NSC LM4700T, LM4700MWC, LM4700DWF Datasheet
LM4700
Overture
™
Audio Power Amplifier Series
30W Audio Power Amplifier with
Mute and Standby Modes
General Description
The LM4700 is an audio power amplifier capable of delivering typically30W of continuous average output power into an
8Ω load with less than 0.1%(THD + N).
The LM4700 has an independent smooth transition fade-in/
out mute and a power conserving standby mode which can
be controlled by external logic.
The performance of the LM4700, utilizing its Self Peak Instantaneous Temperature (˚Ke) (SPiKe
™
) Protection Circuitry, places it in a class above discrete and hybrid amplifiers by providing an inherently, dynamically protected Safe
Operating Area (SOA). SPiKe Protection means that these
parts arecompletely safeguarded at the output against overvoltage, undervoltage, overloads, including thermal runaway
and instantaneous temperature peaks.
Key Specifications
n THD+N at 1 kHz at continuous average output power of
25W into 8Ω: 0.1%(max)
n THD+N from 20 Hz to 20 kHz at 30W of continuous
average output power into 8Ω: 0.08%(typ)
n Standby current: 2.1 mA (typ)
Features
n SPiKe Protection
n Minimal amount of external components necessary
n Quiet fade-in/out mute function
n Power conserving standby-mode
n Isolated 11-lead TO-220 package
Applications
n Component stereo
n Compact stereo
Typical Application Connection Diagram
SPiKe™Protection and Overture™are trademarks of National Semiconductor Corporation.
DS012369-1
*
Optional components dependent upon specific design requirements. Refer
to the External Components Description section for a component functional
description.
FIGURE 1. Typical Audio Amplifier Application Circuit
Isolated Plastic Package
DS012369-2
Top View
Order Number LM4700TF
See NS Package Number TF11B
March 1998
LM4700
Overture
Audio Power Amplifier Series
30W Audio Power Amplifier with Mute and Standby Modes
© 1999 National Semiconductor Corporation DS012369 www.national.com
Absolute Maximum Ratings (Notes 4, 5)
If Military/Aerospace specified devices are required,
please contact the NationalSemiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage |V
CC
|+|VEE|
(No Signal) 66V
Supply Voltage |V
CC
|+|VEE|
(with Input and Load) 64V
Common Mode Input Voltage (V
CC
or VEE) and
|V
CC
|+|VEE| ≤ 60V
Differential Input Voltage 60V
Output Current Internally Limited
Power Dissipation (Note 6) 62.5W
ESD Susceptibility (Note 7) 2000V
Junction Temperature (Note 8) 150˚C
Thermal Resistance
θ
JC
(Note 14) 2˚C/W
θ
JA
43˚C/W
Soldering Information
TF Package (10 sec.) 260˚C
Storage Temperature −40˚C ≤ T
A
≤ +150˚C
Operating Ratings (Notes 4, 5)
Temperature Range
T
MIN
≤ TA≤ T
MAX
−20˚C ≤ TA≤ +85˚C
Supply Voltage |V
CC
|+|VEE| (Note 1) 20V to 64V
Electrical Characteristics
(Notes 4, 5) The following specifications are for V
CC
=
+28V, V
EE
=
−28V with R
L
=
8Ω, unless otherwise specified. Limits ap-
ply for T
A
=
25˚C.
Symbol Parameter Conditions LM4700 Units
(Limits)
Typical Limit
(Note 9) (Note
10)
|V
CC
|+|VEE| Power Supply Voltage GND − VEE≥ 9V 18 20 V (min)
(Note 11) 64 V (max)
P
O
Output Power THD + N=0.1%(max), f=1 kHz
(Note 3) (Continuous Average) R
L
=
8Ω,|V
CC
|=|VEE|=28V 30 25 W/ch
(min)
R
L
=
4Ω,|V
CC
|=|VEE|=20V (Note 13) 22 15 W/ch
(min)
THD + N Total Harmonic Distortion 30W/ch, R
L
=
8Ω, 0.08
%
Plus Noise 20 Hz ≤ f ≤ 20 kHz, A
V
=
26 dB
SR (Note 3) Slew Rate V
IN
=
1.414 Vrms, t
rise
=
2 ns 18 12 V/µs (min)
I
TOTAL
Total Quiescent Power V
CM
=
0V, V
O
=
0V, I
O
=
0mA
(Note 2) Supply Current Standby: Off 25 40 mA (max)
Standby: On 2.1 mA
Standby Pin
V
IL
Standby Low Input Voltage Not in Standby Mode 0.8 V (max)
V
IH
Standby High Input Voltage In Standby Mode 2.0 2.5 V (min)
Mute Pin
V
IL
Mute Low Input Voltage Output Not Muted 0.8 V (max)
V
IH
Mute High Input Voltage Output Muted 2.0 2.5 V (min)
A
M
Mute Attenuation V
PIN8
=
2.5V 115 80 dB (min)
V
OS
(Note 2) Input Offset Voltage V
CM
=
0V, I
O
=
0 mA 2.0 15 mV (max)
I
B
Input Bias Current V
CM
=
0V, I
O
=
0 mA 0.2 0.5 µA (max)
I
OS
Input Offset Current V
CM
=
0V, I
O
=
0 mA 0.002 0.2 µA (max)
I
O
Output Current Limit |VCC|=|VEE|=10V, t
ON
=
10 ms, 3.5 2.9 A
PK
(min)
V
O
=
0V
V
OD
Output Dropout Voltage |VCC−VO|, V
CC
=
20V, I
O
=
+100 mA 1.8 2.3 V (max)
(Note 2) (Note 12) |V
O−VEE
|, V
EE
=
−20V, I
O
=
−100 mA 2.5 3.2 V (max)
PSRR Power Supply Rejection Ratio V
CC
=
30V to 10V, V
EE
=
−30V, 115 85 dB (min)
(Note 2) V
CM
=
0V, I
O
=
0mA
V
CC
=
30V, V
EE
=
−30V to −10V 110 85 dB (min)
V
CM
=
0V, I
O
=
0mA
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Electrical Characteristics (Continued)
(Notes 4, 5) The following specifications are for V
CC
=
+28V, V
EE
=
−28V with R
L
=
8Ω, unless otherwise specified. Limits ap-
ply for T
A
=
25˚C.
