NSC LM615AIN, LM615AMJ-883 Datasheet

December 1994

LM615 Quad Comparator and Adjustable Reference

LM615 Quad Comparator and Adjustable Reference

General Description

The comparators have an input range which extends to the
negative supply, and have open-collector outputs. Improved
over the LM139 series, the input stages of the comparators
have lateral PNP input transistors which enable low input
currents for large differential input voltages and swings

a

above V

The voltage reference is a three-terminal shunt-type band­gap, and is referred to the V

.

b

terminal. Two resistors pro-

gram the reference from 1.24V to 6.3V, with accuracy of

g

0.6% available. The reference features operation over a
shunt current range of 17 mA to 20 mA, low dynamic imped­ance, broad capacitive load range, and cathode terminal
voltage ranging from a diode-drop below V

b

to above Va.

As a member of National’s Super-BlockTMfamily, the
LM615 is a space-saving monolithic alternative to a multi­chip solution, offering a high level of integration without sac­rificing performance.

Connection Diagram

M Package

Features

COMPARATORS

Y

Low operating current 600 mA

Y

Wide supply voltage range 4V to 36V

Y

Open-collector outputs

Y

Input common-mode range Vbto (V

Y

Wide differential input voltage

a

b

REFERENCE

Y

Adjustable output voltage 1.24V to 6.3V

Y

Tight initial tolerance available

Y

Wide operating current range 17 mAto20mA

Y

Tolerant of load capacitance

g

0.6% (25§C)

Applications

Y

Adjustable threshold detector

Y

Time-delay generator

Y

Voltage window comparator

Y

Power supply monitor

Y

RGB level detector

N Package

1.8V)

g

36V

Top View

TL/H/11057– 24

Top View

TL/H/11057– 1

Ordering Information

For information about surface-mount packaging of this device, please contact the

Analog Product Marketing group at National Semiconductor Corp. headquarters.

Reference

Tolerances

g

0.6% at 25§C, LM615AMN LM615AIN 16-Pin N16A
C max Molded DIP

80 ppm/

§

b

55§CsT

LM615AMJ/883 16-Pin J16A

g

2.0% at 25§C, LM615MN LM615IN 16-Pin N16A

150 ppm/§C max Molded DIP

Super-BlockTMis a trademark of National Semiconductor Corporation.

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

TL/H/11057

Temperature Range

Military Industrial Package Package Number

s

a

125§C

J

b

40§CsT

s

a

85§C

J

NSC

(Note 13) Ceramic DIP

LM615IM 16-Pin Narrow M16A

Surface Mount

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Voltage on Any Pin Except V

(referred to Vbpin)
(Note 2) 36V (Max)
(Note 3)

Current through Any Input Pin

and V

Pin

RO

Differential Input Voltage

Output Short-Circuit Duration (Note 4)

Storage Temperature Range

RO

b

65§CsT

b

0.3V (Min)

g

s

a

J

20 mA

g

36V

150§C

Maximum Junction Temperature 150

Thermal Resistance, Junction-to-Ambient (Note 5)

N Package 95

§

Soldering Information

N Package Soldering (10 seconds) 260

ESD Tolerance (Note 6)

g

Operating Temperature Range

LM615AI, LM615I

LM615A, LM615M

b

40§CsT

b

55§CsT

s

a

85§C

J

s

a

125§C

J

C/W

1kV

C

§

C

§

Electrical Characteristics

These specifications apply for V
GND, unless otherwise specified. Limits in standard typeface are for T

b

e

GNDe0V, V

a

e

5V, V

CM

Operating Temperature Range.

Symbol Parameter Conditions

COMPARATORS

I

S

V

V

DV

I

B

I

OS

A

t

R

I

SINK

I

L

OS

OS

DT

V

Total Supply Current VaCurrent, R

Offset Voltage over 4VsV

a

V

Range 2.0 6.0 7.0 mV max

Offset Voltage over 0VsV
V

Range V

CM

Average Offset

OS

3V

a

s

s

V

a

s

CM

a

e

30V, R

Voltage Drift

Input Bias Current

Input Offset Current 0.2 4 4 nA max

Voltage Gain R

Large Signal V
Response Time Swing, R

Output Sink Current V

Output Leakage V
Current V

e

10 kX to 36V, 500 50 50 V/mV

L

s

2V

V

OUT

e

1.4V, V

a

IN

L

e

0V, V

a

IN

e

1V, V

a

IN

e

36V 0.2 mA

OUT

e %

LOAD

36V 350 600 650 mA max

36V, R

s

(V

e

L

s

27V min

e

5.1 kX 2.0 ms

b

b

, 250 550 600 mA max

e

15 kX 1.0 3.0 5.0 mV max

L

a

b

1.8V) 1.0 3.0 5.0 mV max

15 kX 1.5 6.0 7.0 mV max

e

TTL 1.5 ms

b

IN

e

1V, 20 10 10 mA min

IN

e

IN

V

OUT

V

OUT

0V, 0.1 10 10 mA max

e

e

V

Va/2, I

OUT

e

J

e

100 mA, FEEDBACK pin shorted to

R

25§C; limits in boldface type apply over the

LM615AM LM615M

Typical LM615AI LM615I

(Note 7) Limits Limits

(Note 8) (Note 8)

15 mV/

b

5 25 35 nA max

b

830 40nA max

0.3 5 5 nA max

100 V/mV

e

1.5V 13 8 8 mA min

e

0.4V 2.8 1.0 0.8 mA min

2.4 0.5 0.5 mA min

Units

C

§

2

Electrical Characteristics

These specifications apply for V
GND, unless otherwise specified. Limits in standard typeface are for T
Operating Temperature Range. (Continued)

b

e

GNDe0V, V

a

e

5V, V

CM

e

V

OUT

J

e

e

Va/2, I

e

100 mA, FEEDBACK pin shorted to

R

25§C; limits in boldface type apply over the

LM615AM LM615M

Symbol Parameter Conditions

Typical LM615AI LM615I

(Note 7) Limits Limits

(Note 8) (Note 8)

VOLTAGE REFERENCE (Note 9)

V

R

DV

DT

DV

kH

DV

DT

DV

DI

R

R Resistance DV

DV

DV

DV

DV

I

FB

e

n

Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the
device beyond its rated operating conditions.

