Page 1
DATA SHEET
NPN SILICON RF TWIN TRANSISTOR
NPN SILICON RF TRANSISTOR (WITH 2 DIFFERENT ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD
FEATURES
• Low voltage operation
• 2 different built-in transistors (2SC5737, 2SC5745)
Q1: Low noise transistor
NF = 1.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz
Q2: Low phase distortion transistor suited for OSC operation
fT = 5.5 GHz TYP., S
• 6-pin lead-less minimold package
2
21e
= 4.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
µµµµ
PA855TD
BUILT-IN TRANSISTORS
Q1 Q2
3-pin thin-type ultra super mini mold part No. 2SC5737 2SC5745
ORDERING INFORMATION
Part Number Quantity Supplying Form
µ
PA855TD 50 pcs (Non reel) • 8 mm wide embossed taping
µ
PA855TD-T3 10 kpcs/reel • Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark
To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Because this product uses high-frequency technology, avoid excessive static electricity, etc.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10098EJ01V0DS (1st edition)
Date Published March 2002 CP(K)
Printed in Japan
NEC Compound Semiconductor Devices 2002
Page 2
µµµµ
PA855TD
ABSOLUTE MAXIMUM RATINGS (TA = +25
Parameter Symbol Ratings Unit
Q1 Q2
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation
CBO
CEO
EBO
C
Note
tot
P
30 100 mA
90 190
210 in 2 elements
Junction Temperature T
Storage Temperature T
2
Mounted on 1.08 cm
Note
× 1.0 mm (t) glass epoxy PCB
j
stg
ELECTRICAL CHARACTERISTICS (TA = +25
(1) Q1
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
Gain Bandwidth Product f
Insertion Power Gain
Noise Figure NF
Reverse Transfer Capacitance
CBO
VCB = 5 V, IE = 0 mA
EBO
VEB = 1 V, IC = 0 mA
Note 1
FE
h
S
C
VCE = 1 V, IC = 10 mA 70
T
VCE = 1 V, IC = 10 mA, f = 2 GHz 10.0 12.0
2
21e
VCE = 1 V, IC = 10 mA, f = 2 GHz 7.0 9.0
CE
= 1 V, IC = 3 mA, f = 2 GHz,
V
S
Z
= Z
Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz
C)
°°°°
515V
35.5V
21.5V
mW
150
65 to +150
−
C)
°°°°
C
°
C
°
−−
−−
−
opt
−
100 nA
100 nA
−
140
−
−
GHz
dB
1.5 2.0 dB
0.4 0.7 pF
−
(2) Q2
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
Collector Cut-off Current I
Emitter Cut-off Current I
DC Current Gain
h
Gain Bandwidth Product f
Insertion Power Gain
Noise Figure NF
Reverse Transfer Capacitance
Notes 1.
Pulse measurement: PW ≤ 350
Collector to base capacitance when the emitter grounded
2.
C
2
CBO
VCB = 5 V, IE = 0 mA
EBO
VEB = 1 V, IC = 0 mA
Note 1
FE
S
VCE = 1 V, IC = 10 mA 100
T
VCE = 1 V, IC = 10 mA, f = 2 GHz 4.0 5.5
2
21e
VCE = 1 V, IC = 10 mA, f = 2 GHz 3.0 4.5
CE
= 1 V, IC = 10 mA, f = 2 GHz,
V
S
opt
Z
= Z
Note 2
re
VCB = 0.5 V, IE = 0 mA, f = 1 MHz 0.65 0.75 0.85 pF
s, Duty Cycle ≤ 2%
µ
Data Sheet PU10098EJ01V0DS
−−
−−
−
−
2.0 3.0 dB
100 nA
100 nA
145
−
−
GHz
dB
−
Page 3
hFE CLASSIFICATION
Rank FB
Marking vN
hFE Value of Q1 70 to 140
hFE Value of Q2 100 to 145
µµµµ
PA855TD
Data Sheet PU10098EJ01V0DS
3
Page 4
µµµµ
PA855TD
TYPICAL CHARACTERISTICS (Unless otherwise specified, TA = +25
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
300
250
2 Elements in total
210
200
190
Q2
150
100
90
Q1
50
Total Power Dissipation Ptot (mW)
0 25 50 75 100 125 150
