NSC DS36C200MX, DS36C200M Datasheet

DS36C200
Dual High Speed Bi-Directional Differential Transceiver

General Description

The DS36C200 is a dual transceiver device optimized for
high data rate and low power applications. This device pro­vides a single chip solution for a dual high speed
bi-directional interface.Also,both control pins may be routed
together for single bit control of datastreams. Both control
pins are adjacent to each other for ease of routing them to­gether. The DS36C200 is compatible with IEEE 1394 physi­cal layer and may be used as an economical solution with
some considerations. Please reference the application infor­mation on 1394 for more information. The device is in a
14-lead small outline package. The differential driver outputs
provides low EMI with its low output swings typically 210 mV.
The receiver offers

±

100 mV threshold sensitivity, in addition

to common-mode noise protection.

Features

n Optimized for DSS to DVHS interface link
n Compatible IEEE 1394 signaling voltage levels
n Operates above 100 Mbps
n Bi-directional transceivers
n 14-lead SOIC package
n Ultra low power dissipation

n

±

100 mV receiver sensitivity

n Low differential output swing typical 210 mV
n High impedance during power off

Connection Diagram Functional Diagram

TRI-STATE®is a registered trademark of National Semiconductor Corporation.

DS012621-1

Note:*denotes active LOW pin

Order Number DS36C200M

See NS Package Number M14A

DS012621-2

June 1998

DS36C200 Dual High Speed Bi-Directional Differential Transceiver

© 1998 National Semiconductor Corporation DS012621 www.national.com

Absolute Maximum Ratings (Note 1)

If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.

Supply Voltage (V

CC

) −0.3V to +6V

Enable Input Voltage

(DE, RE

*

) −0.3V to (VCC+ 0.3V)
Voltage (DI/RO) −0.3V to +5.9V
Voltage (DO/RI

±

) −0.3V to +5.9V

Maximum Package Power Dissipation

@

+25˚C

M Package 1255 mW
Derate M Package 10.04 mW/˚C above +25˚C
Storage Temperature Range −65˚C to +150˚C
Lead Temperature Range

(Soldering, 4 sec.) +260˚C

ESD Rating (Note 4)

(HBM, 1.5 kΩ, 100 pF) ≥ 3.5 kV
(EIAJ, 0 Ω, 200 pF) ≥ 300V

Recommended Operating
Conditions

Min Typ Max Units

Supply Voltage (V

CC

) +4.5 +5.0 +5.5 V
Receiver Input Voltage 0 2.4 V
Operating Free Air
Temperature (T

A

) 0 25 70 ˚C

Electrical Characteristics (Notes 2, 3, 7)

Over supply voltage and operating temperature ranges, unless otherwise specified

Symbol Parameter Conditions Pin Min Typ Max Units
DIFFERENTIAL DRIVER CHARACTERISTICS (RE

*

=

V

CC

)

V

OD

Output Differential Voltage R

L

=

55Ω,(

Figure 1

) DO+,

DO−

172 210 285 mV

∆V

OD

VODMagnitude Change 0 4 35 mV

V

OH

Output High Voltage 1.36 V

V

OL

Output Low Voltage 1.15 V

V

OS

Offset Voltage 1.0 1.25 1.6 V

∆V

OS

Offset Magnitude Change 0 5 25 mV

I

OZD

TRI-STATE®Leakage V

OUT

=

V

CC

or GND −10

±

1 +10 µA

I

OXD

Power-Off Leakage V

OUT

=

5.5V or GND, V

CC

=

0V −10

±

1 +10 µA

I

OSD

Output Short Circuit Current V

OUT

=

0V −4 −9 mA

DIFFERENTIAL RECEIVER CHARACTERISTICS (DE=GND)

