NSC LM1596H, LM1496H, LM1496M Datasheet

LM1596/LM1496 Balanced Modulator-Demodulator
LM1596/LM1496 Balanced Modulator-Demodulator
February 1995
General Description
The LM1596/LM1496 are doubled balanced modulator-de­modulators which produce an output voltage proportional to the product of an input (signal) voltage and a switching (car­rier) signal. Typical applications include suppressed carrier modulation, amplitude modulation, synchronous detection, FM or PM detection, broadband frequency doubling and chopping.
The LM1596 is specified for operation over the
a
125§C military temperature range. The LM1496 is speci-
fied for operation over the 0
Ctoa70§C temperature range.
§
b
55§Cto
Schematic and Connection Diagrams
Features
Y
Excellent carrier suppression
65 dB typical at 0.5 MHz 50 dB typical at 10 MHz
Y
Adjustable gain and signal handling
Y
Fully balanced inputs and outputs
Y
Low offset and drift
Y
Wide frequency response up to 100 MHz
Metal Can Package
Note: Pin 10 is connected electrically to the
case through the device substrate.
Order Number LM1496H or LM1596H
See NS Package Number H08C
Top View
TL/H/7887– 2
Numbers in parentheses show DIP connections.
TL/H/7887– 1
Dual-In-Line and Small Outline Packages
TL/H/7887– 3
Order Number LM1496M or LM1496N
See NS Package Number M14A or N14A
C
1995 National Semiconductor Corporation RRD-B30M115/Printed in U. S. A.
TL/H/7887
Absolute Maximum Ratings
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Internal Power Dissipation (Note 1) 500 mW
Differential Input Signal (V
Differential Input Signal (V
b
Input Signal (V
V1,V
2
b
V8)
7
b
V1)
4
b
V4) 5.0V
3
g
(5aI5R0)V
g
5.0V
Bias Current (I5)12mA
Operating Temperature Range LM1596b55§Ctoa125§C
LM1496 0
Storage Temperature Range
Ctoa70§C
§
b
65§Ctoa150§C
Soldering Information
Dual-In-Line Package
#
Soldering (10 seconds) 260§C
Small Outline Package
#
Vapor Phase (60 seconds) 215§C
Infrared (15 seconds) 220§C
See AN-450 ‘‘Surface Mounting Methods and their effects on Product Reliability’’ for other methods of soldering sur­face mount devices.
Electrical Characteristics (T
Parameter Conditions
Carrier Feedthrough V
Carrier Suppression f
Transadmittance Bandwidth R
Voltage Gain, Signal Channel V
Input Resistance, Signal Port fe5.0 MHz
Input Capacitance, Signal Port fe5.0 MHz
e
C
e
f
C
e
V
C
e
f
C
e
V
C
e
f
C
e
V
C
e
f
C
e
S
e
f
C
e
f
S
e
f
C
e
L
Carrier Input Port, V
e
f
S
Signal Input Port, V
b
V
7
e
S
b
V
7
b
V
7
b
V
7
e
25§C, unless otherwise specified, see test circuit)
A
LM1596 LM1496
Min Typ Max Min Typ Max
Units
60 mVrms sine wave 40 40 mVrms
1.0 kHz, offset adjusted 60 mVrms sine wave 140 140 mVrms
10 kHz, offset adjusted
300 mVppsquare wave 0.04 0.2 0.04 0.2 mVrms
1.0 kHz, offset adjusted 300 mVppsquare wave 20 100 20 150 mVrms
1.0 kHz, not offset adjusted
10 kHz, 300 mVrms 50 65 50 65 dB 500 kHz, 60 mVrms sine wave offset adjusted 10 kHz, 300 mVrms 50 50 dB 10 MHz, 60 mVrms sine wave offset adjusted
50X 300 300 MHz
e
60 mVrms sine wave
0.5Vdc
0.5 Vdc
0.5 Vdc
0.5 Vdc
C
e
300 mVrms sine wave 80 80 MHz
S
2.5 3.5 2.5 3.5 V/V
200 200 kX
2.0 2.0 pF
1.0 kHz, 300 mVrms sine wave
e
V
8
100 mVrms, fe1.0 kHz
e
V
8
e
V
8
e
V
8
Single Ended Output Resistance fe10 MHz 40 40 kX
Single Ended Output fe10 MHz Capacitance
Input Bias Current (I
Input Bias Current (I
Input Offset Current (I
Input Offset Current (I
a
I4)/2 12 25 12 30 mA
1
a
I8)/2 12 25 12 30 mA
7
b
I4) 0.7 5.0 0.7 5.0 mA
1
b
I8) 0.7 5.0 5.0 5.0 mA
7
Average Temperature (b55§CkT Coefficient of Input (0 Offset Current
Output Offset Current (I
CkT
§
A
b
I9) 1450 1460 mA
6
Average Temperature (b55§CkT Coefficient of Output (0 Offset Current
CkT
§
A
k
a
125§C) 2.0 nA/§C
A
k
a
70§C) 2.0 nA/§C
k
a
125§C) 90 nA/§C
A
k
a
70§C) 90 nA/§C
5.0 5.0 pF
2
Electrical Characteristics (T
Parameter Conditions
Signal Port Common Mode f Input Voltage Range
Signal Port Common Mode V Rejection Ratio
Common Mode Quiescent Output Voltage
Differential Output Swing Capability
Positive Supply Current (I
e
S
b
7
a
6
e
25§C, unless otherwise specified, see test circuit) (Continued)
A
1.0 kHz
e
V
8
0.5 Vdc
LM1596 LM1496
Min Typ Max Min Typ Max
5.0 5.0 V
b
85
b
85 dB
Units
8.0 8.0 Vdc
8.0 8.0 V
Ig) 2.0 3.0 2.0 3.0 mA
p-p
p-p
Negative Supply Current (I10) 3.0 4.0 3.0 4.0 mA
Power Dissipation 33 33 mW
Note 1: LM1596 rating applies to case temperatures toa125§C; derate linearly at 6.5 mW/§C for ambient temperature above 75§C. LM1496 rating applies to case temperatures to
Note 2: Voltage applied between pins 6-7, 8-1, 9-7, 9-8, 7-4, 7-1, 8-4, 6-8, 2-5, 3-5.
Note 3: Refer to rets1596x drawing for specifications of military LM1596H versions.
a
70§C.
Typical Performance Characteristics
Carrier Suppression vs Carrier Input Level
Sideband Output vs Carrier Levels
Carrier Suppression vs Frequency
Sideband and Signal Port Transadmittances vs Frequency
Carrier Feedthrough vs Frequency
Signal-Port Frequency Response
TL/H/7887– 5
3
Loading...
+ 5 hidden pages