Note 2: Input voltage above V

Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below

b

V
and unpredictable when any parasitic diode or transistor is conducting.

Note 4: Shorting an Output to V

a

V
If the total power from all shorted outputs causes the junction temperature to exceed 150
determine junction temperature, see Note 5.

Note 5: Junction temperature may be calculated using T
packages soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal i

Note 6: Human body model, 100 pF discharge through a 1.5 kX resistor.

Note 7: Typical values in standard typeface are for T

most likely parametric norm.

Note 8: All limits are guaranteed for T

Note 9: V

1.244V).

Note 10: Average reference drift is calculated from the measurement of the reference voltage at 25

6

10
parameter is guaranteed by design and sample testing.

Note 11: Hysteresis is the change in V
hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25

Note 12: Low contact resistance is required for accurate measurement.

Note 13: A military RETS electrical test specification is available on request. The LM615AMJ/883 may also be procured as a Standard Military Drawing.

Reference 1.244 1.2365 1.2191 V min
Voltage 1.2515 1.2689 V max

g

(

0.6%) (g2%)

Average Drift (Note 10)

R

with Temperature max

e

Average Drift T

R

with Time T

Hysteresis (Note 11)

R

J

VRChange V

R

with Current 0.1 1.1 1.1 mV max

R[100 mA

V

R[10 mA

(Note 12) 2.0 5.5 5.5 mV max

DV

VRChange V

R

with V

RO

VRChange V

R

a

with V

FEEDBACK V

RO

a

Change 0.1 1.3 1.3 mV max

R[V

R[Vae5V

V

R[Vae5V

b

Bias Current 29 40 55 nA max

b

V

]

R[17 mA

b

V

]

R[100 mA

R[10 mA to 0.1 mA

R[100 mAto17mA

b

e

]

V

RO

R

b

V

]

b

V

]

s

s

V

5.06V 22 35 50 nA max

FB

]

]

/9.9 mA 0.2 0.56 0.56 X max

]

/83 mA 0.6 13 13 X max

]

V

R[V

RO

R[Vae36V

R[Vae3V

40§C 400 ppm/kH

J

e

150§C 1000 ppm/kH

J

e

]

6.3V

]

]

18 80 150

3.2 mV/

0.05 1 1 mV max

1.5 5 5 mV max

2.5 5 5 mV max

2.8 10 10 mV max

0.1 1.2 1.2 mV max

0.01 1 1 mV max

0.01 1.5 1.5 mV max

Voltage Noise BWe10 Hz to 10 kHz 30 mV

a

is allowed. As long as one input pin voltage remains inside the common-mode range, the comparator will deliver the correct output.

, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined

b

), will cause 80 mA (typ.) to be drawn through the output transistor. This current multiplied by the applied voltage is the power dissipation in the output transistor.

is the reference output voltage, which may be set for 1.2V to 6.3V (see Application Information). VRis the VRO-to-FEEDBACK voltage (nominally

RO

DVR/V

#

R[25§C

#

]

will not cause power dissipation, so it may be continuous. However, shorting an Output to any more positive voltage (including

C, degraded reliability or destruction of the device may occur. To

§

e

a

T

PDiJA. The given thermal resistance is worst-case for packages in sockets in still air. For

J

A

e

25§C; values in boldface type apply for the full operating temperature range. These values represent the

J

ea

25§C (standard type face) or over the full operating temperature range (bold type face).

J

DTJ, where DVRis the lowest value subtracted from the highest, V

caused by a change in TJ, after the reference has been ‘‘dehysterized.’’ To dehysterize the reference; that is minimize the

RO

C and at the temperature extremes. The drift, in ppm/§C, is

§

is the value at 25§C, and DTJis the temperature range. This

]

R[25§C

is 80§C/W for the N package.

JA

C: 25§C, 85§C,b40§C, 70§C, 0§C, 25§C.

§

Units

ppm/

§

RMS

C

§

C

3

Simplified Schematic Diagrams

Reference Bias

Comparator

TL/H/11057– 2

TL/H/11057– 3

4

Typical Performance Characteristics (Reference)

e

T

25§C, FEEDBACK pin shorted to V

J

b

e

0V, unless otherwise noted.

Reference Voltage
vs Temperature

Reference Voltage
vs Current
and Temperature

Reference Voltage
vs Reference Current

Reference Voltage
Drift vs Time

Reference Voltage
vs Current
and Temperature

Reference AC
Stability Range

Accelerated Reference
Voltage Drift vs Time

Reference Voltage
vs Reference Current

FEEDBACK Current
vs FEEDBACK-to-V

b

Voltage

FEEDBACK Current
vs FEEDBACK-to-V
Voltage

b

Reference Noise
Voltage vs Frequency

Reference Small-Signal
Resistance vs Frequency

TL/H/11057– 4

5