Nokia NSB-7 Service Manual

Download

Page 1

Programmes After Market Services

Technical Documentation

[NMP Part No.0275454]

NSB-7 Cellular Phones

Issue 1 06/00

Page 2

Programmes After Market Services

Technical Documentation

Amendment Record Sheet

Amendment No Date Inserted By Comments

Issue 1 06/00

Page 3

Programmes After Market Services

Contents:

Technical Documentation

NSB-7 Overall Manual Contents

Section 1: Foreword

Section 2: General Information

Section 3: System Module

Section 4: UI Module

Section 5: Product Variants

Section 6: Service Software Instructions

Section 7: Service Tools

Section 8: Disassembly/Troubleshooting Instructions

Section 9: Non-serviceable Accessories

Section 10: Schematic Diagrams

Issue 1 06/00

Page 4

Programmes After Market Services

This document is intended for use by qualified service personnel only.

Company Policy

Our policy is of continuous development; details of all technical modifications will be included with service bulletins.

While every endeavour has been made to ensure the accuracy of this document, some errors may exist. If any errors are found by the reader, NOKIA MOBILE PHONES Ltd. should be notified in writing.

Please state:

Technical Documentation

IMPORTANT

Title of the Document + Issue Number/Date of publication Latest Amendment Number (if applicable) Page(s) and/or Figure(s) in error

Please send to: Nokia Mobile Phones Ltd.

PAMS Technical Documentation PO Box 86 FIN-24101 SALO Finland

Issue 1 06/00

Page 5

Programmes After Market Services

Technical Documentation

Warnings and Cautions

Please refer to the phone's user guide for instructions relating to operation, care and maintenance including important safety information. Note also the following:

Warnings:

1. CARE MUST BE TAKEN ON INSTALLATION IN VEHICLES FITTED WITH ELECTRONIC ENGINE MANAGEMENT SYSTEMS AND ANTI-SKID BRAKING SYSTEMS. UNDER CERTAIN FAULT CONDITIONS, EMITTED RF ENERGY CAN AFFECT THEIR OPERATION. IF NECESSARY, CONSULT THE VEHICLE DEALER/ MANUFACTURER TO DETERMINE THE IMMUNITY OF VEHICLE ELECTRONIC SYSTEMS TO RF ENERGY.

2. THE HANDPORTABLE TELEPHONE MUST NOT BE OPERATED IN AREAS LIKELY TO CONTAIN POTENTIALLY EXPLOSIVE ATMOSPHERES EG PETROL STATIONS (SERVICE STATIONS), BLASTING AREAS ETC.

3. OPERATION OF ANY RADIO TRANSMITTING EQUIPMENT, INCLUDING CELLU-

Cautions:

1. Servicing and alignment must be undertaken by qualified personnel only.

2. Ensure all work is carried out at an anti-static workstation and that an anti-

3. Ensure solder, wire, or foreign matter does not enter the telephone as dam-

4. Use only approved components as specified in the parts list.

5. Ensure all components, modules screws and insulators are correctly re-fit-

LAR TELEPHONES, MAY INTERFERE WITH THE FUNCTIONALITY OF INADEQUATELY PROTECTED MEDICAL DEVICES. CONSULT A PHYSICIAN OR THE MANUFACTURER OF THE MEDICAL DEVICE IF YOU HAVE ANY QUESTIONS. OTHER ELECTRONIC EQUIPMENT MAY ALSO BE SUBJECT TO INTERFERENCE.

static wrist strap is worn.

age may result.

ted after servicing and alignment. Ensure all cables and wires are repositioned correctly.

Issue 1 06/00

Page 6

Programmes After Market Services

Technical Documentation

This Page Intentionally Blank

Issue 1 06/00

Page 7

Programmes After Market Services

NSB-7 Series Transceivers

General Information

Issue 1 06/00 ãNokia Mobile Phones Ltd.

Page 8

NSB-7

General Information PAMS Technical Documentation

Page No

General Information................................................................................................................1

Product Selection..................................................................................................................................... 4

Hand portables ...................................................................................................................................... 4

Desktop Option ...................................................................................................................................... 5

Express Car Kit (CARK-124) Option for Americas ....................................................................... 6

Product and Module List ....................................................................................................................... 7

Technical Specifications ........................................................................................................................ 8

General Specifications of Transceiver NSB-7 ............................................................................... 8

Page 2 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 9

NSB-7

PAMS Technical Documentation General Information

List of Figures

Page No

Fig 1 Hand portables..................................................................................................................................... 4

Fig 2 Desktop option ..................................................................................................................................... 5

Fig 3 Express Car Kit (CARK-124).............................................................................................................. 6

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 3

Page 10

NSB-7

General Information PAMS Technical Documentation

Product Selection

Hand portables

The NSB-7 is a single band hand portable mobile telephone for the GSM1900 networks

ACP-7E

ACP-8E ACP-8K

ACP-7C ACP-7U

ACP-8X

ACP-8U ACP-8C

ACP-8A

10.

ACP-7H ACP-7X

ACP-7A

Figure 1: Hand portables

Item Name: Type Code: Material Code:

1. Transceiver See Product Variants

2. Standard Battery (Li-ion 650 mAh) BLB-2 0670246

Standard Battery (Li-ion 650 mAh) for Americas BLB-2 0670322

3. AC Travel Charger (Euro plug) 207-253 Vac ACP-7E 0675144

4. AC Travel Charger (US plug) 108-132 Vac ACP-7U 0675143

AC Travel Charger (US plug) 198-242 Vac ACP-7C 0675158

5. AC Travel Charger (UK plug) 207-253 Vac ACP-7X 0675145

AC Travel Charger (UK plug) 180-220 Vac ACP-7H 0675146

6. AC Travel Charger (Australia plug) 216-264 Vac ACP-7A 0675148

7. Performance Travel Charger Euro plug 90-264 Vac ACP-8E 0675195

Performance Travel Charger Korea plug 90-264 Vac ACP-8K 0675199

8. Performance Travel Charger UK plug 90-264 Vac ACP-8X 0675197

9. Performance Travel Charger US plug 90-264 Vac ACP-8U 0675196

Performance Travel Charger China plug 90-264 Vac ACP-8C 0675211

10. Performance Travel Charger Australia plug 90-264 Vac ACP-8A 0675214

Page 4 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 11

NSB-7

PAMS Technical Documentation General Information

Desktop Option

The desktop option allows the user to charge the phone from the mains.

ACP-7E

ACP-8E ACP-8K

ACP-8X

ACP-8U ACP-8C

ACP-8A

10.

ACP-7C ACP-7U

ACP-7H ACP-7X

ACP-7A

Figure 2: Desktop option

Item Name: Type Code: Material Code:

1. Transceiver See Product Variants

2 Desk stand DCV-1B 0675220

3. AC Travel Charger (Euro plug) 207-253 Vac ACP-7E 0675144

4. AC Travel Charger (US plug) 108-132 Vac ACP-7U 0675143

AC Travel Charger (US plug) 198-242 Vac ACP-7C 0675158

5. AC Travel Charger (UK plug) 207-253 Vac ACP-7X 0675145

AC Travel Charger (UK plug) 180-220 Vac ACP-7H 0675146

6. AC Travel Charger (Australia plug) 216-264 Vac ACP-7A 0675148

7. Performance Travel Charger Euro plug 90-264 Vac ACP-8E 0675195

Performance Travel Charger Korea plug 90-264 Vac ACP-8K 0675199

8. Performance Travel Charger UK plug 90-264 Vac ACP-8X 0675197

9. Performance Travel Charger US plug 90-264 Vac ACP-8U 0675196

Performance Travel Charger China plug 90-264 Vac ACP-8C 0675211

10. Performance Travel Charger Australia plug 90-264 Vac ACP-8A 0675214

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 5

Page 12

NSB-7

General Information PAMS Technical Documentation

Express Car Kit (CARK-124) Option for Americas

Figure 3: Express Car Kit (CARK-124)

Item Name: Type Code: Material Code:

Express Car Kit for Americas (Retail Pack) CARK-124 0080372

1. Transceiver (Not included, see Product Variants)

2. Pocket Clip SKB-2 0720218

3. Swivel Mount HHS-12 0620054

4. Hands Free Microphone HFM-8 0690016

5. Hands Free Cigarette Lighter Charger PPH-1 0675182

Page 6 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 13

NSB-7

PAMS Technical Documentation General Information

Product and Module List

Unit/Type: Product Code:

Transceiver NSB-7 See Product Variants

Standard Battery BLB-2 (Li-ion 650 mAh) 0670246

Standard Battery BLB-2 (Li-ion 650 mAh) for Americas 0670322

AC Travel Charger ACP-7E (EURO) 207-253 Vac 0675144

AC Travel Charger ACP-7U (US) 108-132 Vac 0675143

AC Travel Charger ACP-7C (US) 198-242 Vac 0675158

AC Travel Charger ACP-7X (UK) 207-253 Vac 0675145

AC Travel Charger ACP-7H (UK) 180-220 Vac 0675146

AC Travel Charger ACP-7A (AUS) 216-264 Vac 0675148

Performance Travel Charger ACP-8E (EURO) 90-264 Vac 0675195

Performance Travel Charger ACP-8K (KOREA) 90-264 Vac 0675199

Performance Travel Charger ACP-8X (UK) 90-264 Vac 0675197

Performance Travel Charger ACP-8U (US) 90-264 Vac 0675196

Performance Travel Charger ACP-8C (CHINA) 90-264 Vac 0675211

Performance Travel Charger ACP-8A (AUS) 90-264 Vac 0675214

Headset HDC-5 0694059

Loopset LPS-3 0630244

Pocket Clip SKB-2 0720218

Desk Stand DCV-1B 0675220

Swivel Mount HHS-12 0620054

HF Microphone HFM-8 0690016

Plug & Play HF Cigarette Lighter Charger PPH-1 0675182

Cigarette Lighter Charger LCH-8 0675231

Cigarette Lighter Charger LCH-9 0675120

Carrying Case CBK-3V 0272237

Carrying Case CBK-3H 0272236

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 7

Page 14

NSB-7

General Information PAMS Technical Documentation

Technical Specifications

General Specifications of Transceiver NSB-7

Parameter Unit

Cellular System GSM1900

RX frequency band 1930 ...1990 MHz

TX frequency band 1850 ...1910 MHz

Output power +0 ...+29 dBm / 1.0 mW ...1 W

Duplex spacing 80 MHz

Number of RF channels 299

Channel spacing 200 kHz

Number of TX power levels 16

Sensitivity, static channel -102 dBm

Frequency error, static channel < 0.1 ppm

RMS phase error < 5.0 ο

Peak phase error < 20.0 ο

Page 8 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 15

Programmes After Market Services

NSB-7 Series Transceivers

System Module

Issue 1 06/00 ãNokia Mobile Phones Ltd.

Page 16

NSB-7

System Module PAMS Technical Documentation

Page No

System Module ........................................................................................................................1

Transceiver NSB-7 ................................................................................................................................... 6

Introduction ........................................................................................................................................... 6

Operational Modes ............................................................................................................................ 6

Interconnection Diagram ................................................................................................................... 7

System Module......................................................................................................................................... 8

Baseband Module ................................................................................................................................. 8

Block Diagram..................................................................................................................................... 8

Technical Summary ........................................................................................................................... 9

Technical Specifications ...................................................................................................................10

Absolute Maximum Ratings ........................................................................................................ 10

DC Characteristics .......................................................................................................................... 10

External and Internal Signals and Connections..................................................................... 10

DC (charger) connector ...............................................................................................................10

Service Connector .........................................................................................................................11

Battery connector .........................................................................................................................11

SIM card connector ......................................................................................................................12

RTC backup battery ......................................................................................................................12

Functional Description ......................................................................................................................13

Power Distribution.......................................................................................................................... 13

Battery Interface............................................................................................................................. 13

Battery charging ...........................................................................................................................14

Startup Charging ..........................................................................................................................14

Battery Overvoltage Protection ................................................................................................15

Battery Removal During Charging ...........................................................................................16

PWM .................................................................................................................................................16

Battery Identification ..................................................................................................................16

Battery Temperature ....................................................................................................................18

Supply Voltage Regulators .........................................................................................................19

Switched Mode Supply VSIM ....................................................................................................21

Power Up and Power Down ......................................................................................................... 22

Power up with charger ................................................................................................................22

Power Up with the Power Switch (PWRONX) ......................................................................23

Power Up by RTC ...........................................................................................................................24

Power Up by IBI .............................................................................................................................24

Power Down ...................................................................................................................................24

Modes of Operation ....................................................................................................................... 25

Acting Dead ....................................................................................................................................25

Active Mode ...................................................................................................................................25

Sleep Mode .....................................................................................................................................25

Charging ..........................................................................................................................................26

Watchdog .......................................................................................................................................26

Audio Control................................................................................................................................... 27

PCM serial interface ....................................................................................................................27

Digital Control ................................................................................................................................. 28

MAD2 WD1 .....................................................................................................................................28

Memories........................................................................................................................................... 37

Page 2 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 17

NSB-7

PAMS Technical Documentation System Module

MAD memory configuration ......................................................................................................37

Memory ...........................................................................................................................................37

Program and Data Memory .......................................................................................................37

Work Memory ................................................................................................................................37

MCU Memory Requirements .....................................................................................................37

MCU Memory Map .......................................................................................................................37

Flash Programming ......................................................................................................................38

COBBA GJP .....................................................................................................................................39

Real time clock ..............................................................................................................................40

RTC backup battery charging ....................................................................................................40

Security ............................................................................................................................................40

Baseband EMC Strategy .............................................................................................................40

Baseband Testing ..........................................................................................................................41

Alignments .....................................................................................................................................41

Baseband Startup for Testing ....................................................................................................42

RF Module............................................................................................................................................... 43

Shielding............................................................................................................................................ 43

Environmental Specifications .........................................................................................................43

Normal and Extreme voltages ...................................................................................................43

Temperature Conditions .............................................................................................................43

Humidity ..........................................................................................................................................43

Vibration ..........................................................................................................................................44

ESD Strength ..................................................................................................................................44

Main Technical Specifications ........................................................................................................44

Maximum Ratings .......................................................................................................................... 44

RF Frequency Plan ..............................................................................................................................45

DC Characteristics ..............................................................................................................................45

Regulators......................................................................................................................................... 45

Control Signals ................................................................................................................................ 46

Power Distribution Diagram ............................................................................................................47

RF Characteristics ...............................................................................................................................48

GSM1900 (PCS1900) ..................................................................................................................... 48

Transmitter Characteristics.......................................................................................................... 48

Output Power Requirements ....................................................................................................... 48

Output RF Spectrum due to modulation.................................................................................. 49

Spectrum due to switching transients...................................................................................... 49

Spurious Emissions (when allocated a channel).................................................................... 49

Spurious Emissions (idle mode) .................................................................................................. 50

Frequency Error and Phase Accuracy ........................................................................................ 50

Receiver Characteristics ...................................................................................................................50

Blocking Requirements ................................................................................................................. 51

AM Suppression Requirements ................................................................................................... 51

Sensitivity, Inter modulation, Spurious Rejection and Emissions..................................... 52

Reference Interference level........................................................................................................ 52

RF Block Diagram ...............................................................................................................................53

Frequency synthesizer .......................................................................................................................54

Receiver .................................................................................................................................................55

Transmitter ...........................................................................................................................................56

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 3

Page 18

NSB-7

System Module PAMS Technical Documentation

AGC strategy ........................................................................................................................................57

AFC function ........................................................................................................................................57

DC Compensation ...............................................................................................................................58

Parts List of RB9 (EDMS Issue 5.3) (Code: 0201512)................................................................ 59

Schematic Diagrams: RB9 (at the back of the binder)

Circuit Diagram of Power Supply (Version 05.21 Edit 64) for layout 5 ............................... A-1

Circuit Diagram of CPU Block (Version 05.21 Edit 45) for layout 5 ..................................... A-2

Connection between RF and Baseband modules (Version 05.21 Edit 37) for layout 5... A-3

Baseband Block Interconnections (Version 05.21 Edit 40) for layout 5 .............................. A-4

Circuit Diagram of MAD Block (Version 05.21 Edit 27) for layout 5 .................................... A-5

Circuit Diagram of RF Block (Version 05.21 Edit 132) for layout 5 ...................................... A-6

Circuit Diagram of UIF (Version 05.21 Edit 36) for layout 5................................................... A-7

Circuit Diagram of Audio and RFI (Version 05.21 Edit 72) for layout 5 .............................. A-8

Circuit Diagram of IR Module (Version 05.21 Edit 23) for layout 5 ..................................... A-9

Layout Diagram of RB9 -Top (Version 05.21)............................................................................A-10

Layout Diagram of RB9 - Bottom (Version 05.21)................................................................... A-10

Testpoints of RB9 - Top (Version 05.21) .....................................................................................A-11

Testpoints of RB9 - Bottom (Version 05.21)..............................................................................A-12

RF Testpoints for RB9 - Circuit Diagram (Version 05.21 Edit132 ) .....................................A-13

RF Testpoints of RB9 - Layout (Version 05.21) .........................................................................A-14

Page 4 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 19

NSB-7

PAMS Technical Documentation System Module

List of Figures

Page No

Fig 1 Block Diagram ...................................................................................................................................... 8

Fig 2 Block Diagram of Power Distribution ............................................................................................ 13

Fig 3 Charging Block Diagram.................................................................................................................... 14

Fig 4 Output Overvoltage Protection (in principle; not in time scale) ........................................... 15

Fig 5 Output Overvoltage Protection When Battery Removed (in principle)................................ 16

Fig 6 BSI connections for all battery types ............................................................................................ 17

Fig 7 SIMCardDetX Detection Levels........................................................................................................ 18

Fig 8 Standard Battery BTEMP connection ............................................................................................ 19

Fig 9 Principle of the SMR Power Functions.......................................................................................... 22

Fig 10 Power Up With Charger .................................................................................................................. 23

Fig 11 Power Up With Switch .................................................................................................................... 24

Fig 12 Flash Programming Sequence ....................................................................................................... 39

Fig 13 RF Frequency Plan............................................................................................................................. 45

Fig 14 Power Distribution Diagram .......................................................................................................... 47

Fig 15 RF Block Diagram.............................................................................................................................. 53

Fig 16 Phase Locked Loop............................................................................................................................ 55

Fig 17 Power Control Loop Diagram......................................................................................................... 57

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 5

Page 20

NSB-7

System Module PAMS Technical Documentation

Transceiver NSB-7

Introduction

The NSB-7 is a single band transceiver unit designed for the GSM1900 networks. It is GSM1900 power class 1 (1W) transceiver.

