LM614
Quad Operational Amplifier and Adjustable Reference
LM614 Quad Operational Amplifier and Adjustable Reference
General Description
The LM614 consists of four op-amps and a programmable
voltage reference in a 16-pin package. The op-amp
out-performs most single-supply op-amps by providing
higher speed and bandwidth along with low supply current.
This device was specifically designed to lower cost and
board space requirements in transducer, test, measurement
and data acquisition systems.
Combining a stable voltage reference with four wide output
swing op-amps makes the LM614 ideal for single supply
transducers, signal conditioning and bridge driving where
large common-mode-signals are common. The voltage reference consists of a reliable band-gap design that maintains
low dynamic output impedance (1Ω typical), initial tolerance
(2.0%), and the ability to be programmed from 1.2V to 5.0V
via two external resistors. The voltage reference is very
stable even when driving large capacitive loads, as are
commonly encountered in CMOS data acquisition systems.
As a member of National’s new Super-Block
LM614 is a space-saving monolithic alternative to a multichip
solution, offering a high level of integration without sacrificing
performance.
™
family, the
Connection Diagram
Features
Op Amp
n Low operating current:450µA
n Wide supply voltage range: 4V to 36V
n Wide common-mode range: V
n Wide differential input voltage:
Reference
n Adjustable output voltage: 1.2V to 5.0V
n Initial tolerance:
n Wide operating current range: 17µA to 20mA
n Tolerant of load capacitance
±
2.0%
−
to (V+− 1.8V)
±
36V
Applications
n Transducer bridge driver and signal processing
n Process and mass flow control systems
n Power supply voltage monitor
n Buffered voltage references for A/D’s
00932601
Ordering Information
Temperature
Package
16-Pin Wide
Body SOIC
Super-Block™is a trademark of National Semiconductor Corporation.
−40˚C to 85˚CLM614IWMLM614IWMRails
LM614IWMXLM614IWM1k Units Tape and Reel
Absolute Maximum Ratings (Note 1)
LM614
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Voltage on Any Pins except V
R
(referred to V−pin)
(Note 2)36V (Max)
(Note 3)−0.3V (Min)
Current through Any Input Pin &
V
Pin
R
±
20 mA
Differential Input Voltage
LM614I
LM614C
Electrical Characteristics
These specifications apply for V−= GND = 0V, V+= 5V, VCM=V
unless otherwise specified. Limits in standard typeface are for T
Temperature Range .
SymbolParameterConditionsTyp
I
S
V
S
OPERATIONAL AMPLIFIER
V
OS1
V
OS2
I
B
I
OS
Total SupplyR
LOAD
Current4V ≤ V
Supply Voltage Range2.22.8V min
VOSOver Supply4V ≤ V+≤ 36V1.55.0mV max
(4V ≤ V
VOSOver V
CM
VCM= 0V through VCM=1.05.0mV max
+
(V
− 1.8V), V+= 30V1.57.0mV max
Average VOSDrift(Note 7)
Input Bias Current1035nA max
Input Offset Current0.24nA max
Average Offset
Drift Current
Storage Temperature Range−65˚C ≤ T
≤ +150˚C
J
Maximum Junction Temperature150˚C
Thermal Resistance,
Junction-to-Ambient (Note 4)150˚C
Soldering Information (Soldering,
10 sec.)220˚C
ESD Tolerance (Note 5)
±
1kV
Operating Temperature Range
LM614I−40˚C ≤ TJ≤ +85˚C
±
±
36V
32V
LM614C0˚C ≤ T
= 2.5V, IR= 100µA, FEEDBACK pin shorted to GND,
OUT
= 25˚C; limits in Boldface type apply over the Operating
J
LM614I
(Note 6)
LM614C
Limits
(Note 7)
=∞,4501000µA max
+
≤ 36V (32V for LM614C)5501070µA max
2.93V min
4632V max
4332V max
+
≤ 32V for LM614C)2.07.0mV max
15
1140nA max
0.35nA max
4pA/˚C
≤ +70˚C
J
Units
µV/˚C
max
R
IN
Input ResistanceDifferential1800MΩ
Common-Mode3800MΩ
C
IN
e
n
I
n
Input CapacitanceCommon-Mode Input5.7pF
Voltage Noisef = 100 Hz, Input Referred74
Current Noisef = 100 Hz, Input Referred58
CMRRCommon-ModeV+= 30V, 0V ≤ VCM≤ (V+− 1.8V),9575dB min
Rejection RatioCMRR = 20 log (∆V
PSRRPower Supply4V ≤ V
+
≤ 30V, VCM=V+/2,11075dB min
Rejection RatioPSRR = 20 log (∆V
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/∆VOS)9070dB min
CM
+
/∆VOS)10070dB min
Electrical Characteristics (Continued)
These specifications apply for V−= GND = 0V, V+= 5V, VCM=V
unless otherwise specified. Limits in standard typeface are for T
Temperature Range .
