Page 1
DATA SHEET
µ
NPN SILICON RF TWIN TRANSISTOR
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A 6-PIN SUPER LEAD-LESS MINIMOLD
FEATURES
• Built-in low voltage operation, low phase distortion transistor suited for OSC applications
f
T = 4.5 GHz TYP., S21e
• Built-in 2 transistors (2 × 2SC5800)
• 6-pin super lead-less minimold package
BUILT-IN TRANSISTORS
2
= 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
Q1, Q2
PA895TS
Flat-lead 3-pin thin-type ultra super minimold part No. 2SC5800
ORDERING INFORMATION
Part Number Quantity Supplying Form
µ
PA895TS 50 pcs (Non reel) • 8 mm wide embossed taping
µ
PA895TS-T3 10 kpcs/reel • Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10335EJ02V0DS (2nd edition)
Date Published September 2003 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Compound Semiconductor Devices 2002, 2003
Page 2
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 9 V
Collector to Emitter Voltage VCEO 5.5 V
Emitter to Base Voltage VEBO 1.5 V
Collector Current IC 100 mA
Note
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
110 in 1 element Total Power Dissipation Ptot
130 in 2 elements
mW
2
Note Mounted on 1.08 cm
× 1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
µ
PA895TS
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA
DC Current Gain hFE
Gain Bandwidth Product (1) fT VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.5
Gain Bandwidth Product (2) fT VCE = 1 V, IC = 15 mA, f = 2 GHz 5.0 6.5
Insertion Power Gain (1) S21e2 VCE = 1 V, IC = 5 mA, f = 2 GHz 3.0 4.0
Insertion Power Gain (2) S21e2 VCE = 1 V, IC = 15 mA, f = 2 GHz 4.5 5.5
Noise Figure NF
Reverse Transfer Capacitance Cre
Note 1
VCE = 1 V, IC = 5 mA 100 120 145
CE = 1 V, IC = 10 mA, f = 2 GHz,
V
Z
S = Zopt
Note 2
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
− −
− −
−
−
µ
Notes 1. Pulse measurement: PW ≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank FB
Marking kP
hFE Value 100 to 145
600 nA
600 nA
−
−
−
−
−
1.9 2.5 dB
0.6 0.8 pF
GHz
GHz
dB
dB
2
Data Sheet PU10335EJ02V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
(pF)
re
0.8
250
200
(mW)
tot
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
2
× 1.0 mm (t) )
µ
PA895TS
f = 1 MHz
150
2 Elements in total
130
110
100
1 Element
50
Total Power Dissipation P
0
25 50 75 100 125 150
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
(mA)
C
1
0.1
0.01
Collector Current I
0.001
0.6
0.4
0.2
Reverse Transfer Capacitance C
0246810
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
(mA)
C
1
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
0.70.5 0.60.4 0.8 0.9 1.0
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
60
50
(mA)
C
40
30
20
Collector Current I
10
0
Collector to Emitter Voltage VCE (V)
Remark The graphs indicate nominal characteristics.
µ
400 A
360 A
320 A
µ
µ
µ
280 A
µ
240 A
µ
200 A
µ
160 A
120 A
80 A
IB = 40 A
4123 567
Data Sheet PU10335EJ02V0DS
µ
µ
µ
0.0001
0.70.5 0.60.4 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
3
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