The transceiver consists of System/RF module (RB9), Display module (UX7) and assembly parts.

The transceiver has a full graphic display and the user interface is based on a jack style UI with two soft keys.

A back mounted antenna is used, there is no connection to an external antenna.

The transceiver has a low leakage tolerant earpiece and an omnidirectional microphone, providing excellent audio quality. The transceiver supports full rate, an enhanced full rate and a half rate speech decoding.

An integrated IR link provides a connection between two NSB-7 transceivers or a transceiver and a PC (internal data), or a transceiver and a printer.

The small SIM (Subscriber Identity Module) card is located under the back cover of the phone.

Operational Modes

There are five different operational modes:

• power off mode

•idle mode

• active mode

• charge mode

• local mode

In the power off mode only the circuits needed for power up are supplied.

In the idle mode circuits are powered down and only the sleep clock is running.

In the active mode all the circuits are supplied with power although some parts might be in idle state part of the time.

The charge mode is effective in parallel with all previous modes. The charge mode itself consists of two different states, i.e. the fast charge and the maintenance mode.

Page 6 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 21

NSB-7

PAMS Technical Documentation System Module

The local mode is used for alignment and testing.

Interconnection Diagram

Keyboard LCD module

14 9

SIM

Antenna

Microphone IR Link Earpiece HF/HS

Battery Radio Module

RB9

2+2

Charger

2824

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 7

Page 22

NSB-7

System Module PAMS Technical Documentation

System Module

Baseband Module

The ASICs are in the uBGA package. Flash and SRAM chips are inside the same package. EEPROM is software emulated with Flash. These changes have decreased the number of I/O between the ICs. Smaller I/O count has made using smaller packages possible

The baseband architecture supports a power saving function called ”sleep mode”. This sleep mode shuts off the VCTCXO, which is used as system clock source for both RF and baseband. During the sleep mode the system runs from a 32 kHz crystal. The phone is waken up by a timer running from this 32 kHz clock supply. The sleeping time is determined by some network parameters. The sleep mode is entered when both the MCU and the DSP are in stand-by mode and the normal VCTCXO clock has been switched off.

The battery charging is controlled by a PWM signal from the CCONT. The PWM duty cycle is determined by a charging software and is fed to the CHAPS charging switch.

Two types of chargers can be connected to the phone. Standard chargers (two wires) provide a coarse supply power, which is switched by the CHAPS for suitable charging voltage and current. Advanced chargers (three wires) are equipped with a control input. Three wire chargers are treated like two wire ones.

Block Diagram

TX/RX SIGNALS

COBBA SUPPLY

COBBA

MAD

MEMORIES

RF SUPPLIES

CCONT

BB SUPPLY

CHAPS

PA SUPPLY

SLEEP CLOCK

32kHz CLK

VBAT

SIM

13MHz CLK

SYSTEM CLOCK

BATTERY

BASEBAND

EXT. AUDIO

HS-connector

Charger connector

Figure 1: Block Diagram

Page 8 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 23

NSB-7

PAMS Technical Documentation System Module

Technical Summary

The baseband module consists of four ASICs; CHAPS, CCONT, COBBA-GJP and MAD2WD1, which take care of the baseband functions of the engine.

The baseband is running from a 2.8V power rail, which is supplied by a power controlling ASIC CCONT. MAD2WD1 supply voltages are VBB and VCORE (V2V), VBB feed I/O pins so that MAD2WD1 is externally fully compatible with old versions. VCORE feed MAD2WD1 internal functions supply voltage; CPU, DSP and system logic. In the CCONT there are 6 individually controlled regulator outputs for RF-section and two outputs for the baseband. In addition there is one +5V power supply output (V5V). The CCONT contains also a SIM interface, which supports both 3V and 5V SIM-cards. A real time clock function is integrated into the CCONT, which utilizes the same 32kHz clock supply as the sleep clock. A backup power supply is provided for the RTC, which keeps the real time clock running when the main battery is removed. The backup power supply is a rechargable battery. The backup time with the battery is ten minutes minimum.

The analog interface between the baseband and the RF section is handled by a COBBA ASIC. COBBA provides A/D and D/A conversion of the in-phase and quadrature receive and transmit signal paths and also A/D and D/A conversions of received and transmitted audio signals to and from the user interface. The COBBA supplies the analog TXC and AFC signals to RF section according to the MAD DSP digital control. Data transmission between the COBBA and the MAD is implemented using serial bus for high speed signalling and for PCM coded audio signals. Digital speech processing is handled by the MAD ASIC. COBBA is a dual voltage circuit, the digital parts are running from the baseband supply VBB and the analog parts are running from the analog supply VCOBBA.

The baseband supports both internal and external microphone inputs and speaker outputs. Input and output signal source selection and gain control is done by the COBBA according to control messages from the MAD. Keypad tones, DTMF and other audio tones are generated and encoded by the MAD and transmitted to the COBBA for decoding. A buzzer and an external vibra alert control signals are generated by the MAD with separate PWM outputs.

EMC shielding is implemented using a metallized plastic frame. On the other side the engine is shielded with PCB grounding. Heat generated by the circuitry will be conducted out via the PCB ground planes.

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 9

Page 24

NSB-7

System Module PAMS Technical Documentation

Technical Specifications

Absolute Maximum Ratings

Parameter Rating

Battery voltage -0.3... 5.3 V

Charger input voltage -5.0... 16V

DC Characteristics

Line Symbol Minimum

Supply battery voltage 3.0 3.9 4.8 V

Battery powerup voltage (HW) 2.9 3.0 3.1 V

Battery cut off voltage (HW) 2.7 2.8 2.9 V (3.1 V SW cutoff)

Regulated baseband supply voltage

Regulated baseband supply current

COBBA analog supply voltage 2.7 2.8 2.85 V

COBBA analog supply current 5 20 100 mA

Regulated 5V supply voltage 4.8 5.0 5.2 V

Regulated 5V supply current 0 1 30 mA

Regulated 5V SIM supply voltage 4.8 5.0 5.2 V

Regulated 5V SIM supply current 3 10 30 mA

Regulated 3V SIM supply voltage 2.8 3.0 3.2 V

2.7 2.8 2.85 V

3 50 125 mA

Typical / Nominal

Maximum Unit / Notes

Regulated 3V SIM supply current 1 6 30 mA

Voltage reference 1.4775 1.5 1.5225 V

External and Internal Signals and Connections

This section describes the external electrical connection and interface levels on the baseband. The electrical interface specifications are collected into tables that covers a connector or a defined interface.

DC (charger) connector

DC (charger) connector is physically integrated in the same component with the acces-

Page 10 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 25

NSB-7

PAMS Technical Documentation System Module

sory interface connector. DC connector has both jack and contact pads for desk stand.

Name Min Typ Max Unit Notes

VIN 0 12 V

0850mA

L_GND 0 0.3 V

Service Connector

Name Parameter Min Typ Max Unit Remark

MBUS Serial clock from

the Prommer

FBUS_RX Serial data from the

Prommer

FBUS_TX Data acknowledge

to the Prommer

GND GND 0 0 V Ground

2.0

logic low logic low

logic low logic high

0.8

2.85

0.8

2.85

0.5

2.85

V Prommer detection and Serial

Clock for synchronous communication

V Receive Data from Prommer to

Baseband

V Transmit Data from Baseband to

Prommer

The service connector is used as a flash programming interface for updating (i.e. re-programming) the flash program memory and an electrical access for services to the engine.

When the flash prommer is connected to the phone supply power is provided through the battery contacts and the phone is powered up with a pulse given to the BTEMP line.

Battery connector

The BSI contact on the battery connector is used to detect when the battery is to be removed to be able to shut down the operations of the SIM card before the power is lost if the battery is removed with power on. The BSI contact disconnects earlier than the supply power contacts to give enough time for the SIM and LCD shut down.

Name Min Typ Max Unit Notes

VBATT 3.0 3.9 4.2 V Battery voltage

BSI 0 2.85 V Battery size indication

Phone has 100kohm pull-up resistor. SIM Card removal detection (Threshold is 2.4V@VBB=2.8V)

68 kohm Battery indication resistor (BLB-2)

kohm Battery indication resistor (service battery)

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 11

Page 26

NSB-7

System Module PAMS Technical Documentation

Name Min Typ Max Unit Notes

BTEMP 0 1.4 V Battery temperature indication

Phone has a 100k (+/-5%) pull-up resistor, Battery package has a NTC pull-down resistor: 47k +/-5%@+25C, B=4050 +/3%

2.1 510330

0 1 kohm Local mode initialization (in production)

BGND 0 0 V Battery ground

V ms

Phone power up by battery (input) Power up pulse width

SIM card connector

The SIM card connector is located on the engine beside the battery pack.

Pin Name Parameter Min Typ Max Unit Notes

4GND GND 0 0 V Ground

3, 5 VSIM 5V SIM Card

3V SIM Card

6 DATA 5V Vin/Vout

3V Vin/Vout

2 SIMRST 5V SIM Card

3V SIM Card

4.8

2.8

4.0 0

2.8 0

4.0

2.8

5.0

3.0

“1” “0” “1” “0”

“1” “1”

5.2

3.2

VSIM

0.5 VSIM

0.5

VSIM VSIM

V Supply voltage

VSIM data

Trise/Tfall max 1us

VSIM reset

1SIMCLKFrequency

Trise/Tfall

3.25 25

MHz ns

SIM clock

RTC backup battery

The RTC block in CCONT needs a power backup to keep the clock running when the phone battery is disconnected. The backup power is supplied from a rechargable Li-ion battery that can keep the clock running ten minutes minimum. The backup battery is charged from the main battery through CHAPS.

Signal Parameter Min Typ Max Unit Notes

VBACK Backup battery charging

from CHAPS

Backup battery charging from CHAPS

VBACK Backup battery supply to

CCONT

3.02 3.15 3.28 V

100 200 500 uA Vout@VBAT-0.2V

23.28V

Page 12 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 27

NSB-7

PAMS Technical Documentation System Module

Signal Parameter Min Typ Max Unit Notes

Backup battery supply to CCONT

Functional Description

Power Distribution

In normal operation the baseband is powered from the phone‘s battery. The battery consists of one Lithium-Ion cell. An external charger can be used for recharging the battery and supplying power to the phone.

The baseband contains parts that control power distribution to whole phone excluding those parts that use continuous battery supply. The battery feeds power directly to the CCONT and UI (buzzer and display and keyboard lights).

The power management circuit CHAPS provides protection against over voltages, charger failures and pirate chargers etc. that would otherwise cause damage to the phone.

UI (LCD, backlights, buzzer)

80 uA

RF supply voltages

VCobba

Vbb

Battery connector

CCONTCOBBA GJP

Baseband

MAD2 + MEMORY

CHRG_CTRL

VCORE

CHAPS

RTC backup

VChar

Charger & headset connector

Vbatt

Figure 2: Block Diagram of Power Distribution

Battery Interface

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 13

Page 28

NSB-7

System Module PAMS Technical Documentation

Battery charging

The electrical specifications give the idle voltages produced by the acceptable chargers at the DC connector input. The absolute maximum input voltage is 30V due to the transient suppressor that is protecting the charger input. At phone end there is no difference between a plug-in charger or a desktop charger. The DC-jack pins and bottom connector charging pads are connected together inside the phone.

MAD

VBAT

CCONTINT

CCONT

0R22

GND

ICHAR

PWM_OUT

VCHAR

LIM VOUT

CHAPS

RSENSE

PWM

VCH

GND

22k

TRANSCEIVER

100k

10k

Figure 3: Charging Block Diagram

30V

CHARGER

VIN

L_GND

Startup Charging

When a charger is connected, the CHAPS is supplying a startup current minimum of 130mA to the phone. The startup current provides initial charging to a phone with an empty battery. Startup circuit charges the battery until the battery voltage level is reaches 3.0V (+/- 0.1V) and the CCONT releases the PURX reset signal and program execution starts. Charging mode is changed from startup charging to PWM charging that is controlled by the MCU software. If the battery voltage reaches 3.55V (3.75V maximum) before the program has taken control over the charging, the startup current is switched off. For accessory detection, startup current is possible cut via CCUT line. The startup current is switched on again when the battery voltage is sunken 100mV (nominal).

Parameter Symbol Min Typ Max Unit

VOUT Start-up mode cutoff limit Vstart 3.45 3.55 3.75 V

VOUT Start-up mode hysteresis NOTE: Cout=4.7 uF

Start-up regulator output current

VOUT=0V....Vstart

Vstarthys 80 100 200 mV

Istart 130 165 200 mA

Page 14 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 29

NSB-7

PAMS Technical Documentation System Module

Battery Overvoltage Protection

Output overvoltage protection is used to protect phone from damage. This function is also used to define the protection cutoff voltage for the Lithium-Ion battery. The power switch is immediately turned OFF if the voltage in VOUT rises above the selected limit VLIM.

Parameter Symbol LIM input Min Typ Max Unit

Output voltage cutoff limit (during transmission or Li-battery)

VLIM LOW 4.4 4.6 4.8 V

The voltage limit (VLIM1 or VLIM2) is selected by logic LOW or logic HIGH on the CHAPS (N101) VLIM input pin.

When the switch in output overvoltage situation has once turned OFF, it stays OFF until the battery voltage falls below VLIM and PWM = LOW is detected. The switch can be turned on again by setting PWM = HIGH.

VCH

VCH<VOUT

VOUT

VLIM

SWITCH

PWM (32Hz)

ON OFF

Figure 4: Output Overvoltage Protection (in principle; not in time scale)

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 15

Page 30

NSB-7

"1"

System Module PAMS Technical Documentation

Battery Removal During Charging

Output overvoltage protection is also needed in case the main battery is removed when charger connected or charger is connected before the battery is connected to the phone.

With a charger connected, if VOUT exceeds VLIM, CHAPS turns switch OFF until the charger input has sunken below Vpor (nominal 3.0V, maximum 3.4V). MCU software will stop the charging (turn off PWM) when it detects that battery has been removed. The CHAPS remains in protection state as long as PWM stays HIGH after the output overvoltage situation has occured.

VCH (Standard Charger)

VOUT

PWM

SWITCH

Vpor

Droop depends on load

VLIM

Vstart

OFF

Battery removed, (standard) charger connected, VOUT rises (follows charger voltage)

2. VOUT exceedslimit VLIM(X),switch is turned immediatelyOFF 3

VOUT falls (because no battery) , also VCH<Vpor (standard chargers full-rectified output).WhenVCH>VporandVOUT<VLIM(X)->switchturnedonagain(alsoPWM is still HIGH) a nd VOUT again exceeds VLIM(X).