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
(pF)
re
0.4
Mounted on Glass Epoxy PCB
(1.08 cm
Ambient Temperature TA (˚C)
2
× 1.0 mm (t) )
Q1 Q2
f = 1 MHz
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
1.0
(pF)
re
0.8
C)
°°°°
f = 1 MHz
0.3
0.2
0.1
Reverse Transfer Capacitance C
012345
Collector to Base Voltage VCB (V)
0.6
0.4
0.2
Reverse Transfer Capacitance C
0246810
Collector to Base Voltage VCB (V)
4
Data Sheet PU10098EJ01V0DS
Page 5
Q1 Q2
µµµµ
PA855TD
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
(mA)
C
1
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
(mA)
C
1
0.70.5 0.60.4 0.8 0.9 1.0
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
(mA)
C
1
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 2 V
10
(mA)
C
1
0.70.5 0.60.4 0.8 0.9 1.0
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
0.70.5 0.60.4 0.8 0.9 1.0
0.1
0.01
Collector Current I
0.001
0.0001
Base to Emitter Voltage VBE (V)
0.70.5 0.60.4 0.8 0.9 1.0
Data Sheet PU10098EJ01V0DS
5
Page 6
Q1 Q2
µµµµ
PA855TD
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
µ
500 A
35
30
(mA)
C
25
20
15
10
Collector Current I
5
0
µ
450 A
µ
400 A
µ
350 A
2134
Collector to Emitter Voltage VCE (V)
µ
300 A
µ
250 A
µ
200 A
µ
150 A
µ
100 A
µ
IB = 50 A
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
80
70
60
(mA)
C
50
40
30
20
Collector Current I
10
0
µ
500 A
Collector to Emitter Voltage VCE (V)
µ
450 A
µ
400 A
µ
350 A
µ
300 A
250 A
4312 567
µ
µ
200 A
µ
150 A
µ
100 A
µ
IB = 50 A
6
Data Sheet PU10098EJ01V0DS
Page 7
Q1 Q2
µµµµ
PA855TD
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
VCE = 1 V
10.1 10 100
Collector Current IC (mA)
VCE = 2 V
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
100
DC Current Gain h
10
DC CURRENT GAIN vs.
COLLECTOR CURRENT
1 000
FE
VCE = 1 V
10.1 10 100
Collector Current IC (mA)
VCE = 2 V
100
DC Current Gain h
10
10.1 10 100
Collector Current IC (mA)
100
DC Current Gain h
10
10.1 10 100
Collector Current IC (mA)
Data Sheet PU10098EJ01V0DS
7
Page 8
Q1 Q2
µµµµ
PA855TD
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
VCE = 1 V
f = 2 GHz
14
(GHz)
T
12
10
8
6
4
2
Gain Bandwidth Product f
0
1 10 100
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
16
VCE = 2 V
f = 2 GHz
14
(GHz)
T
12
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 2 GHz
8
(GHz)
T
6
4
2
Gain Bandwidth Product f
0
1 10 100
Collector Current IC (mA)
GAIN BANDWIDTH PRODUCT
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 2 GHz
8
(GHz)
T
10
8
6
4
2
Gain Bandwidth Product f
0
1 10 100
Collector Current IC (mA)
6
4
2
Gain Bandwidth Product f
0
1 10 100
Collector Current IC (mA)
8
Data Sheet PU10098EJ01V0DS
Page 9
Q1 Q2
µµµµ
PA855TD
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
(dB)
2
MSG
20
15
10
|S21e|
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|
0.1 1 10
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
(dB)
2
20
MSG
2
MAG
MAG
VCE = 1 V
C = 10 mA
I
VCE = 2 V
I
C = 10 mA
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
2
MSG
25
(dB)
20
15
10
5
|S21e|
Insertion Power Gain |S21e|
0.1 1 10
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Frequency f (GHz)
INSERTION POWER GAIN,
