NSC 100328MW8, 100328FMQB, 100328FC, 100328DMQB Datasheet

100328 Low Power Octal ECL/TTL Bi-Directional Translator with Latch
General Description
The 100328 is an octal latched bi-directional translator de­signed to convert TTL logic levels to 100K ECL logic levels and vice versa.Thedirectionof this translation is determined by the DIR input. A LOW on the output enable input (OE) holds the ECL outputs in a cut-off state and the TTL outputs at a high impedance level. A HIGH on the latch enable input (LE) latches the data at both inputs even though only one output is enabled at the time. A LOW on LE makes the 100328 transparent.
The cut-off state is designed to be more negative than a nor­mal ECL LOW level. This allows the output emitter-followers to turn off when the termination supply is −2.0V,presenting a high impedance to the data bus. This high impedance re­duces termination power and prevents loss of low state noise margin when several loads share the bus.
The 100328 is designed with FAST
®
TTL output buffers, fea­turing optimal DC drive and capable of quickly charging and discharging highly capacitive loads. All inputs have 50 k pull-down resistors.
Features
n Identical performance to the 100128 at 50%of the
supply current
n Bi-directional translation n 2000V ESD protection n Latched outputs n FAST TTL outputs n TRI-STATE
®
outputs
n Voltage compensated operating range
=
−4.2V to −5.7V
n Available to MIL-STD-883
Logic Symbol
Pin Names Description
E
0–E7
ECL Data I/O
T
0–T7
TTL Data I/O OE Output Enable Input LE Latch Enable Input DIR Direction Control Input
All pins function at 100K ECL levels except for T0–T7.
TRI-STATE®is a registered trademark of National Semiconductor Corporation. FAST
®
is a registered trademark of Fairchild Semiconductor.
DS100295-1
August 1998
100328 Low Power Octal ECL/TTL Bi-Directional Translator with Latch
© 1998 National Semiconductor Corporation DS100295 www.national.com
Connection Diagrams
24-Pin DIP
DS100295-2
24-Pin Quad Cerpak
DS100295-4
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Functional Diagram
Detail
Truth Table
OE DIR LE ECL TTL Notes
Port Port
L X L LOW Z
(Cut-Off) L L H Input Z (Notes 1, 3) L H H LOW Input (Notes 2, 3)
(Cut-Off) H L L L L (Notes 1, 4) H L L H H (Notes 1, 4) H L H X Latched (Notes 1, 3) H H L L L (Notes 2, 4) H H L H H (Notes 2, 4) H H H Latched X (Notes 2, 4)
H=HIGH Voltage Level L=LOW Voltage Level X=Don’t Care Z=High Impedance
Note 1: ECL input to TTL output mode. Note 2: TTL input to ECL output mode. Note 3: Retains data present before LE set HIGH. Note 4: Latch is transparent.
DS100295-5
Note: LE, DIR, and OE use ECL logic levels
DS100295-6
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Absolute Maximum Ratings (Note 5)
If Military/Aerospace specified devices are required, please contact the National Semiconductor Sales Office/ Distributors for availability and specifications.
Storage Temperature (T
STG
) −65˚C to +150˚C
Maximum Junction Temperature (T
J
)
Ceramic +175˚C
V
EE
Pin Potential to
Ground Pin −7.0V to +0.5V
V
TTL
Pin Potential to
Ground Pin −0.5V to +6.0V
ECL Input Voltage (DC) V
EE
to +0.5V
ECL Output Current
(DC Output HIGH) −50 mA TTL Input Voltage (Note 7) −0.5V to +6.0V TTL Input Current (Note 7) −30 mA to +5.0 mA
Voltage Applied to Output in HIGH State
TRI-STATE Output −0.5V to +5.5V
Current Applied to TTL
Output in LOW State (Max) Twice the Rated I
OL
(mA)
ESD (Note 6) 2000V
Recommended Operating Conditions
Case Temperature (TC)
Military −55˚C to +125˚C
ECL Supply Voltage (V
EE
) −5.7V to −4.2V
TTL Supply Voltage (V
TTL
) +4.5V to +5.5V
Note 5: Absolute maximum ratings are those values beyond which the de­vice may be damaged or have its useful life impaired. Functional operation under these conditions is not implied.
Note 6: ESD testing conforms to MIL-STD-883, Method 3015. Note 7: Either voltage limit or current limit is sufficient to protect inputs.
Military Version TTL-to-ECL DC Electrical Characteristics
V
EE
=
−4.2V to −5.7V, V
CC
=
V
CCA
=
GND, T
C
=
−55˚C to +125˚C, V
TTL
=
+4.5V to +5.5V
Symbol Parameter Min Max Units T
C
Conditions Notes
V
OH
Output HIGH Voltage −1025 −870 mV 0˚C to Loading with
50to −2.0V
(Notes 8, 9,
10)
+125˚C
−1085 −870 mV −55˚C V
IN
=
V
IH
(Max)
V
OL
Output LOW Voltage −1830 −1620 mV 0˚C to or VIL(Min)
+125˚C
−1830 −1555 mV −55˚C
Cutoff Voltage −1950 mV 0˚C to
+125˚C OE or DIR Low
−1850 mV −55˚C
V
OHC
Output HIGH Voltage −1035 mV 0˚C to (Notes 8, 9,
10)
+125˚C
−1085 mV −55˚C V
IN
=
V
IH
(Min) Loading with
V
OLC
Output LOW Voltage −1610 mV 0˚C to or VIL(Max) 500 to −2.0V
+125˚C
−1555 mV −55˚C
V
IH
Input HIGH Voltage 2.0 V −55˚C to Over V
TTL,VEE,TC
Range (Notes 8, 9,
10, 11)
+125˚C
V
IL
Input LOW Voltage 0.8 V −55˚C to Over V
TTL,VEE,TC
Range (Notes 8, 9,
10, 11)
+125˚C
I
IH
Input HIGH Current 70 µA −55˚C to V
IN
=
+2.7V (Notes 8, 9,
10)
125˚C
Breakdown Test 1.0 mA −55˚C to V
IN
=
+5.5V
+125˚C
I
IL
Input LOW Current −1.0 mA −55˚C to V
IN
=
+0.5V (Notes 8, 9,
10)
+125˚C
V
FCD
Input Clamp −1.2 V −55˚C to I
IN
=
−18 mA (Notes 8, 9,
10)
Diode Voltage +125˚ C
I
EE
VEESupply Current LE Low, OE and DIR High (Notes 8, 9,
10)
−55˚C to Inputs Open
−165 −73 mA +125˚C V
EE
=
−4.2V to −4.8V
−175 −73 V
EE
=
−4.2V to −5.7V
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