4. Software sets PWM = LOW -> CHAPS does n ot enter PWM mode

5. PWM low -> Startup mode, startup current flows until Vstart limit reached

6. VOUT exceeds limit Vstart, Istart is turned off

7. VCH falls below Vpor

& C in phone

Istart off due to VCH<Vpor

Vstarthys

Figure 5: Output Overvoltage Protection When Battery Removed (in principle; not in time scale)

PWM

When a charger is used, the power switch is turned ON and OFF by the PWM input. PWM rate is 1Hz. When PWM is HIGH, the switch is ON and the output current Iout = charger current - CHAPS supply current. When PWM is LOW, the switch is OFF and the output current Iout = 0. To prevent the switching transients inducing noise in audio circuitry of the phone soft switching is used.

Battery Identification

Different battery types are identified by a pulldown resistor inside the battery pack. The BSI line inside transceiver has a 100k pull-up to VBB. The MCU can identify the battery

Page 16 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 31

NSB-7

PAMS Technical Documentation System Module

by reading the BSI line DC-voltage level with a CCONT (N100) A/D-converter.

Name Min Typ Max Unit Notes

BSI 0 2.8 V Battery size indication 100k pull-up resistor to

VBB in phone SIM Card removal detection (Threshold is

2.4V@VBB=2.8V)

68 kohm Indication of a BLB-2 battery (600mAh Li-Ion)

22 kohm Indication resistor for a service battery

-5 5 % Indication resistor and pull-up resistor tolerance

VBATT

BATTERY

BTEMP

BSI

BGND

2.8V

10n

100k

10k

TRANSCEIVER

BSI

SIMCardDetX

CCONT

MAD

Figure 6: BSI connections for all battery types

The battery identification line is used also for battery removal detection. The BSI line is connected to a SIMCardDetX line of MAD2. SIMCardDetX is a threshold detector with a nominal input switching level 0.85xVcc for a rising edge and 0.55xVcc for a falling edge. The battery removal detection is used as a trigger to power down the SIM card before the power is lost. The BSI contact in the battery contact disconnects before the other con-

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 17

Page 32

NSB-7

System Module PAMS Technical Documentation

tacts so that there is a delay between battery removal detection and supply power off.

Vcc

0.85 _ 0.05 Vcc

0.55 _ 0.05 Vcc

SIMCARDDETX

GND

Figure 7: SIMCardDetX Detection Levels

SigOut

Battery Temperature

The battery temperature is measured with a NTC inside the battery pack. The BTEMP line inside transceiver has a 100k pull-up to VREF. The MCU can calculate the battery temperature by reading the BTEMP line DC-voltage level with a CCONT (N100) A/D-converter.

Pin Name Min Typ Max Unit Notes

3 BTEMP 0 1.4 V Battery temperature indication 100k pull-up

resistor to VREF in phone Battery package has NTC pull-down resistor: 47k +/-5%@+25C, B=4050 +/-3%

2.1 510320

47 Kohm Service battery value

-5 5 % 100k pull-up resistor tolerance

V ms

Phone power up by battery (input) Power up pulse width

Page 18 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 33

NSB-7

PAMS Technical Documentation System Module

VBATT

BATTERY

NTC

BSI

BTEMP

BGND

TRANSCEIVER

VREF

100k

10k

BTEMP

CCONT

Based on 47 kohm ± 5 % NTC with B = 4090 ±1.5 %. Without any alignment, with that and 1 % pull-up resistor, ± 2.5 _C accuracy is achieved between - 20 and +60 _C (± 3.5 _C @ -40 ... +85 _C).

Supply Voltage Regulators

The heart of the power distribution is the CCONT. It includes all the voltage regulators and feeds the power to the whole system. The baseband digital parts are powered from the VBB regulator which provides 2.8V baseband supply. The baseband regulator is active always when the phone is powered on. The VBB baseband regulator feeds MAD and memories, VCORE for MAD core, COBBA digital parts and the LCD driver in the UI section. There is a separate regulator for a SIM card. The regulator is selectable between 3V and 5V and controlled by the SIMPwr line from MAD to CCONT. The COBBA analog parts are powered from a dedicated 2.8V supply VCOBBA. The CCONT supplies also 5V for RF and for flash VPP. The CCONT contains a real time clock function, which is powered from a RTC backup when the main battery is disconnected. The RTC backup is rechargable polyacene battery. The battery is charged from the main battery voltage by the CHAPS when the main battery voltage is over 3.2V.

Figure 8: Standard Battery BTEMP connection

Operating Mode Vref RF REG VCOBBA VBB VSIM SIMIF Vcore

Power off Off Off Off Off Off Pull-down Off

Power on On On/Off On On On On/Off On

Reset On Off

On On Off Pull-down On

VR1 On

Sleep On Off Off On On On/Off On

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 19

Page 34

NSB-7

System Module PAMS Technical Documentation

NOTE: COBBA regulator is off in SLEEP mode. Its output pin may be fed from VBB in SLEEP mode by setting bit RFReg(5) to’1’ (default).

CCONT includes also five additional 2.8V regulators providing power to the RF section. These regulators can be controlled either by the direct control signals from MAD or by the RF regulator control register in CCONT which MAD can update. Below are the listed the MAD control lines and the regulators they are controlling.

- TxPwr controls VTX regulator (VR5)

- RxPwr controls VRX regulator (VR2)

- SynthPwr controls all the rf regulators except VR1

- VCXOPwr controls VXO regulator (VR1)

CCONT generates also a 1.5 V reference voltage VREF to COBBA. The VREF voltage is also used as a reference to some of the CCONT A/D converters.

In addition to the above mentioned signals MAD includes also TXP control signal which goes to HAGAR power control block. The transmitter power control TXC is led from COBBA to HAGAR.

Characteristics Condition Min Typ Max Unit

Output current VR1-VR6 Vout@2.8V 100 mA

Output current VR7 Depends on external BJT

Output current VR7BASE Base current limit

Output current VBB On Current limit 250mA Output current VBB Sleep Current limit 5mA

Output voltage VR1-VR7 over full temperature, input

Output voltage VBB over full temperature, input

Output voltage V2V (VCORE)

Vout@2.8V 150 mA

Vout@2.8V -10 mA

Vout@2.8V

voltage and load range

Programmable: Vout=1.3V+225mV*n N = 0,1,2,3,4,5,6

2.7 2.8 2.85 V

1.30 2.65 V

125

Output voltage V2V (VCORE) tolerance

Line regulation (not VBB) F v 10kHz, 2)

VBAT>3.15V

-5 +5 %

49 DB

Page 20 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 35

NSB-7

PAMS Technical Documentation System Module

Characteristics Condition Min Typ Max Unit

Line regulation (not VBB) F v 100kHz, 2)

VBAT>3.15v

Line regulation VBB, V2V (VCORE)

Load regulation T = 25_C0.61mV/mA

Supply current (each regulator) VR1...VR7

Supply current VBB ON mode I

Supply current VBB SLEEP mode I

Output voltage V2V (VCORE)

F v 100kHz 2) 30 DB

ON mode I

MAD2WD1 C10 MAD2WD1 C07 MAD2WD1 C05

40 DB

out

60+330

/60+

out

250

/60+

out

100

2.65

1.75

out

10+540

/10+

out

400

/10+

out

150

NOTE 1: Characteristics above are NOT valid if Vbat < 3.0V. NOTE 2: Line regulation is 20dB for f<100kHz when battery voltage is lower than 3.1V.

Switched Mode Supply VSIM

There is a switched mode supply for SIM-interface. SIM voltage is selected via serial IO. The 5V SMR can be switched on independently of the SIM voltage selection, but can’t be switched off when VSIM voltage value is set to 5V.

Characteristics Condition Min Typ Max Unit

Output voltage VSIM Over temperature

Over current

Output voltage V5V Over temp & current 4.8 5.0 5.2 V

Output voltage V5V_2 Over temperature 5.0 6.0 V

Output current VSIM Continuous DC 30 mA

Output current V5V Continuous DC 30 mA

Current consumption VSIM on

sleep

2.8

4.8

3.0

5.0

200 100

3.2

5.2

330 150

NOTE: VSIM and V5V can give together a total of 30mA.

uA uA

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 21

Page 36

NSB-7

System Module PAMS Technical Documentation

In the next figure the principle of the SMR / VSIM-functions is shown.

CCONT External

VBAT

V5V_4

V5V_3

V5V_2

VSIM

Power Up and Power Down

The baseband is powered up by:

1 Pressing the power key, that generates a PWRONX interrupt signal from the power key to the CCONT, which starts the power up procedure.

2 Connecting a charger to the phone. The CCONT recognizes the charger from the VCHAR voltage and starts the power up procedure.

3 A RTC interrupt. If the real time clock is set to alarm and the phone is switched off, the RTC generates an interrupt signal, when the alarm is gone off. The RTC interrupt signal is connected to the PWRONX line to give a power on signal to the CCONT just like the power key.

5V reg

V5V

Figure 9: Principle of the SMR Power Functions

5/3V

4 A battery interrupt. Intelligent battery packs have a possibility to power up the phone. When the battery gives a short (10ms) voltage pulse through the BTEMP pin, the CCONT wakes up and starts the power on procedure.

Power up with charger

When the charger is connected CCONT will switch on the CCONT digital voltage as soon as the battery voltage exceeds 3.0V. The reset for CCONT’s digital parts is released when the operating voltage is stabilized (50 us from switching on the voltages). Operating voltage for VCXO is also switched on. The counter in CCONT digital section will keep MAD in reset for 62 ms (PURX) to make sure that the clock provided by VCXO is stable. After this delay MAD reset is released, and VCXO -control (SLEEPX) is given to MAD. The next diagram explains the power on procedure with charger (the picture assumes empty

Page 22 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 37

NSB-7

PAMS Technical Documentation System Module

battery, but the situation would be the same with full battery):

SLEEPX

PURX

CCPURX

Vbat VR6

VR1 VBB (2.8V)

Vchar Vref

12 3

1: Battery voltage over 3.0==>Digital voltages to CCONT (VBB) 2: CCONT digital reset released. VCXO turned on 3: 62ms delay before PURX released

Figure 10: Power Up With Charger

When the phone is powered up with an empty battery pack using the standard charger, the charger may not supply enough current for standard powerup procedure and the powerup must be delayed.

Power Up with the Power Switch (PWRONX)

When the power on switch is pressed the PWRONX signal will go low. CCONT will switch on the CCONT digital section and VCXO as was the case with the charger driven power up. If PWRONX is low when the 64 ms delay expires, PURX is released and SLEEPX control goes to MAD. If PWRONX is not low when 64 ms expires, PURX will not be released, and

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 23

Page 38

NSB-7

System Module PAMS Technical Documentation

CCONT will go to power off (digital section will send power off signal to analog parts)

SLEEPX

PURX

CCPURX

PWRONX

VR1,VR6 VBB (2.8V)

Vchar

12 3

1:Power switch pressed ==> Digital voltages on in CCONT (VBB) 2: CCONT digital reset released. VCXO turned on 3: 62 ms delay to see if power switch is still pressed.

Power Up by RTC

RTC (internal in CCONT) can power the phone up by changing RTCPwr to logical 1.

Power Up by IBI

IBI can power CCONT up by giving a short pulse (10ms) through the BTEMP line. After powerup BTEMP will act as any other input channel for ADC.

When the PURX reset is released, the MAD releases the system reset ExtSysResetX and the internal MCUResetX signals and starts the boot program execution from MAD bootrom if MAD GenSDIO pin is pulled low or from external memory if GenSDIO pin is pulled high. In normal operation the program execution continues from the flash program memory. If the MBUS line is pulled low during the power up the bootrom starts a flash programming sequence and waits for the prommer response through FBUS_RX line.

Power Down

The baseband is powered down by:

1 Pressing the power key, that is monitored by the MAD, which starts the power down procedure.

Figure 11: Power Up With Switch

2 If the battery voltage is dropped below the operation limit, either by not charging it or by removing the battery.

3 Letting the CCONT watchdog expire, which switches off all CCONT regulators and

Page 24 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 39

NSB-7

PAMS Technical Documentation System Module

the phone is powered down.

4 Setting the real time clock to power off the phone by a timer. The RTC generates an interrupt signal, when the alarm is gone off. The RTC interrupt signal is connected to the PWRONX line to give a power off signal to the CCONT just like the power key.

The power down is controlled by the MAD. When the power key has been pressed long enough or the battery voltage is dropped below the limit the MCU initiates a power down procedure and disconnects the SIM power. Then the MCU outputs a system reset signal and resets the DSP. If there is no charger connected the MCU writes a short delay to CCONT watchdog and resets itself. After the set delay the CCONT watchdog expires, which activates the PURX and all regulators are switched off and the phone is powered down by the CCONT.

If a charger is connected when the power key is pressed the phone enters into the acting dead mode.

Modes of Operation

Acting Dead

If the phone is off when the charger is connected, the phone is powered on but enters a state called ”acting dead”. To the user the phone acts as if it was switched off. A battery charging alert is given and/or a battery charging indication on the display is shown to acknowledge the user that the battery is being charged.

Active Mode

In the active mode the phone is in normal operation, scanning for channels, listening to a base station, transmitting and processing information. All the CCONT regulators are operating. There are several sub-states in the active mode depending on if the phone is in burst reception, burst transmission, if DSP is working etc.

Sleep Mode

In the sleep mode all the regulators except the baseband VBB and the SIM card VSIM regulators are off. Sleep mode is activated by the MAD after MCU and DSP clocks have been switched off. The voltage regulators for the RF section are switched off and the VCXO power control, VCXOPwr is set low. In this state only the 32 kHz sleep clock oscillator in CCONT is running. The flash memory power down input is connected to the ExtSysResetX signal, and the flash is deep powered down during the sleep mode.

The sleep mode is exited either by the expiration of a sleep clock counter in the MAD or by some external interrupt, generated by a charger connection, key press, headset connection etc. The MAD starts the wake up sequence and sets the VCXOPwr and ExtSysResetX control high. After VCXO settling time other regulators and clocks are enabled for active mode.

If the battery pack is disconnect during the sleep mode, the CCONT pulls the SIM interface lines low as there is no time to wake up the MCU.

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 25

Page 40

NSB-7

System Module PAMS Technical Documentation

Charging

Charging can be performed in any operating mode.The battery type/size is indicated by a resistor inside the battery pack. The resistor value corresponds to a specific battery capacity. This capacity value is related to the battery technology as different capacity values are achieved by using different battery technology.

The battery voltage, temperature, size and current are measured by the CCONT controlled by the charging software running in the MAD.

The power management circuitry controls the charging current delivered from the charger to the battery. Charging is controlled with a PWM input signal, generated by the CCONT. The PWM pulse width is controlled by the MAD and sent to the CCONT through a serial data bus. The battery voltage rise is limited by turning the CHAPS switch off when the battery voltage has reached 4.2 V. Charging current is monitored by measuring the voltage drop across a 220 mohm resistor.

Watchdog

The Watchdog block inside CCONT contains a watchdog counter and some additional logic which are used for controlling the power on and power off procedures of CCONT. Watchdog output is disabled when WDDisX pin is tied low. The WD–counter runs during that time, though. Watchdog counter is reset internally to 32 s at power up. Normally it is reset by MAD writing a control word to the WDReg.

Page 26 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 41

NSB-7

PAMS Technical Documentation System Module

Audio Control

PCM serial interface

The interface consists of following signals: a PCM codec master clock (PCMDClk), a frame synchronization signal to DSP (PCMSClk), a codec transmit data line (PCMTX) and a codec receive data line (PCMRX). The COBBA-GJP generates the PCMDClk clock, which is supplied to DSP SIO. The COBBA-GJP also generates the PCMSClk signal to DSP by dividing the PCMDClk. The PCMDClk frequency is 512 kHz. PCMSClk frequency is 8.0 kHz.

PCMDClk

PCMSClk

PCMTxData

PCMRxData

sign extended 15 14 13 12 011 10 sign extended

MSB

LSB

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 27

Page 42

NSB-7

System Module PAMS Technical Documentation

Digital Control

The baseband functions are controlled by the MAD ASIC, which consists of a MCU, a system ASIC and a DSP. MAD with the GSM/PCN specific ASIC is named to MAD2.

MAD2 WD1

MAD2 WD1 contains following building blocks:

- ARM RISC processor with both 16-bit instruction set (THUMB mode) and 32-bit instruction set (ARM mode)

- TI Lead DSP core with peripherals:

- API (Arm Port Interface memory) for MCU-DSP communication, DSP code download, MCU interrupt handling vectors (in DSP RAM) and DSP booting.

