Page 1
V-Chip Memory Back-Up Capacitors
NEXC Series
FEATURES
• DOUBLE LAYER CONSTRUCTION
• POWER BACK-UP FOR CMOS DEVICES
includes all homogeneous materials
RoHS
Compliant
• SURFACE MOUNTABLE V-CHIP STYLE
• LEAD-FREE FINISH
CHARACTERISTICS
Rated Voltage Range 3.5 & 5.5VDC
Rated Capacitance Range 0.047F ~ 1.0F (47,000µF ~ 1,000,000µF)
Operating Temp. Range
Capacitance Tolerance +80%/-20% (Z)
Load Life Test
+70°C 1,000 hours
Temperature Cycling
(5 cycles, -25 ~ +70°C
Humidity Resistance
(240 hours @ 40°C/90% RH)
-25°C ~ +70°C
∆ Capacitance Change Less than ±30% of initial measured value
Maximum ESR Less than 200% of the specifi ed maximum value
Current at 30 minutes Less than 200% of the specifi ed maximum value
∆ Capacitance Change Within +80%/-20% of specifi ed value
Maximum ESR Less than specifi ed maximum value
Current at 30 minutes Less than specifi ed maximum value
∆ Capacitance Change Less than ±20% of initial measured value
Maximum ESR Less than 120% of the specifi ed maximum value
Current at 30 minutes Less than 120% of the specifi ed maximum value
STANDARD VALUES AND SPECIFICATIONS
NIC P/N
NEXC104Z3.5V10.5X5.5TRF 0.1 3.5 - 0.090 50
NEXC224Z3.5V10.5X5.5TRF 0.22 3.5 - 0.200 25
NEXC474Z3.5V10.5X8.5TRF 0.47 3.5 - 0.420 25
NEXC473Z5.5V10.5X5.5TRF 0.047 5.5 4.2 0.071 50
NEXC104Z5.5V10.5X5.5TRF 0.1 5.5 4.2 0.150 25
NEXC224Z5.5V10.5X8.5TRF 0.22 5,5 4.2 0.330 25
NEXC474Z5.5V16X9.5TRF 0.47 5.5 4.2 0.710 13
NEXC105Z5.5V21X10.5TRF 1.0 5.5 4.2 1.500 7
Capacitance
Value (F)
Discharge
Working
Voltage
(VDC)
Holding
Voltage
(VDC min.)
Max. Current
@ 30 minutes
(mA)
Max. ESR
@ 1KHz
(Ω)
CASE DIMENSIONS (mm)
Case Size Dφ ± L max. A/B ±0.2 I W P
10.5 x 5.5 10.5 5.5 10.8 3.6 ±0.5 1.2 5.0
10.5 x 8.5 10.5 8.5 10.8 3.6 ±0.5 1.2 5.0
10.7 x 5.5 10.7 5.5 10.8 3.9 ±0.5 1.2 5.0
16 x 9.5 16.0 9.5 16.3 6.8 ±1.0 1.2 5.0
21 x 10.5 21.0 10.5 21.6 7.0 ±1.0 1.4 10.0
+ -
I
Dφ
0.3mm max.
PRECAUTIONS
WASHING is NOT RECOMMENDED. Additional precautions can be found at
If in doubt or uncertainty, please review your specifi c application - process details with NIC’s technical
www.niccomp.com/precautions
support personnel: [email protected]
w
L
P
B
I
I
A
NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com
233
Page 2
V-Chip Memory Back-Up Capacitors
NEXC Series
LAND PATTERN DIMENSIONS (mm)
Case
Diameter
10.5
10.7 5.0 4.9 2.5
16.0
21.0
R S T
5.0 4.6 2.5
5.0 10.0 2.5
10.0 10.5 3.5
COMPONENT OUTLINE
T
S
S
R
STANDARD RECOMMENDED REFLOW PROFILE
Peak Temperature
250
200
150
100
50
Temperature - Deg. C
25
0
Pre-heat
160°C 120 sec. max.
Time
Time above 200°C
30 sec. max.
(235°C for 10 sec.)