MAG, MSG vs. FREQUENCY
35
30
25
(dB)
2
20
MSG
MAG
2
MAG
VCE = 1 V
C = 10 mA
I
VCE = 2 V
I
C = 10 mA
15
10
|S21e|
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|
0.1 1 10
Frequency f (GHz)
15
2
10
5
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S21e|
0.1 1 10
|S21e|
2
Frequency f (GHz)
Data Sheet PU10098EJ01V0DS
9
Page 10
Q1 Q2
µµµµ
PA855TD
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
20
16
(dB)
2
|
21e
12
8
4
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0
1 10 100
Collector Current I
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
16
(dB)
2
|
21e
12
MAGMSG
MSG
|S
21e
2
|
C
(mA)
VCE = 1 V
f = 1 GHz
VCE = 1 V
f = 2 GHz
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
MAGMSG
|S
(dB)
2
|
21e
16
12
8
4
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
16
12
(dB)
2
|
21e
8
MAG
21e
2
|
VCE = 1 V
f = 1 GHz
VCE = 1 V
f = 2 GHz
|S
8
21e
4
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current I
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
16
12
(dB)
2
|
8
21e
4
0
–4
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
1 10 100
Collector Current I
MAG
|S
21e
2
|
2
|
C
(mA)
C
(mA)
VCE = 1 V
f = 4 GHz
4
|S
21e
0
–4
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
12
8
(dB)
2
|
4
21e
0
–4
–8
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
1 10 100
Collector Current I
MAG
|S
21e
2
|
2
|
C
VCE = 1 V
f = 4 GHz
(mA)
10
Data Sheet PU10098EJ01V0DS
Page 11
Q1 Q2
µµµµ
PA855TD
INSERTION POWER GAIN, MSG
vs. COLLECTOR CURRENT
20
16
(dB)
2
|
21e
12
8
4
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
0
1 10 100
MSG
Collector Current IC (mA)
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
16
(dB)
2
|
12
21e
8
INSERTION POWER GAIN, MAG, MSG
vs. COLLECTOR CURRENT
20
MAGMSG
(dB)
2
|
21e
16
12
2
|S
21e
|
2
|S
21e
|
8
4
VCE = 2 V
f = 1 GHz
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Insertion Power Gain |S
1 10 100
VCE = 2 V
f = 1 GHz
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
VCE = 2 V
16
f = 2 GHz
(dB)
2
|
21e
12
MAG
8
|S
4
21e
MAGMSG
2
|S
21e
|
VCE = 2 V
f = 2 GHz
2
|
4
Insertion Power Gain |S
1 10 100
0
Maximum Available Power Gain MAG (dB)
Maximum Stable Power Gain MSG (dB)
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
16
12
(dB)
2
|
8
21e
4
0
–4
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
MAG
|S
21e
0
–4
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
INSERTION POWER GAIN, MAG
vs. COLLECTOR CURRENT
VCE = 2 V
12
f = 4 GHz
8
(dB)
2
|
4
21e
2
|
0
MAG
|S
21e
–4
–8
Maximum Available Power Gain MAG (dB)
Insertion Power Gain |S
1 10 100
Collector Current IC (mA)
VCE = 2 V
f = 4 GHz
2
|
Data Sheet PU10098EJ01V0DS
11
Page 12
Q1 Q2
µµµµ
PA855TD
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 1 GHz
8
G
a
6
4
Noise Figure NF (dB)
2
NF
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 1.5 GHz
8
G
a
6
4
20
16
(dB)
a
12
8
Associated Gain G
4
0
20
16
(dB)
a
12
8
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
VCE = 1 V
f = 1 GHz
G
a
6
4
2
Noise Figure NF (dB)
NF
0
1 10 100
C
Collector Current I
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
VCE = 1 V
f = 1.5 GHz
6
4
G
a
16
12
(dB)
a
8
4