- Serial port (connection to PCM)

-Timer

- DSP memory

- BUSC (BusController for controlling accesses from ARM to API, System Logic and MCU external memories, both 8- and 16-bit memories)

- System Logic

- CTSI (Clock, Timing, Sleep and Interrupt control)

- MCUIF (Interface to ARM via BUSC). Contains MCU BootROM

- DSPIF (Interface to DSP)

- MFI (Interface to COBBA AD/DA Converters)

- CODER (Block encoding/decoding and A51&A52 ciphering)

- AccIF (Accessory Interface)

- SCU (Synthesizer Control Unit for controlling 2 separate synthesizer)

- UIF (Keyboard interface, serial control interface for COBBA PCM Codec, LCD

Driver and CCONT)

- SIMI (SimCard interface with enhanced features)

- PUP (Parallel IO, USART and PWM control unit for vibra and buzzer)

- Flexpool

Page 28 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 43

NSB-7

PAMS Technical Documentation System Module

The MAD2 operates from a 13 MHz system clock, which is generated from the 13Mhz VCXO frequency. The MAD2 supplies a 6,5 MHz or a 13 MHz internal clock for the MCU and system logic blocks and a 13 MHz clock for the DSP, where it is multiplied to 45.5 MHz DSP clock. The system clock can be stopped for a system sleep mode by disabling the VCXO supply power from the CCONT regulator output. The CCONT provides a 32 kHz sleep clock for internal use and to the MAD2, which is used for the sleep mode timing. The sleep clock is active when there is a battery voltage available i.e. always when the battery is connected.

MAD2WD1 supply voltages are VBB and VCORE (V2V), VBB feed I/O pins so that MAD2WD1 is externally fully compatible with old versions. VCORE feed MAD2WD1 internal functions supply voltage; CPU, DSP and system logic.

Pin No:

A1 MCUGemIO 0 O 2 0 MCU General pur-

C2 LEADGND Lead Ground

D2 Col4 I/O UIF 2 Input Programma-

D3 Col3 I/O UIF 2 Input Programma-

H11 MCUGenIO1 I/O 2 Input,

E4 GND Ground

D4 Col2 I/O UIF 2 Input Programma-

C4 Col1 I/O UIF 2 Input programma-

Pin Name

Pin Type

Connecte d to/ from

Drive req. mA

Reset State

pullup

Note Explanation

pose output port

I/O line for keyboard ble pullup PR0201

ble pullup PR0201

Pullup PR0201

ble pullup PR0201

column 4

I/O line for keyboard

column 3

General purpose I/O

port

I/O line for keyboard

column 2

I/O line for keyboard

column 1

C3 Col0 I/O UIF 2 Input programma-

ble pullup PR0201

D1 LCDCSX I/O UIF 2 Input external pul-

lup/down

E1 LEADVCC Lead Power

F12 LoByteSelX NC

I/O line for keyboard

column 0

serial LCD driver chip

select, parallel LCD

driver enable

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 29

Page 44

NSB-7

System Module PAMS Technical Documentation

Pin No:

E3 Row5LCDCD I/O UIF 2 Input,

N4 VCC_CORE Core VCC in

E2 Row4 I/O UIF 2 Input,

F4 Row3 I/O UIF 2 Input,

F3 Row2 I/O UIF 2 Input,

Pin Name

Pin Type

Connecte d to/ from

Drive req. mA

Reset State

pullup

Note Explanation

pullup PR0201

3325c10

pullup PR0201

Keyboard row5 data

I/O, serial LCD driver

command/data indi-

cator, parallel LCD

driver read/write

select

Power

I/O line for keyboard

row 4, parallel LCD

driver register selec-

tion control

I/O line for keyboard

row 3, parallel LCD

driver data

I/O line for keyboard

row 2, parallel LCD

driver data

F2 Row1 I/O UIF 2 Input,

pullup

F1 Row0 I/O UIF 2 Input,

pullup

L11 JTDO O 2 Tri-state JTAG data out

L5 GND Ground

N12 JTRst I Input,

pulldown

M12 JTClk I Input pulldown

N13 JTDI I Input,

pullup

M13 JTMS I Input,

pullup

G13 VCC_IO IO VCC in

L12 CoEmu0 I/O 2 Input,

pullup

pullup PR0201

pulldown PD0201

PD0201

pullup PR0201

3325c10

pullup PR0201

I/O line for keyboard

row 1, parallel LCD

driver data

I/O line for keyboard

row 0, parallel LCD

driver data

JTAG reset

JTAG Clock

JTAG data in

JTAG mode select

Power

DSP/MCU emulation

port 0

L13 CoEmu1 I/O 2 Input,

pullup

H4 LEADGND Lead Ground

pullup PR0201

DSP/MCU emulation

port 1

Page 30 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 45

NSB-7

PAMS Technical Documentation System Module

Pin No:

L1 ARMGND ARM Ground

N3 MCUAd0 O MCU

K4 ARMVCC ARM Power

N2 MCUAd1 O MCU

N1 MCUAd2 O MCU

M4 MCUAd3 O MCU

M3 MCUAd4 O MCU

M2 MCUAd5 O MCU

M1 MCUAd6 O MCU

Pin Name

Pin Type

Connecte d to/ from

MEMORY

Drive req. mA

2 0 MCU address bus

Reset State

Note Explanation

H1 VCC_IO IO VCC in

3325c10

L4 MCUAd7 O MCU

MEMORY

L3 MCUAd8 O MCU

MEMORY

L2 MCUAd9 O MCU

MEMORY

K5 MCUAd10 O MCU

MEMORY

J4 GND Ground

K3 MCUAd11 O MCU

MEMORY

K2 MCUAd12 O MCU

MEMORY

K1 MCUAd13 O MCU

MEMORY

J3 MCUAd14 O MCU

MEMORY

2 0 MCU address bus

Power

J2 MCUAd15 O MCU

MEMORY

2 0 MCU address bus

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 31

Page 46

NSB-7

System Module PAMS Technical Documentation

Pin No:

J1 MCUAd16 O MCU

M10 VCC_CORE Core VCC in

H3 MCUAd17 O MCU

H2 MCUAd18 O MCU

G4 MCUAd19 O MCU

G3 MCUAd20 O MCU

G2 VCONT O

K6 ExtMCUDa0 I/O MCU

Pin Name

Pin Type

Connecte d to/ from

MEMORY

Drive req. mA

2 0 MCU address bus

2 Input MCU data bus

Reset State

Note Explanation

3325c10

Power

K9 GND Ground

L6 ExtMCUDa1 I/O MCU

MEMORY

M6 ExtMCUDa2 I/O MCU

MEMORY

N6 ExtMCUDa3 I/O MCU

MEMORY

L7 ExtMCUDa4 I/O MCU

MEMORY

M7 ExtMCUDa5 I/O MCU

MEMORY

N7 ExtMCUDa6 I/O MCU

MEMORY

N8 ExtMCUDa7 I/O MCU

MEMORY

M8 MCUGenIODa0I/O 2 Input MCU Data in

L8 MCUGenIODa1I/O 2 Input MCU Data in

2 Output MCU data bus

General purpose I/O 16-bit mode

16-bit mode

port

General purpose I/O

port

K8 MCUGenIODa2I/O 2 Input MCU Data in

16-bit mode

N9 MCUGenIODa3I/O 2 Input MCU Data in

16-bit mode

General purpose I/O

port

General purpose I/O

port

Page 32 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 47

NSB-7

PAMS Technical Documentation System Module

Pin No:

E10 GND Ground

M9 MCUGenIODa4I/O 2 Input MCU Data in

L9 MCUGenIODa5I/O 2 Input MCU Data in

N10 MCUGenIODa6I/O 2 Input MCU Data in

L10 MCUGenIODa7I/O 2 Input MCU Data in

M5 MCURdX O MCU

G11 VCC_CORE Core VCC in

N5 MCUWrX O MCU

Pin Name

Pin Type

Connecte d to/ from

MEMORY

Drive req. mA

2 1 MCU Read strobe

2 1 MCU write strobe

Reset State

Note Explanation

General purpose I/O 16-bit mode

16-bit mode

3325c10

port

General purpose I/O

port

General purpose I/O

port

General purpose I/O

port

Power

N11 ROM1SelX O MCU

ROM

M11 RAMSelX O MCU

RAM

J11 IRON O IR Mod 2 1 IR control

A1 MCUGenIO1 I/O 2 Input,

D8 DSPXF O 2 1 External flag

K10 SCVCC Special cell Power

K11 RFClk I VCXO Input System clock from

K12 RFClkGnd Input System clock refer-

K13 SIMCardDetX I Input SIM card detection

J10 SCGND Special cell Ground

D9 BuzzPWM O BUZZER 2 0 Buzzer PWM control

D11 LEADVCC LEAD Power

2 1 ROM chip select

2 1 RAM chip select

pullup

pullup PR0201

General purpose I/O

port

VCTCXO

ence ground input

G12 VibraPWM O VIBRA 2 0 Vibra PWM control

C9 GND Ground

E12 MCUGenIO3 I/O 2 Input,

pullup

pullup PR1001

General purpose I/O

port

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 33

Page 48

NSB-7

System Module PAMS Technical Documentation

Pin No:

E13 MCUGenIO2 I/O 2 Input,

J13 KBLights O UIF 2 1

C5 AccTxData I/O 4 Tri- State external pul-

B6 VCC_IO IO VCC in

F11 HookDet I Input Non-MBUS acces-

F10 HeadDet I Input Headset detection

D6 AccRxData I Input Accessory RX data,

D5 GND Ground

Pin Name

Pin Type

Connecte d to/ from

Drive req. mA

Reset State

pullup

Note Explanation

pullup PR1001

lup

3325c10

General purpose I/O

port

Accessory TX data,

Flash_TX

Power

sory connection

detector

interrupt

Flash_RX

G10 MCUGenIO4 I/O 2 Input,

pulldown

B5 MBUS I/O 2 Input,

external pullup

E11 VCXOPwr O CCONT 2 1 VCXO regulator con-

D13 SynthPwr O CCONT 2 0 Synthesizer regula-

B7 VCC_CORE Core VCC in

C10 GenCCO-

NTCSX

F13 LEADGND LEAD Ground

B10 GenSDIO I/O CCONT,

O CCONT 2 1 Chip select to CCONT

2Input,

UIF

external pullup/ down

pulldown PD1001

external pullup

3325c10

external pullup/down depending on how to boot

General purpose I/O

port

MBUS, Flash clock

trol

tor control

Power

Serial data in/out

A10 GenSClk O CCONT,

UIF

C11 SIMCardData I/O CCONT 2 0 SIM data

J12 GND Ground

B13 PURX I CCONT Input Power Up Reset

2 0 Serial clock

Page 34 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 49

NSB-7

PAMS Technical Documentation System Module

Pin No:

B12 CCONTInt I CCONT Input CCONT interrupt

A13 Clk32k I CCONT Input Sleep clock oscillator

D10 VCC_IO IO VCC in

A12 SIMCardClk O CCONT 2 0 SIM clock

B11 SIMCardRstX O CCONT 2 0 SIM reset

A11 SIMCardIOC O CCONT 2 0 SIM data in/out con-

D12 SIMCardPwr O CCONT 2 0 SIM power control

H10 LEADVCC LEAD Power

C13 RxPwr O 2 0 (RX regulator control)

C12 TxPwr O 2 0 (TX regulator control)

H12 TestMode I Input,

Pin Name

Pin Type

Connecte d to/ from

Drive req. mA

Reset State

pulldown

Note Explanation

input

Power 3325c10

trol

pulldown PD0201

Test mode select

H13 ExtSysResetX O 2 0 System Reset

B9 PCMTxData O COBBA 2 0 Transmit data, DX

K7 VCC_IO IO VCC in

3325c10

A9 PCMRxData I COBBA Input Receive data, RX

B8 PCMDClk I COBBA Input Transmit clock, CLKX

A8 PCMSClk I COBBA Input Transmit frame sync,

C6 COBBAClk O COBBA 4 1 COBBA clock, 13

A6 COBBACSX COBBA COBBA

A7 COBBASD COBBA COBBA

C7 IData COBBA COBBA

D7 QData COBBA COBBA

G1 VCC_CORE Core VCC in

3325c10

C1 DSPGenOut3 O RF 2 0 DSP general purpose

Power

FSX

MHz

Power

output

B4 DSPGenOut2 O RF 2 0 DSP general purpose

output

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 35

Page 50

NSB-7

System Module PAMS Technical Documentation

Pin No:

A4 DSPGenOut1 O RF 2 0 DSP general purpose

A5 DSPGenOut0 O CRFU 2 0 DSP general purpose

A3 FrACtrl O RF 2 0 RF front amplifier

B3 SynthEna O HAGAR 2 0 Synthesizer data

B1 SynthClk O HAGAR 2 0 Synthesizer clock

B2 SynthData O HAGAR 2 0 Synthesizer data

A2 TxPA O HAGAR 2 0 Power amplifier con-

Pin Name

Pin Type

Connecte d to/ from

Drive req. mA

Reset State

Note Explanation

output

control

enable

trol

Page 36 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 51

NSB-7

PAMS Technical Documentation System Module

Memories

MAD memory configuration

The MAD2WD1 used in NSB-7 contains 16 kWords RAM, and 80 kWords ROM memory.

Memory

The MCU program code resides in an external flash program memory, which size is 16Mbits (1024k x 16bit). The MCU work (data) memory size is 2048 kbits (256k x 16bit). Flash and SRAM memory chips are packed in same combo memory package.

The BusController (BUSC) section in the MAD decodes the chip select signals for the external memory devices and the system logic. BUSC controls internal and external bus drivers and multiplexers connected to the MCU data bus. The MCU address space is divided into access areas with separate chip select signals. BUSC supports a programmable number of wait states for each memory range.

Program and Data Memory

The MCU program code resides in the program memory. The program memory is 16Mbits (1024k x 16bit) Flash memory.

The flash memory has a power down pin that should be kept low, during the power up phase of the flash to ensure that the device is powered up in the correct state, read only. The power down pin is utilized in the system sleep mode by connecting the ExtSysResetX to the flash power down pin to minimize the flash power consumption during the sleep.

Nonvolatile data memory is implemented with program (Flash) memory. Special EEPROM emulation (EEEMmu) software is utilized.

Work Memory

The work memory is a static RAM of size 2096k (256k x 16). The memory contents are lost when the baseband voltage is switched off. All retained data must be stored into the data memory when the phone is powered down.

MCU Memory Requirements

Device Organisation Access Time ns Wait States Used Remarks

FLASH 1024kx16 120 1 uBGA 48

SRAM 256kx16 120 1 uBGA 48

MCU Memory Map

MAD2 supports maximum of 4GB internal and 4MB external address space. External memories use address lines MCUAd0 to MCUAd21 and 8-bit/16-bit databus. The BUSC bus controller supports 8- and 16-bit access for byte, double byte, word and double word data. Access wait states (0, 1 or 2) and used databus width can be selected separately for each memory block.

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 37

Page 52

NSB-7

System Module PAMS Technical Documentation

Flash Programming

The phone has to be connected to the flash loading adapter so that supply voltage for the phone and data transmission lines can be supplied from/to the adapter. When adapter switches supply voltage to the phone, the program execution starts from the BOOT ROM and the MCU investigates in the early start-up sequence if the flash prommer is connected. This is done by checking the status of the MBUS-line. Normally this line is high but when the flash prommer is connected the line is forced low by the prommer.

The flash prommer serial data receive line is in receive mode waiting for an acknowledgement from the phone. The data transmit line from the baseband to the prommer is initially high. When the baseband has recognized the flash prommer, the TX-line is pulled low. This acknowledgement is used to start to toggle MBUS (FCLK) line three times in order that MAD2 gets initialized. This must be happened within 15 ms after TX line is pulled low. After that the data transfer of the first two bytes from the flash prommer to the baseband on the RX-line must be done within 1 ms.

When MAD2 has received the secondary boot byte count information, it forces TX line high. Now, the secondary boot code must be sent to the phone within 10 ms per 16 bit word. If these time-out values are exceeded, the MCU (MAD2) starts normal code execution from flash. After this, the timing between the phone and the flash prommer is handled with dummy bites.

A 5V programming voltage is supplied inside the transceiver from the battery voltage with a switch mode regulator (5V/30mA) of the CCONT. The 5V is connected to VPP pin of the flash.

Characteristics Min Typ Max Unit

Time from boot indication to MAD2 initialization sequence

Time from MAD2 initialization sequence to byte length information

Time from byte length information to end of secondary boot code loading.