V

TH

Input Threshold High V

CM

=

0V to 2.3V RI+,

RI−

+100 mV

V

TL

Input Threshold Low −100 mV

I

IN

Input Current V

IN

=

+2.4V or 0V −10

±

1 +10 µA

V

OH

Output High Voltage I

OH

=

−400 µA RO 3.8 4.9 V
Inputs Open 3.8 4.9 V
Inputs Terminated, R

t

=

55Ω 3.8 4.9 V

Inputs Shorted, V

ID

=

0V 4.9 V

V

OL

Output Low Voltage I

OL

=

2.0 mA, V

ID

=

−200 mV 0.1 0.4 V

I

OSR

Output Short Circuit Current V

OUT

=

0V −15 −60 −100 mA

DEVICE CHARACTERISTICS

V

IH

Input High Voltage DI,

DE

RE

*

2.0 V

CC

V

V

IL

Input Low Voltage GND 0.8 V

I

IH

Input High Current V

IN

=

V

CC

or 2.4V

±

1

±

10 µA

I

IL

Input Low Current V

IN

=

GND or 0.4V

±

1

±

10 µA

V

CL

Input Clamp Voltage I

CL

=

−18 mA −1.5 −0.8 V

I

CCD

Power Supply Current No Load, DE=RE

*

=

V

CC

V

CC

37mA

R

L

=

55Ω,DE=RE

*

=

V

CC

11 17 mA

I

CCR

DE=RE

*

=

0V 6 10 mA

Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices
should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.

Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except V

OD

and VID.

Note 3: All typicals are given for V

CC

=

+5.0V and T

A

=

+25˚C.

Note 4: ESD Rating: HBM (1.5 kΩ, 100 pF) ≥ 3.5 kV

EIAJ (0Ω, 200 pF) ≥ 300V

Note 5: C

L

includes probe and fixture capacitance.

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Electrical Characteristics (Notes 2, 3, 7) (Continued)

Note 6: Generator waveform for all tests unless otherwise specified: f=1 MHz, Z

O

=

50Ω,t

r

≤1 ns, tf≤ 1ns(0%–100%).

Note 7: The DS36C200 is a current mode device and only function with datasheet specification when a resistive load is applied to the drivers outputs.

Switching Characteristic

Over supply voltage and operating temperature ranges, unless otherwise specified. (Notes 5, 6)

Symbol Parameter Conditions Min Typ Max Units
DIFFERENTIAL DRIVER CHARACTERISTICS

t

PHLD

Differential Propagation Delay High to Low R

L

=

55Ω,C

L

=

10 pF

(

Figure 2

and

Figure 3

)

1.0 2.5 5.5 ns

t

PLHD

Differential Propagation Delay Low to High 1.0 2.6 5.5 ns

t

SKD

Differential Skew |t

PHLD–tPLHD

| 0 0.1 2 ns

t

TLH

Transition Time Low to High 0 0.5 2 ns

t

THL

Transition Time High to Low 0 0.5 2 ns

t

PHZ

Disable Time High to Z R

L

=

55Ω

(

Figure 4

and

Figure 5

)

0.3 5 20 ns

t

PLZ

Disable Time Low to Z 0.3 5 20 ns

t

PZH

Enable Time Z to High 0.3 10 30 ns

t

PZL

Enable Time Z to Low 0.3 10 30 ns

DIFFERENTIAL RECEIVER CHARACTERISTICS

t

PHLD

Differential Propagation Delay High to Low C

L

=

10 pF, V

ID

=

200 mV

(

Figure 6

and

Figure 7

)

1.5 5 9 ns

t

PLHD

Differential Propagation Delay Low to High 1.5 4.6 9 ns

t

SKD

Differential Skew |t

PHLD–tPLHD

| 0 0.4 3 ns

t

r

Rise Time 0 1.5 5 ns

t

f

Fall Time 0 1.5 5 ns

t

PHZ

Disable Time High to Z C

L

=

10 pF

(

Figure 8

and

Figure 9

)

1 5 20 ns

t

PLZ

Disable Time Low to Z 1 5 20 ns

t

PZH

Enable Time Z to High 0.3 10 30 ns

t

PZL

Enable Time Z to Low 0.3 10 30 ns

Parameter Measurement Information

DS012621-3

FIGURE 1. Differential Driver DC Test Circuit

DS012621-4

FIGURE 2. Differential Driver Propagation Delay and Transition Time Test Circuit

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