NIKO-SEM P1403EV8 Schematics

NIKO
-
SEM
1,2,3 :SOURCE
P-Channel Logic Level Enhancement Mode
Field Effect Transistor
SOP-8
P1403EV8
D
PRODUCT SUMMARY
V
(BR)DSS
-30
R
DS(ON)
14mΩ
ID
-12
G
4 :GATE 5,6,7,8 :DRAIN
S
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted)
PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±25 V
Continuous Drain Current
Pulsed Drain Current1 IDM -65
Avalanche Current IAS -39
Avalanche Energy L = 0.1mH EAS 89
Power Dissipation
TA = 25 °C -12
ID
TA = 70 °C
TA = 25 °C 3
PD
TA = 70 °C
100% UIS tested
-10
2
A
mJ
W
Operating Junction & Storage Temperature Range Tj, T
stg
THERMAL RESISTANCE RATINGS
THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS
R
Junction-to-Case
Junction-to-Ambient R
1
Pulse width limited by maximum junction temperature.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted)
PARAMETER SYMBOL
Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate-Body Leakage I
Zero Gate Voltage Drain Current I
(BR)DSS
GS(th)
VDS = 0V, VGS = ±25V ±100 nA
GSS
DSS
θJ
c
θJA
TEST CONDITIONS
STATIC
VGS = 0V, ID = -250µA
VDS = VGS, ID = -250µA
VDS = -24V, VGS = 0V -1
VDS = -20V, VGS = 0V, TJ = 125 °C
-55 to 150
25 °C / W
40 °C / W
LIMITS
MIN TYP MAX
-30
-1 -1.5 -3
-10
°C
UNIT
V
µA
Drain-Source On-State Resistance1
REV 1.0
R
DS(ON)
VGS = -4.5V, ID = -9A 17.8 22
mΩ
VGS = -10V, ID = -12A 11.3 14
Jan-29-2010
1
NIKO
-
SEM
Ω
Forward Transconductance1 gfs VDS = -10V, ID = -12A 28
P-Channel Logic Level Enhancement Mode
Field Effect Transistor
DYNAMIC
SOP-8
P1403EV8
S
Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Gate Resistance
Total Gate Charge2 Qg 38
Gate-Source Charge2 Qgs 7
Gate-Drain Charge2 Qgd
Turn-On Delay Time2 t
Rise Time2 tr VDS = -15V, 16
Turn-Off Delay Time2 t
Fall Time2 tf 100
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TJ = 25 °C)
Continuous Current IS -2.5 A
Forward Voltage1 VSD IF = -12A, VGS = 0V -1.2 V
1
Pulse test : Pulse Width 300 µsec, Duty Cycle 2.
2
Independent of operating temperature.
REMARK: THE PRODUCT MARKED WITH “P1403EV8”, DATE CODE or LOT #
2260
iss
410
oss
rss
Rg VGS = 15mV, VDS = 0V, f = 1MHz 4.8 5.8
12
d(on)
d(off)
VGS = 0V, VDS = -15V, f = 1MHz
VDS = 0.5V
ID -1A, VGS = -10V, RGS = 6Ω
, VGS = -10V,
(BR)DSS
ID = -12A
204
6
50
pF
nC
nS
REV 1.0
Jan-29-2010
2
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