15 ms

1 ms

10 per16 bit

word

Page 38 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 53

NSB-7

PAMS Technical Documentation System Module

CCONT pin (PurX)

MAD pin (FCLK (MBUS))

MAD pin 109 (FRX (FRxData))

MAD pin (FTX (FTxData))

SRAM D221 (Chip Sel) FLASH D210 (Chip Sel)

COBBA GJP

CCONT pin (PurX)

MAD pin (FCLK (MBUS))

MAD pin (FRX (FRxData))

MAD pin (FTX (FTxData))

Figure 12: Flash Programming Sequence

COBBA GJP ASIC provides an interface between the baseband and the RF-circuitry. COBBA performs analogue to digital conversion of the receive signal. For transmit path COBBA performs digital to analogue conversion of the transmit amplifier power control

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 39

Page 54

NSB-7

System Module PAMS Technical Documentation

ramp and the in-phase and quadrature signals. A slow speed digital to analogue converter will provide automatic frequency control (AFC).

COBBA is at any time connected to MAD asic with two interfaces, one for transferring TX and RX data between MAD and COBBA and one for transferring codec RX/TX samples.

Real time clock

Requirements for a real time clock implementation are a basic clock (hours and minutes), a calender and a timer with alarm and power on/off -function and miscellaneous calls. The RTC will contain only the time base and the alarm timer but all other functions (e.g. calendar) will be implemented with the MCU software. The RTC needs a power backup to keep the clock running when the phone battery is disconnected. The backup power is supplied from a rechargable Li-ion battery that can keep the clock running some ten minutes. If the backup has expired, the RTC clock restarts after the main battery is connected. The CCONT keeps MCU in reset until the 32kHz source is settled (1s max).

The CCONT is an ideal place for an integrated real time clock as the asic already contains the power up/down functions and a sleep control with the 32kHz sleep clock, which is running always when the phone battery is connected. This sleep clock is used for a time source to a RTC block.

RTC backup battery charging

CHAPS has a current limited voltage regulator for charging a backup battery. The regulator derives its power from VOUT so that charging can take place without the need to connect a charger. The backup battery is only used to provide power to a real time clock when VOUT is not present so it is important that power to the charging circuitry is derived from VOUT and that the charging circuitry does not present a load to the backup battery when VOUT is not present.

It should not be possible for charging current to flow from the backup battery into VOUT if VOUT happens to be lower than VBACK. Charging current will gradually diminish as the backup battery voltage reaches that of the regulation voltage.

Security

The phone flash program and IMEI code are software protected using an external security device that is connected between the phone and a PC. The security device uses the phone given IMEI number, the software version number and a 24bit hardware random serial number that is read from the COBBA and calculates a flash authority identification number that is stored into the phone (emulated) EEPROM.

Baseband EMC Strategy

The baseband EMC strategy is divided into electrical and mechanical items. As electrical guide lines, clocks and high speed signals should be routed in inner layers and away from the PCB edges. Clock signals distributed to other circuits should have series resistors incorporated to reduce rise times and reflections. Slew rate controlled buffers should be used on custom components wherever possible to reduce the EMC produced by the circuit. Separate power supplies for digital, analog and rf-blocks should be used as much as possible. Baseband and RF supply power rails should be isolated from each other by

Page 40 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 55

NSB-7

PAMS Technical Documentation System Module

means of inductors in the power supply rail to prevent high frequency components produced on the baseband power supply rail to spread out over the RF power supply plane. This might be required to avoid interference from digital circuits to affect the performance of RF section.

All external connectors and connection must be filtered using RC or LC networks to prevent the high frequency components from entering connection cables that then will act as antennas. The amount of this type of EMC component is in straight relation to the amount of external connections. The type of network and amount of components to be used is determined by the AC and DC impedance characteristic of that particular signal. Low impedance signals requires LC network while medium impedance level signals, input signals at moderate band width can use RC networks.

The EMC protection should also prevent external or internal signals to cause interference to baseband and in particular to audio signals. Internal interference is generated by the transmitter burst frequency and the switchmode charging. The transmitter burst frequency interference is likely to cause noise to both microphone and earphone signals. The transmitter RF interference is likely to cause more problems in the microphone circuitry than in the earphone circuitry since the earpiece is a low impedance dynamic type.

As mechanical guide lines, the baseband and RF sections should be isolated from each other using EMC shielding, which suppresses radiated interferences. The transmitter burst frequency can also generate mechanical vibrations that can be picked up by the microphone if it is not properly isolated from the chassis using rubber or some other soft material. Connection wires to internal microphone and earphone should be as short as possible to reduce the interference caused by internal signals.

ESD protection has to be implemented on each external connection that is accessible during normal operation of the phone.

Baseband Testing

The MCU software enters a local mode at startup if a dummy battery is attached and the battery temperature value is high enough. This means that the fixed resistor on the BTEMP line must correspond to a temperature higher than +85 C. In the local mode the baseband can be controlled through MBUS or FBUS connections by a PC-locals software. Baseband internal connections are tested with self tests if possible. By connecting MAD2 pin ROW5 to ground, MAD2 pins are toggled as a daisy chain, which can be used for detecting short circuits in MAD2 pins. Test pads will be placed on engine pcb for service and production trouble shooting purposes in some supply voltage and signal lines.

Alignments

Within alignment those parameters are adjusted, that cannot be set accurate enough by design, because of component tolerances.

Due to use of 5% resistor values, the channels of the CCONT A/D converters need to be aligned in the production phase.

Within battery voltage VBATT tuning the MCU software reads the A/D reading from

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 41

Page 56

NSB-7

System Module PAMS Technical Documentation

CCONT at 3.6V and stores this reading to EEPROM memory as a reference point. Another reference point is created by assuming that when the input voltage is zero, A/D reading is also zero. Now the slope is known and A/D readings can be calibrated. Calibration is included in VBATT A/D reading task.

Battery charging voltage VCHAR and current ICHAR are calibrated using one test setting. Test jig in production line must have a connection to battery terminals. ICHAR is adjusted to 500mA and VCHAR to 8.4V with appropriate load connected to the battery terminals.

BTEMP is calibrated with 47kohm resistor.

BSI is calibrated with 22kohm resistor.

Baseband Startup for Testing

When an unprogrammed module is powered up the first time the MCU starts from the boot rom inside the MAD2. The MBUS line is to be kept low to inform the MCU that the flash prommer is connected and the MCU should stop after the boot and wait for a download code.

When the flash programming is performed successfully the MCU switches to flash prom software. If the baseband is powered up for the first time the MCU will remain in local mode as the factory set has not been executed. To allow re-programming of working modules the MCU is at startup forced into local mode by connecting the BSI and BTEMP signals to ground using specified resistors.

Page 42 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 57

NSB-7

PAMS Technical Documentation System Module

RF Module

This RF module takes care of all RF functions of GSM1900 single band engine. RF circuitry is on one side of a 8 layer transceiver PCB. PCB area for the RF circuitry is about 15 cm2. RF design is based on the first dualband direct conversion RF-IC ”Hagar”. So there is no intermediate frequency. That means the number of components is lower than before and there shall be much less interference problems than previously.

Shielding

EMC emissions are taken care by using metallized plastic shield which screens the whole transceiver. Internal screening is realized by isolated partitions, these are the PA and the VCO blocks. The baseband circuitry is located on the same side of pcb.

Minimum height on RF board is 1.8 mm and a little space has been reserved for higher components (2.5 mm). In addition there is a possibility to put some higher (max. 2.0 mm) components in low area (recesses can be made in plastic shield). Heat generated by the circuitry will be conducted out via the PCB ground planes and metal shields.

Environmental Specifications

Normal and Extreme voltages

Lithium-Ion battery (1cell)

Nominal Voltage 4.1 V

Lower Extreme Voltage 3.45 V (0.85 x 4.1 V = 3.49 V, "the MS shall inhibit

Higher Extreme Voltage Nominal

Absolute Maximum Voltage 5.1 V

Software Cut-off Voltage 3.1 V

Temperature Conditions

RF Specifications are met within

all RF transmissions when the power supply voltage is below the manufacturer declared shut-down voltage")

-10...+55 deg C ambient temperature.

Storage temperature range is

-40...+70 deg C.

Humidity

Relative humidity range is 5... 95%. This module is not protected against water. Condensation or splashed water

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 43

Page 58

NSB-7

System Module PAMS Technical Documentation

might cause malfunction momentary. Long term wetness will cause permanent damage (corrosion etc.).

Vibration

All requirements must be met in following vibration conditions:

Freq. ASD (Acceleration Spectral Density) random vibration

10...100 Hz 3 m2/s3 (0.0132 g2/Hz)

100...500 Hz -3 dB/Octave

ESD Strength

Module should withstand an electrostatic discharge from 150 pF capacitor via 300 ohm resistor. Conducted discharge into antenna and battery connector is 8 kV (>10 discharges) and air contact 15 kV (>10 discharges).

Main Technical Specifications

Maximum Ratings

Parameter Rating

Normal battery voltage, idle mode 3.6 V

Regulated supply voltage 2.8 +/- 3% V

Voltage reference 1.5 +/- 1.5% V

Operating temperature range -10...+55 deg. C

Absolute maximum voltage 5.1 V

Software cut-off voltage 3.1 V

Page 44 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 59

NSB-7

PAMS Technical Documentation System Module

RF Frequency Plan

Figure 13: RF Frequency Plan

DC Characteristics

Regulators

Transceiver has a multi function power management IC at baseband section, which contains among other functions also 7 pcs of 2.8 V regulators. All regulators can be controlled individually with 2.8 V logic directly or through control register. In GSM direct controls are used to get fast switching because the regulators are used to enable RF functions.

VREF_2 from CCONT IC and RXREF from COBBA IC are used as the reference voltages for HAGAR RF-IC, VREF_2 (1.5V) for bias reference and RXREF (1.2V) for RX ADC’s reference.

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 45

Page 60

NSB-7

System Module PAMS Technical Documentation

Control Signals

VXCO PWR

LLLLL<10 uALeakage current

H H L L L 28 mA Synthesizer

H H H L L 81 mA RX active

H H L H L 138 mA TX active except

H H L H H 1700 mA TX active, full

SYNTH PWR

RX PWR

TX PWR

TXP

Typ.curre nt cons.

Notes

(PA)

power

All regulators are connected to HAGAR and directed with SYNTPWR. Different modes are switched on via serial bus.

All control signals are coming from MAD2 (2.8 V logic signals).

List of the needed supply voltages:

Volt. source Name of the supply Load

V5V VCP PLL charge pump, VCO VR5 VTX TX modulator VR1 VXO VCTCXO VR2 VRX HAGAR IC

(LNA2+mixer+DTOS)

VR4 VSYN_2 HAGAR IC (div+LO-buff+prescaler) VR3 VSYN_1 LNA + HAGAR (Vdd_bb) VR6 COBBA analog parts VREF_2 ref. voltage for HAGAR RXREF (COBBA) ref. voltage for HAGAR TXVGSM (Hagar) Ant. sw. GSM TXVDCS (Hagar) Ant. sw. DCS TXVDET (Hagar) Power detector Vbatt VBATT RF regulators in CCONT, PA

Page 46 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 61

NSB-7

PAMS Technical Documentation System Module

Power Distribution Diagram

SYNPWR

VXOENA

VBATT

Hagar

Vpc

VREF

vref_2

HAGAR

bias ref

TXC

TXP

V5V

1.76 A

VR7

VR6

vtx

VR5

vsyn_2

VR4

BATTERY

3.6 V

vsyn_1

4.7V

Reg

20 mA

VCO

20 mA

analog

COBBA

1.6 mA

67 mA

TX: 31.5 mA

RX: 18.5 mA

HAGAR RF-IC

RX / TX parts

PLL

6mA

7.7 mA

LNA

TX: 29 mA

RX: 26 mA

vrx

R2VR3

vxo

2mA

VCTCXO

+buff.

1.3 mA

Figure 14: Power Distribution Diagram

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 47

Page 62

NSB-7

System Module PAMS Technical Documentation

RF Characteristics

GSM1900 (PCS1900)

Item Values

Receive Frequency Range 1930.2 … 1989.8 MHz

Transmit Frequency Range 1850.2 … 1909.8 MHz

Duplex Spacing 80 MHz

Channel Spacing 200 kHz

Number of Channels 299

Power Class 1

Number of Power Levels 16

Transmitter Characteristics

Item Values

Type Direct conversion, single band,

non-linear, FDMA/TDMA

LO Frequency Range 3700.4... 3819.6 MHz

Output Power 1 W peak

Gain Control Range min. 30 dB

Maximum Phase Error (RMS/peak) 5 deg / 20 deg

Output Power Requirements

Parameter Min. Typ. Max. Unit / Notes

Max. Output Power 29.0 dBm

Max. Output Power Tolerance (Power Level 0)

Output Power Tolerance / Power Levels 1...8

Output Power Tolerance / Power Levels 9...13

+/- 2.0 +/- 2.5

+/- 3.0 +/- 4.0

+/- 4.0 +/- 5.0

dB, normal condition dB, extreme condition

Output Power Tolerance / Power Levels 14 and 15

+/- 5.0 +/- 6.0

dB, normal cond. dB, extreme cond.

Page 48 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 63

NSB-7

PAMS Technical Documentation System Module

Output RF Spectrum due to modulation

Power level

PL 0 +0.5 -30 -33 -60 -60 -65 -73 dBc

PL 1 +0.5 -30 -33 -60 -60 -63 -71 dBc

PL 2 +0.5 -30 -33 -60 -60 -61 -69 dBc

PL 3 and lower +0.5 -30 -33 -60 -60 -59 -67 dBc

100 kHz

Measurement Bandwidth 30 kHz Measurement Bandwidth 100 kHz

200 kHz

250 kHz

400 kHz

600 to 1800 kHz

1800 to 6000 kHz

> 6000

kHz

Spectrum due to switching transients

Power Level 400 kHz 600 kHz 1200 kHz 1800 kHz Unit

all -23 -26 -32 -36 dBm

Measurement Bandwidth 30 kHz

Spurious Emissions (when allocated a channel)

Unit

Frequency Range Min. Typ. Max. Unit / Notes

9 kHz... 1 GHz -36 dBm

1... 12.75 GHz -30 dBm *

* 1930 … 1990 MHz -71 dBm

A maximum of five exceptions with a level up to –36 dBm are permitted in the band 1930…1990 MHz for each ARFCN used in the measurements.

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 49

Page 64

NSB-7

System Module PAMS Technical Documentation

Spurious Emissions (idle mode)

Frequency Range Min. Typ. Max. Unit / Notes

9 kHz... 1 GHz -57 dBm

1... 12.75 GHz -47 dBm *

* 1850 … 1910 MHz -53 dBm

Frequency Error and Phase Accuracy

Propagation condition Min. Typ. Max. Unit/Notes

Static ch. +/- 0.1 ppm

TU1.5 +/- 320 Hz

TU50 +/- 260 Hz

HT100 +/- 350 Hz

RA130 +/- 400 Hz

RMS Phase Error 5.0 deg

Peak Deviation 20.0 deg

Receiver Characteristics

Item Values

Type Direct conversion, single band, linear, FDMA/TDMA

LO Frequencies 3860.4... 3979.6 MHz

Typical 3 dB Bandwidth +/- 91 kHz

Sensitivity min. - 102 dBm, S/N >8 dB

Typical Total Receiver Voltage Gain (from antenna to RX ADC)

Receiver Output Level (RF Level -95 dBm) 230 mVpp, single ended I/Q-signals to RX ADCs

Typical AGC Dynamic Range 83 dB

Accurate AGC Control Range 50 dB

86 dB

Typical AGC Step in LNA 33 dB

Usable Input Dynamic Range -102... -10 dBm

RSSI Dynamic Range -110... -48 dBm

Compensated Gain Variation in Receive Band +/- 1.0 dB

Page 50 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 65

NSB-7

PAMS Technical Documentation System Module

Blocking Requirements

Frequency Band Minimum

600 kHz <= [f – fo] < 800 kHz -43 dBm / in-band 800 kHz <= [f – fo] < 1.6 MHz -43 dBm / in-band

1.6 MHz <= [f – fo] < 3 MHz -33 dBm / in-band 3 MHz <= [f – fo] -26 dBm / in-band

100 kHz – < 1830 MHz 0 dBm / out-of-band 1830 MHz – < 1910 MHz -12 dBm / out-of-band

> 2010 MHz – 2070 MHz -12 dBm / out-of-band

> 2070 MHz – 12.75 GHz 0 dBm / out-of-band

Typical / Nominal

Maximum Unit / Notes

In-band (1910…2010 MHz); maximum of twelve occurrences are permitted.

Out-of-band; maximum of 24 occurrences are permitted.

