Absolute Maximum Ratings (Note 1)
If Military/Aerospace specified devices are required,
please contact the National Semiconductor Sales Office/
Distributors for availability and specifications.
Above which the useful life may be impaired (Note 1)
Storage Temperature (T
STG
) −65˚C to +150˚C
Maximum Junction Temperture (T
J
)
Ceramic +175˚C
Pin Potential to Ground Pin (V
EE
) −7.0V to +0.5V
Input Voltage (DC) V
EE
to +0.5V
Output Current (DC Output HIGH) −50 mA
ESD (Note 2) ≥2000V
Recommended Operating
Conditions
Case Temperature (TC)
Military −55˚C to +125˚C
Supply Voltage (V
EE
) −5.7V to −4.2V
Note 1: Absolute maximum ratings are those values beyond which the device may be damaged or have its useful life impaired. Functional operation
under these conditions is not implied.
Note 2: ESD testing conforms to MIL-STD-883, Method 3015.
Military Version
DC Electrical Characteristics
V
EE
=
−4.2V to −5.7V, V
CC
=
V
CCA
=
GND, T
C
=
−55˚C to +125˚C (Note 5)
Symbol Parameter Min Typ Max Units T
C
Conditions Notes
V
OH
Output HIGH
Voltage
−1025 −870 mV
0˚C to V
IN
=
V
IH
(Max)
or VIL(Min)
Loading with
50Ω to −2.0V
+125˚C
−1085 −870 mV −55˚C (Notes 3, 4, 5)
V
OL
Output LOW Voltage −1830 −1620 mV 0˚C to
+125˚C
−1830 −1555 mV −55˚C
V
OHC
Output HIGH −1035 mV 0˚C to V
IN
=
V
IH
(Max)
or VIL(Min)
Loading with
50Ω to −2.0V
Voltage +125˚C
−1085 mV −55˚C (Notes 3, 4, 5)
V
OLC
Output LOW −1610 mV 0˚C to
Voltage +125˚C
−1555 mV −55˚C
V
BB
Output Reference −1260 mV 0˚C to I
VBB
=
0 µA, V
EE
=
4.2V (Notes 3, 4, 5)
Voltage +125˚C
−1380 −1260 mV 0˚C to I
VBB
=
−250 µA, V
EE
=
−5.7V
+125˚C (Notes 3, 4, 5)
−1396 mV −55˚C I
VBB
=
−350 µA, V
EE
=
−5.7V
V
DIFF
Input Voltage 150 mV −55˚C to Required for Full Output Swing (Notes 3, 4, 5)
Differential +125˚C
V
CM
Common Mode VCC− 2.0 VCC− 0.5 V −55˚C to (Notes 3, 4, 5)
Voltage +125˚C
V
IH
Single-Ended −1165 −870 mV −55˚C to Guaranteed HIGH Signal for All (Notes 3, 4, 5, 6)
Input High Voltage +125˚C Inputs (with D
n
tied to VBB)
V
IL
Single-Ended −1830 −1475 mV −55˚C to Guaranteed LOW Signal for All (Notes 3, 4, 5, 6)
Input Low Voltage +125˚C Inputs (with D
n
tied to VBB)
I
IH
Input HIGH Current 50 µA 0˚C to V
IN
=
V
IH (Max),Da–De
=
V
BB
,
+125˚C D
a–De
=
V
IL (Min)
(Notes 3, 4, 5)
70 µA −55˚C
I
CBO
Input Leakage −10 µA −55˚C to V
IN
=
V
EE,Da–De
=
V
BB
, (Notes 3, 4, 5)
Current +125˚C D
a–De
=
V
IL (Min)
I
EE
Power Supply −65 −25 mA −55˚C to Da–D
e
=
V
BB
, (Notes 3, 4, 5)
Current +125˚C D
a–De
=
V
IL (Min)
Note 3: F100K 300 Seriescoldtemperature testing is performed by temperature soaking (to guarantee junction temperature equals −55˚C), then testing immediately
without allowing for the junction temperature to stabilize due to heat dissipation after power-up. This provides “cold start” specs which can be considered a worst case
condition at cold temperatures.
Note 4: Screen tested 100%on each device at −55˚C, +25˚C, and +125˚C, Subgroups 1, 2, 3, 7, and 8.
Note 5: Sample tested (Method 5005, Table I) on each manufactured lot at −55˚C, +25˚C, and +125˚C, Subgroups A1, 2, 3, 7, and 8.
Note 6: Guaranteed by applying specified input condition and testing V
OH/VOL
.
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