Electrical Characteristics (Continued)
These specifications apply for V
−
=
GND=0V, V
+
=
5V, V
CM
=
V
OUT
=
2.5V, I
R
=
100 µA, FEEDBACK pin shorted to GND,
unless otherwise specified. Limits in standard typeface are for T
J
=
25˚C; limits in boldface type apply over the Operating
Temperature Range.
LM613AM LM613M
Typical LM613AI LM613I
Symbol Parameter Conditions (Note 7) Limits LM613C Units
(Note 8) Limits
(Note 8)
VOLTAGE REFERENCE
1.2515 1.2689 V (Max)
(
±
0.6%)(
±
2
%
)
Average Temp. Drift (Note 11) 10 80 150 ppm/˚C
(Max)
Hysteresis (Note 12) 3.2 µV/˚C
VRChange V
R(100 µA)−VR(17 µA)
0.05 1 1 mV (Max)
with Current 0.1 1.1 1.1 mV (Max)
V
R(10 mA)−VR(100 µA)
1.5 5 5 mV (Max)
(Note 13) 2.0 5.5 5.5 mV (Max)
R Resistance ∆V
R(10→0.1 mA)
/9.9 mA 0.2 0.56 0.56 Ω (Max)
∆V
R(100→17 µA)
/83 µA 0.6 13 13 Ω (Max)
VRChange V
R(Vro=Vr)−VR(Vro=6.3V)
2.5 7 7 mV (Max)
with High V
RO
(5.06V between Anode and 2.8 10 10 mV (Max)
FEEDBACK)
VRChange with V
R(V+=5V)−VR(V+=36V)
0.1 1.2 1.2 mV (Max)
V
ANODE
Change (V
+
=
32V for LM613C) 0.1 1.3 1.3 mV (Max)
V
R(V+=5V)−VR(V+=3V)
0.01 1 1 mV (Max)
0.01 1.5 1.5 mV (Max)
I
FB
FEEDBACK Bias V
ANODE
≤ VFB≤ 5.06V 22 35 50 nA (Max)
Current 29 40 55 nA (Max)
e
n
VRNoise 10 Hz to 10 kHz, 30 µV
RMS
V
RO
=
V
R
Note 1: Absolute maximum ratings indicate limits beyond which damage to the component may occur. Electrical specifications do not apply when operating the device beyond its rated operating conditions.
Note 2: Input voltage above V
+
is allowed. As long as one input pin voltage remains inside the common-mode range, the comparator will deliver the correct output.
Note 3: More accurately, it is excessive current flow, with resulting excess heating, that limits the voltages on all pins. When any pin is pulled a diode drop below
V
−
, a parasitic NPN transistor turns ON. No latch-up will occur as long as the current through that pin remains below the Maximum Rating. Operation is undefined
and unpredictable when any parasitic diode or transistor is conducting.
Note 4: Simultaneous short-circuit of multiple comparators while using high supply voltages may force junction temperature above maximum, and thus should not
be continuous.
Note 5: Junction temperature may be calculated using T
J
=
T
A+PDθJA
. The given thermal resistance is worst-case for packages in sockets in still air. For packages
soldered to copper-clad board with dissipation from one comparator or reference output transistor, nominal θ
JA
is 90˚C/W for the N package, and 135˚C/W for the
WM package.
Note 6: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 7: Typical values in standard typeface are for T
J
=
25˚C; values in bold face type apply for the full operating temperature range. These values represent the
most likely parametric norm.
Note 8: All limits are guaranteed at room temperature (standard type face) or at operating temperature extremes (bold type face).
Note 9: Slew rate is measured with the op amp in a voltage follower configuration. For rising slew rate, the input voltage is driven from 5V to 25V,and the output
voltage transition is sampled at 10V and
@
20V.For falling slew rate, the input voltage is driven from 25V to 5V, and the output voltage transition is sampled at 20V
and 10V.
Note 10: V
R
is the Cathode-to-feedback voltage, nominally 1.244V.
Note 11: Average reference drift is calculated from the measurement of the reference voltage at 25˚C and at the temperature extremes. The drift, in ppm/˚C, is
10
6
•
∆VR/(V
R[25˚C]
•
∆TJ), where ∆VRis the lowest value subtracted from the highest, V
R[25˚C]
is the value at 25˚C, and ∆TJis the temperature range. This parameter
is guaranteed by design and sample testing.
Note 12: Hysteresis is the change in V
R
caused by a change in TJ, after the reference has been “dehysterized”. To dehysterize the reference; that is minimize the
hysteresis to the typical value, its junction temperature should be cycled in the following pattern, spiraling in toward 25˚C: 25˚C, 85˚C, −40˚C, 70˚C, 0˚C, 25˚C.
Note 13: Low contact resistance is required for accurate measurement.
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