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CD4071BMW-883
Datasheet
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NSC CD4071BMW-883 Datasheet

TL/F/5977
CD4071BM/CD4071BC Quad 2-Input OR Buffered B Series Gate
CD4081BM/CD4081BC Quad 2-Input AND Buffered B Series Gate
February 1988
CD4071BM/CD4071BC Quad 2-Input OR Buffered B Series Gate CD4081BM/CD4081BC Quad 2-Input AND Buffered B Series Gate
General Description
These quad gates are monolithic complementary MOS (CMOS) integrated circuits constructed with N- and P-chan­nel enhancement mode transistors. They have equal source and sink current capabilities and conform to standard B se­ries output drive. The devices also have buffered outputs which improve transfer characteristics by providing very high gain.
DD
and VSS.
Features
Y
Low power TTL Fan out of 2 driving 74L
compatibility or 1 driving 74LS
Y
5V–10V–15V parametric ratings
Y
Symmetrical output characteristics
Y
Maximum input leakage 1 mA at 15V over full tempera­ture range
Connection Diagrams
CD4071B Dual-In-Line Package
TL/F/5977– 3
Top View
CD4081B Dual-In-Line Package
TL/F/5977– 6
Top View
Order Number CD4071B or CD4081B
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Absolute Maximum Ratings (Notes1&2)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/Distributors for availability and specifications.
Voltage at Any Pin
b
0.5V to V
DD
a
0.5V
Power Dissipation (PD)
Dual-In-Line 700 mW Small Outline 500 mW
V
DD
Range
b
0.5 VDCtoa18 V
DC
Storage Temperature (TS)
b
65§Ctoa150§C
Lead Temperature (T
L
)
(Soldering, 10 seconds) 260
§
C
Operating Conditions
Operating Range (VDD)3V
DC
to 15 V
DC
Operating Temperature Range (TA)
CD4071BM, CD4081BM
b
55§Ctoa125§C
CD4071BC, CD4081BC
b
40§Ctoa85§C
DC Electrical Characteristics CD4071BM/CD4081BM (Note 2)
Symbol Parameter Conditions
b
55§C
a
25§C
a
125§C
Units
Min Max Min Typ Max Min Max
I
DD
Quiescent Device V
DD
e
5V 0.25 0.004 0.25 7.5 mA
Current V
DD
e
10V 0.50 0.005 0.50 15 mA
V
DD
e
15V 1.0 0.006 1.0 30 mA
V
OL
Low Level V
DD
e
5V 0.05 0 0.05 0.05 V
Output Voltage V
DD
e
10V
l
I
O
l
k
1 mA 0.05 0 0.05 0.05 V
V
DD
e
15V
(
0.05 0 0.05 0.05 V
V
OH
High Level V
DD
e
5V 4.95 4.95 5 4.95 V
Output Voltage V
DD
e
10V
l
I
O
l
k
1 mA 9.95 9.95 10 9.95 V
V
DD
e
15V
(
14.95 14.95 15 14.95 V
V
IL
Low Level V
DD
e
5V, V
O
e
0.5V 1.5 2 1.5 1.5 V
Input Voltage V
DD
e
10V, V
O
e
1.0V 3.0 4 3.0 3.0 V
V
DD
e
15V, V
O
e
1.5V 4.0 6 4.0 4.0 V
V
IH
High Level V
DD
e
5V, V
O
e
4.5V 3.5 3.5 3 3.5 V
Input Voltage V
DD
e
10V, V
O
e
9.0V 7.0 7.0 6 7.0 V
V
DD
e
15V, V
O
e
13.5V 11.0 11.0 9 11.0 V
I
OL
Low Level Output V
DD
e
5V, V
O
e
0.4V 0.64 0.51 0.88 0.36 mA
Current V
DD
e
10V, V
O
e
0.5V 1.6 1.3 2.25 0.9 mA
(Note 3) V
DD
e
15V, V
O
e
1.5V 4.2 3.4 8.8 2.4 mA
I
OH
High Level Output V
DD
e
5V, V
O
e
4.6V
b
0.64
b
0.51b0.88
b
0.36 mA
Current V
DD
e
10V, V
O
e
9.5V
b
1.6
b
1.3b2.25
b
0.9 mA
(Note 3) V
DD
e
15V, V
O
e
13.5V
b
4.2
b
3.4b8.8
b
2.4 mA
I
IN
Input Current V
DD
e
15V, V
IN
e
0V
b
0.10
b
10
b
5
b
0.10
b
1.0 mA
V
DD
e
15V, V
IN
e
15V 0.10 10
b
5
0.10 1.0 mA
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation.
