NSC LM4765T Datasheet
August 1998
LM4765 Overture
Dual 30W Audio Power Amplifier with Mute and Standby Modes
LM4765
Overture
™
Audio Power Amplifier Series Dual 30W Audio Power
Amplifier with Mute and Standby Modes
General Description
The LM4765 is a stereo audio amplifier capable of delivering
typically 30W per channel of continuous average output
power into an 8Ω load with less than 0.1%(THD + N).
Each amplifierhasanindependent smooth transition fade-in/
out mute and a power conserving standby mode which can
be controlled by external logic.
The performance of the LM4765, utilizing its Self Peak Instantaneous Temperature (˚Ke) (SPiKe
cuitry, places it in a class above discrete and hybrid amplifiers by providing an inherently, dynamically protected Safe
Operating Area (SOA). SPiKe Protection means that these
parts are safeguarded at the output against overvoltage, undervoltage, overloads, including thermal runaway and instantaneous temperature peaks.
™
) Protection Cir-
Typical Application
Key Specifications
j
THD+N at 1 kHz at 2 x 25W continuous average
output power into 8Ω: 0.1%(max)
j
THD+N at 1 kHz at continuous average
output power of 2 x 30W into 8Ω: 0.009%(typ)
j
Standby current: 6.5 mA (typ)
Features
n SPiKe Protection
n Minimal amount of external components necessary
n Quiet fade-in/out mute mode
n Standby-mode
n Non-Isolated 15-lead TO-220 package
Applications
n High-end stereo TVs
n Component stereo
n Compact stereo
Connection Diagram
Plastic Package
™
Audio Power Amplifier Series
DS100927-2
Top View
Non-Isolated Package
Order Number LM4765T
DS100927-1
FIGURE 1. Typical Audio Amplifier Application Circuit
Note: Numbers in parentheses represent pinout for amplifier B.
*
Optional component dependent upon specific design requirements.
SPiKe™Protection and Overture™are trademarks of National Semiconductor Corporation.
© 1999 National Semiconductor Corporation DS100927 www.national.com
See NS Package Number TA15A
Absolute Maximum Ratings (Notes 5, 4)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage |V
(No Input) 66V
Supply Voltage |V
(with Input) 64V
Common Mode Input Voltage (V
Differential Input Voltage 60V
Output Current Internally Limited
Power Dissipation (Note 6) 62.5W
ESD Susceptability (Note 7) 2000V
|+|VEE|
CC
|+|VEE|
CC
or VEE) and
CC
|+|VEE| ≤ 60V
|V
CC
Junction Temperature (Note 8) 150˚C
Thermal Resistance
Non-Isolated T-Package
θ
JC
1˚C/W
Soldering Information
T Package (10 sec.) 260˚C
Storage Temperature −40˚C to +150˚C
Operating Ratings (Notes 4, 5)
Temperature Range
≤ TA≤ T
T
MIN
Supply Voltage |V
MAX
|+|VEE|(Note 1) 20V to 64V
CC
−20˚C ≤ TA≤ +85˚C
Electrical Characteristics (Notes 4, 5)
The following specifications apply for V
25˚C.
CC
=
+28V, V
Symbol Parameter Conditions LM4765 Units
| + Power Supply Voltage GND − VEE≥ 9V 18 20 V (min)
|V
CC
|V
| (Note 11) 64 V (max)
EE
P
O
Output Power THD + N=0.1%(max),
(Note 3) (Continuous Average) f=1 kHz
THD + N Total Harmonic Distortion 30 W/ch, R
Plus Noise 15 W/ch, R
X
SR
talk
Channel Separation f=1 kHz, V
Slew Rate V
(Note 3)
I
total
Total Quiescent Power Both Amplifiers V
(Note 2) Supply Current V
V
OS
(Note 2)
I
B
I
OS
I
O
V
OD
Input Offset Voltage V
Input Bias Current V
Input Offset Current V
Output Current Limit |VCC|=|VEE|=10V, t
Output Dropout Voltage |VCC–VO|, V
(Note 2) (Note 12) |V
PSRR Power Supply Rejection Ratio V
(Note 2) V
CMRR Common Mode Rejection Ratio V
(Note 2) V
A
VOL
(Note 2)
Open Loop Voltage Gain R
=
EE
−28V with R
=
8Ω unless otherwise specified. Limits apply for T
L
Typical Limit
(Limits)
(Note 9) (Note 10)
|V
|=|VEE|=28V, R
CC
|V
|=|VEE|=20V, R
CC
=
8Ω 0.08
L
=
4Ω,|V
L
20 Hz ≤ f ≤ 20 kHz, A
=
O
=
1.414 Vrms, t
IN
=
=
0V, I
O
0mA
O
=
8Ω 30 25 W/ch (min)
L
=
4Ω 22 15 W/ch (min)
L
|=|VEE|=20V 0.1
CC
=
26 dB
V
10.9 Vrms 80 dB
=
2 ns 18 12 V/µs (min)
rise
=
0V,
CM
