NSC LM614IWMX, LM614IWM, LM614CWM, LM614CWMX, LM614MWC Datasheet
LM614
Quad Operational Amplifier and Adjustable Reference
General Description
The LM614 consists of four op-amps and a programmable
voltage reference in a 16-pin package. The op-amp
out-performs most single-supply op-amps by providing
higher speed and bandwidth along with low supply current.
This device was specifically designed to lower cost and
board space requirements in transducer, test, measurement
and data acquisition systems.
Combining a stable voltage reference with four wide output
swing op-amps makes the LM614 ideal for single supply
transducers, signal conditioning and bridge driving where
large common-mode-signals are common. The voltage reference consists of a reliable band-gap design that maintains
low dynamic output impedance (1Ω typical), excellent initial
tolerance (0.6%), and the ability to be programmed from
1.2V to 6.3V via two external resistors. The voltage reference is very stableevenwhen driving large capacitive loads,
as are commonly encountered in CMOS data acquisition
systems.
As a member of National’s new Super-Block
™
family, the
LM614 is a space-saving monolithic alternative to a multichip
solution, offering a high level of integration without sacrificing
performance.
Features
Op Amp
n Low operating current: 300 µA
n Wide supply voltage range: 4V to 36V
n Wide common-mode range: V
−
to (V+− 1.8V)
n Wide differential input voltage:
±
36V
n Available in plastic package rated for Military
Temperature Range Operation
Reference
n Adjustable output voltage: 1.2V to 6.3V
n Tight initial tolerance available:
±
0.6
%
n Wide operating current range: 17 µA to 20 mA
n Tolerant of load capacitance
Applications
n Transducer bridge driver and signal processing
n Process and mass flow control systems
n Power supply voltage monitor
n Buffered voltage references for A/D’s
Connection Diagram
Ordering Information
Reference
Tolerance & V
OS
Temperature Range Package NSC
Drawing
Military Industrial Commercial
−55˚C ≤ T
A
≤ +125˚C −40˚C ≤ TA≤ +85˚C 0˚C ≤ TA≤ +70˚C
±
0.6
%
@
LM614AMN LM614AIN — 16-pin N16E
80 ppm/˚C max Molded DIP
V
OS
≤ 3.5 mV max LM614AMJ/883 — — 16-pin J16A
(Note 13) Ceramic DIP
±
2.0
%
@
LM614MN LM614BIN LM614CN 16-pin N16E
150 ppm/˚C max Molded DIP
V
OS
≤ 5.0 mV — LM614WM LM614CWM 16-pin Wide M16B
Surface Mount
Super-Block™is a trademark of National Semiconductor Corporation.
DS009326-1
May 1998
LM614 Quad Operational Amplifier and Adjustable Reference
© 1999 National Semiconductor Corporation DS009326 www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Voltage on Any Pins except V
R
(referred to V−pin)
(Note 2) 36V (Max)
(Note 3) −0.3V (Min)
Current through Any Input Pin &
V
R
Pin
±
20 mA
Differential Input Voltage
Military and Industrial
±
36V
Commercial
±
32V
Storage Temperature Range −65˚C ≤ T
J
≤ +150˚C
Maximum Junction Temperature 150˚C
Thermal Resistance, Junction-to-Ambient (Note 4)
N Package 100˚C
WM Package 150˚C
Soldering Information (Soldering, 10 seconds)
N Package 260˚C
WM Package 220˚C
ESD Tolerance (Note 5)
±
1kV
Operating Temperature Range
LM614AI, LM614I, LM614BI −40˚C ≤ TJ≤ +85˚C
LM614AM, LM614M −55˚C ≤ T
J
≤ +125˚C
LM614C 0˚C ≤ T
J
≤ +70˚C
Electrical Characteristics
These specifications apply for V
−
=
GND=0V, V
+
=
5V, V
CM
=
V
OUT
=
2.5V, I
R
=
100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for T
J
=
25˚C; limits in boldface type apply over the Operating
Temperature Range .