AM Suppression Requirements

Frequency Band Minimum

[f – fo] >= 6 MHz * -29 dBm

Typical / Nominal

Maximum Unit / Notes

* Interferer is TDMA signal, pseudo random GMSK modulated at integer multiple of 200 kHz distance from wanted signal.

Interferer is at least 2 channels separated from any identified spurious response.

Interferer is active one time slot and delayed in time between 61 and 86 bit periods relative to the wanted signal bursts. It’s also synchronized.

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 51

Page 66

NSB-7

System Module PAMS Technical Documentation

Sensitivity, Inter modulation, Spurious Rejection and Emissions

Parameter Minimum

Reference Sensitivity Level -102 dBm Inter modulation Rejection 50 dB, fo=2*f1-f2, [f2-

Spurious Response Rejection 56 * dB

Spurious Emissions -57 dBm, 9 kHz - 1 GHz

Typical / Nominal

Maximum Unit / Notes

f1]=800 kHz

-47 dBm, 1 GHz - 12.75

GHz

* 12 occurrences allowed in band 1910-2010 MHz/test ch. Rest of the occurrences have to meet blocking requirements. Max. 24 spurious responses are allowed in combined band 100 kHz-1830 MHz and 2010 MHz-12.75 GHz, other responses have to be in the limits of blocking specification.

Reference Interference level

Parameter Minimum

Typical / Nominal

Maximum Unit / Notes

Cochannel Interference Ratio 9 dB

Adjacent (200 kHz) Interference Ratio

Adjacent (400 kHz) Interference Ratio

Adjacent (600 kHz) Interference Ratio

-9 dB

-41 dB

-49 dB

Interferer is modulated with random GMSK. Interferer and wanted signals are faded.

Page 52 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 67

NSB-7

PAMS Technical Documentation System Module

RF Block Diagram

Architecture contains RF-IC (“Hagar”), PA module, VCO module, VCTCXO module and discrete LNA stage.

TXIP

TXIN

TXQP

AFC

RXREF

1.2 V

VREF_2

1.5 V

SERIAL CTRL

BUS

TXC

TXQN

TXP

SHF

VCO

PLL

26 MH z

BIAS

f/2

Hagar

Figure 15: RF Block Diagram

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 53

Page 68

NSB-7

System Module PAMS Technical Documentation

Frequency synthesizer

VCO frequency is locked by PLL into a stable frequency source, which is a VCTCXO module (Voltage Controlled Temperature Compensated Crystal Oscillator). VCTCXO is running at 26 MHz. Temperature effect is controlled by AFC (Automatic Frequency Control) voltage. VCTCXO is locked to a frequency of base station. AFC is generated by baseband with a 11 bit conventional DAC in COBBA asic.

PLL is located in HAGAR RF-IC and is controlled via serial bus by COBBA (in baseband). There is a 64/65 (P/P+1) pre-scaler, an N- and A-divider, a reference divider, a phase detector and a charge pump for an external loop filter. SHF (Super High Frequency) local signal, generated by a VCO module (Voltage Controlled Oscillator), is fed to the prescaler. The pre-scaler is a dual modulus divider. Output of the pre-scaler is fed to the Nand A-divider which generates an input to the phase detector. The phase detector compares this signal to a reference signal (400kHz) which is divided by the reference divider from VCTCXO output. Output of the phase detector is connected to the charge pump which charges or discharges an integrator capacitor in the loop filter depending on a phase of measured frequency compared to the reference frequency.

The loop filter filters out pulses and generates a DC control voltage to the VCO. The loop filter defines a step response of PLL (Phase Locked Loop), i.e. Settling Time, and effects to a stability of the loop - that’s why the integrator capacitor has got a resistor for phase compensation. Other filter components are for sideband rejection. Dividers are controlled via serial bus. SDATA is for data, SCLK is a serial clock for the bus and SENA1 is a latch enable which stores new data into the dividers.

LO signal is generated by a SHF VCO module. The VCO has double frequency in GSM1900 compared to actual RF channel frequency. The LO signal is divided by two in HAGAR.

freq.

ref

f_out /

PHASE

DET.

CHARGE

PUMP

reference

FC-controlled

f_out

VCO

Kvco

M = A(P+1) + (N-A)P=

=NP+A

Page 54 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 69

NSB-7

PAMS Technical Documentation System Module

Figure 16: Phase Locked Loop

Receiver

Receiver is a direct conversion linear receiver. Received RF signal from antenna is fed via Antenna Switch to the 1st RX SAW filter and a discrete LNA (Low Noise Amplifier). Gain selection control of the LNA comes from HAGAR IC. Gain step is activated when RF level in antenna is about -40 dBm.

After the LNA amplified signal (with low noise level) is fed to a bandpass filter (the 2nd RX SAW filter). The RX filters define how good are the blocking characteristics against spurious signals outside the receive band and the protection against spurious responses.

These bandpass filtered signals are then balanced with baluns. Differential RX signal is amplified and mixed directly down to a BB frequency in HAGAR. Local Oscillator signal is generated by an external VCO. The VCO signal is divided by 2. PLL and dividers are in HAGAR IC.

From the mixer output to an ADC input RX signal is divided to I- and Q-signals. Accurate phasing is generated by LO dividers. After the mixer DTOS amplifiers convert the differential signals to single ended. DTOS has two gain stages. The first one has constant gain of 12dB and 85kHz cut off frequency. The gain of second stage is controlled by control signal g10. If g10 is high (1) the gain is 6dB and if g10 is low (0) the gain is -4dB.

The active channel filters in HAGAR IC provides selectivity for channels (-3dB @ +/-100 kHz typ.). Integrated baseband filter is an active RC filter with two off-chip capacitors. Long RC time constant needed in the channel selection filter of direct conversion receiver is produced by large off-chip capacitors because the impedance levels could not be increased due to noise specifications. The baseband filter consists of two stages, DTOS and BIQUAD. DTOS is a differential to single-ended converter having 8dB or 18dB gain. BIQUAD is a modified Sallen-Key Biquad.

Integrated resistors and capacitors are tunable. These are controlled by a digital control word. The correct control words which compensate process variation of the integrated resistors and capacitors and tolerance of the off-chip capacitors are found by a calibration circuit.

The next stage in receiver chain is an AGC amplifier - also integrated in HAGAR. The AGC has a digital gain control via serial bus from COBBA IC. The AGC stage provides gain control range of 40 dB (10 dB steps) for the receiver and also necessary DC compensation. The 10 dB AGC step is implemented by DTOS stages.

The DC compensation is made during DCN1 and DCN2 operations (controlled via serial bus). DCN1 is carried out by charging large external capacitors in the AGC stages to a voltage which cause a zero dc-offset. DCN2 sets the signal offset to a constant value (RXREF 1.2 V). The RXREF signal (from COBBA GJP) is used as a zero level to RX ADCs.

Single ended filtered I/Q-signal is finally fed to the ADCs of COBBA. The input level for ADC is 1.4 Vpp max.

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 55

Page 70

NSB-7

System Module PAMS Technical Documentation

Transmitter

Transmitter chain consists of a final frequency IQ-modulator, a single band power amplifier and a power control loop.

I- and Q-signals are generated by baseband in COBBA asic. After post filtering (RC network) the signals are modulated by IQ-modulator in HAGAR IC. The LO signal for modulator is generated by a VCO and is divided by 2. After modulator the TX signal is amplified and buffered. HAGAR TX output level is +3 dBm minimum.

Next the TX signal is converted to single ended by discrete baluns. The final amplification is realized by the power amplifier (PA). It has a 50 ohm input and output. Right output power is controlled by a power control loop. The PA is able to generate over 1 W output power (0 dBm input level). The gain control range is over 35 dB to get desired power levels and power ramping up/down.

Harmonics generated by the nonlinear PA are filtered out by the diplexer inside the antenna switch module.

Power control circuitry consists of a discrete power detector and an error amplifier (in HAGAR). There is a directional coupler between the PA output and the antenna switch. The directional coupler takes a sample from the TX power with a certain ratio. The sampled signal is rectified by a schottky-diode to produce a DC signal (after filtering). The detected voltage is compared by the error amplifier in HAGAR to TXC voltage which is

generated by a DA converter in COBBA. The TXC has got a raised cosine form (cos4 function) which reduces switching transients when pulsing the TX power up and down. Because dynamic range of the detector is not wide enough to control the TX power (actually the RF output voltage) over the whole range there is a control named TXP to work under the detected levels. Burst is enabled and set to rise with TXP until the output level is high enough, i.e. when the feedback loop works. The loop controls the TX output to rise to a wanted output level. The burst has got a template of TXC ramp. Because the feedback loops can be unstable the loop is compensated by a dominating pole. The pole

Page 56 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 71

NSB-7

PAMS Technical Documentation System Module

decreases gain at high frequencies to insure phase margins high enough.

PADIR.COUPLER

RF_OUT

DETECTOR

=-R1/R2

det

Figure 17: Power Control Loop Diagram

ERROR AMPLIFIER

RF_IN

DOMINATING

POLE

TXC

AGC strategy

AGC amplifier is used to maintain output level of the receiver in certain range. AGC has to be set before each received burst. This is called pre-monitoring. Receiver is switched on roughly 280 µs before the burst begins. DSP measures received signal level and adjusts AGC amplifier via serial bus from COBBA GJP.

There is a 50 dB accurate gain control (10 dB steps) and one larger step (~30 dB) in LNA. LNA AGC gain step size depends on a channel with some amount.

RSSI must be measured accurately on range of -48...-110 dBm. Above -48 dBm level MS reports to base station the same reading.

Production calibration is done by two RF levels. The LNA gain step is not calibrated.

AFC function

AFC is used to lock the transceivers clock to the frequency of base station. AFC voltage is generated by COBBA asic with a 11 bit DA converter. In the AFC control line a RC filter is used to reduce noise coming from the converter. Settling time requirement for the RC network comes from signalling, i.e. how often PSW (Pure Sine Wave) slots occur. The PSW is repeated in every 10th frame. It means there is a PSW every 46 ms. The AFC tracks base station frequency continuously. This way the transceiver gets a stable frequency. Temperature does not affect to VCTCXO frequency very fast.

Settling time requirement comes also from the start-up time allowed. When the trans-

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 57

Page 72

NSB-7

System Module PAMS Technical Documentation

ceiver is in sleep mode and ”wakes up" to a receive mode there is only ca. 5 ms for the AFC voltage to settle. When the first burst comes in the system clock has to be settled with +/- 0.1 ppm frequency accuracy. The VCTCXO module requires also 5 ms to settle to the final frequency. Amplitude rises to full swing in 1... 2 ms. Because the frequency settling time is higher this oscillator must be powered up early enough.

DC Compensation

DC compensation is done during DCN1 and DCN2 operations (controlled via serial bus). DCN1 is carried out by charging large external capacitors in AGC stages to a voltage which causes a zero dc offset. DCN2 sets the signal offset to a constant value (RXREF 1.2 V).

Page 58 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 73

NSB-7

PAMS Technical Documentation System Module

Parts List of RB9 (EDMS Issue 5.3) Code: 0201512

ITEM CODE DESCRIPTION VALUE TYPE

R100 1430826 Chip resistor 680 k 5 % 0.063 W 0402 R101 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R102 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R103 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R104 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R105 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R109 1620017 Res network 0w06 2x100r j 0404 0404 R110 1430826 Chip resistor 680 k 5 % 0.063 W 0402 R111 1430820 Chip resistor 470 k 5 % 0.063 W 0402 R118 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R120 1620025 Res network 0w06 2x100k j 0404 0404 R122 1620019 Res network 0w06 2x10k j 0404 0404 R124 1620017 Res network 0w06 2x100r j 0404 0404 R128 1430718 Chip resistor 47 5 % 0.063 W 0402 R131 1419003 Chip resistor 0.22 5 % 1210 R154 1430325 Chip resistor 2.2 M 5 % 0.063 W 0603 R201 1430812 Chip resistor 220 k 5 % 0.063 W 0402 R202 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R203 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R205 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R206 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R207 1430726 Chip resistor 100 5 % 0.063 W 0402 R208 1430726 Chip resistor 100 5 % 0.063 W 0402 R209 1825021 Chip varistor vwm14v vc46v 0402 0402 R210 1825021 Chip varistor vwm14v vc46v 0402 0402 R211 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R215 1620023 Res network 0w06 2x47k j 0404 0404 R252 1430754 Chip resistor 1.0 k 5 % 0.063 W 0402 R254 1430760 Chip resistor 1.8 k 5 % 0.063 W 0402 R256 1430718 Chip resistor 47 5 % 0.063 W 0402 R257 1430718 Chip resistor 47 5 % 0.063 W 0402 R258 1430746 Chip resistor 560 5 % 0.063 W 0402 R260 1430744 Chip resistor 470 5 % 0.063 W 0402 R261 1430726 Chip resistor 100 5 % 0.063 W 0402 R262 1825021 Chip varistor vwm14v vc46v 0402 0402 R263 1825021 Chip varistor vwm14v vc46v 0402 0402 R266 1430796 Chip resistor 47 k 5 % 0.063 W 0402 R267 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R268 1430744 Chip resistor 470 5 % 0.063 W 0402 R269 1620025 Res network 0w06 2x100k j 0404 0404 R270 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R272 1430804 Chip resistor 100 k 5 % 0.063 W 0402 R273 1430792 Chip resistor 33 k 5 % 0.063 W 0402 R274 1430812 Chip resistor 220 k 5 % 0.063 W 0402 R275 1620105 Res network 0w06 2x2k2 j 0404 0404 R277 1620025 Res network 0w06 2x100k j 0404 0404 R310 1430778 Chip resistor 10 k 5 % 0.063 W 0402

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 59

Page 74

NSB-7

System Module PAMS Technical Documentation

R311 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R350 1430155 Chip resistor 15 5 % 0.1 W 0603 R351 1430155 Chip resistor 15 5 % 0.1 W 0603 R352 1430155 Chip resistor 15 5 % 0.1 W 0603 R353 1430155 Chip resistor 15 5 % 0.1 W 0603 R354 1825021 Chip varistor vwm14v vc46v 0402 0402 R371 1430137 Chip resistor 1.0 k 1 % 0.063 W 0402 R372 1430137 Chip resistor 1.0 k 1 % 0.063 W 0402 R373 1430137 Chip resistor 1.0 k 1 % 0.063 W 0402 R374 1430137 Chip resistor 1.0 k 1 % 0.063 W 0402 R403 1430702 Chip resistor 12 5 % 0.063 W 0402 R404 1430702 Chip resistor 12 5 % 0.063 W 0402 R510 1620003 Res network 0w03 4x100r j 0804 0804 R530 1620019 Res network 0w06 2x10k j 0404 0404 R532 1430832 Chip resistor 2.7 k 5 % 0.063 W 0402 R533 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R541 1620033 Res network 0w06 2x5k6 j 0404 0404 R546 1620033 Res network 0w06 2x5k6 j 0404 0404 R563 1430187 Chip resistor 47 k 1 % 0.063 W 0402 R564 1430746 Chip resistor 560 5 % 0.063 W 0402 R565 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R614 1430728 Chip resistor 120 5 % 0.063 W 0402 R640 1430738 Chip resistor 270 5 % 0.063 W 0402 R643 1430832 Chip resistor 2.7 k 5 % 0.063 W 0402 R645 1430832 Chip resistor 2.7 k 5 % 0.063 W 0402 R672 1430728 Chip resistor 120 5 % 0.063 W 0402 R732 1430746 Chip resistor 560 5 % 0.063 W 0402 R737 1430744 Chip resistor 470 5 % 0.063 W 0402 R738 1430706 Chip resistor 15 5 % 0.063 W 0402 R740 1430730 Chip resistor 150 5 % 0.063 W 0402 R741 1430730 Chip resistor 150 5 % 0.063 W 0402 R743 1430690 Chip jumper 0402 R744 1430710 Chip resistor 22 5 % 0.063 W 0402 R754 1430720 Chip resistor 56 5 % 0.063 W 0402 R763 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R764 1430776 Chip resistor 8.2 k 5 % 0.063 W 0402 R790 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R791 1430770 Chip resistor 4.7 k 5 % 0.063 W 0402 R792 1430780 Chip resistor 12 k 5 % 0.063 W 0402 R800 1430778 Chip resistor 10 k 5 % 0.063 W 0402 R801 1430774 Chip resistor 6.8 k 5 % 0.063 W 0402 R802 1430764 Chip resistor 3.3 k 5 % 0.063 W 0402 R805 1620505 Res network 0w04 2DB ATT 0404 R806 1430738 Chip resistor 270 5 % 0.063 W 0402 R807 1430738 Chip resistor 270 5 % 0.063 W 0402 R829 1430752 Chip resistor 820 5 % 0.063 W 0402 R830 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R831 1430718 Chip resistor 47 5 % 0.063 W 0402 R832 1430788 Chip resistor 22 k 5 % 0.063 W 0402 R833 1430762 Chip resistor 2.2 k 5 % 0.063 W 0402 R834 1430812 Chip resistor 220 k 5 % 0.063 W 0402 C101 2320548 Ceramic cap. 33 p 5 % 50 V 0402

