NIKO P07D03LV Datasheet

NIKO-SEM

Dual N-Channel Enhancement Mode

Field Effect Transistor

P07D03LV

SOP-8

PRODUCT SUMMARY

V

(BR)DSS

30

R

DS(ON)

20mΩ

I

D

7A

G : GATE
D : DRAIN
S : SOURCE

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C Unless Otherwise Noted)

C

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

Drain-Source Voltage VDS ±30 V

Gate-Source Voltage VGS ±20 V

Continuous Drain Current

T

= 70 °C

C

Pulsed Drain Current1 I

I

D

40

DM

6

A

TC = 25 °C 2

TC = 25 °C 7

Power Dissipation

T

= 70 °C

C

Junction & Storage Temperature Range Tj, T

P

D

-55 to 150

stg

1.3

W

°C

Lead Temperature (1/16” from case for 10 sec.) TL 275

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS

Junction-to-Ambient

1

Pulse width limited by maximum junction temperature.

2

Duty cycle ≤ 1%

R

θJA

62.5 °C / W

ELECTRICAL CHARACTERISTICS (T

PARAMETER SYMBOL TEST CONDITIONS

= 25 °C, Unless Otherwise Noted)

C

LIMITS

MIN TYP MAX

UNIT

STATIC

Drain-Source Breakdown Voltage V

Gate Threshold Voltage V

Gate-Body Leakage I

Zero Gate Voltage Drain Current I

(BR)DSS

GS(th)

V

GSS

DSS

VDS = 20V, VGS = 0V, TJ = 55 °C 10

On-State Drain Current1 I

V

D(ON)

V

= 0V, ID = 250µA

GS

V

= VGS, ID = 250µA

DS

= 0V, VGS = ±20V ±100 nA

DS

30

0.7 1 1.4

VDS = 24V, VGS = 0V 1

= 5V, VGS = 10V 25 A

DS

1

OCT-14-2002

V

µA

NIKO-SEM

Dual N-Channel Enhancement Mode

Field Effect Transistor

P07D03LV

Drain-Source On-State
Resistance

1

R

DS(ON)

V

Forward Transconductance1 g

V

fs

VGS = 2.5V, ID = 5A 40 48

V

= 4.5V, ID = 6A 23 30

GS

= 10V, ID = 7A 18 25

GS

= 15V, ID = 5A 16 S

DS

DYNAMIC

SOP-8

mΩ

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Total Gate Charge2 Q

Gate-Source Charge2 Q

Gate-Drain Charge2 Q

Turn-On Delay Time2 t

Rise Time2 t

Turn-Off Delay Time2 t

Fall Time2 t

830

iss

V

185

oss

rss

9 13

g

2.8

gs

gd

5.7

d(on)

V

r

d(off)

5

f

= 0V, VDS = 15V, f = 1MHz

GS

VDS = 0.5V

I

≅ 1A, VGS = 10V, R

D

, VGS = 5V,

(BR)DSS

I

= 7A

D

= 15V 10

DS

GEN

= 6Ω

80

3.1

18

pF

nC

nS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current IS 3

A

Pulsed Current3 I

Forward Voltage1 V

Reverse Recovery Time trr

6

SM

I

SD

= 1A, VGS = 0V 1 V

F

I

= 5A, dlF/dt = 100A / µS

F

15.5 nS

Reverse Recovery Charge Qrr 7.9 nC

1

Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

2

Independent of operating temperature.

3

Pulse width limited by maximum junction temperature.

REMARK: THE PRODUCT MARKED WITH “P07D03LV”, DATE CODE or LOT #

2

OCT-14-2002