NSC CD4066BCN, CD4066BCM, CD4066BCJ, CD4066BMN, CD4066BMJ Datasheet
TL/F/5665
CD4066BM/CD4066BC Quad Bilateral Switch
June 1992
CD4066BM/CD4066BC Quad Bilateral Switch
General Description
The CD4066BM/CD4066BC is a quad bilateral switch intended for the transmission or multiplexing of analog or digital signals. It is pin-for-pin compatible with CD4016BM/
CD4016BC, but has a much lower ‘‘ON’’ resistance, and
‘‘ON’’ resistance is relatively constant over the input-signal
range.
Features
Y
Wide supply voltage range 3V to 15V
Y
High noise immunity 0.45 VDD(typ.)
Y
Wide range of digital and
g
7.5 V
PEAK
analog switching
Y
‘‘ON’’ resistance for 15V operation 80X
Y
Matched ‘‘ON’’ resistance DR
ON
e
5X (typ.)
over 15V signal input
Y
‘‘ON’’ resistance flat over peak-to-peak signal range
Y
High ‘‘ON’’/‘‘OFF’’ 65 dB (typ.)
output voltage ratio
@
f
is
e
10 kHz, R
L
e
10 kX
Y
High degree linearity 0.1% distortion (typ.)
High degree linearity
@
f
is
e
1 kHz, V
is
e
5V
p-p
,
High degree linearity V
DD
b
V
SS
e
10V, R
L
e
10 kX
Y
Extremely low ‘‘OFF’’ 0.1 nA (typ.)
switch leakage
@
V
DD
b
V
SS
e
10V, T
A
e
25§C
Y
Extremely high control input impedance 1012X(typ.)
Y
Low crosstalk
b
50 dB (typ.)
between switches
@
f
is
e
0.9 MHz, R
L
e
1kX
Y
Frequency response, switch ‘‘ON’’ 40 MHz (typ.)
Applications
Y
Analog signal switching/multiplexing
#
Signal gating
#
Squelch control
#
Chopper
#
Modulator/Demodulator
#
Commutating switch
Y
Digital signal switching/multiplexing
Y
CMOS logic implementation
Y
Analog-to-digital/digital-to-analog conversion
Y
Digital control of frequency, impedance, phase, and analog-signal-gain
Schematic and Connection Diagrams
TL/F/5665– 1
Dual-In-Line Package
Top View
Order Number CD4066B
C
1995 National Semiconductor Corporation RRD-B30M105/Printed in U. S. A.
Absolute Maximum Ratings (Notes1&2)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales
Office/Distributors for availability and specifications.
Supply Voltage (V
DD
)
b
0.5V toa18V
Input Voltage (VIN)
b
0.5V to V
DD
a
0.5V
Storage Temperature Range (T
S
)
b
65§Ctoa150§C
Power Dissipation (PD)
Dual-In-Line 700 mW
Small Outline 500 mW
Lead Temperature (T
L
)
(Soldering, 10 seconds) 300
§
C
Recommended Operating
Conditions
(Note 2)
Supply Voltage (VDD) 3Vto15V
Input Voltage (VIN) 0VtoV
DD
Operating Temperature Range (TA)
CD4066BM
b
55§Ctoa125§C
CD4066BC
b
40§Ctoa85§C
DC Electrical Characteristics CD4066BM (Note 2)
Symbol Parameter Conditions
b
55§C
a
25§C
a
125§C
Units
Min Max Min Typ Max Min Max
I
DD
Quiescent Device Current V
DD
e
5V 0.25 0.01 0.25 7.5 mA
V
DD
e
10V 0.5 0.01 0.5 15 mA
V
DD
e
15V 1.0 0.01 1.0 30 mA
SIGNAL INPUTS AND OUTPUTS
R
ON
‘‘ON’’ Resistance R
L
e
10 kX to
V
DD
b
V
SS
2
V
C
e
VDD,V
IS
e
VSSto V
DD
V
DD
e
5V 800 270 1050 1300 X
V
DD
e
10V 310 120 400 550 X
V
DD
e
15V 200 80 240 320 X
DR
ON
D‘‘ON’’ Resistance R
L
e
10 kX to
V
DD
b
V
