NIKO P01N02LMB Datasheet

NIKO-SEM

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

P01N02LMB

SOT-23 (M3)

D

PRODUCT SUMMARY

V

(BR)DSS

25V

R

DS(ON)

180mΩ

I

D

1.2A

G

1. GATE

2. DRAIN

3. SOURCE

S

ABSOLUTE MAXIMUM RATINGS (TC = 25 °C Unless Otherwise Noted)

PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS

Gate-Source Voltage VGS ±15 V

Continuous Drain Current

T

= 100 °C

C

Pulsed Drain Current1 I

I

D

12

DM

1.0

A

TC = 25 °C 0.6

TC = 25 °C 1.2

Power Dissipation

T

= 100 °C

C

Operating Junction & Storage Temperature Range Tj, T

P

D

-55 to 150

stg

0.5

W

°C

Lead Temperature (1/16” from case for 10 sec.) TL 275

THERMAL RESISTANCE RATINGS

THERMAL RESISTANCE SYMBOL TYPICAL MAXIMUM UNITS

Junction-to-Case
Junction-to-Ambient

1

Pulse width limited by maximum junction temperature.

R
R

JC

θ

JA

θ

65

°C / W

230

ELECTRICAL CHARACTERISTICS (T

PARA METER

= 25 °C, Unless Otherwise Noted)

C

SYMBOL TEST CONDITIONS

LIMITS

MIN TYP MAX

UNIT

STATIC

Drain-Source Breakdown Voltage V
Gate Threshold Voltage V
Gate-Body Leakage I

Zero Gate Voltage Drain Current I

On-State Drain Current1 I

Drain-Source On-State Resistance1 R

Forward Transconductance1 g

(BR)DSS

GS(th)

V

GSS

DSS

D(ON)

DS(ON)

V

fs

V

V

= 0V, ID = 250 µA

V

GS

= VGS, ID = 250 µA

V

DS

= 0V, VGS = ±15V ±250 nA

DS

25

0.7 1.0 2.5

VDS = 20V, VGS = 0V 25

= 20V, VGS = 0V, TJ = 125 °C 250

DS

= 10V, VGS = 10V 1.2 A

DS

VGS = 7V, ID = 1.2A 220 250

V

= 10V, ID = 1.2A 180 220

GS

= 20V, ID = 1.2A 16 S

DS

1

AUG-18-2001

V

A

µ

mΩ

NIKO-SEM

N-Channel Logic Level Enhancement

Mode Field Effect Transistor

DYNAMIC

P01N02LMB

SOT-23 (M3)

Input Capacitance C
Output Capacitance C
Reverse Transfer Capacitance C
Total Gate Charge2 Q
Gate-Source Charge2 Q
Gate-Drain Charge2 Q
Turn-On Delay Time2 t
Rise Time2 t

Turn-Off Delay Time2 t
Fall Time2 t

120

iss

V

100

oss

rss

11

g

3.0

gs

gd

7

d(on)

r

d(off)

19

f

= 0V, VDS = 15V, f = 1MHz

GS

VDS = 0.5V

V

DS

≅ 1A, VGS = 10V, RGS = 50Ω

I

D

, VGS = 10V,

(BR)DSS

= 1A

I

D

= 15V, RL = 1Ω

85

5.8

20
13

pF

nC

nS

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current IS 1.2

A

Pulsed Current3 I
Forward Voltage1 V

12

SM

I

SD

= IS, VGS = 0V 1.3 V

F

Reverse Recovery Time trr 70 nS
Reverse Recovery Charge Qrr

1

Pulse test : Pulse Width

2

Independent of operating temperature.

3

Pulse width limited by maximum junction temperature.

300 µsec, Duty Cycle

≤

≤

2％.

F

0.22

C

µ

= IS, dlF/dt = 100A / µS

I

REMARK: THE PRODUCT MARKED WITH “102B”

2

AUG-18-2001