NPC CF5009AL6 Datasheet

6 µ

=

=

=

C

C

C

SM5009 series

NIPPON PRECISION CIRCUITS INC.

Crystal Oscillator Module ICs

OVERVIEW

The SM5009 series are crystal oscillator module ICs, that incorporate circuits to limit oscillator-stage current,
controlling total current consumption. High-frequency capacitors are built-in, eliminating the need for external
components to make a stable fundamental-harmonic oscillator.

FEATURES

Capacitors C

■

■

Standby function

■

A typ (V

(SM5009AL × S)

■

Power-save pull-up resistor built-in
(SM5009AL × S)

■

Inverter amplifier feedback resistor built-in

■

16 mA (V
(SM5009AK × S, AL × S, AN × S, CN × S)

, C

built-in

G

D

5 V) low standby current

DD

4.5 V) drive capability

DD

4 mA (V

■

4.5 V) drive capability

DD

(SM5009AH × S)

■

Output three-state function

2.25 to 5.5 V supply voltage (CF5009AL × )

■

■

2.7 to 5.5 V supply voltage
(SM5009AH × S, AL × S, AN × S, CN × S)

■

Oscillator frequency output (f
f

/16, f

O

8-pin SOP (SM5009 ××× S)

■

■

Chip form (CF5009 ××× )

/32 determined by internal connection)

O

, f

/2, f

O

O

O

/4, f

/8,

O

SERIES CONFIGURATION

Version

SM5009AH1S 2.7 to 5.5 f
SM5009AH2S 2.7 to 5.5 f
SM5009AH3S 2.7 to 5.5 f
SM5009AH4S 2.7 to 5.5 f
SM5009AK1S 4.5 to 5.5 f
SM5009AK2S 4.5 to 5.5 f
SM5009AN1S 2.7 to 5.5 f
SM5009AN2S 2.7 to 5.5 f
SM5009AN3S 2.7 to 5.5 f
SM5009AN4S 2.7 to 5.5 f
SM5009AN5S 2.7 to 5.5 f

SM5009AN6S 2.7 to 5.5 f
SM5009CN1S 2.7 to 5.5 f
SM5009CN2S 2.7 to 5.5 f

SM5009AL1S 2.7 to 5.5 f

SM5009AL2S 2.7 to 5.5 f

SM5009AL3S 2.7 to 5.5 f

SM5009AL4S 2.7 to 5.5 f

SM5009AL5S 2.7 to 5.5 f

SM5009AL6S 2.7 to 5.5 f

1. Chip form devices have designation CF5009

2. SM5009AH
SM5009AK

3. SM5009AH
SM5009CN

4. SM5009AN

Note: Recommended operating frequency is not the guaranteed value but is measured using NPC’s standard crystal.

voltage

[V]

×

S: V

DD

×

S: Ta = –20 to +85

×

S, AN

×

S: Ta = –10 to +70

×

S, AL

Supply

1, 2

Output

frequency

O

/2 15 16 15 30 6 10 TTL CMOS No

O

/4 15 16 15 30 6 10 TTL CMOS No

O

/8 15 16 15 30 6 10 TTL CMOS No

O

O

/2 – – 15 40 6 10 TTL TTL No

O

O

/2 30 40 50 40 6 10 TTL CMOS No

O

/4 30 40 50 40 6 10 TTL CMOS No

O

/8 30 40 50 40 6 10 TTL CMOS No

O

/16 30 40 50 40 6 10 TTL CMOS No

O

/32 30 40 50 40 6 10 TTL CMOS No

O

O

/2 15 30 50 30 6 10 TTL CMOS No

O

O

/2 30 40 50 40 6 10 CMOS CMOS Yes

O

/4 30 40 50 40 6 10 CMOS CMOS Yes

O

/8 30 40 50 40 6 10 CMOS CMOS Yes

O

/16 30 40 50 40 6 10 CMOS CMOS Yes

O

/32 30 40 50 40 6 10 CMOS CMOS Yes

O

= 4.5 to 5.5V

×

S, AL

×

S: Ta = –20 to +80

°

×

S: Ta = –20 to +80

°

3V operating 5V operating

Output

Recommended

load

(max)

[pF]

15 16 15 30 6 10 TTL CMOS No

30 40 50 40 6 10 TTL CMOS No

15 30 50 30 6 10 TTL CMOS No

30 40 50 40 6 10 CMOS CMOS Yes

°

operating

frequency

3

range

[MHz]

– – 15 40 6 10 TTL TTL No

×××

.

