NEC UPA831TC DATA SHEET

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PRELIMINARY DATA SHEET

UPA831TCNPN SILICON EPITAXIAL TWIN TRANSISTOR

FEATURES

• SMALL PACKAGE OUTLINE:

1.5 mm x 1.1 mm, 33% smaller than conventional
SOT-363 package

• LOW HEIGHT PROFILE:

Just 0.55 mm high

• FLAT LEAD STYLE:

Reduced lead inductance improves electrical
performance

• TWO DIFFERENT DIE TYPES:

Q1 - Ideal oscillator transistor
Q2 - Ideal buffer amplifier transistor

DESCRIPTION

The UPA831TC contains one NE856 and one NE681 NPN
high frequency silicon bipolar chip. NEC's new ultra small TC
package is ideal for all portable wireless applications where
reducing board space is a prime consideration. Each transistor
chip is independently mounted and easily configured for oscil­lator/buffer amplifier and other applications.

OUTLINE DIMENSIONS (Units in mm)

Package Outline TC

(TOP VIEW)

1.50±0.1

1.10±0.1

1

1.50±0.1

Note: Pin 1 is the lower left most pin
as the package lettering is oriented
and read left to right.

0.96

0.48
2

0.48
34

0.55±0.05

+0.1

0.20

-0.05

6

5

PIN OUT

1. Collector (Q1)

2. Emitter (Q1)

3. Collector (Q2)

4. Base (Q2)

5. Emitter (Q2)

6. Base (Q1)

+0.1

0.11

-0.05

ELECTRICAL CHARACTERISTICS (TA = 25°C)

PART NUMBER UPA831TC

PACKAGE OUTLINE TC

SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX

ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA1
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA1

hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA 70 140

fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 3.0 4.5

Q1

Cre Feedback Capacitance2 at VCB = 3 V, lE = 0, f = 1 MHz pF 0.7 1.5

2

|S21E|

NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 1.2 2.5

ICBO Collector Cutoff Current at VCB = 10 V, IE = 0 µA 0.8
IEBO Emitter Cutoff Current at VEB = 1 V, IC = 0 µA 0.8

hFE DC Current Gain1 at VCE = 3 V, IC = 7 mA 70 150

fT Gain Bandwidth at VCE = 3 V, IC = 7 mA, f = 1 GHz GHz 4.5 7.0

Q2

Cre Feedback Capacitance2 at VCB = 3 V, IE = 0, f = 1 MHz pF 0.9

|S21E|

NF Noise Figure at VCE = 3 V, IC = 7 mA, f = 1 GHz dB 1.4 2.7

Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %.

2. Collector to base capacitance when measured with capacitance meter (automatic balanced bridge method), with emitter connected to

Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 7 9

2

Insertion Power Gain at VCE = 3 V, IC =7 mA, f = 1 GHz dB 10 12

guard pin of capacitances meter.

California Eastern Laboratories

UPA831TC

ABSOLUTE MAXIMUM RATINGS

1

(TA = 25°C)

SYMBOLS PARAMETERS UNITS RATINGS

Q1 Q2

CBO Collector to Base Voltage V

V
V

CEO Collector to Emitter Voltage V
EBO Emitter to Base Voltage V

V

I

C Collector Current mA

PT Total Power Dissipation

1

mW

20 20
12 10
3 1.5
100 65
TBD TBD

TBD

TJ Junction Temperature °C

TSTG Storage Temperature °C

150 150

-65 to +150

Note: 1. Operation in excess of any one of these parameters may

result in permanent damage.

ORDERING INFORMATION

PART NUMBER QUANTITY PACKAGING

UPA831TC-T1 3000 Tape & Reel

CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • [phone] • Telex 34-6393 • FAX [phone]

DATA SUBJECT TO CHANGE WITHOUT NOTICE

EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS

24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM

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