Note 2: All voltages measured with respect to V
SS
unless otherwise specified.
Note 3: I
OH
and IOLare tested one output at a time.
2
DC Electrical Characteristics CD4071BC/CD4081BC (Note 2)
Symbol Parameter Conditions
b
40§C
a
25§C
a
85§C
Units
Min Max Min Typ Max Min Max
I
DD
Quiescent Device V
DD
e
5V 1 0.004 1 7.5 mA
Current V
DD
e
10V 2 0.005 2 15 mA
V
DD
e
15V 4 0.006 4 30 mA
V
OL
Low Level V
DD
e
5V 0.05 0 0.05 0.05 V
Output Voltage V
DD
e
10V
l
I
O
l
k
1 mA 0.05 0 0.05 0.05 V
V
DD
e
15V
(
0.05 0 0.05 0.05 V
V
OH
High Level V
DD
e
5V 4.95 4.95 5 4.95 V
Output Voltage V
DD
e
10V
l
I
O
l
k
1 mA 9.95 9.95 10 9.95 V
V
DD
e
15V
(
14.95 14.95 15 14.95 V
V
IL
Low Level V
DD
e
5V, V
O
e
0.5V 1.5 2 1.5 1.5 V
Input Voltage V
DD
e
10V, V
O
e
1.0V 3.0 4 3.0 3.0 V
V
DD
e
15V, V
O
e
1.5V 4.0 6 4.0 4.0 V
V
IH
High Level V
DD
e
5V, V
O
e
4.5V 3.5 3.5 3 3.5 V
Input Voltage V
DD
e
10V, V
O
e
9.0V 7.0 7.0 6 7.0 V
V
DD
e
15V, V
O
e
13.5V 11.0 11.0 9 11.0 V
I
OL
Low Level Output V
DD
e
5V, V
O
e
0.4V 0.52 0.44 0.88 0.36 mA
Current V
DD
e
10V, V
O
e
0.5V 1.3 1.1 2.25 0.9 mA
(Note 3) V
DD
e
15V, V
O
e
1.5V 3.6 3.0 8.8 2.4 mA
I
OH
High Level Output V
DD
e
5V, V
O
e
4.6V
b
0.52
b
0.44b0.88
b
0.36 mA
Current V
DD
e
10V, V
O
e
9.5V
b
1.3
b
1.1b2.25
b
0.9 mA
(Note 3) V
DD
e
15V, V
O
e
13.5V
b
3.6
b
3.0b8.8
b
2.4 mA
I
IN
Input Current V
DD
e
15V, V
IN
e
0V
b
0.30
b
10
b
5
b
0.30
b
1.0 mA
V
DD
e
15V, V
IN
e
15V 0.30 10
b
5
0.30 1.0 mA
AC Electrical Characteristics* CD4071BC/CD4071BM
T
A
e
25§C, Input tr;t
f
e
20 ns, C
L
e
50 pF, R
L
e
200 kX, Typical temperature coefficient is 0.3%/§C
Symbol Parameter Conditions Typ Max Units
t
PHL
Propagation Delay Time, V
DD
e
5V 100 250 ns
High-to-Low Level V
DD
e
10V 40 100 ns
V
DD
e
15V 30 70 ns
t
PLH
Propagation Delay Time, V
DD
e
5V 90 250 ns
Low-to-High Level V
DD
e
10V 40 100 ns
V
DD
e
15V 30 70 ns
t
THL,tTLH
Transition Time V
DD
e
5V 90 200 ns
V
DD
e
10V 50 100 ns
V
DD
e
15V 40 80 ns
C
IN
Average Input Capacitance Any Input 5 7.5 pF
C
PD
Power Dissipation Capacity Any Gate 18 pF
*AC Parameters are guaranteed by DC correlated testing.
Note 1: ‘‘Absolute Maximum Ratings’’ are those values beyond which the safety of the device cannot be guaranteed. Except for ‘‘Operating Temperature Range’’ they are not meant to imply that the devices should be operated at these limits. The table of ‘‘Electrical Characteristics’’ provides conditions for actual device operation.
Note 2: All voltages measured with respect to V
SS
unless otherwise specified.
Note 3: I
OH
and IOLare tested one output at a time.
3
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