NIKO-SEM P1403EVG Schematics
NIKO
-
SEM
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
P-Channel Logic Level Enhancement
Field Effect Transistor
SOP-8
Halogen-Free & Lead-Free
Mode
P1403EVG
D
PRODUCT SUMMARY
V
(BR)DSS
-30
R
DS(ON)
14mΩ
ID
-11
G
4 :GATE
5,6,7,8 :DRAIN
1,2,3 :SOURCE
S
ABSOLUTE MAXIMUM RATINGS (T
= 25 °C Unless O therwise Noted)
A
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
100% UIS tested
TA = 25 °C -11
Continuous Drain Current
= 70 °C
T
A
I
D
Pulsed Drain Current1 IDM -50
Avalanche Current IAS -43
Avalanche Energy L = 0.1mH EAS 90
TA = 25 °C 2.5
Power Dissipation
= 70 °C
T
A
Operating Junction & Storage Temperature Range Tj, T
P
D
-55 to 150
stg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
Junction-to-Case
R
Junction-to-Ambient R
1
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (T
= 25 °C, Unless Otherwise Noted)
A
PARAMETER SYMBOL
θJ
c
θJA
TEST CONDITIONS
STATIC
25 °C / W
50 °C / W
MIN
-9
1.6
LIMITS
TYP MAX
A
mJ
W
°C
UNIT
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
REV 1.3
(BR)DSS
GS(th)
VDS = 0V, VGS = ±25V ±100 nA
GSS
V
= 0V, ID = -250µA
GS
V
= VGS, ID = -250µA
DS
-30
-1
-1.7 -3
VDS = -24V, VGS = 0V -1
DSS
V
= -20V, VGS = 0V, TJ = 125 °C
DS
-10
1
V
µA
Jun-22-2010
NIKO
-
SEM
mΩ
www.DataSheet.co.kr
Datasheet pdf - http://www.DataSheet4U.net/
Drain-Source On-State
Resistance
1
P-Channel Logic Level Enhancement
Field Effect Transistor
R
DS(ON)
VGS = -4.5V, ID = -9A 14 22
V
= -10V, ID = -12A 9 14
GS
SOP-8
Halogen-Free & Lead-Free
Mode
P1403EVG
Forward Transconductance1 gfs VDS = -10V, ID = -12A 28
DYNAMIC
(BR)DSS
= -12A
I
D
, VGS = -10V,
349
48
26
9
50
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Resistance
Q
Total Gate Charge2
Q
Gate-Source Charge2 Qgs 7
Gate-Drain Charge2 Qgd
Turn-On Delay Time2 t
Rise Time2 tr VDS = -15V, 16
Turn-Off Delay Time2 t
Fall Time2 tf 100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TA = 25 °C)
Continuous Current IS -2.1 A
2510
iss
V
449
oss
rss
Rg V
g(VGS=10V)
g(VGS=4.5V)
12
d(on)
d(off)
= 0V, VDS = -15V, f = 1MHz
GS
= 0V, VDS = 0V, f = 1MHz 7.3
GS
VDS = 0.5V
I
≅ -1A, VGS = -10V, RGS = 6Ω
D
S
pF
Ω
nC
nS
Forward Voltage1 VSD IF = IS, VGS = 0V -1.2 V
1
Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.
2
Independent of operating temperature.
REMARK: THE PRODUCT MARKED WITH “P1403EVG”, DATE CODE or LOT #
REV 1.3
Jun-22-2010
2
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