Page 1
DATA SHEET
©
NPN SILICON RF TWIN TRANSISTOR
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
FEATURES
• Built-in low phase distortion transistor suited for OSC operation
fT = 5.0 GHz TYP., S
• Built-in 2 transistors (2 × 2SC5600)
• 6-pin lead-less minimold package
BUILT-IN TRANSISTORS
2
21e
= 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz
Q1, Q2
µµµµ
PA891TD
3-pin thin-type ultra super mini mold part No. 2SC5600
ORDERING INFORMATION
Part Number Quantity Supplying Form
µ
PA891TD 50 pcs (Non reel) • 8 mm wide embossed taping
µ
PA891TD-T3 10 kpcs/reel • Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark
ABSOLUTE MAXIMUM RATINGS (TA = +25
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation
Junction Temperature T
Storage Temperature T
To order evaluation samples, consult your NEC sales representative.
Unit sample quantity is 50 pcs.
C)
°°°°
Parameter Symbol Ratings Unit
CBO
CEO
EBO
C
Note
tot
P
j
stg
9V
5.5 V
1.5 V
100 mA
190 in 1 element
210 in 2 elements
150
−
65 to +150
mW
°
C
°
C
Mounted on 1.08 cm
Note
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
Document No. P15538EJ1V0DS00 (1st edition)
Date Published May 2001 NS CP(K)
Printed in Japan
2
× 1.0 mm (t) glass epoxy substrate
2001
Page 2
µµµµ
PA891TD
ELECTRICAL CHARACTERISTICS (TA = +25
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
Gain Bandwidth Product (1) f
Gain Bandwidth Product (2) f
Insertion Power Gain (1)
Insertion Power Gain (2)
Noise Figure NF
Reverse Transfer Capacitance
Notes 1.
Pulse measurement: PW ≤ 350
Collector to base capacitance when the emitter grounded
2.
CBO
VCB = 5 V, IE = 0 mA
EBO
VBE = 1 V, IC = 0 mA
Note 1
FE
h
S
S
C
VCE = 1 V, IC = 5 mA 100
T
VCE = 1 V, IC = 5 mA, f = 2 GHz 3.5 5.0
T
VCE = 1 V, IC = 15 mA, f = 2 GHz 5.5 6.5
2
21e
VCE = 1 V, IC = 5 mA, f = 2 GHz 3.5 4.0
2
21e
VCE = 1 V, IC = 15 mA, f = 2 GHz 4.5 5.5
CE
= 1 V, IC = 5 mA, f = 2 GHz,
V
S
Z
= Z
Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
s, Duty Cycle ≤ 2%
µ
hFE CLASSIFICATION
Rank FB
C)
°°°°
−−
−−
−
opt
−
−
1.5 2.5 dB
0.8 1.0 pF
600 nA
600 nA
160
−
−
−
−
GHz
GHz
dB
dB
−
Marking kH
hFE Value 100 to 160
2
Data Sheet P15538EJ1V0DS
Page 3
µµµµ
PA891TD
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
250
(mW)
tot
210
200
190
150
Per Element
100
50
Total Power Dissipation P
0
25 50 75 100 125 150
Mounted on Glass Epoxy Board
(1.08 cm
2 Elements in total
Ambient Temperature TA (˚C)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
CE
= 1 V
V
80
(mA)
C
60
2
× 1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
(pF)
re
0.8
0.6
0.4
0.2
Reverse Transfer Capacitance C
0246810
Collector to Base Voltage VCB (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
80
(mA)
C
60
C)
°°°°
f = 1 MHz
40
Collector Current I
20
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
50
µ
40
(mA)
C
30
20
10
Collector Current I
0
Collector to Emitter Voltage VCE (V)
200 A
µ
180 A
160 A
140 A
120 A
100 A
80 A
60 A
40 A
IB = 20 A
4268
40
Collector Current I
20
0
0.2 0.4 0.6 0.8 1.0
Base to Emitter Voltage VBE (V)
µ
µ
µ
µ
µ
µ
µ
µ