Associated Gain G
0
16
12
(dB)
a
8
Noise Figure NF (dB)
2
NF
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
VCE = 1 V
f = 2 GHz
8
6
4
Noise Figure NF (dB)
2
0
1 10 100
Collector Current I
G
NF
a
C
(mA)
Associated Gain G
4
0
20
16
(dB)
a
12
8
Associated Gain G
4
0
2
Noise Figure NF (dB)
NF
0
1 10 100
C
Collector Current I
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
VCE = 1 V
f = 2 GHz
6
G
NF
a
C
(mA)
4
2
Noise Figure NF (dB)
0
1 10 100
Collector Current I
4
Associated Gain G
0
16
12
(dB)
a
8
4
Associated Gain G
0
12
Data Sheet PU10098EJ01V0DS
Page 13
Q1 Q2
µµµµ
PA855TD
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 1 GHz
8
6
4
Noise Figure NF (dB)
2
0
1 10 100
Collector Current I
G
NF
a
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 1.5 GHz
8
6
4
G
a
20
16
(dB)
a
12
8
Associated Gain G
4
0
20
16
(dB)
a
12
8
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
VCE = 2 V
f = 1 GHz
G
a
6
4
2
Noise Figure NF (dB)
NF
0
1 10 100
C
Collector Current I
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
VCE = 2 V
f = 1.5 GHz
6
4
G
a
16
12
(dB)
a
8
4
Associated Gain G
0
16
12
(dB)
a
8
Noise Figure NF (dB)
2
NF
0
1 10 100
Collector Current I
C
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
10
VCE = 2 V
f = 2 GHz
8
G
NF
a
C
(mA)
6
4
Noise Figure NF (dB)
2
0
1 10 100
Collector Current I
Associated Gain G
4
0
20
16
(dB)
a
12
8
Associated Gain G
4
0
2
Noise Figure NF (dB)
NF
0
1 10 100
C
Collector Current I
(mA)
NOISE FIGURE, ASSOCIATED GAIN
vs. COLLECTOR CURRENT
8
VCE = 2 V
f = 2 GHz
6
G
a
4
2
Noise Figure NF (dB)
0
1 10 100
Collector Current I
NF
C
(mA)
4
Associated Gain G
0
16
12
(dB)
a
8
4
Associated Gain G
0
Remark
The graphs indicate nominal characteristics.
Data Sheet PU10098EJ01V0DS
13
Page 14
S-PARAMETERS Q1
VCE = 1 V, IC = 1 mA, ZO = 50
Frequency S
(GHz) MAG. ANG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
0.961
0.961
0.921
0.914
0.894
0.854
0.821
0.782
0.743
0.714
0.682
0.658
0.633
0.607
0.583
0.567
0.556
0.536
0.528
0.525
0.524
0.521
0.517
0.513
0.513
0.511
0.510
0.507
0.504
0.499
0.515
0.556
VCE = 1 V, IC = 3 mA, ZO = 50
Frequency S
(GHz) MAG. ANG.
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2.0
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
4.0
5.0
0.878
0.871
0.808
0.773
0.726
0.665
0.620
0.576
0.541
0.517
0.491
0.477
0.465
0.451
0.442
0.438
0.438
0.430
0.426
0.435
0.439
0.438
0.436
0.439
0.440
0.443
0.442
0.445
0.444
0.442
0.478
0.524
11
11
Ω
(deg.)
−
−
15.5
−
24.3
−
32.7
−
40.6
−
48.3
−
56.5
−
64.0
−
71.7
−
79.5
−
87.0
−
94.6
−
101.3
−
108.3
−
114.2
−
120.7
−
126.5
−
132.0
−
136.4
−
141.8
−
146.5
−
150.5
−
154.4
−
158.8
−
162.4
−
166.4
−
169.2
−
173.0
−
175.7
−
179.3
146.5
113.6
Ω
(deg.)
−
13.6
−
26.1
−
39.5
−
52.1
−
63.9
−
74.3
−
84.9
−
94.2
−
103.6
−
112.2
−
120.7
−
128.3
−
134.9
−
142.0
−
148.1
−
154.2
−
158.9
−
164.5
−
167.7
−
171.9
−
175.3
−
178.2
179.1
175.2
172.4
169.6
167.3
164.3
162.5
159.0
132.4
105.6
8.4
S
MAG. ANG.
3.504
3.429
3.361
3.329
3.294
3.179
3.093
2.979
2.853
2.743
2.625
2.525
2.402
2.298
2.193
2.097
2.014
1.926
1.849
1.769
1.713
1.666
1.604
1.557
1.498
1.457
1.422
1.377
1.342
1.304
1.036
0.823
MAG. ANG.
