NSC LM4766T Datasheet

September 1998
LM4766 Overture
Dual 40W Audio Power Amplifier with Mute
LM4766
Overture
Audio Power Amplifier Series Dual 40W Audio Power Amplifier with Mute
General Description
The LM4766 is a stereo audio amplifier capable of delivering typically 40W per channel of continuous average output power into an 8load with less than 0.1%(THD + N).
The performance of the LM4766, utilizing its Self Peak In­stantaneous Temperature (˚Ke) (SPiKe cuitry, places it in a class above discrete and hybrid amplifi­ers by providing an inherently, dynamically protected Safe Operating Area (SOA). SPiKe Protection means that these parts are safeguarded at the output against overvoltage, un­dervoltage, overloads, including thermal runaway and in­stantaneous temperature peaks.
Each amplifier within the LM4766 has an independent smooth transition fade-in/out mute that minimizes output pops. The IC’s extremely low noise floor at 2 µV and its ex­tremely low THD + N value of 0.06%at the rated power make the LM4766 optimum for high-end stereo TVs or mini­component systems.
) Protection Cir-
Typical Application
Key Specifications
j
THD+N at 1 kHz at 2 x 30W continuous average output power into 8: 0.1%(max)
j
THD+N at 1 kHz at continuous average output power of 2 x 30W into 8: 0.009%(typ)
Features
n SPiKe Protection n Minimal amount of external components necessary n Quiet fade-in/out mute mode n Non-Isolated 15-lead TO-220 package
Applications
n High-end stereo TVs n Component stereo n Compact stereo
Connection Diagram
Plastic Package
Audio Power Amplifier Series
DS100928-2
Top View
Non-Isolated Package
Order Number LM4766T
See NS Package Number TA15A
DS100928-1
FIGURE 1. Typical Audio Amplifier Application Circuit
Note: Numbers in parentheses represent pinout for amplifier B.
*
Optional component dependent upon specific design requirements.
SPiKe™Protection and Overture™are trademarks of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation DS100928 www.national.com
Absolute Maximum Ratings (Notes 4, 5)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Supply Voltage |V
(No Input) 78V
Supply Voltage |V
(with Input) 74V
Common Mode Input Voltage (V
Differential Input Voltage 60V Output Current Internally Limited Power Dissipation (Note 6) 62.5W ESD Susceptability (Note 7) 3000V
|+|VEE|
CC
|+|VEE|
CC
or VEE) and
CC
|+|VEE| 60V
|V
CC
Junction Temperature (Note 8) 150˚C Thermal Resistance
Non-Isolated T-Package
θ
JC
1˚C/W
Soldering Information
T Package 260˚C
Storage Temperature −40˚C to +150˚C
Operating Ratings (Notes 4, 5)
Temperature Range
TA≤ T
T
MIN
Supply Voltage |V
MAX
|+|VEE| (Note 1) 20V to 60V
CC
−20˚C TA≤ +85˚C
Electrical Characteristics (Notes 4, 5)
The following specifications apply for V Limits apply for T
=
25˚C.
A
CC
=
+30V, V
Symbol Parameter Conditions LM4766 Units
| + Power Supply Voltage GND − VEE≥ 9V 18 20 V (min)
|V
CC
|V
| (Note 11) 60 V (max)
EE
P
O
Output Power THD + N=0.1%(max), (Note 3) (Continuous Average) f=1 kHz, f=20 kHz 40 30 W/ch (min) THD + N Total Harmonic Distortion 30 W/ch, R
Plus Noise A X SR
talk
Channel Separation f=1 kHz, V
Slew Rate V (Note 3)
I
total
Total Quiescent Power Both Amplifiers V (Note 2) Supply Current V V
OS
(Note 2) I
B
I
OS
I
O
V
OD
Input Offset Voltage V
Input Bias Current V
Input Offset Current V
Output Current Limit |VCC|=|VEE|=10V, t
Output Dropout Voltage |VCC–VO|, V (Note 2) (Note 12) |V PSRR Power Supply Rejection Ratio V (Note 2) V
CMRR Common Mode Rejection Ratio V (Note 2) V A
VOL
(Note 2)
Open Loop Voltage Gain R
GBWP Gain Bandwidth Product f e
IN
Input Noise IHF—A Weighting Filter 2.0 8 µV (max) (Note 3) R
=
−30V, I
EE
L
=
26 dB
V
O
=
1.2 Vrms, t
IN
=
=
0V, I
O
O
=
0V, I
CM
CM CM
V
O
CC CM
V
CC
V
CM CC CM L
O
IN
O–VEE
O
=
0V, I
O
=
0V, I
O
=
0V
CC
|, V
EE
=
30V to 10V, V
=
0V, I
O
=
30V, V
=
0V, I
O
=
50V to 10V, V
=
20V to −20V, I
=
2kΩ,V
=
100 kHz, V
=
600(Input Referred)
MUTE
=
−0.5 mA with R
=
8unless otherwise specified.