Data Sheet P15538EJ1V0DS
3
Page 4
µµµµ
PA891TD
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
VCE = 1 V
10.1 10 100
Collector Current IC (mA)
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
VCE = 2 V
10.1 10 100
Collector Current IC (mA)
4
Data Sheet P15538EJ1V0DS
Page 5
µµµµ
PA891TD
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 2 GHz
8
(GHz)
T
6
4
2
Gain Bandwidth Product f
0
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN vs. FREQUENCY
(dB)
2
|
21e
30
25
20
VCE = 1 V
I
C
= 5 mA
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 2 GHz
8
(GHz)
T
6
4
2
Gain Bandwidth Product f
0
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN vs. FREQUENCY
(dB)
2
|
21e
30
25
20
CE
= 2 V
V
I
C
= 5 mA
15
10
5
Insertion Power Gain |S
0
0.1 1 10
Frequency f (GHz)
INSERTION POWER GAIN vs. FREQUENCY
30
25
(dB)
2
|
21e
20
15
10
5
Insertion Power Gain |S
0
0.1 1 10
Frequency f (GHz)
CE
= 1 V
V
C
= 15 mA
I
15
10
5
Insertion Power Gain |S
0
0.1 1 10
Frequency f (GHz)
INSERTION POWER GAIN vs. FREQUENCY
30
25
(dB)
2
|
21e
20
15
10
5
Insertion Power Gain |S
0
0.1 1 10
Frequency f (GHz)
CE
= 2 V
V
C
= 15 mA
I
Data Sheet P15538EJ1V0DS
5
Page 6
µµµµ
PA891TD
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 1 V
f = 1 GHz
15
(dB)
2
|
21e
10
|S
5
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
15
VCE = 1 V
f = 2 GHz
MAG
|S
(dB)
2
|
21e
10
5
21e
21e
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
VCE = 2 V
MAGMSG
f = 1 GHz
MAGMSG
15
(dB)
2
|
2
|
21e
10
2
|S
21e
|
5
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
15
VCE = 2 V
f = 2 GHz
10
(dB)
2
|
21e
2
|
5
MAG
|S
21e
2
|
0
–5
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 4 GHz
5
(dB)
2
|
21e
0
–5
–10
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
MAG
|S
21e
0
–5
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 4 GHz
5
(dB)
2
|
21e
2
|
0
–5
–10
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
MAG
|S
21e
2
|
6
Data Sheet P15538EJ1V0DS
Page 7
µµµµ
PA891TD
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 1 GHz
8
G
a
6
4
Noise Figure NF (dB)
2
NF
0
1 10 100
C
Collector Current I
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 1.5 GHz
8
G
6
a
20
16
(dB)
a
12
8
Associated Gain G
4
0
20
16
(dB)
a
12
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 1 GHz
8
G
a
6
4
Noise Figure NF (dB)
2
NF
0
1 10 100
C
Collector Current I
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 1.5 GHz
8
G
6
a
20
16
(dB)
a
12
8
Associated Gain G
4
0
20
16
(dB)
a
12
4
Noise Figure NF (dB)
2
NF
0
1 10 100
C
Collector Current I
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 2 GHz
8
6
G
NF
a
C
(mA)
4
Noise Figure NF (dB)
2
0
1 10 100
Collector Current I
8
Associated Gain G
4
0
20
16
(dB)
a
12
8
Associated Gain G
4
0
4
Noise Figure NF (dB)
2
NF
0
1 10 100
C
Collector Current I
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 2 GHz
8
6
4
Noise Figure NF (dB)
2
0
1 10 100
Collector Current I
G
NF
a
C
(mA)
8
Associated Gain G
4
0
20
16
(dB)
a
12
8
Associated Gain G
4
0
Remark
The graphs indicate nominal characteristics.