Standby: Off 50 80 mA (max)
Standby: On 6.5 8 mA (max)
=
=
0V, I
CM
CM
CM
V
O
CC
CM
V
CC
V
CM
CC
CM
L
O–VEE
=
=
=
0V
=
=
=
=
=
=
=
2kΩ,∆V
0 mA 2.0 15 mV (max)
O
=
0V, I
0 mA 0.2 0.5 µA (max)
O
=
0V, I
0 mA 0.002 0.2 µA (max)
O
=
CC
=
|, V
EE
30V to 10V, V
=
0V, I
O
30V, V
EE
=
0V, I
O
35V to 10V, V
10V to −10V, I
O
=
10 ms, 3.5 2.9 Apk (min)
ON
=
20V, I
−20V, I
+100 mA 1.8 2.3 V (max)
O
=
−100 mA 2.5 3.2 V (max)
O
=
−30V, 115 85 dB (min)
EE
0mA
=
−30V to −10V 110 85 dB (min)
0mA
=
−10V to −35V, 110 80 dB (min)
EE
=
0mA
O
=
30V 110 90 dB (min)
=
A
%
%
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Electrical Characteristics (Notes 4, 5) (Continued)
The following specifications apply for V
25˚C.
CC
=
+28V, V
Symbol Parameter Conditions LM4765 Units
GBWP Gain Bandwidth Product f
e
IN
Input Noise IHF— A Weighting Filter 2.0 8 µV (max)
(Note 3) R
SNR Signal-to-Noise Ratio P
A
M
Mute Attenuation Pin 6,11 at 2.5V 115 80 dB (min)
Standby
Pin
V
V
Standby Low Input Voltage Not in Standby Mode 0.8 V (max)
IL
Standby High Input Voltage In Standby Mode 2.0 2.5 V (min)
IH
Mute pin
V
V
Note 1: Operation is guaranteed up to 64V,however,distortion may be introduced from SPiKe Protection Circuitry if proper thermal considerations are not taken into
account. Refer to the Application Information section for a complete explanation.
Note 2: DC Electrical Test; Refer to Test Circuit
Note 3: AC Electrical Test; Refer to Test Circuit
Note 4: All voltages are measured with respect to the GND pins (5, 10), unless otherwise specified.
Note 5: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is func-
tional, but do not guarantee specific performance limits. Electrical Characteristics state DC andAC electrical specifications under particular test conditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Note 6: For operating at case temperatures above 25˚C, the device must be derated based on a 150˚C maximum junction temperature and a thermal resistance of
θ
JC
Note 7: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 8: The operating junction temperature maximum is 150˚C, however, the instantaneous Safe Operating Area temperature is 250˚C.
Note 9: Typicals are measured at 25˚C and represent the parametric norm.
Note 10: Limits are guarantees that all parts are tested in production to meet the stated values.
Note 11: V
ferential between V
Note 12: The output dropout voltage, V
formance Characteristics section.
Mute Low Input Voltage Outputs Not Muted 0.8 V (max)
IL
Mute High Input Voltage Outputs Muted 2.0 2.5 V (min)
IH
#
1.
#
2.
=
1˚C/W for the T package. Refer to the section Determining the Correct Heat Sink in the Application Information section.
must have at least −9V at its pin with reference to ground in order for the under-voltage protection circuitry to be disabled. In addition, the voltage dif-
EE
and VEEmust be greater than 14V.
CC
, is the supply voltage minus the clipping voltage. Refer to the Clipping Voltage vs. Supply Voltage graph in the Typical Per-
OD
=
EE
−28V with R
=
8Ω unless otherwise specified. Limits apply for T
L
Typical Limit
(Note 9) (Note 10)
=
100 kHz, V
O
=
600Ω (Input Referred)
IN
=
1W, A — Weighted, 98 dB
O
Measured at 1 kHz, R
=
P
25W, A — Weighted 108 dB
O
Measured at 1 kHz, R
=
50 mVrms 7.5 5 MHz (min)
IN
=
25Ω
S
=
25Ω
S
(Limits)
=
A
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Test Circuit#1 (Note 2) (DC Electrical Test Circuit)
Test Circuit#2 (Note 3) (AC Electrical Test Circuit)
DS100927-3
www.national.com 4
DS100927-4
Bridged Amplifier Application Circuit
FIGURE 2. Bridged Amplifier Application Circuit
Single Supply Application Circuit
DS100927-5
FIGURE 3. Single Supply Amplifier Application Circuit
Note:*Optional components dependent upon specific design requirements.
DS100927-6
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