NSC LM3403N, LM3403M, LM3303N, LM3403J Datasheet

LM3303/LM3403
Quad Operational Amplifiers

General Description

The LM3303 and LM3403 are monolithic quad operational
amplifiers consisting of four independent high gain, internal­ly frequency compensated, operational amplifiers designed
to operate from a single power supply or dual power sup­plies over a wide range of voltages. The common mode
input range includes the negative supply, thereby eliminat­ing the necessity for external biasing components in many
applications.

Features

Y

Input common mode voltage range includes ground or
negative supply

Y

Output voltage can swing to ground or negative supply

February 1995

Y

Four internally compensated operational amplifiers in a
single package

Y

Wide power supply range single supply of 3.0V to 36V
dual supply of

Y

Class AB output stage for minimal crossover distortion

Y

Short circuit protected outputs

Y

High open loop gain 200k

Y

LM741 operational amplifier type performance

g

1.5V tog18V

Applications

Y

Filters

Y

Voltage controlled oscillators

LM3303/LM3403 Quad Operational Amplifiers

Connection Diagram

14-Lead DIP and SO-14 Package

Top View

Equivalent Circuit ((/4 of Circuit)

TL/H/10064– 1

Order Information

Device Package Package

Code Code Description

LM3303J J14A Ceramic DIP
LM3303N N14A Molded DIP

LM3303M M14A Molded Surface Mount
LM3403J J14A Ceramic DIP
LM3403N N14A Molded DIP
LM3403M M14A Molded Surface Mount

TL/H/10064– 2

C

1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.

TL/H/10064

Absolute Maximum Ratings

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.

Storage Temperature Range

Ceramic DIP
Molded DIP and SO-14

Operating Temperature Range

Industrial (LM3303)
Commercial (LM3403) 0

b

65§Ctoa175§C

b

65§Ctoa150§C

b

40§Ctoa85§C

Ctoa70§C

§

Lead Temperature

Ceramic DIP (Soldering, 60 sec.) 300
Molded DIP and SO-14
(Soldering, 10 sec.) 265

C

§

C

§

LM3303 and LM3403
Electrical Characteristics

e

T

25§C, V

A

Symbol Parameter Conditions

V

I

IO

I

IB

Z

I

CC

CMR Common Mode Rejection R

V

Input Offset Voltage 2.0 8.0 2.0 8.0 mV

IO

Input Offset Current 30 75 30 50 nA

Input Bias Current 200 500 200 500 nA

Input Impedance 0.3 1.0 0.3 1.0 MX

I

Supply Current V

Input Voltage Range

IR

e

O

s

S

PSRR Power Supply

Rejection Ratio

I

OS

A

V

TR Transient Rise Time/ V

BW Bandwidth V

SR Slew Rate V

Output Short Circuit Current
(Per Amplifier) (Note 4)

Large Signal Voltage Gain V

VS

Output Voltage Swing R

OP

Response Fall Time A

Overshoot V

R

R

A

A

A

O

t

L

e

L

e

L

O

e

V

O

e

V

O

e

V

eb

I

e

V

e

e

e

e

e

CC

e %

0V, R

L

10 kX 70 90 70 90 dB

g

10V,

2.0 kX

10 kX

2.0 kX

50 mV,

e

1.0, R

L

50 mV,

e

1.0, R

L

50 mV,

e

1.0, R

L

10V toa10V,

1.0

Internal Power Dissipation (Notes 1, 2)

14L-Ceramic DIP 1.36W
14L-Molded DIP 1.04W
SO-14 0.93W

a

Supply Voltage between V

and V

b

Differential Input Voltage (Note 3)

Input Voltage (Vb)b0.3V to V

ESD Tolerance (To Be Determined)

g

15V, unless otherwise specified

LM3303 LM3403

Min Typ Max Min Typ Max

2.8 7.0 2.8 7.0 mA

a

12Va12.5V

b

to V

to V

b

a

13Va13.5V

to Vbto V

b

30 150 30 150 mV/V

g

10

g

30g45g10

g

30g45 mA

20 200 20 200 V/mV

10 kX

10 kX

10 kX

g

12 12.5

g

10 12

0.3 0.3 ms

5.0 5.0 %

1.0 1.0 MHz

g

12a13.5

g

10

g

13

0.6 0.6 V/ms

g

36V

30V

a

Units

V

V

2

LM3303 and LM3403 (Continued)

e

Electrical Characteristics T

A

25§C, V

The following specifications apply forb40§CsT

Symbol Parameter Conditions

V

IO

Input Offset Voltage 10 10 mV

DVIO/DT Input Offset Voltage

Temperature Sensitivity

I

IO

Input Offset Current 250 200 nA

DIIO/DT Input Offset Current

Temperature Sensitivity

I

IB

A

VS

V

OP

Input Bias Current 1000 800 nA

Large Signal Voltage Gain V

Output Voltage Swing R

e

g

15V, unless otherwise specified

CC

s

a

85§C for the LM3303, and 0§CsT

A

e

O

t

R

L

e

L

g

10V,

2.0 kX

2.0 kX

LM3303 and LM3403
Electrical Characteristics

Symbol Parameter Conditions

V

IO

I

IO

I

IB

I

CC

PSRR Power Supply

A

VS

V

OP

CS Channel Separation 1.0 Hzsfs20 kHz

Note 1: T

Note 2: Ratings apply to ambient temperature at 25

the SO-14 at 7.5 mW/

Note 3: For supply voltage less than 30V between V

Note 4: Not to exceed maximum package power dissipation.

Note 5: Output will swing to ground.

Input Offset Voltage 8.0 2.0 8.0 mV

Input Offset Current 75 30 50 nA

Input Bias Current 500 200 500 nA

Supply Current 2.5 7.0 2.5 7.0 mA

Rejection Ratio

Large Signal Voltage Gain R

Output Voltage Swing R
(Note 5)

e

150§C for the Molded DIP and SO-14, and 175§C for the Ceramic DIP.

J Max

C.

§

e

T

25§C, Vae5.0V, VbeGND, unless otherwise specified

A

t

2.0 kX 20 200 20 200 V/mV

L

e

10 kX 3.3 3.3

L

s

a

5.0VsV

e

R

L

30V, (Va)(V

10 kX

(Input Referenced)

C. Above this temperature, derate the 14L-Ceramic DIP at 9.1 mW/§C, the 14L-Molded DIP at 8.3 mW/§C, and

§

a

and Vb, the absolute maximum input voltage is equal to the supply voltage.

s

a

70§C for the LM3403

A

LM3303 LM3403

Units

Min Typ Max Min Typ Max

10 10 mV/

50 50 pA/

15 15 V/mV

g

10

LM3303 LM3403

g

10 V

Units

Min Typ Max Min Typ Max

150 150 mV/V

a

b

2.0

b

120

)

b

2.0

b

120 dB

C

§

C

§

V

3