Page 60 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 75

NSB-7

PAMS Technical Documentation System Module

C102 2320538 Ceramic cap. 12 p 5 % 50 V 0402 C103 2312411 Ceramic cap. 1.0 u 20 % 25 V 1206 C104 2320783 Ceramic cap. 33 n 10 % 10 V 0402 C105 2611719 Tantalum cap. 10 u 20 % 10 V 2.0x1.35x1.35 C106 2320481 Ceramic cap. 5R 1 u 10 % 0603 C107 2320481 Ceramic cap. 5R 1 u 10 % 0603 C108 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805 C113 2320508 Ceramic cap. 1.0 p 0.25 % 50 V 0402 C120 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C121 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C127 2320805 Ceramic cap. 100 n 10 % 10 V 0402 C128 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805 C129 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805 C131 2611719 Tantalum cap. 10 u 20 % 10 V 2.0x1.35x1.35 C132 2611741 Tantalum cap. 4.7 u 20 % 10 V 2.0x1.3x1.2 C133 2320481 Ceramic cap. 5R 1 u 10 % 0603 C140 2320481 Ceramic cap. 5R 1 u 10 % 0603 C142 2611719 Tantalum cap. 10 u 20 % 10 V 2.0x1.35x1.35 C150 2320481 Ceramic cap. 5R 1 u 10 % 0603 C151 2320481 Ceramic cap. 5R 1 u 10 % 0603 C152 2320481 Ceramic cap. 5R 1 u 10 % 0603 C153 2320481 Ceramic cap. 5R 1 u 10 % 0603 C154 2320481 Ceramic cap. 5R 1 u 10 % 0603 C163 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402 C165 2611737 Tantalum cap. 68 u 20 % 16 V 7.3x4.3x2.0 C169 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402 C200 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C201 2320783 Ceramic cap. 33 n 10 % 10 V 0402 C203 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C204 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C205 2610203 Tantalum cap. 2.2 u 20 % 10 V 2.0x1.3x1.2 C206 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C207 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C208 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C209 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C211 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C212 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C213 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402 C221 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C231 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C241 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C247 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C248 2320481 Ceramic cap. 5R 1 u 10 % 0603 C249 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C251 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C253 2320783 Ceramic cap. 33 n 10 % 10 V 0402 C257 2320783 Ceramic cap. 33 n 10 % 10 V 0402 C258 2320783 Ceramic cap. 33 n 10 % 10 V 0402 C259 2320783 Ceramic cap. 33 n 10 % 10 V 0402 C260 2320481 Ceramic cap. 5R 1 u 10 % 0603 C262 2320783 Ceramic cap. 33 n 10 % 10 V 0402 C263 2320783 Ceramic cap. 33 n 10 % 10 V 0402

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 61

Page 76

NSB-7

System Module PAMS Technical Documentation

C268 2320481 Ceramic cap. 5R 1 u 10 % 0603 C269 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C270 2610207 Tantalum cap. 10 u 20 % 2.0x1.3x1.2 C276 2320481 Ceramic cap. 5R 1 u 10 % 0603 C291 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C292 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C293 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C296 2610207 Tantalum cap. 10 u 20 % 2.0x1.3x1.2 C297 2610207 Tantalum cap. 10 u 20 % 2.0x1.3x1.2 C299 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C303 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402 C304 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402 C306 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C307 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C310 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805 C330 2320481 Ceramic cap. 5R 1 u 10 % 0603 C331 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C342 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C371 2320564 Ceramic cap. 150 p 5 % 50 V 0402 C372 2320564 Ceramic cap. 150 p 5 % 50 V 0402 C373 2320564 Ceramic cap. 150 p 5 % 50 V 0402 C400 2320481 Ceramic cap. 5R 1 u 10 % 0603 C401 2320805 Ceramic cap. 100 n 10 % 10 V 0402 C405 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C406 2320805 Ceramic cap. 100 n 10 % 10 V 0402 C510 2320135 Ceramic cap. 150 n 10 % 10 V 0603 C511 2320135 Ceramic cap. 150 n 10 % 10 V 0603 C512 2320135 Ceramic cap. 150 n 10 % 10 V 0603 C513 2320135 Ceramic cap. 150 n 10 % 10 V 0603 C520 2320485 Ceramic cap. 470 p 5 % 50 V 0603 C521 2320485 Ceramic cap. 470 p 5 % 50 V 0603 C522 2320485 Ceramic cap. 470 p 5 % 50 V 0603 C523 2320485 Ceramic cap. 470 p 5 % 50 V 0603 C530 2320631 Ceramic cap. 180 p 5 % 25 V 0402 C531 2320631 Ceramic cap. 180 p 5 % 25 V 0402 C532 2320781 Ceramic cap. 47 n 20 % 16 V 0603 C533 2320781 Ceramic cap. 47 n 20 % 16 V 0603 C534 2320783 Ceramic cap. 33 n 10 % 10 V 0402 C535 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C540 2320556 Ceramic cap. 68 p 5 % 50 V 0402 C541 2320556 Ceramic cap. 68 p 5 % 50 V 0402 C550 2320598 Ceramic cap. 3.9 n 5 % 50 V 0402 C557 2320554 Ceramic cap. 56 p 5 % 50 V 0402 C560 2320548 Ceramic cap. 33 p 5 % 50 V 0402 C561 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C562 2320546 Ceramic cap. 27 p 5 % 50 V 0402 C564 2320783 Ceramic cap. 33 n 10 % 10 V 0402 C612 2320564 Ceramic cap. 150 p 5 % 50 V 0402 C621 2320805 Ceramic cap. 100 n 10 % 10 V 0402 C630 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402 C631 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402 C640 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402

Page 62 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 77

NSB-7

PAMS Technical Documentation System Module

C642 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402 C643 2320540 Ceramic cap. 15 p 5 % 50 V 0402 C644 2320516 Ceramic cap. 1.5 p 0.25 % 50 V 0402 C645 2320540 Ceramic cap. 15 p 5 % 50 V 0402 C711 2320540 Ceramic cap. 15 p 5 % 50 V 0402 C712 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402 C714 2320779 Ceramic cap. 100 n 10 % 16 V 0603 C717 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C718 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402 C721 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C723 2320548 Ceramic cap. 33 p 5 % 50 V 0402 C731 2320596 Ceramic cap. 3.3 n 5 % 50 V 0402 C733 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C734 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C737 2320508 Ceramic cap. 1.0 p 0.25 % 50 V 0402 C743 2320540 Ceramic cap. 15 p 5 % 50 V 0402 C747 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402 C752 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C759 2320602 Ceramic cap. 4.7 p 0.25 % 50 V 0402 C761 2320536 Ceramic cap. 10 p 5 % 50 V 0402 C765 2320540 Ceramic cap. 15 p 5 % 50 V 0402 C772 2611741 Tantalum cap. 4.7 u 20 % 10 V 2.0x1.3x1.2 C782 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402 C783 2312401 Ceramic cap. 1.0 u 10 % 10 V 0805 C785 2320805 Ceramic cap. 100 n 10 % 10 V 0402 C790 2320518 Ceramic cap. 1.8 p 0.25 % 50 V 0402 C792 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C793 2320540 Ceramic cap. 15 p 5 % 50 V 0402 C794 2312215 Ceramic cap. 2.2 n 5 % 50 V 0805 C799 2320534 Ceramic cap. 8.2 p 0.25 % 50 V 0402 C801 2320564 Ceramic cap. 150 p 5 % 50 V 0402 C802 2312221 Ceramic cap. 4.7 n 5 % 25 V 0805 C803 2320564 Ceramic cap. 150 p 5 % 50 V 0402 C804 2320520 Ceramic cap. 2.2 p 0.25 % 50 V 0402 C805 2610203 Tantalum cap. 2.2 u 20 % 10 V 2.0x1.3x1.2 C806 2320508 Ceramic cap. 1.0 p 0.25 % 50 V 0402 C829 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C830 2320560 Ceramic cap. 100 p 5 % 50 V 0402 C831 2310793 Ceramic cap. 2.2 u 10 % 10 V 0805 C832 2320778 Ceramic cap. 10 n 10 % 16 V 0402 C833 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402 C834 2320744 Ceramic cap. 1.0 n 10 % 50 V 0402 C835 2320540 Ceramic cap. 15 p 5 % 50 V 0402 C836 2320544 Ceramic cap. 22 p 5 % 50 V 0402 C860 2320548 Ceramic cap. 33 p 5 % 50 V 0402 L103 3203705 Ferrite bead 0.015r 42r/100m 0805 0805 L104 3203705 Ferrite bead 0.015r 42r/100m 0805 0805 L200 3203709 Ferrite bead 0.5r 120r/100m 0402 0402 L271 3203709 Ferrite bead 0.5r 120r/100m 0402 0402 L272 3203709 Ferrite bead 0.5r 120r/100m 0402 0402 L303 3203709 Ferrite bead 0.5r 120r/100m 0402 0402 L304 3203709 Ferrite bead 0.5r 120r/100m 0402 0402

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 63

Page 78

NSB-7

System Module PAMS Technical Documentation

L505 3646053 Chip coil 4 n Q=28/800M 0402 L553 4551019 Dir.coup. 1880+-30mhz 1 4DB 2X1.22x1.25 L600 3646055 Chip coil 8 n 5 % Q=28/800 MHz 0402 L601 3646085 Chip coil 6 n 10 % Q=29/800 MHz 0402 L630 3646055 Chip coil 8 n 5 % Q=28/800 MHz 0402 L739 3646087 Chip coil 1 n Q=31/800M 0402 L751 3203705 Ferrite bead 0.015r 42r/100m 0805 0805 L752 3640043 Chip coil 4 n 10 % Q=50/1GHZ 0805 L758 3646027 Chip coil 33 n 5 % Q=7/100 MHz 0402 L800 3648808 Chip coil 10 % Q=50 1206 B100 4510219 Crystal 32.768 k +-30PPM 9PF B301 5140157 Buzzer 85db 3000hz 3.0v 8.5x8.5x 8.5x8.5x3 G800 4350237 Vco 3700-3980mhz 2.7v 20ma pcs G830 4510261 VCTCXO 26 M +-5PPM 2.7V GSM F101 5119019 SM, fuse f 1.5a 32v 0603 Z600 4511167 Saw filter 1960+-30 M Z620 4511167 Saw filter 1960+-30 M Z670 4550203 Ant.switch 1850-1990mhz 6.7x5x2 6.7x5x2 H400 9510608 Rf-can assembly dmc02694 hda56 T630 3640431 Transf balun 1920mhz+/-70mhz 0805 0805 T740 3640431 Transf balun 1920mhz+/-70mhz 0805 0805 T800 3640423 Transf balun 3.7ghz+/-300mhz 0805 0805 V100 1825023 Chip varistor vwm9v vc20v 0805 0805 V101 4210052 Transistor DTC114EE npn RB V EM3 V104 4113651 Trans. supr. QUAD 6 V SOT23-5 V116 4110067 Schottky diode MBR0520L 20 V 0.5 A SOD123 V250 4210119 Transistor BC849CW npn 30 V 0.1 A SOT323 V251 4210119 Transistor BC849CW npn 30 V 0.1 A SOT323 V252 4210052 Transistor DTC114EE npn RB V EM3 V254 4110089 Diode x 2 BAV70W 70 V .5 A 4 ns SOT323 V320 4860005 Led Green 0603 V321 4860005 Led Green 0603 V322 4860005 Led Green 0603 V323 4860005 Led Green 0603 V324 4860005 Led Green 0603 V325 4860005 Led Green 0603 V331 4864389 Led 0603 V332 4864389 Led 0603 V333 4864389 Led 0603 V334 4864389 Led 0603 V335 4864389 Led 0603 V336 4864389 Led 0603 V343 4110089 Diode x 2 BAV70W 70 V .5 A 4 ns SOT323 V360 4110089 Diode x 2 BAV70W 70 V .5 A 4 ns SOT323 V760 4110078 Schdix2 bas70-05w 70v 70ma sot323 SOT323 V800 4210119 Transistor BC849CW npn 30 V 0.1 A SOT323 V903 4210185 Transistor SOT343 V905 4210119 Transistor BC849CW npn 30 V 0.1 A SOT323 D200 4370677 Mad2wd1 v18 rom5 f741541g ubga144 UBGA144 D210 4340747 Combomemory 16m flash+2m sram csp CSP N100 4370467 Ccont2i wfd163kg64t/8 lfbga8x8 N101 4370621 Chaps v2.0 u423v20g36t lbga6x6

Page 64 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 79

NSB-7

PAMS Technical Documentation System Module

N220 4340413 IC, regulator TK11230BMC 3.0 V SOT23L N250 4370643 Cobba_gjp v4.1 v257bg64t/8 bga64 BGA64 N310 4370433 Uiswitch sttm23av20t tssop20 TSSOP20 N400 4860081 Irda qsdl-m134#021 115.2kbps 2v7 2V7 N401 4340335 IC, regulator TK11228AM SSO6 N505 4370667 Hagar 3 sttza8hg80t lfbga80 LFBGA80 N600 4340719 IC, regulator TK11247BMC 4.7 V SOT23L N702 4350241 IC, pow.amp. S330 5209001 SM, sw tact spst 12v 50ma side k KEY M300 9854352 PCB UX7V 4.5X4.5X1.6 D 140/PA

9854432 PCB RB9 94.7X40.0X1.0 M8 4/PA

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 65

Page 80

NSB-7

System Module PAMS Technical Documentation

This Page Intentionally Blank

Page 66 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 81

Programmes After Market Services

NSB-7 Series Transceivers

UI Module

Issue 1 06/00 ãNokia Mobile Phones Ltd.

Page 82

NSB-7

UI Module PAMS Technical Documentation

Page No

UI Module.................................................................................................................................1

UIF Module ................................................................................................................................................ 4

Introduction ........................................................................................................................................... 4

BB Interface......................................................................................................................................... 4

LCD Module Interface....................................................................................................................... 6

Bottom Connector Signals .............................................................................................................. 7

Functional Description ........................................................................................................................ 8

Audio Control...................................................................................................................................... 8

Display Circuit.................................................................................................................................. 12

Keyboard............................................................................................................................................ 13

Power Key ......................................................................................................................................... 13

Backlighting ..................................................................................................................................... 14

Buzzer................................................................................................................................................. 15

Speaker .............................................................................................................................................. 16

Microphone ...................................................................................................................................... 17

Vibra Alerting Device ..................................................................................................................... 18

IR Module.......................................................................................................................................... 19

Page 2 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 83

NSB-7

PAMS Technical Documentation UI Module

List of Figures

Page No

Fig 1 User Interface ....................................................................................................................................... 4

Fig 2 View through LCD Cell ....................................................................................................................... 6

Fig 3 Audio Control ....................................................................................................................................... 8

Fig 4 External Audio Connections............................................................................................................. 9

Fig 5 Display Circuit ...................................................................................................................................... 12

Fig 6 Keyboard ................................................................................................................................................ 13

Fig 7 Backlighting .......................................................................................................................................... 14

Fig 8 Buzzer ..................................................................................................................................................... 15

Fig 9 Speaker................................................................................................................................................... 16

Fig 10 Microphone......................................................................................................................................... 17

Fig 11 Vibra Alerting Device ....................................................................................................................... 18

Fig 12 IR Transmission................................................................................................................................. 19

Fig 13 IR Module............................................................................................................................................ 20

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 3

Page 84

NSB-7

UI Module PAMS Technical Documentation

UIF Module

Introduction

UI module is implemented on the same PCB board with BB-module and RF-module. UI HW parts are LCD, backlighting, audio parts, IR, keyboard, power key and vibra.

