NSC CD4093BMW8, CD4093BMJ-883 Datasheet
TL/F/5982
CD4093BM/CD4093BC Quad 2-Input NAND Schmitt Trigger
February 1993
CD4093BM/CD4093BC Quad
2-Input NAND Schmitt Trigger
General Description
The CD4093B consists of four Schmitt-trigger circuits. Each
circuit functions as a 2-input NAND gate with Schmitt-trigger
action on both inputs. The gate switches at different points
for positive and negative-going signals. The difference between the positive (V
T
a
) and the negative voltage (V
T
b
)is
defined as hysteresis voltage (V
H
).
All outputs have equal source and sink currents and conform to standard B-series output drive (see Static Electrical
Characteristics).
Features
Y
Wide supply voltage range 3.0V to 15V
Y
Schmitt-trigger on each input
with no external components
Y
Noise immunity greater than 50%
Y
Equal source and sink currents
Y
No limit on input rise and fall time
Y
Standard B-series output drive
Y
Hysteresis voltage (any input) T
A
e
25§C
Typical V
DD
e
5.0V V
H
e
1.5V
V
DD
e
10V V
H
e
2.2V
V
DD
e
15V V
H
e
2.7V
Guaranteed V
H
e
0.1 V
DD
Applications
Y
Wave and pulse shapers
Y
High-noise-environment systems
Y
Monostable multivibrators
Y
Astable multivibrators
Y
NAND logic
Connection Diagram
Dual-In-Line Package
TL/F/5982– 1
Top View
Order Number CD4093B
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Absolute Maximum Ratings (Notes1&2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
DC Supply Voltage (V
DD
)
b
0.5 toa18 V
DC
Input Voltage (VIN)
b
0.5 to V
DD
a
0.5 V
DC
Storage Temperature Range (TS)
b
65§Ctoa150§C
Power Dissipation (PD)
Dual-In-Line 700 mW
Small Outline 500 mW
Lead Temperature (T
L
)
(Soldering, 10 seconds) 260
§
C
Recommended Operating
Conditions
(Note 2)
DC Supply Voltage (VDD) 3 to 15 V
DC
Input Voltage (VIN) 0 to VDDV
DC
Operating Temperature Range (TA)
CD4093BM
b
55§Ctoa125§C
CD4093BC
b
40§Ctoa85§C
DC Electrical Characteristics CD4093BM (Note 2)
Symbol Parameter Conditions
b
55§C
a
25§C
a
125§C
Units
Min Max Min Typ Max Min Max
I
DD
Quiescent Device V
DD
e
5V 0.25 0.25 7.5 mA
Current V
DD
e
10V 0.5 0.5 15.0 mA
V
DD
e
15V 1.0 1.0 30.0 mA
V
OL
Low Level V
IN
e
VDD,lI
O
l
k
1 mA
Output Voltage V
DD
e
5V 0.05 0 0.05 0.05 V
V
DD
e
10V 0.05 0 0.05 0.05 V
V
DD
e
15V 0.05 0 0.05 0.05 V
V
OH
High Level V
IN
e
VSS,lI
O
l
k
1 mA
Output Voltage V
DD
e
5V 4.95 4.95 5 4.95 V
V
DD
e
10V 9.95 9.95 10 9.95 V
V
DD
e
15V 14.95 14.95 15 14.95 V
V
T
b
Negative-Going ThresholdlI
O
l
k
1 mA
Voltage (Any Input) V
DD
e
5V, V
O
e
4.5V 1.3 2.25 1.5 1.8 2.25 1.5 2.3 V
V
DD
e
10V, V
O
e
9V 2.85 4.5 3.0 4.1 4.5 3.0 4.65 V
V
DD
e
15V, V
O
e
13.5V 4.35 6.75 4.5 6.3 6.75 4.5 6.9 V
V
T
a
Positive-Going ThresholdlI
O
l
k
1 mA
Voltage (Any Input) V
DD
e
5V, V
O
e
0.5V 2.75 3.65 2.75 3.3 3.5 2.65 3.5 V
V
DD
e
10V, V
O
e
1V 5.5 7.15 5.5 6.2 7.0 5.35 7.0 V
V
DD
e
15V, V
O
e
1.5V 8.25 10.65 8.25 9.0 10.5 8.1 10.5 V
V
H
Hysteresis (V
T
a
b
V
T
b
)V
DD
e
5V 0.5 2.35 0.5 1.5 2.0 0.35 2.0 V
(Any Input) V
DD
e
10V 1.0 4.30 1.0 2.2 4.0 0.70 4.0 V
V
DD
e
15V 1.5 6.30 1.5 2.7 6.0 1.20 6.0 V
I
OL
Low Level Output V
IN
e
V
DD
Current (Note 3) V
DD
e
5V, V
O
e
0.4V 0.64 0.51 0.88 0.36 mA
V
DD
e
10V, V
O
e
0.5V 1.6 1.3 2.25 0.9 mA
V
DD
e
15V, V
O
e
1.5V 4.2 3.4 8.8 2.4 mA
I
OH
High Level Output V
IN
e
V
SS
Current (Note 3) V
DD
e
5V, V
O
e
4.6V
b
0.64 0.51b0.88
b
0.36 mA
V
DD
e
10V, V
O
e
9.5Vb1.6
b
1.3b2.25
b
0.9 mA
V
DD
e
15V, V
O
e
13.5Vb4.2
b
3.4b8.8
b
2.4 mA
I
IN
Input Current V
DD
e
15V, V
IN
e
0V
b
0.1
b
10
b
5
b
0.1
b
1.0 mA
V
DD
e
15V, V
IN
e
15V 0.1 10
b
5
0.1 1.0 mA
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed; they are not meant to imply that the devices
should be operated at these limits. The table of ‘‘Recommended Operating Conditions’’ and ‘‘Electrical Characteristics’’ provides conditions for actual device
operation.
Note 2: V
SS
e
0V unless otherwise specified.
Note 3: I
OH
and IOLare tested one output at a time.
2
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