NSC DS34LV86TMX, DS34LV86TM Datasheet

DS34LV86T 3V Enhanced CMOS Quad Differential Line Receiver
General Description
The DS34LV86Tisahighspeedquaddifferential CMOS re­ceiver that meets the requirements of both TIA/EIA-422-B and ITU-T V.11.TheCMOSDS34LV86Tfeatures typical low static I
CC
and power conscious applications. The TRI-STATE
®
en­ables, EN, allow the device to be disabled when not in use to minimize power consumption. The dual enable scheme al­lows for flexibility in turning receivers on and off.
The receiver output (RO) is guaranteed to be High when the inputs are left open. The receiver can detect signals as low as
±
200 mV over the common mode range of±10V.The re­ceiver outputs (RO) are compatible with TTL and LVCMOS levels.
Features
n Low power CMOS design (30 mW typical) n Interoperable with existing 5V RS-422 networks n Industrial temperature range n Meets TIA/EIA-422-B (RS-422) and ITU-T V.11
recommendation
n 3.3V Operation
n
±
7V common mode range VID=3V
n
±
10V common mode range VID= 0.2V
n Receiver OPEN input failsafe feature n Guaranteed AC parameter:
Maximum Receiver Skew: 4 ns Transition time: 10 ns
n Pin compatible with DS34C86T n 32 MHz Toggle Frequency n 6.5k ESD Tolerance (HBM) n Available in SOIC packaging
Connection Diagram Truth Table
Enable Inputs Output
EN RI+–RI− RO
LXZ HV
ID
+0.2V H
HV
ID
−0.2V L
H Open
H
L = Logic Low H = Logic High X = Irrelevant Z = TRI-STATE
= Open, Not Terminated
TRI-STATE®is a registered trademark of National Semiconductor Corporation.
Dual-In-Line Package
DS012644-1
Top View
Order Number DS34LV86TN, DS34LV86TM
See NS Package Number M16A or N16E
February 1997
DS34LV86T 3V Enhanced CMOS Quad Differential Line Receiver
© 1998 National Semiconductor Corporation DS012644 www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Supply Voltage (V
CC
) +7V Enable Input Voltage (EN) +7V Receiver Input Voltage
(V
ID
: RI+, RI−)
±
14V
Receiver Input Voltage
(V
CM
: RI+, RI−)
±
14V
Receiver Output Voltage (RO) −0.5V to V
CC
+ 0.5V
Receiver Output Current (RO)
±
25 mA
Maximum Package Power Dissipation +25˚C
M Package 1190 mW N Package 1645 mW
Derate M Package 9.8 mW/˚C above +25˚C
Derate N Package 13.9 mW/˚C above +25˚C Storage Temperature Range 65˚C to +150˚C Lead Temperature Range
Soldering (4 Seconds) +260˚C
ESD Ratings (HBM, 1.5k, 100 pF)
Receiver Inputs and Enables 6.5 kV Other Pins 2kV
Recommended Operating Conditions
Min Typ Max Units
Supply Voltage (V
CC
) 3.0 3.3 3.6 V
Operating Free Air
Temperature (T
A
) −40 +25 +85 ˚C
Electrical Characteristics (Notes 2, 3)
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified.
Symbol Parameter Conditions Pin Min Typ Max Units
V
TH
Differential Input Threshold V
OUT=VOH
or V
OL
RI+,
RI−
−200
±
17.5 +200 mV
−7V
<
V
CM
<
+7V
V
HY
Hysteresis VCM= 1.5V 35 mV
V
IH
Minimum High Level Input Voltage
EN
2.0 V
V
IL
Minimum Low Level Input Voltage
0.8 V
R
IN
Input Resistance VIN= −7V, +7V
RI+,
RI−
5.0 8.5 k
(Other Input = GND)
I
IN
Input Current (Other Input = 0V, Power On or V
CC
= 0V)
V
IN
= +10V 0 1.1 1.8 mA
V
IN
= +3V 0 0.27 mA
V
IN
= 0.5V −0.02 mA
V
IN
= −3V 0 −0.43 mA
V
IN
= −10V 0 −1.26 −2.2 mA
I
EN
VIN=0VtoV
CC
EN
±
A
V
OH
High Level Output Voltage IOH= −6 mA, VID= +1V
RO
2.4 3 V
I
OH
= −6 mA, VID= OPEN
V
OH
High Level Output Voltage IOH= −100 µA, VID= +1V VCC− 0.1 V
I
OH
= −100 µA, VID= OPEN
V
OL
Low Level Output Voltage IOL= +6 mA, VID= −1V 0.13 0.5 V
I
OZ
Output TRI-STATE Leakage Current
VIN=VCCor GND
±
50 µA
EN=V
IL
I
SC
Output Short Circuit Current VO= 0V, VID≥ |200 mV| −10 −35 −70 mA
(Note 4)
I
CC
Power Supply Current No Load, All RI+, RI− = Open, V
CC
915mA
EN=V
CC
or GND
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Switching Characteristics (Notes 3, 9, 10)
Over Supply Voltage and Operating Temperature ranges, unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Units
t
PHL
Propagation Delay High to Low CL=15pF
(
Figures 1, 2
)
6 17.5 35 ns
t
PLH
Propagation DeIay Low to High 6 17.8 35 ns
t
r
Rise Time (20%to 80%) 4.1 10 ns
t
f
Fall Time (80%to 20%) 3.3 10 ns
t
PHZ
Disable Time CL=50pF 40 ns
t
PLZ
Disable Time (
Figures 3, 4
)40ns
t
PZH
Enable Time 40 ns
t
PZL
Enable Time 40 ns
t
SK1
Skew, |t
PHL−tPLH
|(Note 5) CL=15pF 0.3 4 ns
t
SK2
Skew, Pin to Pin (Note 6) 0.6 4 ns
t
SK3
Skew, Part to Part (Note 7) 7 17 ns
f
MAX
Maximum Operating Frequency CL=15pF 32 MHz (Note 8)
Note 1: “Absolute Maximum Ratings” are those values beyond which the safety of the device cannot be guaranteed. They are not meant to imply that the devices should be operated at these limits. The table of “Electrical Characteristics” specifies conditions of device operation.
Note 2: Current into device pins is defined as positive. Current out of device pins is defined as negative. All voltages are referenced to ground except V
ID
.
Note 3: All typicals are given for: V
CC
= +3.3V, TA= +25˚C.
Note 4: Short one output at a time to ground. Do not exceed package power dissipation ratings. Note 5: t
SK1
is the |t
PHL−tPLH
| of a channel.
Note 6: t
SK2
is the maximum skew between any two channels within a device, on either edge.
Note 7: t
SK3
is the difference in propagation delay times between any channels of any devices. This specification (maximum limit) applies to devices within V
CC
±
0.1V of one another,anda DeltaT
A
=
±
5˚C (between devices) within the operating temperature range. This parameter is guaranteed by design and characterization.
Note 8: All channels switching, output duty cycle criteria is 40%/60%measured at 50%Input = 1V to 2V, 50%Duty Cycle, t
r/tf
5 ns. This parameter is guaranteed
by design and characterization.
Parameter Measurement Information
Note 9: Generator waveform for all tests unless otherwise specified:f=1MHz, Duty Cycle = 50%,ZO=50,tr≤10 ns, tf≤ 10 ns. Note 10: C
L
includes probe and jig capacitance.
DS012644-2
FIGURE 1. Receiver Propagation Delay and Transition Time Test Circuit (Notes 9, 10)
DS012644-3
FIGURE 2. Receiver Propagation Delay and Transition Time Waveform (Notes 9, 10)
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