Buzzer Keys

BASEBAND

LED

LCD

Vibra

Figure 1: User Interface

BB Interface

Signal Parameter Min Typ Max Unit Notes

IRONX IR-module on/off 0

FBUS_RX IR receive pulse

IR receive no pulse

FBUS_TX

IR transmit pulse IR transmit no pulse

VIBRA

From VB

ROW (0:4) ROWS 0

COL (0:4) COL0 0

0.7 x VBB

0.7 x VBB 0

0.9 1.0 115

0.7 x VBB

0.3 x VBB VBB

VBB

0.3 x VBB

1.1 140

0.3 x VBB VBB

VIR on state

lout@2mA

lout@2mA V V mA

V Keyboard matrix row

V Keyboard matrix

column

VB Battery Voltage 3.0 4.8 V Battery

voltage (for lights)

Page 4 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 85

NSB-7

PAMS Technical Documentation UI Module

Signal Parameter Min Typ Max Unit Notes

PWRONX 0

0.7 x VBB

ROW5/ LCDCD

SCL Serial clock for LCD 0

SDA Serial data for LCD 0.3 x VBB

LCDEN LCD enable 0

LCDRSTX Reset 0

GND 0 0 V Ground

BUZZER 0

LCD command/data 0

0.7 x VBB

0.7 x VBB 440 0

0.3 x VBB VBB

VBB

0.3 x VBB VBB

0.3 x VBB VBB 4700 50

V Power on key

V keyboard matrix row 5

LCD driver code/data

selection

V LCD driver serial clock

V LCD driver serial data

V LCD driver chip select

VLCD driver reset

V V Hz %

PWM low level

PWM high level

Buzzer PWM fre-

quency

PWM duty cycle

VBB 2.7 2.8 2.9 V Logic supply voltage

LIGHT 0

0.7 x VBB

EARN 17.6 788 mV Connected to COBBA

EARP 17.6 788 mV Connected to COBBA

CCUT Charging control 0

0.7 x VBB

0.3 x VBB VBB

V Illumination control

EARN output.

EARP output.

Stops charging

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 5

Page 86

NSB-7

UI Module PAMS Technical Documentation

LCD Module Interface

Line

Symbol

Parameter Min Typical Max Unit Notes

1 VBB Supply voltage 2.7 2.8 2.9

300

2 SCLK Serial clock input 0

3 SDA Serial data input 0

0.7 x VBB

4 LCDCDX Control/display

data flag input

5 LCDCSX Chip select input 0

6 OSC External clock for

LCD

7GND Ground 0 V

8VOUT DC/DC voltage

converter output

9 LCDRSTX Reset 0

0.7 x VBB

30.4 32.0 33.6 kHz Connected to VBB

0.7 x VBB

4.0 VBB

0.3 x VBB VBB

V uA

MHz VBB=2.7V

V Control

VActive

Data

on PCB

Display Driver

Viewing through LCD cell

Figure 2: View through LCD Cell

Page 6 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 87

NSB-7

PAMS Technical Documentation UI Module

Bottom Connector Signals

Name Min Typ Max Unit Notes

XMICP, XMICN

XEARP, XEARN

1.47

2.5 100

2.2

47 10

6.8

22 10

2.8

1.55

2.9 600 350

300

1.0 626

1500

kΩ Vpp V V µA mV

W µF W kΩ Vpp mV kΩ W V

Input AC impedance Maximum signal level Mute (output DC level) Unmute (output DC level) Bias current Maximum signal level

Output AC impedance (ref.GND) Series output capacitance Load AC impedance to GND (Headset) Load AC impendance to GND (Accessory) Maximum output level (no load) Output signal level Load DC resistance to GND (Accessory) Load DC resistance to GND (Headset) DC voltage (100k pull-up to VBB)

HEADDET 21 µA When accessory is not connected

An external headset device is connected to the system connector XMIC and XEAR lines, from which the signals are routed to COBBA MIC3 microphone inputs and HF earphone outputs.

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 7

Page 88

NSB-7

UI Module PAMS Technical Documentation

Functional Description

Audio Control

The audio control and processing is taken care of by the COBBA-GJP, which contains the audio and RF codecs, and the MAD2, which contains the MCU, ASIC and DSP blocks handling and processing the audio signals.

DSP

MAD

MCU

Buzzer Driver in

UISWITCH

Buzzer

MICP/N

XMICP/N

XEARP/N

Bias + EMC

EMC + Acc.

Interf.

EMC

MIC2 MIC1

MIC3

HFCM

AuxOut

EARP/N

Preamp

Amp Multipl.

Multipl.Premult.

COBBA

Pre & LP

Figure 3: Audio Control

The baseband supports three microphone inputs and two earphone outputs. The inputs can be taken from an internal microphone, a headset microphone or PPH-1 microphones. The microphone signals from different sources are connected to separate inputs at the COBBA-GJP ASIC. Inputs for the microphone signals are differential type.

The MIC1 inputs are used for a headset microphone that can be connected directly to the HS/HF connector. The internal microphone is connected to MIC2 inputs. In COBBA there are also three audio signal outputs of which dual ended EAR lines are used for internal ear piece and HF line accessory audio output. The third audio output AUXOUT is used for bias supply to the headset microphone. PData(2) is used for PPH-1 mute control.

The output for the internal earphone is a dual ended type output capable of driving a dynamic type speaker. The output for the external accessory and the headset is dual ended (differential). Input and output signal source selection and gain control is performed inside the COBBA-GJP ASIC according to control messages from the MAD2. Keypad tones, DTMF, and other audio tones are generated and encoded by the MAD2 and transmitted to the COBBA-GJP for decoding.

Page 8 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 89

NSB-7

PAMS Technical Documentation UI Module

External audio connections

The external audio connections are presented on the next page. A headset and PPH-1 can be connected directly to the system connector. The headset microphone bias is supplied from COBBA AUXOUT output and fed to microphone through XMICP line.

10k

CTIM

CHAPS

Baseband

MAD

HeadDet

CCUT

HookDet

CCONT

COBBA

EAD

AUXOUT

PData(2)

HFCM

MIC1P

33n

10k

100k

10ı

100k

2k2

100k

2.8 V

470R

100R

470R

220k

2.8 V

100k

33k

XEARP

XEARN

33k

100R

XMICP

MIC1N

33n

MIC3N

MIC3P

33n

2k2

100R

XMICN

Figure 4: External Audio Connections

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 9

Page 90

NSB-7

UI Module PAMS Technical Documentation

Analog audio accessory detection

In XERP signal there is a 100 kΩ pull-up and 33k pull-down in the transceiver for HeadDet. The HeadDet is pulled up when an accessory is connected, and pulled down when disconnected. To get HeadDet working properly the system connector must be assembled otherwise the transceiver will assume that some accessory is connected. In XMICN signal there is a 1.2 kΩ pull-down in the transceiver and serial 1.2 kΩ from AUXOUT to XMICP. The XMICN is connected to the transistor which is then connected to the HookDet line (in MAD).

External accessory notices powered-up phone by detecting voltage in HeadDet line.

Accessory connected HookDet*) HeadDet**) Notes

No accessory connected High Low

Headset with a button switch pressed Low High XEAR and XMIC loaded (dc)

Headset with a button switch released High High XEAR and XMIC loaded (dc)

Hands free (PPH-1) Low High XMIC loaded (dc)

‘) HookDet is used only for detect button in headset.

‘’’) HeadDet is used only for detect that some accessory is connected into system connector.

NOTE: Charging must stop when the detection sequences are done! CCUT signal at high stops charging.

Headset detection

The external headset device is connected to the headset connector, from which the signals are routed to COBBA headset microphone inputs and earphone outputs. In the XMICN line there is a 1.0 kΩ pulldown in the transceiver. The microphone is a low resistance pull-up compared to the transceiver pulldown.

When there is no call going, the AUXOUT is in high impedance state and the XMICN and XMICP are pulled down. When a headset is connected, the XMICP is pulled up. The switch inside the system connector is connected to the HeadDet line (in MAD), an interrupt is given due to both connection and disconnection.

NOTE: If the headset is connected switch closed, the transceiver can not detect if the headset or PPH-1 in power off mode is connected. When switch is released to open the transceiver can not any more detect the headset without polling by SW.

Page 10 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 91

NSB-7

PAMS Technical Documentation UI Module

Headset switch detection

In the XMICN line there is a 1.0 kΩ pulldown in the transceiver. The microphone is a low resistance pull-up compared to the transceiver pulldown. When a remote control switch is open, there is a capacitor in parallel with the microphone, so the XMICN is pulled up and HookDet pulled closed, the XMICN is pulled down via the microphone and HookDet is pulled up. So both pressing and releasing of the button gives an interrupt when AUXOUT is set to 2.1 V.

PPH-1 detection

The external Plug and Play PPH-1 device is connected to the system connector, from which the signals are routed to COBBA headset microphone inputs and earphone outputs. In the XMICN line there is a 1.0 kΩ pull-down in the transceiver. The PPH-1 has a low resistance pull-up compared to the transceiver pull-down. When there is no call going, the AUXOUT is in high impedance state and the XMICN and XMICP is pulled down. When a powered PPH-1 is connected, the XMICP is pulled up. The switch inside the system connector is connected to the HeadDet line (in MAD), an interrupt is given due to both connection and disconnection.

The PPH-1 device has two operating mode devices with external microphone and without external microphone. When internal microphone is used the detection signal (EAD) is higher than when external microphone is used.

NOTE I: If the PPH-1 is connected in power off mode, the transceiver can not detect if the device is a headset or a PPH-1 connected. When PPH-1 is powered on it is possible to detect when case of PPH-1.

NOTE II: If the external microphone is connected from or disconnected to PPH-1 it is not possible for the transceiver to detect when that happens.

Internal audio connections

The speech coding functions are performed by the DSP in the MAD2 and the coded speech blocks are transferred to the COBBA for digital to analog conversion, down link direction. In the up link direction the PCM coded speech blocks are read from the COBBA by the DSP.

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 11

Page 92

NSB-7

UI Module PAMS Technical Documentation

Display Circuit

The display circuit includes LCD module UX7 and two capacitors. The LCD module is COG (Chip on Glass) technology. The connection method for chip on the glass is ACF, Adhesive Conductive Film. The LCD module is connected to the UI board with STAX elastomer. Capacitors are placed on the PCB.

The display driver includes HW-reset, voltage tripler or quadrupler which depends on temperature, temperature compensating circuit and low power control. Driver includes 84x48 RAM memory which is used when some elements are created on the display. Elements can be created with software. Driver doesn't include CG-ROM. One bit in RAM is the same as one pixel on the display.

GENSIO(1:0) ROW5

LCDEN

LCDRSTX

Figure 5: Display Circuit

Page 12 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 93

NSB-7

PAMS Technical Documentation UI Module

Keyboard

Matrix size is 5 rows and 5 columns. Scanning is used for keyboard reading. Rows and columns are connected to the MAD interface

Figure 6: Keyboard

ROW/COL 0 1 2 3 4

0 SLIDE SWT Side Key Send End/Mode Side key

1 NC Soft left Up Down Soft right

2 NC 1 47*

3 NC 2 580

4 PWR switch3 69#

NC = Not Connected

Power Key

Micro switch is used as a power key on the UI module. Circuitry includes the micro

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 13

Page 94

NSB-7

UI Module PAMS Technical Documentation

switch and two diodes which are needed for MAD interface. Power key is connected to CCONT. Power switch is active in LOW state. Power key is connected to ROW4.

Backlighting

Switching circuits for backlighting are placed on the UI module. Display and keyboard lighting are connected together. When LIGHT-signal is HIGH the lights are on and when LIGHT-signal is LOW state lights are off.

Figure 7: Backlighting

Backlighting is made by LED’s, three LED’s on the right and three on the left side of the display. LED’s are compatible with CL270-YG and those are side illuminating. Light is on when LIGHT-signal is in the HIGH state.

The keyboard backlighting is made by 6 LED’s.. The LED’s are compatible with CL190-YG. Backlighting is on when LIGHT-signal is on HIGH state.

Page 14 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 95

NSB-7

PAMS Technical Documentation UI Module

Buzzer

Alerting tones and/or melodies as a signal of an incoming call are generated with a buzzer that is controlled with a PWM signal by the MAD via UISWITCH. Also key press and user function response beeps are generated with the buzzer. The buzzer is a SMD device and is placed on the mother board. Target for SPL is 100dB (A) at 5cm.

Figure 8: Buzzer

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 15

Page 96

NSB-7

UI Module PAMS Technical Documentation

Speaker

Speaker circuit includes pads for speaker and 2 capacitors, 2 ferrites for EMC protection.

The speaker is sealed to the A-cover with gasket and UI PCB with supporting light guide. With that the frequency response is more constant. The speaker does not need holes for PCB. This gives reliable sound quality for the phone and it can be estimated in several environments. Arrangement is a leak tolerant speaker.

The low impedance, dynamic type earphone is connected to a differential output in the COBBA audio codec. The electrical specifications for the earphone output are shown below. The voltage level at each output is given as reference to ground. Earphone levels are given to 32 ohm load.

Nominal Maximum Notes

COBBA output, differential, 6dB gain

Earpiece sound pressure (sensitivity +28dBPa/V 1kHz)

17.6mV 788mV ENGINE - UI Interface; Estimate, must be checked with final earpiece construction

-7dBPa +26dBPa Measured as shielded (in brackets with leak ring)

Figure 9: Speaker

Page 16 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 97

NSB-7

PAMS Technical Documentation UI Module

Microphone

The internal microphone is placed on the B-cover. Microphone is OMNI directional. The microphone requires a bias current to operate. The bias current is generated from VCOBBA supply with a transistor. EMC protection parts are implemented on the motherboard.

Pin Name Min Typ Max Unit Notes

X300/2 MICP 0.55 4.1 mV Connected to COBBA MIC2N input. The maxi-

mum value corresponds to 1kHz, 0 dBmO network level with input amplifier gain set to 32 dB. Typical value is maximum value - 16 dB

X300/1 MICN 0.55 4.1 mV Connected to COBBA MIC2P input. The maxi-

mum value corresponds to 1kHz, 0 dBmO network level with input amplifier gain set to 32 dB. Typical value is maximum value - 16 dB

Figure 10: Microphone

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 17

Page 98

NSB-7

UI Module PAMS Technical Documentation

Vibra Alerting Device

A vibra alerting device is used for giving silent signal to the user of an in coming call. Vibra is located in the phone. The vibra is controlled with a PWM signal by the MAD via UISWITCH.

Signal Parameter Min Typ Max Unit Notes

M300/1 1.0 1.1 2.0 V Measured against

M300/2

vibra

Rated load current Rated load speed 7000

115 8000

140 12000

mA rpm

Figure 11: Vibra Alerting Device

Page 18 ãNokia Mobile Phones Ltd. Issue 1 06/00

Page 99

NSB-7

PAMS Technical Documentation UI Module

IR Module

An infrared transceiver module is designed to substitute an electrical cable between the phone and a PC. The infrared transceiver module is a stand alone component capable to perform infrared transmitting and receiving functions by transforming signals transmitted in infrared light from and to electrical data pulses running in two wire asynchronous databus. IR is located at the left bottom corner of the product.

Signal Parameter Min Typ Max Unit Notes

IRONX IR-module on/off 0.7 x VBB

FBUS_RX IR receive no pulse

IR receive pulse

FBUS_TX IR transmit pulse

IR transmit no pulse

0.7 x VBB 0

VBB

0.3 x VBB

VBB

0.3 x VBB

VBB

0.3 x VBB

V lout@2mA, IR is at

off state IR, is at on state

Vlout@2mA

The module is activated with an IRONX signal by the MAD, which supplies power to the module. The IR datalines are connected to the MAD accessory interface AccIf via FBUS. The AccIf in MAD performs pulse encoding and shaping for transmitted data and detection and decoding for received data pulses.

The data is transferred over the IR link using serial data at speeds 9.6, 19.2, 38.4, 57.6 or

115.2 kbits/s, which leads to maximum throughput of 92.160 kbits/s. The IR module used does not comply with the IrDA 1.0 specification (InfraRed Data Association), which is based on the HP SIR (Hewlett-Packard`s Serial InfraRed) concept. Maximum transmission distance is set to 60cm.

In IR transmission a light pulse corresponds to 0-bit and a "dark pulse" corresponds to 1bit.

constant pulse

IR TX

UART TX

startbit stopbit1 0100110

Figure 12: IR Transmission

The FBUS cannot be used for external accessory communication, when the infrared mode

Issue 1 06/00 ãNokia Mobile Phones Ltd. Page 19

Page 100

NSB-7

UI Module PAMS Technical Documentation

is selected. Infrared communication reserves the FBUS completely.

Figure 13: IR Module

Page 20 ãNokia Mobile Phones Ltd. Issue 1 06/00

Nokia NSB-7 Service Manual

Specifications and Main Features

Frequently Asked Questions

User Manual

Amendment Record Sheet

NSB-7 Overall Manual Contents

Company Policy

IMPORTANT

Warnings and Cautions

General Information

Table of Contents

List of Figures

System Module

Table of Contents

List of Figures

UI Module

Table of Contents

List of Figures