NSC 5962-9218201MDA, 5962-9218201MCA, 5962-9218201M2A, 54ACTQ10MDA Datasheet
54ACTQ10
Quiet Series Triple 3-Input NAND Gate
General Description
The ’ACTQ10 contains three, 3-input NAND gates and utilizes NSC Quiet Series technology to guarantee quiet output
switching and improved dynamic threshold performance.
FACT Quiet Series
®
features GTO®output control and undershoot corrector in addition to a split ground bus for superior ACMOS performance.
Features
n ICCreduced by 50
%
n Guaranteed simultaneous switching noise level and
dynamic threshold performance
n Improved latch-up immunity
n Minimum 2 kV ESD protection
n Outputs source/sink 24 mA
n ’ACTQ10 has TTL-compatible inputs
n Standard Microcircuit Drawing (SMD) 5962-9218201
Logic Symbol
Pin Names Description
A
n,Bn,Cn
Inputs
O
n
Outputs
Connection Diagrams
GTO®is a trademark of National Semiconductor Corporation.
FACT
®
and FACT Quiet Series®are trademarks of Fairchild Semiconductor Corporation.
IEEE/IEC
DS010892-1
Pin Assignment
for DIP and Flatpak
DS010892-2
Pin Assignment
for LCC
DS010892-3
September 1998
54ACTQ10 Quiet Series Triple 3-Input NAND Gate
© 1998 National Semiconductor Corporation DS010892 www.national.com
Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Supply Voltage (V
CC
) −0.5V to +7.0V
DC Input Diode Current (I
IK
)
V
I
=
−0.5V −20 mA
V
I
=
V
CC
+ 0.5V +20 mA
DC Input Voltage (V
I
) −0.5V to VCC+ 0.5V
DC Output Diode Current (I
OK
)
V
O
=
−0.5V −20 mA
V
O
=
V
CC
+ 0.5V +20 mA
DC Output Voltage (V
O
) −0.5V to VCC+ 0.5V
DC Output Source
or Sink Current (I
O
)
±
50 mA
DC V
CC
or Ground Current
per Output Pin (I
CC
or I
GND
)
±
50 mA
Storage Temperature (T
STG
) −65˚C to +150˚C
DC Latch-Up Source or Sink Current
±
300 mA
Junction Temperature (T
J
)
CDIP 175˚C
Recommended Operating
Conditions
(Note 2)
Supply Voltage (V
CC
)
’ACTQ 4.5V to 5.5V
Input Voltage (V
I
) 0VtoV
CC
Output Voltage (VO) 0VtoV
CC
Operating Temperature (TA)
54ACTQ −55˚C to +125˚C
Minimum Input Edge Rate (dV/dt)
’ACTQ Devices 125 mV/ns
V
IN
from 0.8V to 2.0V
V
CC
@
4.5V, 5.5V
Note 1: Absolute maximum ratings are values beyond which damage to the
device may occur. The databook specifications should be met, without exception, to ensure that the system design is reliable over its power supply, temperature, and output/input loading variables. National does not recommend
operation outside of databook specifications.
Note 2: All commercial packaging is not recommended for applications requiring greater than 2000 temperature cycles from −40˚C to +125˚C.
DC Characteristics for ’ACTQ Family Devices
54ACTQ
Symbol Parameter V
CC
T
A
=
Units Conditions
(V) −55˚C to +125˚C
Guaranteed Limits
V
IH
Minimum High Level 4.5 2.0 V V
OUT
=
0.1V
Input Voltage 5.5 2.0 or V
CC
− 0.1V
V
IL
Maximum Low Level 4.5 0.8 V V
OUT
=
0.1V
Input Voltage 5.5 0.8 or V
CC
− 0.1V
V
OH
Minimum High Level 4.5 4.4 V I
OUT
=
−50 µA
Output Voltage 5.5 5.4
(Note 3)
V
IN
=
V
IL
or V
IH
4.5 3.70 V IOH= −24 mA
5.5 4.70 I
OH
=−24 mA
V
OL
Maximum Low Level 4.5 0.1 V I
OUT
=
50 µA
Output Voltage 5.5 0.1
(Note 3)
V
IN
=
V
IL
or V
IH
4.5 0.50 V IOL=24mA
5.5 0.50 I
OL
=24mA
I
IN
Maximum Input 5.5
±
1.0 µA V
I
=
V
CC
, GND
Leakage Current
I
CCT
Maximum 5.5 1.6 mA V
I
=
V
CC
− 2.1V
I
CC
/Input
I
OLD
Minimum Dynamic 5.5 50 mA V
OLD
=
1.65V Max
I
OHD
Output Current (Note 4) 5.5 −50 mA V
OHD
=
3.85V Min
I
CC
Maximum Quiescent 5.5 40.0 µA V
IN
=
V
CC
Supply Current or GND (Note 5)
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