Symbol Parameter Conditions LM4700 Units
(Limits)
Typical Limit
(Note 9) (Note
10)
CMRR Common Mode Rejection Ratio V
CC
=
35V to 10V, V
EE
=
−10V to −35V, 110 80 dB (min)
(Note 2) V
CM
=
10V to −10V, I
O
=
0mA
A
VOL
(Note 2) Open Loop Voltage Gain R
L
=
2kΩ,∆V
O
=
30V 110 90 dB (min)
GBWP Gain-Bandwidth Product f
O
=
100 kHz, V
IN
=
50 mVrms 7.5 5 MHz (min)
e
IN
Input Noise IHF—A Weighting Filter 2.0 8 µV (max)
(Note 3) R
IN
=
600Ω (Input Referred)
SNR Signal-to-Noise Ratio P
O
=
1W, A-Weighted, 98 dB
Measured at 1 kHz, R
S
=
25Ω
P
O
=
25W, A-Weighted 108 dB
Measured at 1 kHz, R
S
=
25Ω
Note 1: Operation isguaranteed up to 64V, however, distortion may beintroduced from SPiKe ProtectionCircuitry if proper thermalconsiderations are not takeninto
account. Refer to the Application Information section for a complete explanation.
Note 2: DC Electrical Test; Refer to Test Circuit
#
1.
Note 3: AC Electrical Test; Refer to Test Circuit
#
2.
Note 4: All voltages are measured with respect to the GND (pin 7), unless otherwise specified.
Note 5: Absolute MaximumRatings indicate limits beyond whichdamage to the device mayoccur.OperatingRatings indicate conditions forwhich the device is func-
tional, but do not guaranteespecificperformance limits. Electrical Characteristics stateDCandAC electrical specifications under particular testconditions which guarantee specific performance limits. This assumes that the device is within the Operating Ratings. Specifications are not guaranteed for parameters where no limit is
given, however, the typical value is a good indication of device performance.
Note 6: For operating at case temperatures above 25˚C, the device must be derated based on a 150˚C maximum junction temperature and a thermal resistance of
θ
JC
=
2˚C/W (junction to case). Refer to the section, Determining the Correct Heat Sink, in the Application Information section.
Note 7: Human body model, 100 pF discharged through a 1.5 kΩ resistor.
Note 8: The operating junction temperature maximum is 150˚C, however, the instantaneous Safe Operating Area temperature is 250˚C.
Note 9: Typicals are measured at 25˚C and represent the parametric norm.
Note 10: Limits are guarantees that all parts are tested in production to meet the stated values.
Note 11: V
EE
must have at least −9V at its pin with reference to ground in order for the under-voltage protection circuitry to be disabled. In addition, the voltage dif-
ferential between V
CC
and VEEmust be greater than 14V.
Note 12: The outputdropout voltage, V
OD
, is the supplyvoltage minus the clipping voltage.Refer to the ClippingVoltagevs. Supply Voltage graph in theTypicalPer-
formance Characteristics section.
Note 13: Fora4Ωload, and with
±
20V supplies, theLM4700 can delivertypically 22 Wattsof continuous average power per channel with less than 0.1%(THD+N).
With supplies above
±
20V,the LM4700 cannotdeliver more than 22 watts into 4Ω due to current limiting of the outputtransistors. Thus, increasingthe power supply
above
±
20V will only increase the internal power dissipation, not the possible output power. Increased power dissipation will require a larger heat sink as explained
in theApplication Information section.
Note 14: Preliminary engineering evaluation of θ
JC
for the TF package has been assessed as 2˚C/W.This is a preliminary engineering number and represents the
data to this point. Please contact your local National Semiconductor sales representative for more information.
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Test Circuit#1 (Note 2) (DC Electrical Test Circuit)
Test Circuit#2 (Note 3) (AC Electrical Test Circuit)
Bridged Amplifier Application Circuit
DS012369-3
DS012369-4
DS012369-5
FIGURE 2. Bridged Amplifier Application Circuit
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Single Supply Application Circuit
Auxillary Amplifier Application Circuit
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FIGURE 3. Single Supply Amplifier Application Circuit
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FIGURE 4. Auxillary Amplifier Application Circuit
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