°

C

Output

load

(max)

[pF]

Recommended

operating

frequency

4

range

[MHz]

Built-in

capacitance

C

C

G

[pF]

D

[pF]

Input

level

Output

duty
level

Standby
function

ORDERING INFORMATION

De vice Pack ag e

SM5009

×××

S 8-pin SOP

CF5009

×××

–1 Chip form

NIPPON PRECISION CIRCUITS—1

PACKAGE DIMENSIONS

(Unit:mm)

8-pin SOP

SM5009 series

4.4 0.2

6.2 0.3

•

0.15

+

−

0.05

0.1

0.695typ

1.5 0.1

1.27

5.2 0.3

0.4 0.1

0.10

0.05 0.05

M

0.12

0.4 0.2

0 to 10

NIPPON PRECISION CIRCUITS—2

SM5009 series

PAD LAYOUT

(Unit: µ m)

VDD

Y

(0,0)

Chip size: 0.92
Chip thickness: 300 ± 30 µm
Chip base: V

XT VSS

INH XT

X

×

DD

Q

HA5009

1.22 mm

level

(920,1220)

PINOUT

(Top view)

INH

XT

XT

VSS

1

2

3

4

009

8

7

NC

NC

6

Q

5

VDD

PIN DESCRIPTION and PAD DIMENSIONS

Number Name I/O Description

1INH
2 XT I Amplifier input.

3XTO Amplifier output. 57 5 21 2
4 VS S – Ground 766 212

5QO
6 N C – No connection – –

7 N C – No connection – –
8 VD D – S upply voltage 162 1062

Output state control input. High impedance when LOW. In the case of the

I

SM5009AL

Output. Output frequency (f
internal connection

×

S, the oscillator stops and Power-saving pull-up resistor built in.

Cr ystal oscillator connection pins.
Cr ystal oscillator connected between XT and XT

, f

/2, f

/4, f

/8, f

/16, f

O

O

O

O

/32) determined by

O

O

Pad dimensions [µm]

XY

195 212
385 212

765 1062

BLOCK DIAGRAM

XT

CG CD

XT

INH

VSSVDD

Rf

1/2 1/21/2 1/2 1/2

Q

NIPPON PRECISION CIRCUITS—3

SPECIFICATIONS

Absolute Maximum Ratings

V

= 0 V

SS

Parameter Symbol Condition Rating Unit

Supply voltage range V
Input voltage range V
Output voltage range V
Ope rating temperature range T