SS
2
Between any 2 of V
C
e
VDD,V
IS
e
VSSto V
DD
4 Switches V
DD
e
10V 10 X
V
DD
e
15V 5 X
I
IS
Input or Output Leakage V
C
e
0
g
50
g
0.1g50
g
500 nA
Switch ‘‘OFF’’ V
IS
e
15V and 0V,
V
OS
e
0V and 15V
CONTROL INPUTS
V
ILC
Low Level Input Voltage V
IS
e
VSSand V
DD
V
OS
e
VDDand V
SS
I
IS
e
g
10 mA
V
DD
e
5V 1.5 2.25 1.5 1.5 V
V
DD
e
10V 3.0 4.5 3.0 3.0 V
V
DD
e
15V 4.0 6.75 4.0 4.0 V
V
IHC
High Level Input Voltage V
DD
e
5V 3.5 3.5 2.75 3.5 V
V
DD
e
10V (see note 6) 7.0 7.0 5.5 7.0 V
V
DD
e
15V 11.0 11.0 8.25 11.0 V
I
IN
Input Current V
DD
b
V
SS
e
15V
g
0.1
g
10
b
5
g
0.1
g
1.0 mA
V
DD
t
V
IS
t
V
SS
V
DD
t
V
C
t
V
SS
DC Electrical Characteristics CD4066BC (Note 2)
Symbol Parameter Conditions
b
40§C
a
25§C
a
85§C
Units
Min Max Min Typ Max Min Max
I
DD
Quiescent Device Current V
DD
e
5V 1.0 0.01 1.0 7.5 mA
V
DD
e
10V 2.0 0.01 2.0 15 mA
V
DD
e
15V 4.0 0.01 4.0 30 mA
2
DC Electrical Characteristics (Continued) CD4066BC (Note 2)
Symbol Parameter Conditions
b
40§C
a
25§C
a
85§C
Units
Min Max Min Typ Max Min Max
SIGNAL INPUTS AND OUTPUTS
R
ON
‘‘ON’’ Resistance R
L
e
10 kX to
V
DD
b
V
SS
2
V
C
e
VDD,VSSto V
DD
V
DD
e
5V 850 270 1050 1200 X
V
DD
e
10V 330 120 400 520 X
V
DD
e
15V 210 80 240 300 X
DR
ON
D‘‘ON’’ Resistance R
L
e
10 kX to
V
DD
b
V
SS
2
Between Any 2 of V
CC
e
VDD,V
IS
e
VSSto V
DD
4 Switches V
DD
e
10V 10 X
V
DD
e
15V 5 X
I
IS
Input or Output Leakage V
C
e
0
g
50
g
0.1g50
g
200 nA
Switch ‘‘OFF’’
CONTROL INPUTS
V
ILC
Low Level Input Voltage V
IS
e
VSSand V
DD
V
OS
e
VDDand V
SS
I
IS
e
g
10mA
V
DD
e
5V 1.5 2.25 1.5 1.5 V
V
DD
e
10V 3.0 4.5 3.0 3.0 V
V
DD
e
15V 4.0 6.75 4.0 4.0 V
V
IHC
High Level Input Voltage V
DD
e
5V 3.5 3.5 2.75 3.5 V
V
DD
e
10V (See note 6) 7.0 7.0 5.5 7.0 V
V
DD
e
15V 11.0 11.0 8.25 11.0 V
I
IN
Input Current V
DD
b
V
SS
e
15V
g
0.3
g
10
b
5
g
0.3
g
1.0 mA
V
DD
t
V
IS
t
V
SS
V
DD
t
V
C
t
V
SS
AC Electrical Characteristics* T
A
e
25
§
C, t
r
e
t
f
e
20 ns and V
SS
e
0V unless otherwise noted
Symbol Parameter Conditions Min Typ Max Units
t
PHL,tPLH
Propagation Delay Time Signal V
C
e
VDD,C
L
e
50 pF, (
Figure 1
)
Input to Signal Output R
L
e
200k
V
DD
e
5V 25 55 ns
V
DD
e
10V 15 35 ns
V
DD
e
15V 10 25 ns
t
PZH,tPZL
Propagation Delay Time R
L
e
1.0 kX,C
L
e
50 pF, (
Figures 2
and3)
Control Input to Signal V
DD
e
5V 125 ns
Output High Impedance to V
DD
e
10V 60 ns
Logical Level V
DD
e
15V 50 ns
t
PHZ,tPLZ
Propagation Delay Time R
L
e
1.0 kX,C
L
e
50 pF, (
Figures 2
and3)
Control Input to Signal V
DD
e
5V 125 ns
Output Logical Level to V
DD
e
10V 60 ns
High Impedance V
DD
e
15V 50 ns
Sine Wave Distortion V
C
e
V
DD
e
5V, V
SS
eb
5V 0.1 %
R
L
e
10 kX,V
IS
e
5V
p-p
,fe1 kHz,
(
Figure 4
)
Frequency Response-Switch V
C
e
V
DD
e
5V, V
SS
eb
5V, 40 MHz
‘‘ON’’ (Frequency at
b
3 dB) R
L
e
1kX,V
IS
e
5V
p-p
,
20 Log
10VOS/VOS
(1 kHz)bdB,
(
Figure 4
)
3
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