Absolute Maximum Ratings (Note 5)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Storage Temperature (T
STG
) −65˚C to +150˚C
Maximum Junction Temperature (T
J
)
Ceramic +175˚C
V
EE
Pin Potential to
Ground Pin −7.0V to +0.5V
V
TTL
Pin Potential to
Ground Pin −0.5V to +6.0V
ECL Input Voltage (DC) V
EE
to +0.5V
ECL Output Current
(DC Output HIGH) −50 mA
TTL Input Voltage (Note 7) −0.5V to +6.0V
TTL Input Current (Note 7) −30 mA to +5.0 mA
Voltage Applied to Output in HIGH State
TRI-STATE Output −0.5V to +5.5V
Current Applied to TTL
Output in LOW State (Max) Twice the Rated I
OL
(mA)
ESD (Note 6) ≥2000V
Recommended Operating
Conditions
Case Temperature (TC)
Military −55˚C to +125˚C
ECL Supply Voltage (V
EE
) −5.7V to −4.2V
TTL Supply Voltage (V
TTL
) +4.5V to +5.5V
Note 5: Absolute maximum ratings are those values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 6: ESD testing conforms to MIL-STD-883, Method 3015.
Note 7: Either voltage limit or current limit is sufficient to protect inputs.
Military Version
TTL-to-ECL DC Electrical Characteristics
V
EE
=
−4.2V to −5.7V, V
CC
=
V
CCA
=
GND, T
C
=
−55˚C to +125˚C, V
TTL
=
+4.5V to +5.5V
Symbol Parameter Min Max Units T
C
Conditions Notes
V
OH
Output HIGH Voltage −1025 −870 mV 0˚C to Loading with
50Ω to −2.0V
(Notes 8, 9,
10)
+125˚C
−1085 −870 mV −55˚C V
IN
=
V
IH
(Max)
V
OL
Output LOW Voltage −1830 −1620 mV 0˚C to or VIL(Min)
+125˚C
−1830 −1555 mV −55˚C
Cutoff Voltage −1950 mV 0˚C to
+125˚C OE or DIR Low
−1850 mV −55˚C
V
OHC
Output HIGH Voltage −1035 mV 0˚C to (Notes 8, 9,
10)
+125˚C
−1085 mV −55˚C V
IN
=
V
IH
(Min) Loading with
V
OLC
Output LOW Voltage −1610 mV 0˚C to or VIL(Max) 50Ω0 to −2.0V
+125˚C
−1555 mV −55˚C
V
IH
Input HIGH Voltage 2.0 V −55˚C to Over V
TTL,VEE,TC
Range (Notes 8, 9,
10, 11)
+125˚C
V
IL
Input LOW Voltage 0.8 V −55˚C to Over V
TTL,VEE,TC
Range (Notes 8, 9,
10, 11)
+125˚C
I
IH
Input HIGH Current 70 µA −55˚C to V
IN
=
+2.7V (Notes 8, 9,
10)
125˚C
Breakdown Test 1.0 mA −55˚C to V
IN
=
+5.5V
+125˚C
I
IL
Input LOW Current −1.0 mA −55˚C to V
IN
=
+0.5V (Notes 8, 9,
10)
+125˚C
V
FCD
Input Clamp −1.2 V −55˚C to I
IN
=
−18 mA (Notes 8, 9,
10)
Diode Voltage +125˚ C
I
EE
VEESupply Current LE Low, OE and DIR High (Notes 8, 9,
10)
−55˚C to Inputs Open
−165 −73 mA +125˚C V
EE
=
−4.2V to −4.8V
−175 −73 V
EE
=
−4.2V to −5.7V
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