Nihon PHMB300B12 Technical data

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MODULE

IGBT

MODULE Single 300A 1200V

MODULE MODULE

CIRCUIT OUTLINE DRAWING

Single 300A 1200V

Single 300A 1200VSingle 300A 1200V

PHMB300B12

PHMB300B12

PHMB300B12PHMB300B12

Dimension(mm)

MAXMUM RATINGS

(Tc=25°C)

pproximat e Weight : 6 50

Item Symbol PHMB300B12 Unit

Collector- Emitter V oltage V
Gate - Emitter Voltage V

Collector Current
Collector Power Dissipation PC 1600 W

Junction T emperature R ange Tj -40 to +150 °C
Storage Temp erature Range T
Isolation Voltage Terminal to Base AC, 1 min.) V

Module Base t o Heatsink 3

Mounting Torqu e

Bus Bar to Main Terminals

DC IC 300

1 ms I

1200 V

CES

+/ - 20 V

GES

600

CP

-40 to +125 °C

stg

2500 V

ISO

F

TOR

M4 1.4

M6

3

A

N•m

ELECTRICAL CHARACTERISTICS (Tc=25°C)

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Collector-Emitter Cut-Off Current I
Gate-Emitter Leakage Current I
Collector- Emitter S aturation V oltage V
Gate-Emitter Threshold Voltage V
Input Capacitance Cies VCE=10V,VGE=0V,f=1MHz - 25000 -

Rise Time tr - 0.25 0.45

Switching Tim e

Turn-on Time ton - 0.40 0.70
Fall Time tf - 0.25 0.35
Turn-off Time t

VCE=1200V,VGE=0V - - 6.0

CES

VGE=+/- 20V,VCE=0V - - 1.0

GES

IC=300A,VGE=15V - 1.9 2.4

CE(sat)

VCE=5V,IC=300mA 4.0 - 8.0

GE(th)

V

= 600V

CC

R

= 2 ohm

L

RG= 1.3 ohm

off

VGE= +/- 15V

- 0.80 1.10

mA

µA

V
V

pF

µs

FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C)

Item Symbol Rated Value Unit

Forward Current

DC IF 300

1 ms I

600

FM

A

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Peak Forward Voltage VF I
Reverse Recovery Time trr

I

F

=300A,VGE=0V - 1.9 2.4

F

=300A,VGE=-10V,di/dt= 600A/µs

- 0.20 0.30

V

µs

THERMAL CHARACTERISTICS

Characteristic Symbol Test Condition Min. Typ. Max. Unit

Thermal Imp edance

IGBT - - 0.086

DIODE

R

Junction to Cas e

th(j-c)

- - 0.16

°C/W

PHMB300B12

600

500

(A)

400

C

300

200

Coll ector Current I

100

0

0246810

16

14

(V)

CE

12

10

Fig.1- Output Characteristics

VGE =20V

15V

12V

Col lector to E m itter V ol ta g e VCE

Fig.3- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage

IC=150A

300A

600A

(Typical)

(V)

(Typical)

TC=25℃

C=125℃

T

10V

9V

8V

7V

(V)

CE

16

14

(V)

CE

12

10

8

6

4

Coll ector to Emitter V oltage V

2

0

800

700

600

500

Fig .2- Collector to Emitter On Voltage
vs. Gate to Emitter Voltage

IC=100A 600A

300A

0 4 8 12 16 20

Gate to Em itter Voltag e VGE

Fig.4- Gate Charge vs. Collector to Emitter Voltage

RL=2Ω

=25℃

T

C

(Typical)

TC=25℃

(V)

(Typical)

16

14

Gate to Emitter Voltage V

12

10

8

6

4

Coll ector to Emitter V oltage V

2

0

0 4 8 12 16 20

Gate to Em itter Voltag e VGE

(V)

400

300

200

Collector to Emitter Voltage V

100

0

0 400 800 1200 1600 2000 2400

Total Gate Ch arge Qg

VCE=600V

400V

200V

(nC)

8

6

GE

(V)

4

2

0

Fig .5- Capaci tance vs . Collector to Emitter Voltage

100000

50000

20000

10000

(pF)

5000

2000

1000

Capacitance C

500

Cies

Coes

Cre s

(Typical)

VGE=0V
f=1 MH

Z

TC=25℃

(μ s)

Switching Time t

200

100

0.1 0.2 0.5 1 2 5 10 20 50 100 200

Collector to Emitter Voltage VCE

(V)

Fig.6- Collector Current vs. Switching Time

1.4

1.2

1

tOFF

0.8

tf

0.6

0.4

0.2

ON

t

r

t

0

0 50 100 150 200 250 300

Collector Current IC

(A)

(Typical)

VCC=600V
R

G=1.3 Ω

V

=± 15V

GE

T

C=25℃