Symbol Parameter Conditions Typical
(Note 6)
LM614AM LM614M Units
LM614AI LM614BI
Limits LM614I
(Note 7) LM614C
Limits
(Note 7)
I
S
Total Supply R
LOAD
=
∞
, 450 940 1000 µA max
Current 4V ≤ V
+
≤ 36V (32V for LM614C) 550 1000 1070 µA max
V
S
Supply Voltage Range 2.2 2.8 2.8 V min
2.9 3 3 V min
46 36 32 V max
43 36 32 V max
OPERATIONAL AMPLIFIER
V
OS1
VOSOver Supply 4V ≤ V+≤ 36V 1.5 3.5 5.0 mV max
(4V ≤ V
+
≤ 32V for LM614C) 2.0 6.0 7.0 mV max
V
OS2
VOSOver V
CM
V
CM
=
0V through V
CM
=
1.0 3.5 5.0 mV max
(V
+
− 1.8V), V
+
=
30V 1.5 6.0 7.0 mV max
Average VOSDrift (Note 7)
15
µV/˚C
max
I
B
Input Bias Current 10 25 35 nA max
11 30 40 nA max
I
OS
Input Offset Current 0.2 4 4 nA max
0.3 5 5 nA max
Average Offset
Drift Current
4 pA/˚C
R
IN
Input Resistance Differential 1800 MΩ
Common-Mode 3800 MΩ
C
IN
Input Capacitance Common-Mode Input 5.7 pF
e
n
Voltage Noise f=100 Hz, Input Referred 74
I
n
Current Noise f=100 Hz, Input Referred 58
CMRR Common-Mode V
+
=
30V, 0V ≤ V
CM
≤ (V+− 1.8V), 95 80 75 dB min
Rejection Ratio CMRR=20 log (∆V
CM
/∆VOS) 90 75 70 dB min
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Electrical Characteristics (Continued)
These specifications apply for V
−
=
GND=0V, V
+
=
5V, V
CM
=
V
OUT
=
2.5V, I
R
=
100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for T
J
=
25˚C; limits in boldface type apply over the Operating
Temperature Range .
Symbol Parameter Conditions Typical
(Note 6)
LM614AM LM614M Units
LM614AI LM614BI
Limits LM614I
(Note 7) LM614C
Limits
(Note 7)
OPERATIONAL AMPLIFIER
PSRR Power Supply 4V ≤ V
+
≤ 30V, V
CM
=
V
+
/2, 110 80 75 dB min
Rejection Ratio PSRR=20 log (∆V
+
/∆VOS) 100 75 70 dB min
A
V
Open Loop R
L
=
10 kΩ to GND, V
+
=
30V, 500 100 94 V/mV
Voltage Gain 5V ≤ V
OUT
≤ 25V 50 40 40 min
SR Slew Rate V
+
=
30V (Note 8)
±
0.70
±
0.55
±
0.50 V/µs
±
0.65
±
0.45
±
0.45
GBW Gain Bandwidth C
L
=
50 pF 0.8 MHz
0.52 MHz
V
O1
Output Voltage R
L
=
10 kΩ to GND V
+
− 1.4 V+− 1.7 V+− 1.8 V min
Swing High V
+
=
36V (32V for LM614C) V
+
− 1.6 V+− 1.9 V+− 1.9 V min
V
O2
Output Voltage R
L
=
10 kΩ to V
+
V−+ 0.8 V−+ 0.9 V−+ 0.95 V max
Swing Low V
+
=
36V (32V for LM614C) V
−
+ 0.9 V−+ 1.0 V−+ 1.0 V max
I
OUT
Output Source V
OUT
=
2.5V, V
+IN
=
0V, 25 20 16 mA min
V
−IN
=
−0.3V 15 13 13 mA min
I
SINK
Output Sink V
OUT
=
1.6V, V
+IN
=
0V, 17 14 13 mA min
Current V
−IN
=
0.3V 98 8mA min
I
SHORT
Short Circuit Current V
OUT
=
0V, V
+IN
=
3V, 30 50 50 mA max
V
−IN
=
2V, Source 40 60 60 mA max
V
OUT
=
5V, V
+IN
=
2V, 30 60 70 mA max
V
−IN
=
3V, Sink 32 80 90 mA max
VOLTAGE REFERENCE
V
R
Voltage Reference (Note 9) 1.244 1.2365 1.2191 V min
1.2515 1.2689 V max
(
±
0.6%)(
±
2.0%)
Average Temperature (Note 10) 10 80 150 PPM/˚C
Drift max
Hysteresis (Note 11)
3.2 µV/˚C
VRChange V
R(100 µA)−VR(17 µA)
0.05 1 1 mV max
with Current 0.1 1.1 1.1 mV max
V
R(10 mA)−VR(100 µA)
1.5 5 5 mV max
(Note 12) 2.0 5.5 5.5 mV max
R Resistance ∆V
R(10→0.1 mA)
/9.9 mA 0.2 0.56 0.56 Ω max
∆V
R(100→17 µA)
/83 µA 0.6 13 13 Ω max
VRChange V
R(Vro=Vr)−VR(Vro=6.3V)
2.5 7 7 mV max
with High V
RO
(5.06V between Anode and 2.8 10 10 mV max
FEEDBACK)
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Electrical Characteristics (Continued)
These specifications apply for V
−
=
GND=0V, V
+
=
5V, V
CM
=
V
OUT
=
2.5V, I
R
=
100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for T
J
=
25˚C; limits in boldface type apply over the Operating
Temperature Range .
