NSC LM395P, LM395K Datasheet

LM195/LM395
Ultra Reliable Power Transistors

LM195/LM395 Ultra Reliable Power Transistors

July 2000

General Description

The LM195/LM395 are fast, monolithic power integrated cir­cuits with complete overload protection. These devices,
which act as high gain power transistors, have included on
the chip, current limiting, power limiting, and thermal over­load protection making them virtually impossible to destroy
from any type of overload. In the standard TO-3 transistor
power package, the LM195 will deliver load currents in ex­cess of 1.0A and can switch 40V in 500 ns.

The inclusion of thermal limiting, a feature not easily avail­able in discrete designs, provides virtually absolute protec­tion against overload. Excessive power dissipation or inad­equate heat sinking causes the thermal limiting circuitry to
turn off the device preventing excessive heating.

The LM195 offers a significant increase in reliability as well
as simplifying power circuitry. In some applications, where
protection is unusuallydifficult, such as switching regulators,
lamp or solenoid drivers where normal power dissipation is
low, the LM195 is especially advantageous.

The LM195 is easy to use and only a few precautions need
be observed. Excessive collector to emitter voltage can de­stroy the LM195 as with any power transistor. When the de­vice is used as an emitter follower with low source imped-

Simplified Circuit

ance, it is necessary to insert a 5.0k resistor in series with
the base lead to prevent possible emitter follower oscilla­tions. Although the device is usually stable as an emitter fol­lower,the resistor eliminates the possibility of trouble without
degrading performance. Finally, since it has good high fre­quency response, supply bypassing is recommended.

For low-power applications (under 100 mA), refer to the
LP395 Ultra Reliable Power Transistor.

The LM195/LM395 are available in the standard TO-3, Kovar
TO-5, and TO-220 packages. The LM195 is rated for opera­tion from −55˚C to +150˚C and the LM395 from 0˚C to
+125˚C.

Features

n Internal thermal limiting
n Greater than 1.0A output current
n 3.0 µA typical base current
n 500 ns switching time
n 2.0V saturation
n Base can be driven up to 40V without damage
n Directly interfaces with CMOS or TTL
n 100% electrical burn-in

1.0 Amp Lamp Flasher

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© 2000 National Semiconductor Corporation DS006009 www.national.com

Connection Diagrams

LM195/LM395

TO-3 Metal Can Package

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Bottom View

Order Number LM195K/883

See NS Package Number K02A

(Note 5)

TO-220 Plastic Package

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Case is Emitter

Top View

Order Number LM395T

See NS Package Number T03B

TO-5 Metal Can Package

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Bottom View

Order Number LM195H/883

See NS Package Number H03B

(Note 5)

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LM195/LM395

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Collector to Emitter Voltage

LM195 42V
LM395 36V

Collector to Base Voltage

LM195 42V

Base to Emitter Voltage (Reverse) 20V
Collector Current Internally Limited
Power Dissipation Internally Limited
Operating Temperature Range

LM195 −55˚C to +150˚C

LM395 0˚C to +125˚C
Storage Temperature Range −65˚C to +150˚C
Lead Temperature

(Soldering, 10 sec.) 260˚C

LM395 36V

Base to Emitter Voltage (Forward)

LM195
LM395

42V
36V

Preconditioning

100% Burn-In In Thermal Limit

Electrical Characteristics

(Note 2)

Parameter Conditions LM195 LM395 Units

Min Typ Max Min Typ Max

Collector-Emitter Operating Voltage I
(Note 4)
Base to Emitter Breakdown Voltage 0 ≤ V
Collector Current

TO-3, TO-220 V

TO-5 V
Saturation Voltage I
Base Current 0 ≤ I

Quiescent Current (IQ)V

Base to Emitter Voltage IC= 1.0A, TA= +25˚C 0.9 0.9 V
Switching Time V

Thermal Resistance Junction to TO-3 Package (K) 2.3 3.0 2.3 3.0 ˚C/W
Case (Note 3) TO-5 Package (H) 12 15 12 15 ˚C/W

Note 1: “Absolute Maximum Ratings” indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is
functional, but do not guarantee specific performance limits.

Note 2: Unless otherwise specified, these specifications apply for −55˚C ≤ T
Note 3: Without a heat sink, the thermal resistance of the TO-5 package is about +150˚C/W, while that of the TO-3 package is +35˚C/W.
Note 4: Selected devices with higher breakdown available.
Note 5: Refer to RETS195H and RETS195K drawings of military LM195H and LM195K versions for specifications.

≤ IC≤ I

Q

CE
CE

C

0 ≤ V

be

0 ≤ V

CE

T

A

MAX

≤ V

CE

CEMAX

42 36 60 V

≤ 15V 1.2 2.2 1.0 2.2 A
≤ 7.0V 1.2 1.8 1.0 1.8 A

≤ 1.0A, TA= 25˚C 1.8 2.0 1.8 2.2 V

≤ I

C

MAX

≤ V

CE

CEMAX

=0

≤ V

CE

CEMAX

= 36V, RL=36Ω,

= 25˚C

3.0 5.0 3.0 10 µA

2.0 5.0 2.0 10 mA

500 500 ns

42 36 V

TO-220 Package (T) 4 6 ˚C/W

≤ +150˚C for the LM195 and 0˚C ≤ +125˚C for the LM395.

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Typical Performance Characteristics (for K and T Packages)

Collector Characteristics

LM195/LM395

Quiescent Current

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Short Circuit Current

Base Emitter Voltage

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Bias Current

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Base Current

Saturation Voltage

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Response Time

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Response Time

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