NIKO P3055LL Datasheet

1

DEC-03-2001

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P3055LL

SOT-223

NIKO-SEM

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

Gate-Source Voltage VGS ±20 V

TC = 25 °C 6

Continuous Drain Current

T

C

= 100 °C

I

D

3.6

Pulsed Drain Current1 I

DM

22

A

Avalanche Energy L = 0.1mH EAS 60

Repetitive Avalanche Energy2 L = 0.05mH EAR 3

mJ

TC = 25 °C 3

Power Dissipation

T

C

= 100 °C

P

D

1.5

W

Operating Junction & Storage Temperature Range Tj, T

stg

-55 to 150

Lead Temperature (1/16” from case for 10 sec.) TL 275

°C

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS

Junction-to-Case

R

θJC

12

Junction-to-Ambient

R

θJA

42

°C / W

1

Pulse width limited by maximum junction temperature.

2

Duty cycle ≤ 1%

ELECTRICAL CHARACTERISTICS (T

C

= 25 °C, Unless Otherwise Noted)

LIMITS

PARAMETER SYMBOL TEST CONDITIONS

MIN TYP MAX

UNIT

STATIC

Drain-Source Breakdown Voltage V

(BR)DSS

V

GS

= 0V, ID = 250µA

25

Gate Threshold Voltage V

GS(th)

V

DS

= VGS, ID = 250µA

0.8 1.2 2.5

V

Gate-Body Leakage I

GSS

V

DS

= 0V, VGS = ±20V ±250 nA

VDS = 20V, VGS = 0V 25

Zero Gate Voltage Drain Current I

DSS

V

DS

= 20V, VGS = 0V, TJ = 125 °C 250

µA

On-State Drain Current1 I

D(ON)

V

DS

= 10V, VGS = 10V 6 A

1. GATE

2. DRAIN

3. SOURCE

PRODUCT SUMMARY

V

(BR)DSS

R

DS(ON)

I

D

25

120mΩ

6A

G

D

S

2

DEC-03-2001

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P3055LL

SOT-223

NIKO-SEM

VGS = 5V, ID = 6A 150 180

Drain-Source On-State
Resistance

1

R

DS(ON)

V

GS

= 10V, ID = 6A 120 160

mΩ

Forward Transconductance1 g

fs

V

DS

= 15V, ID = 6A 16 S

DYNAMIC

Input Capacitance C

iss

450

Output Capacitance C

oss

200

Reverse Transfer Capacitance C

rss

V

GS

= 0V, VDS = 15V, f = 1MHz

60

pF

Total Gate Charge2 Q

g

15

Gate-Source Charge2 Q

gs

2.0

Gate-Drain Charge2 Q

gd

VDS = 0.5V

(BR)DSS

, VGS = 10V,

I

D

= 3A

7.0

nC

Turn-On Delay Time2 t

d(on)

6.0

Rise Time2 t

r

V

DS

= 15V, RL = 1Ω

6.0

Turn-Off Delay Time2 t

d(off)

I

D

≅ 10A, VGS = 10V, RGS = 2.5Ω

20

Fall Time2 t

f

5.0

nS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current IS 6

Pulsed Current3 I

SM

35

A

Forward Voltage1 V

SD

I

F

= IS, VGS = 0V 1.5 V

Reverse Recovery Time trr 30 nS

Peak Reverse Recovery Current I

RM(REC)

I

F

= IS, dlF/dt = 100A / µS

15 A

Reverse Recovery Charge Qrr 0.043

µC

1

Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2％.

2

Independent of operating temperature.

3

Pulse width limited by maximum junction temperature.

REMARK: THE PRODUCT MARKED WITH “P3055LL”, DATE CODE or LOT #