Symbol Parameter Conditions Typical
(Note 6)
LM614AM LM614M Units
LM614AI LM614BI
Limits LM614I
(Note 7) LM614C
Limits
(Note 7)
VOLTAGE REFERENCE
VRChange with V
R(V +=5V)−VR(V +=36V)
0.1 1.2 1.2 mV max
V
+
Change (V
+
=
32V for LM614C) 0.1 1.3 1.3 mV max
V
R(V +=5V)−VR(V +=3V)
0.01 1 1 mV max
0.01 1.5 1.5 mV max
I
FB
FEEDBACK Bias V
ANODE
≤ VFB≤ 5.06V 22 35 50 nA max
Current 29 40 55 nA max
e
n
Voltage Noise BW=10 Hz to 10 kHz, 30 µV
RMS
V
RO
=
V
R
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions.
Note 2: Input voltage above V
+
is allowed.
Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
V
−
, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined
and unpredictable when any parasitic diode or transistor is conducting.
Note 4: Junction temperature may be calculated using T
J
=
T
A+PDθjA
. The given thermal resistance is worst-case for packages in sockets in still air.For packages
soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θ
jA
are 90˚C/W for the N package, WM package.
Note 5: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 6: Typical values in standard typeface are for T
J
=
25˚C; values in boldface type apply for the full operating temperature range. These values represent the
most likely parametric norm.
Note 7: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold type face).
Note 8: Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V, and the output voltage
transition is sampled at 10V and
@
20V.For falling slew rate, the input voltage is driven from 25V to 5V,and the output voltage transition is sampled at 20V and 10V.
Note 9: V
R
is the Cathode-feedback voltage, nominally 1.244V.
Note 10: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
10
6
•
∆VR/(V
R[25˚C]
•
∆TJ), where ∆VRis the lowest value subtracted from the highest, V
R[25˚C]
is the value at 25˚C, and ∆TJis the temperature range. This parameter
is guaranteed by design and sample testing.
Note 11: Hysteresis is the change in V
R
caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the
hysteresis to the typical value, cycle its junction temperature in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.
Note 12: Low contact resistance is required for accurate measurement.
Note 13: Amilitary RETSLM614AMX electrical test specification is available on request. The LM614AMJ/883 can also be procured as a Standard Military Drawing.
Simplified Schematic Diagrams
Op Amp
DS009326-2
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Simplified Schematic Diagrams (Continued)
Typical Performance Characteristics (Reference) T
J
=
25˚C, FEEDBACK pin shorted to V
−
=
0V, unless otherwise noted
Reference / Bias
DS009326-3
Reference Voltage
vs Temperature
on 5 Representative Units
DS009326-47
Reference Voltage Drift
DS009326-48
Accelerated Reference
Voltage Drift vs Time
DS009326-49
Reference Voltage vs
Current and Temperature
DS009326-50
Reference Voltage vs
Current and Temperature
DS009326-51
Reference Voltage vs
Reference Current
DS009326-52
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Typical Performance Characteristics (Reference) T
J
=
25˚C, FEEDBACK pin shorted to V
−
=
0V, unless otherwise noted (Continued)
Reference Voltage vs
Reference Current
DS009326-53
Reference AC
Stability Range
DS009326-54
FEEDBACK Current vs
FEEDBACK-to-Anode
Voltage
DS009326-55
FEEDBACK Current vs
FEEDBACK-to-Anode
Voltage
DS009326-56
Reference Noise Voltage
vs Frequency
DS009326-57
Reference Small-Signal
Resistance vs Frequency
DS009326-58
Reference Power-Up Time
DS009326-59
Reference Voltage with
FEEDBACK Voltage Step
DS009326-60
Reference Voltage with
100
z
12 µA Current Step
DS009326-61
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