this
pin must then be kept less than 20 mA to limit damage from self-heating.

Note 4: Although the output current is internally limited, continuous short-circuitoperationatelevated ambient temperature can result in exceeding the maximum al­lowed junction temperature of 150˚C.

Note 5: This value is the average voltage that the weakest pin combinations can withstand and still conform to the datasheet limits. The test circuit used consists
of the human body model, 100 pF in series with 1500Ω.

Note 6: The typical thermal resistance, junction-to-ambient, of the molded plastic DIP (N package) is 105˚C/W. For the molded plastic SO (M package), use
155˚C/W. All numbers apply for packages soldered directly into a printed circuit board.

Note 7: Typical values are for T

J

=

25˚C, and represent the most likely parametric norm.

Note 8: Limits are guaranteed, by testing or correlation.

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