Cool Down
***New***
High Temperature Refl ow
+260°C
See page 235 for details
NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com
234
Page 3
V-Chip Memory Back-Up Capacitors
NEXCW Series
(Extended Temp Ranges)
FEATURES
• +260°C Lead Free Solder Compatible
• Extended Operating Range vs NEXC
High Temperature Refl ow
***New***
+260°C
• POWER BACK-UP FOR CMOS DEVICES
• SURFACE MOUNTABLE V-CHIP STYLE
CHARACTERISTICS
Rated Voltage 5.5VDC
Rated Capacitance
Operating Temp. Range
Capacitance Tolerance +80%/-20% (Z)
Load Life Test
+85°C 240 hours
Temperature Cycling
(5 cycles, -25 ~ +70°C
Humidity Resistance
(240 hours @ 40°C/90% RH)
0.1F (100,000µF)
-40°C ~ +85°C
∆ Capacitance Change Less than ±30% of initial measured value
Maximum ESR Less than 200% of the specifi ed maximum value
Current at 30 minutes Less than 200% of the specifi ed maximum value
∆ Capacitance Change Within +80%/-20% of specifi ed value
Maximum ESR Less than specifi ed maximum value
Current at 30 minutes Less than specifi ed maximum value
∆ Capacitance Change Less than ±20% of initial measured value
Maximum ESR Less than 120% of the specifi ed maximum value
Current at 30 minutes Less than 120% of the specifi ed maximum value
STANDARD VALUES AND SPECIFICATIONS
NIC P/N
NEXCW104Z5.5V10.7X5.5TRF 0.1 5.5 - 0.150 50
Capacitance
Value (F)
Discharge
Working
Voltage
(VDC)
Holding
Voltage
(VDC min.)
Max. Current
@ 30 minutes
(mA)
Max. ESR
@ 1KHz
(Ω)
CASE DIMENSIONS (mm)
Case Size Dφ ± L max. A/B ±0.2 I W P
10.7 x 5.5 10.7 5.5 10.8 3.9 ±0.5 1.2 5.0
HIGH TEMPERATURE REFLOW PROFILE
250
200
150
100
50
Temperature - Deg. C
25
0
1. The temperatures shown are the surface temperature values on the top of the can and on the capacitor terminals.
0.3mm max.
Pre-heat
150°C ~ 200°C 150 sec. max.
Time
Dφ
Time above
217°C
70 sec. max.
Time above 170°C
50 sec. max.
L
Peak Temperature
(260°C)
Cool Down
+ -
I
I
w
P
B
I
A
2. 2x refl ow process maximum. Capacitor should be allowed to return to room temperature before second refl ow process.
PRECAUTIONS
WASHING is NOT RECOMMENDED. Additional precautions can be found at
If in doubt or uncertainty, please review your specifi c application - process details with NIC’s technical
www.niccomp.com/precautions
support personnel: [email protected]
NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com
235
Page 4
V-Chip Memory Back-Up Capacitors
NEXC Series
CARRIER TAPE DIMENSIONS (mm)
Case Size A B D E F G P P
10.5 x 5.5 11.4 13.0 1.55 1.75 11.5 - 4.0 16.0 0.4 6.0 24.0 1,000
10.5 x 8.5 11.4 13.0 1.55 1.75 11.5 - 4.0 16.0 0.4 8.4 24.0 500
10.7 x 5.5 11.4 13.0 1.55 1.75 11.5 - 4.0 16.0 0.4 6.0 24.0 1,000
16 x 9.5 18.0 20.0 1.55 1.75 14.2 28.4 4.0 24.0 0.5 10.0 32.0 200
21 x 10.5 23.0 25.0 1.55 1.75 20.2 40.4 4.0 32.0 0.5 12.0 44.0 150
T
1
1
T
2
W Quantity/Reel
P
1.5∅ +0.1/-
D
-
W
B
+
A
P
1
REEL DIMENSIONS (mm)
Case Size A ± 2.0 B ± 1.0 C ± 0.5 D ± 0.8 E ± 0.5 W t
10.5 x 5.5 380 80.0 13.0 21.0 2.0 25.5 3.0
10.5 x 8.5 380 100.0 13.0 21.0 2.0 25.5 2.8
10.7 x 5.5 380 80.0 13.0 21.0 2.0 25.5 3.0
16 x 9.5 330 100.0 13.0 21.0 2.0 33.5 2.8
21 x 10.5 370 100.0 13.0 21.0 2.0 45.5 2.8
1.75 ±
E
Feeding
T
1
F
T
2
t
C
E
A
B
W
NIC COMPONENTS CORP. www.niccomp.com www.lowESR.com www.RFpassives.com www.SMTmagnetics.com
236
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