SymbolParameterConditionsTyp
A
V
SRSlew RateV
GBWGain BandwidthC
V
O1
V
O2
I
OUT
I
SINK
I
SHORT
Open LoopRL=10kΩto GND, V+= 30V,50094V/mV
Voltage Gain5V ≤ V
+
L
≤ 25V5040min
OUT
= 30V (Note 8)
= 50 pF0.8MHz
Output VoltageRL=10kΩto GNDV+− 1.4V+− 1.8V min
Swing HighV
Output VoltageRL=10kΩto V
Swing LowV
Output SourceV
Output SinkV
CurrentV
Short Circuit CurrentV
+
= 36V (32V for LM614C)V+− 1.6V+− 1.9V min
+
= 36V (32V for LM614C)V−+ 0.9V−+ 1.0V max
= 2.5V, V
OUT
V
= −0.3V1513mA min
−IN
= 1.6V, V
OUT
= 0.3V98mA min
−IN
= 0V, V
OUT
V
= 2V, Source4060mA max
−IN
V
= 5V, V
OUT
V
= 3V, Sink3290mA max
−IN
+
+IN
+IN
+IN
+IN
VOLTAGE REFERENCE
V
R
Voltage Reference(Note 9)1.2441.2191V min
Average Temperature(Note 10)10150PPM/˚C
Driftmax
Hysteresis(Note 11)
= 2.5V, IR= 100µA, FEEDBACK pin shorted to GND,
OUT
= 25˚C; limits in Boldface type apply over the Operating
J
= 0V,2516mA min
= 0V,1713mA min
= 3V,3050mA max
= 2V,3070mA max
(Note 6)
LM614I
LM614C
Units
Limits
(Note 7)
±
±
0.70
0.65
±
0.50V/µs
±
0.45
0.52MHz
V−+ 0.8V−+ 0.95V max
1.2689V max
±
(
2.0%)
3.2µV/˚C
LM614
VRChangeV
with Current0.11.1mV max
V
(Note 12)2.05.5mV max
RResistance∆V
∆V
VRChangeV
with High V
RO
(3.76V between Anode and2.810mV max
FEEDBACK)
VRChange withV
+
V
Change(V+= 32V for LM614C)0.11.3mV max
V
I
FB
FEEDBACK BiasV
Current2955nA max
e
n
Voltage NoiseBW = 10 Hz to 10 kHz,30µV
R(100 µA)−VR(17 µA)
R(10 mA)−VR(100 µA)
R(10→0.1 mA)
R(100→17 µA)
R(Vro = Vr)−VR(Vro = 5.0V)
R(V + = 5V)−VR(V + = 36V)
R(V + = 5V)−VR(V + = 3V)
/9.9 mA0.20.56Ω max
/83 µA0.613Ω max
0.051mV max
1.55mV max
2.57mV max
0.11.2mV max
0.011mV max
0.011.5mV max
≤ VFB≤ 5.06V2250nA max
ANODE
RMS
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Electrical Characteristics (Continued)
These specifications apply for V−= GND = 0V, V+= 5V, VCM=V
LM614
unless otherwise specified. Limits in standard typeface are for T
Temperature Range .
SymbolParameterConditionsTyp
V
RO=VR
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the
device beyond its rated operating conditions.
Note 2: Input voltage above V
Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
−
V
, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined
and unpredictable when any parasitic diode or transistor is conducting.
Note 4: Junction temperature may be calculated usingT
soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θ
Note 5: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 6: Typical values in standard typeface are for T
most likely parametric norm.
Note 7: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold type face).
Note 8: Slew rate is measured with op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V,and the output voltage
transition is sampled at 10V and
Note 9: V
Note 10: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
10
is guaranteed by design and sample testing.
Note 11: Hysteresis is the change in V
hysteresis to the typical value, cycle its junction temperature in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.
Note 12: Low contact resistance is required for accurate measurement.
is the Cathode-feedback voltage, nominally 1.244V.
R
6
∆VR/(V
•
∆TJ), where ∆VRis the lowest value subtracted from the highest, V
•
R[25˚C]
+
is allowed.
J=TA+PDθjA
= 25˚C; values in boldface type apply for the full operating temperature range. These values represent the
J
@
20V.For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V and 10V.
caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the
R
. Thegiventhermalresistance is worst-case for packages in sockets in still air.For packages
Typical Performance Characteristics (Reference) T
= 0V, unless otherwise noted
Reference Voltage vs.
Temperature on 5 Representative UnitsReference Voltage Drift
= 2.5V, IR= 100µA, FEEDBACK pin shorted to GND,
OUT
= 25˚C; limits in Boldface type apply over the Operating
J
LM614I
(Note 6)
LM614C
Limits
(Note 7)
is 90˚C/W for the WM package.
jA
is the value at 25˚C, and ∆TJis the temperature range. This parameter
R[25˚C]
= 25˚C, FEEDBACK pin shorted to V
J
Units
−
00932647
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00932648
Typical Performance Characteristics (Reference) T
= 25˚C, FEEDBACK pin shorted to V
J
= 0V, unless otherwise noted (Continued)
Accelerated Reference Voltage Drift vs. TimeReference Voltage vs. Current and Temperature
LM614
−
00932649
00932650
Reference Voltage vs. Current and TemperatureReference Voltage vs. Reference Current
00932651
00932652
Reference Voltage vs. Reference CurrentReference AC Stability Range
00932653
00932654
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Typical Performance Characteristics (Reference) T
= 0V, unless otherwise noted (Continued)
LM614
FEEDBACK Current vs. FEEDBACK-to-Anode VoltageFEEDBACK Current vs. FEEDBACK-to-Anode Voltage
0093265500932656
Reference Noise Voltage vs. FrequencyReference Small-Signal Resistance vs. Frequency
= 25˚C, FEEDBACK pin shorted to V
J
−
0093265700932658
Reference Power-Up TimeReference Voltage with FEEDBACK Voltage Step
0093265900932660
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