Data Sheet P15538EJ1V0DS
7
Page 8
S-PARAMETERS
When K ≥ 1, the MAG (Maximum Available Power Gain) is used. MAG =
Note
When K < 1, the MSG (Maximum Stable Power Gain) is used. MSG =
CE
V
= 1 V, IC = 1 mA, ZO = 50
Frequency S
(GHz) MAG. A NG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
0.969
0.946
0.906
0.868
0.843
0.806
0.778
0.760
0.749
0.741
0.732
0.731
0.734
0.734
0.736
0.739
0.743
0.744
0.745
0.749
0.751
0.752
0.756
0.761
0.762
0.766
0.764
0.768
0.755
0.749
0.781
0.789
µµµµ
PA891TD
21
S
(K –
(K2 – 1) )
12
S
21
S
12
S
√√√√
Ω
11
(deg.)
20.0
−
39.8
−
58.9
−
75.3
−
90.0
−
103.7
−
115.5
−
125.9
−
135.1
−
143.3
−
150.5
−
157.1
−
162.8
−
167.8
−
172.3
−
176.3
−
179.9
176.4
172.8
170.0
167.1
164.4
161.4
158.7
156.0
153.3
150.5
147.9
144.8
141.3
123.7
101.1
S
21
MAG. ANG.
3.596
3.407
3.167
2.906
2.676
2.427
2.212
2.016
1.840
1.700
1.571
1.451
1.356
1.266
1.190
1.121
1.054
1.000
0.947
0.903
0.871
0.831
0.799
0.769
0.738
0.711
0.686
0.658
0.625
0.605
0.468
0.394
(deg.)
166.2
153.4
140.9
129.3
119.9
110.7
103.1
96.3
89.9
84.0
78.9
74.0
69.6
65.4
61.5
57.7
54.5
51.2
48.2
45.1
43.0
40.5
38.4
36.1
34.0
32.4
30.4
29.1
27.0
24.8
14.0
12.0
S
12
MAG. ANG.
0.045
0.086
0.119
0.145
0.164
0.176
0.184
0.188
0.190
0.189
0.187
0.183
0.179
0.174
0.168
0.163
0.156
0.150
0.143
0.137
0.130
0.125
0.119
0.115
0.111
0.107
0.106
0.106
0.109
0.113
0.181
0.286
(deg.)
76.0
67.1
56.7
47.6
39.8
33.1
27.3
22.4
18.1
14.6
11.4
8.8
6.5
4.5
3.1
1.9
1.1
0.9
0.9
1.8
2.9
4.4
6.6
8.9
12.2
15.8
20.0
24.2
28.0
32.5
51.3
40.3
S
22
MAG. ANG.
0.989
0.949
0.898
0.839
0.783
0.728
0.686
0.647
0.618
0.593
0.576
0.560
0.551
0.543
0.540
0.535
0.537
0.534
0.537
0.535
0.539
0.538
0.543
0.539
0.542
0.543
0.545
0.545
0.542
0.539
0.579
0.626
(deg.)
−
14.7
−
21.1
−
26.5
−
30.9
−
34.8
−
37.9
−
41.0
−
43.9
−
46.6
−
49.4
−
52.0
−
54.8
−
57.5
−
60.2
−
62.8
−
65.4
−
68.0
−
70.5
−
72.9
−
75.5
−
78.0
−
80.5
−
83.0
−
85.9
−
88.8
−
91.7
−
94.4
−
97.5
−
101.1
−
134.6
−
164.0
−
7.4
K MAG/MSG
0.092
0.087
0.128
0.186
0.226
0.282
0.333
0.382
0.428
0.477
0.530
0.580
0.621
0.680
0.729
0.791
0.844
0.920
0.997
1.076
1.134
1.240
1.302
1.386
1.474
1.555
1.636
1.691
1.861
1.923
1.464
1.283
(dB)
19.04
15.99
14.25
13.01
12.13
11.39
10.79
10.31
9.87
9.55
9.25
8.99
8.80
8.62
8.50
8.38
8.29
8.25
8.21
6.52
6.03
5.29
4.97
4.56
4.15
3.83
3.45
3.09
2.24
1.75
0.09
1.81
−
Note
8
Data Sheet P15538EJ1V0DS
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