Storage temperature range T

Output current I
Po w er dissipation P

OUT

DD

IN

OUT

opr

stg

D

SM5009 series

−

0.5 to 7.0 V

−

0.5 to V

−

0.5 to V

Chip form
8-pin SOP

8-pin SOP 500 m W

+ 0.5 V

DD

+ 0.5 V

DD

−

40 to 85

−

65 to 150

−

55 to 125

25 mA

°

°

C

C

Recommended Operating Conditions

V

= 0 V

SS

Parameter Symbol Series Condition

f

≤

30MHz 4.5 – 5.5

f

≤

16MHz 2.7 – 3.3

≤

40MHz 4.5 – 5.5 V

≤

40MHz 2.7 – 5.5 V

≤

30MHz 2.7 – 5.5 V

Chip form

8-pin SOP

f

≤

30MHz, 4.5V

≤

16MHz, 2.7V ≤ VDD ≤ 3.6V

f

≤

30MHz

f
30MHz < f ≤ 40MHz

Chip form

8-pin SOP

f

≤

30MHz, 2.7V ≤ VDD < 4.5V

f

≤

30MHz, 4.5V ≤ VDD ≤ 5.5V

Chip form

8-pin SOP

Supply voltage V

Input voltage V

Ope rating temperature T

AH series

AK series f
AN series f

CN series f

DD

AL series

All series V

IN

AH series

AK series

AN series

OPR

CN series

AL series

Rating

min typ max

f

≤

40MHz 2.7 – 5.5

f

≤

30MHz 2.3 – 2.7

f

≤

20MHz 2.25 – 2.75

f

≤

40MHz 2.7 – 5.5

f

≤

14.4MHz 2.4 – 2.7
–V

≤

V

≤

5.5V

DD

f ≤ 40MHz, 2.7V ≤ VDD < 4.5V

≤

40MHz, 4.5V ≤ VDD ≤ 5.5V

f
f

≤

40MHz, 2.7V ≤ VDD < 4.5V

f ≤ 40MHz, 4.5V ≤ VDD ≤ 5.5V

≤

30MHz, 4.5V ≤ VDD ≤ 5.5V

f

≤

40MHz, 2.7V ≤ VDD ≤ 5.5V

f
f ≤ 30MHz, 2.3V ≤ VDD ≤ 2.7V

SS

−

40 –

−

20 –

−

40 –

−

20 –

−

20 –

−

40 –

−

20 –

−

20 –

−

40 –

−

10 –

−

40 –

−

40 –

−

20 –

f ≤ 20MHz, 2.25V ≤ VDD ≤ 2.75V− 20 –

≤

40MHz, 2.7V ≤ VDD ≤ 5.5V

f
f

≤

30MHz, 2.7V ≤ VDD ≤ 5.5V

−

20 –

−

40 –

f ≤ 14.4MHz, 2.4V ≤ VDD ≤ 2.7V− 20 –

Unit

V

V

DD

+

85

+

80

+

85

+

80

+

80

+

85

+

80

+

80

+

85

+

70

+

85

+

85

+

80

+

80

+

80

+

85

+

80

V

°

C

°

C

°

C

°

C

°

C

NIPPON PRECISION CIRCUITS—4

SM5009 series

Electrical Characteristics

5009AH series

3 V operation: VDD = 2.7 to 3.3 V, VSS = 0 V, Ta = −20 to 80 °C unless otherwise noted.

Parameter Sy mbo l Condition

HIGH-level output voltage V
L O W-level output voltage V

Output leakage current I

HIGH-level input voltage V
L O W -level input voltage V

Q: Measurement cct 1, IOH = 2 mA 2.2 – – V

OH

Q: Measurement cct 1, IOL = 2 mA – – 0.4 V

OL

Q: Measurement cct 2, IN H = LOW, VOH = V

Z

Q: Measurement cct 2, IN H = LOW, VOL = V
INH 2.0 – – V

IH

INH – – 0.3 V

IL

INH = open, Measurement cct 3,

Current consumption I

load cct 2, CL = 15 pF,

DD

16 MHz crystal oscillator

DD

SS

SM5009AH1S
CF5009AH1

SM5009AH2S
CF5009AH2

SM5009AH3S
CF5009AH3
SM5009AH4S

Rating

min typ max

––10
––10

– 4.5 10

–37

– 1.5 3

CF5009AH4

INH

pull-up resistance R

Negative resistance

Measurement cct 4, VDD = 3 V, INH = V

UP

−

RLVDD = 3 V, Ta = 25 °C, 16 MH z – –450 –

SS

40 – 200 k

Feedback resistance RfMeasurement cct 5 0.4 – 1.1 M

Built-in capacitance

C

G

Design value, determined by the internal wafer pattern

C

D

5.58 6 6.42 pF

9.3 10 10.7 pF

Unit

µA

mA

Ω

Ω

Ω

5 V operation: VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted.

Parameter Sy mbo l Condition

HIGH-level output voltage V
L O W-level output voltage V

Output leakage current I

HIGH-level input voltage V
L O W -level input voltage V

Q: Measurement cct 1, IOH = 4 mA 4.0 – – V

OH

Q: Measurement cct 1, IOL = 4 mA – – 0.4 V

OL

Q: Measurement cct 2, IN H = LOW, VOH = V

Z

Q: Measurement cct 2, IN H
INH 2.0 – – V

IH

INH – – 0.8 V

IL

= LOW, VOL = V

DD

SS

SM5009AH1S
CF5009AH1

SM5009AH2S
CF5009AH2

SM5009AH3S

Current consumption I

INH = open, Measurement cct 3,
load cct 2, C

DD

30 MHz crystal oscillator

= 15 pF,

L

CF5009AH3
SM5009AH4S
CF5009AH4

INH

pull-up resistance R

Negative resistance

Measurement cct 4, VDD = 5 V, INH = V

UP

−

RLVDD = 5 V, Ta = 25 °C, 30 MH z – –340 –

SS

Feedback resistance RfMeasurement cct 5 0.4 – 1.1 M

C

Built-in capacitance

G

Design value, determined by the internal wafer pattern

C

D

Rating

min typ max

––10
––10

–920

–613

–49

40 – 200 k

5.58 6 6.42 pF

9.3 10 10.7 pF

Unit

µA

mA

Ω

Ω

Ω

NIPPON PRECISION CIRCUITS—5

SM5009 series

5009AK series

VDD = 4.5 to 5.5 V, VSS = 0 V, Ta = −40 to 85 °C unless otherwise noted.

Parameter Sy mbo l Condition

HIGH-level output voltage V
L O W-level output voltage V

Q: Measurement cct 1, IOH = 16 mA 4.0 – – V

OH

Q: Measurement cct 1, IOL = 16 mA – – 0.4 V

OL

Q: Measurement cct 2, IN H = LOW, VOH = V

Output leakage current I

HIGH-level input voltage V
L O W -level input voltage V

Z

Q: Measurement cct 2, IN H = LOW, VOL = V
INH 2.0 – – V

IH

INH – – 0.8 V

IL

DD

SS

min typ max

––10
––10

SM5009AK1S – 12 26

Rating

Current consumption I

INH = open, Measurement cct 3,
load cct 1, CL = 15 pF,

DD

40 MHz crystal oscillator,
Ta = –20 to +80 °C

CF5009AK1 – 12 26
SM5009AK2S – 8 17
CF5009AK2 – 8 17

pull-up resistance R

INH
Negative resistance

Measurement cct 4, VDD = 5 V, INH = V

UP

−

RLVDD = 5 V, Ta = 25 °C, 40 MH z – –210 –

SS

40 – 200 k

Feedback resistance RfMeasurement cct 5 0.4 – 1.1 M

Built-in capacitance

C

G

Design value, determined by the internal wafer pattern

C

D

5.58 6 6.42 pF

9.3 10 10.7 pF

Unit

µA

mA

Ω

Ω

Ω

NIPPON PRECISION CIRCUITS—6