8.711
8.365
7.891
7.470
7.046
6.469
6.014
5.541
5.127
4.764
4.409
4.137
3.852
3.610
3.396
3.198
3.034
2.874
2.751
2.605
2.501
2.417
2.317
2.238
2.144
2.067
2.020
1.949
1.894
1.832
1.395
1.101
21
(deg.)
171.5
166.5
160.1
153.0
146.8
139.9
134.1
127.8
122.7
117.4
112.0
106.9
102.5
97.6
93.8
89.7
86.2
82.2
79.5
76.1
73.4
70.9
67.9
66.0
63.5
60.4
58.4
56.0
54.1
51.9
30.8
12.1
S
21
(deg.)
168.3
159.1
150.1
140.8
132.9
125.4
119.3
113.2
108.5
103.9
99.4
95.4
91.9
88.1
85.3
82.1
79.7
76.6
74.5
71.9
69.7
67.9
65.4
63.9
62.1
59.6
58.0
56.1
54.5
52.8
34.7
17.6
S
MAG. ANG.
0.024
0.049
0.074
0.096
0.118
0.138
0.155
0.169
0.182
0.192
0.201
0.209
0.215
0.219
0.223
0.225
0.226
0.226
0.226
0.226
0.226
0.225
0.224
0.223
0.221
0.220
0.219
0.218
0.219
0.217
0.211
0.243
MAG. ANG.
0.024
0.047
0.067
0.085
0.100
0.112
0.121
0.128
0.135
0.140
0.144
0.148
0.152
0.154
0.157
0.159
0.162
0.164
0.167
0.170
0.172
0.175
0.178
0.180
0.183
0.186
0.189
0.192
0.197
0.200
0.239
0.293
12
(deg.)
80.6
79.5
75.1
70.1
65.1
60.1
55.8
51.5
47.5
43.9
40.4
37.5
34.2
31.4
29.1
26.7
24.6
23.0
21.4
20.2
19.0
18.0
17.1
16.1
15.5
13.9
13.4
12.6
12.9
12.7
15.9
19.4
S
12
(deg.)
82.5
74.9
68.6
62.2
57.0
52.4
48.8
45.7
43.1
41.1
39.5
38.3
36.9
35.8
35.3
34.7
34.2
34.0
33.7
33.8
33.5
33.6
33.5
33.5
33.5
32.8
32.8
32.5
32.8
32.7
31.9
24.4
µµµµ
PA855TD
S
MAG. ANG.
0.996
0.984
0.975
0.952
0.933
0.892
0.864
0.821
0.787
0.744
0.716
0.681
0.658
0.627
0.609
0.581
0.563
0.540
0.526
0.508
0.497
0.484
0.479
0.466
0.461
0.455
0.449
0.443
0.433
0.423
0.367
0.373
MAG. ANG.
0.978
0.944
0.903
0.841
0.785
0.712
0.659
0.598
0.552
0.505
0.472
0.438
0.416
0.388
0.373
0.348
0.336
0.316
0.306
0.291
0.285
0.273
0.270
0.261
0.258
0.252
0.248
0.242
0.236
0.227
0.213
0.251
22
(deg.)
−
4.3
−
8.6
−
12.7
−
17.1
−
21.2
−
25.5
−
29.3
−
33.2
−
36.9
−
40.4
−
43.8
−
46.9
−
49.9
−
52.5
−
55.1
−
57.2
−
59.4
−
60.9
−
63.0
−
64.4
−
66.4
−
67.7
−
69.7
−
70.9
−
72.7
−
74.6
−
76.1
−
77.0
−
78.4
−
79.5
−
101.8
−
129.5
S
22
(deg.)
−
8.4
−
16.6
−
24.0
−
31.1
−
37.3
−
43.0
−
47.9
−
52.4
−
56.7
−
60.5
−
64.1
−
67.7
−
70.6
−
73.6
−
75.8
−
78.2
−
80.3
−
82.1
−
84.2
−
85.8
−
88.2
−
89.5
−
91.8
−
92.9
−
94.8
−
96.2
−
97.8
−
98.7
−
100.6
−
101.7
−
133.1
−
161.8
14
Data Sheet PU10098EJ01V0DS
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