L
Typical Limit
(Note 9) (Note 10)
=
8,20Hzf20 kHz 0.06
=
10.9 Vrms 60 dB =
2 ns 9 5 V/µs (min)
rise
=
0V, 48 100 mA (max)
CM
0mA
=
0 mA 1 10 mV (max)
=
0 mA 0.2 1 µA (max)
=
0 mA 0.01 0.2 µA (max)
=
10 ms, 4 3 Apk (min)
ON
=
EE
=
=
=
0mA
0mA
O
IN
=
20V, I
−20V, I
=
=
+100 mA 1.5 4 V (max)
O
=
−100 mA 2.5 4 V (max)
O
=
−30V, 125 85 dB (min)
EE
−30V to −10V 110 85 dB (min)
=
−10V to −50V, 110 75 dB (min)
EE
=
0mA
O
40V 115 80 dB (min)
=
50 mVrms 8 2 MHz (min)
(Limits)
%
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Electrical Characteristics (Notes 4, 5) (Continued)
The following specifications apply for V Limits apply for T
=
25˚C.
A
CC
=
+30V, V
Symbol Parameter Conditions LM4766 Units
SNR Signal-to-Noise Ratio P
A
M
Note 1: Operation is guaranteed up to 60V, however,distortion may be introduced from SPiKe Protection Circuitry if proper thermal considerations are not taken into account. Refer to the Application Information section for a complete explanation.
Note 2: DC Electrical Test; Refer to Test Circuit Note 3: AC Electrical Test; Refer to Test Circuit Note 4: All voltages are measured with respect to the GND pins (5, 10), unless otherwise specified. Note 5: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC and AC electrical specifications under particular testconditionswhichguar­antee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is given, however, the typical value is a good indication of device performance.
Note 6: For operating at case temperatures above 25˚C, the device must be derated based on a 150˚C maximum junction temperature and a thermal resistance of
θ
JC
Note 7: Human body model, 100 pF discharged through a 1.5 kresistor. Note 8: The operating junction temperature maximum is 150˚C, however, the instantaneous Safe Operating Area temperature is 250˚C. Note 9: Typicals are measured at 25˚C and represent the parametric norm. Note 10: Limits are guarantees that all parts are tested in production to meet the stated values. Note 11: V
ferential between V Note 12: The output dropout voltage, V
formance Characteristics section.
Mute Attenuation Pin 6,11 at 2.5V 115 80 dB (min)
#
1.
#
2.
=
1˚C/W (junction to case) for the T package. Refer to the section Determining the Correct Heat Sink in the Application Information section.
must have at least −9V at its pin with reference to ground in order for the under-voltage protection circuitry to be disabled. In addition, the voltage dif-
EE
and VEEmust be greater than 14V.
CC
, is the supply voltage minus the clipping voltage. Refer to the Clipping Voltage vs. Supply Voltagegraph in the Typical Per-
OD
=
−30V, I
EE
MUTE
=
−0.5 mA with R
=
8unless otherwise specified.
L
Typical Limit
(Note 9) (Note 10)
=
1W, A — Weighted, 98 dB
O
Measured at 1 kHz, R
=
P
25W, A — Weighted 112 dB
O
Measured at 1 kHz, R
=
25
S
=
25
S
(Limits)
Test Circuit#1 (Note 2) (DC Electrical Test Circuit)
DS100928-3
www.national.com3
Test Circuit#2 (Note 3) (AC Electrical Test Circuit)
Bridged Amplifier Application Circuit
DS100928-4
FIGURE 2. Bridged Amplifier Application Circuit
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DS100928-5
Single Supply Application Circuit
FIGURE 3. Single Supply Amplifier Application Circuit
Note:*Optional components dependent upon specific design requirements.
DS100928-6
Auxiliary Amplifier Application Circuit
FIGURE 4. Special Audio Amplifier Application Circuit
DS100928-7
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