Temperature range
Quick charging temperature
Discharge temperature
Mechanical Characteristics
General Information
–25 to +55
+5 to +45
–20 to +65
UnitDimensions (mm)
(H x W x D)
Transceiver with fixed battery152X54X32235197
Weight (g)
typical
Volume
(cm
3
)
Original 42/96
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NHN–3N
After Sales
General Information
Technical Documentation
Electrical Specifications
Transceiver General Features
ParameterNotes
Cellular systemNMT900
TX frequency band890.0125 – 914.9875 MHz
RX frequency band935.0125 – 959.9875 MHz
Duplex spacing45 MHz
Number of RF channels1000 (+999 interleaved channels)
Channel spacing25 / 12.5 kHz
Maximum output power0.55W
Method of frequency synthesisDual direct PLL
Power Supply Voltage4.5...6.8 V
Transmitter Branch
Frequency band890.0125 – 914.9875 MHz
Output RF power0.1 or 0,55 W
Spurious signals (TX ON)
Spurious signals (STANDBY)
Modulation methodFM
Deviation4.7 kHz max
Deviation with supervisory signal5.0 kHz max
FFSK deviation 1200 Hz (”1”)
1800 Hz (”0”)
Harmonic distortion< 5 %
Audio Frequency response300–500 Hz
500–2000 Hz
2–3 KHz
pre–emphasis
< 0.25 mW, f = 100kHz – 1GHz
< 1 mW, f = 1GHz – 4GHz
< 2 nW, f = 100kHz – 1GHz
< 20 nW, f = 1GHz – 4GHz
2800 Hz dev. +/– 400 Hz
4200 Hz dev. +/– 600 Hz
+1–3 dB
+/– 1 dB
+1–3 dB
6 dB/Oct
Adjacent Channel Power< –37 dBm
Audio Inter–modulation products< –20 dB
Residual Modulation linear
psophometric
Audio Muting> 40 dB
< –20 dB (peak)
< –40 dB (rms)
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Original 42/96
After Sales
ratio
ratio
NHN–3N
Technical Documentation
Compander SW enabledcompression
dynamic range
Output RF power0,55 W
Number of power levels2
2:1
0 – –50 dB +/– 1 dB
General Information
Receiver Branch
Frequency band935.0125 – 959.9875 MHz
Sensitivity–113 dBm (20 dB SINAD psoph. )
Adjacent Channel Selectivity> 67 dB
Spurious Response Rejection> 67 dB
Inter–modulate Rejection> 67 dB
Blocking> 87 dB
Spurious signals (TX OFF)
< 2 nW, f = 100kHz – 1GHz
< 20 nW, f = 1GHz – 4GHz
Audio Inter–modulation Products< –20 dB (1600 Hz)
AM suppression> 30 dB
Hum and Noise linear
phopsometric
Audio Frequency response 300–500 Hz
500–2000 Hz
2–3 KHz
de–emphasis
Harmonic distortion<5 %
Audio Muting> 50 dB
Expander SW enabledcompression
dynamic range
RSSI dynamic range60 dB
Frequency stability+/– 5 ppm
< –20 dB
< –40 dB
+1–3 dB
+/– 1 dB
+1–3 dB
6 dB/Oct
1:2
0 – –50 dB +/– 1 dB
Synthesizer TX Band
Transmitted frequency difference from BS in
conversation mode
Frequency range890.0125 – 914.9875 MHz
Output level1dBm +/– 3 dB
+/– 250 Hz
Original 42/96
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NHN–3N
After Sales
General Information
Phase Noise< –1 16 dBc/Hz (@25KHz)
Residual deviation< 50 Hz
Spurious emissions< –74 dBc
Settling Time CHN–>CHN+?< 35 ms
Technical Documentation
Synthesizer RX Band
Frequency Tolerance at Startup+/– 2.5 ppm
Frequency range935.0125 – 959.9875 MHz
Output level1 dBm +/– 3 dB
Phase Noise< –118 dBc/Hz (@25KHz)
Residual deviation< 50 Hz
Spurious emissions< –80 dBc
Settling Time CHN–>CHN+?< 35 ms
Page 1 – 8
Original 42/96
After Sales
NHN–3N
Technical Documentation
Transceiver Overview
Introduction
The NHN–3N is a small and light handportable Cellular phone for the
NMT900 system..
The transceiver consist of four modules: JR8 RF/system module, fixed battery, display and mechanics.
The transceiver has a fixed antenna.
The user communicates with the phone via LCD–display, keyboard, and
some audible tones.
Circuit Description
The transceiver electronics consist of Transceiver module PCB. The display
is connected to the transceiver module with a flexible connector . The system
and RF submodules are interconnected with PCB wiring. The unit can be
connected to charger with a charger connector.
General Information
The RF block is designed for a hand portable phone, which operates in
NMT900 systems. The purpose of the RF module is to receive and demodulate the radio frequency signal from the base station, and to transmit a modulated RF signal to the base station. RF parts are designed for 0.55W output
power.
Interconnection Diagram
DISPLAY
2
BATTERY
BBF–3
MIC
63
RADIO MODULE
JR8
BUZZER
22
Original 42/96
229
CHARGKEYPAD
EAR
Page 1 – 9
NHN–3N
R
After Sales
General Information
Block Diagram
The NHN–3N consist of a single pcb JR8. JR8 consist of 2 submodules,
BASEBAND and RF. BASEBAND consists of four functional blocks: PWRU
(MUUMI), CTRLU (MCU), UIF, AUDIO (NIPA) and DISPLAY . RF consists of
3 functional blocks: RX, SYNT, TX.
DISPLAY
RESET
SIS
RESET
EEPROM
Technical Documentation
XMIC
VBAT
MUUMI
RESET
M2BUS
XPWROFF
KEYPAD
XEA
MICEARBUZZER
CLK
MCUNIPA
RESET
DAF
RX
AFC
CLK
MOD
3.6864MHzXPWRON
TXC
RF CONTROL
TX
SYNTE
Page 1 – 10
DUPLEXER
RF BLOCKBASEBAND BLOCK
Original 42/96
After Sales
NHN–3N
Technical Documentation
Baseband–Block
PWRU
The power block provides the supply voltages for the phone, and also includes the charging electronics.
CTRLU
Main Features of the CTRLU block:
– system control
– communication control
– authentication
– power up/down control
– battery monitoring
– production testing
– RF–controls
– UIF–interface
– M2BUS interface.
The RX module receives and demodulates the radio frequency signal from
the base station.
SYNT
The transmitter synthesizer generates a frequency modulated RF signal for
the transmitter section. The transmission frequency is generated by a
phase–locked loop (PLL). he synthesizer circuit contains VCO, synthesizer
logic, and loop filter.
The receiver synthesizer operates in the same way as the corresponding circuit in the TX synthesizer . The modulation line is of course missing. The first
injection frequency is supplied to the receiver module.
TX
The Transmitter module generates and amplifies the RF signal to be transmitted to the base station.
Original 42/96
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NHN–3N
After Sales
VCS
General Information
Power Distribution
VBAT
VREF
VL
VL2
VL3
VA
RECEIVER
VCCR
VSYN
Technical Documentation
SYNTHESIZER
TRANSMITTER
VRF
PWRU
CTRLU
AUDIO
UIF
VBAT
LCD
DISPLAY
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After Sales
NHN–3N
Technical Documentation
General Information
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