Page 1
DATA SHEET
µ
NPN SILICON RF TWIN TRANSISTOR
NPN SILICON RF TRANSISTOR (WITH 2 ELEMENTS)
IN A 6-PIN LEAD-LESS MINIMOLD (M16, 1208 PACKAGE)
FEATURES
• Built-in low phase distortion transistor suited for OSC applications
f
T = 9.0 GHz TYP., S21e
NF = 1.3 dB TYP. @ V
• Built-in 2 transistors (2 × 2SC5436)
• 6-pin lead-less minimold (M16, 1208 package)
BUILT-IN TRANSISTORS
2
= 7.5 dB TYP. @ VCE = 1 V, IC = 10 mA, f = 2 GHz
CE = 1 V, IC = 3 mA, f = 2 GHz
Q1, Q2
PA828TD
3-pin thin-type ultra super minimold part No. 2SC5436
ORDERING INFORMATION
Part Number Quantity Supplying Form
µ
PA828TD 50 pcs (Non reel) • 8 mm wide embossed taping
µ
PA828TD-T3 10 kpcs/reel • Pin 1 (Q1 Collector), Pin 6 (Q1 Base) face the perforation side of the tape
Remark To order evaluation samples, contact your nearby sales office.
The unit sample quantity is 50 pcs.
Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge.
The information in this document is subject to change without notice. Before using this document, please confirm that
this is the latest version.
Not all devices/types available in every country. Please check with local NEC Compound Semiconductor Devices
representative for availability and additional information.
Document No. PU10402EJ02V0DS (2nd edition)
Date Published September 2003 CP(K)
Printed in Japan
The mark shows major revised points.
NEC Compound Semiconductor Devices 2003
Page 2
ABSOLUTE MAXIMUM RATINGS (TA = +25°C)
Parameter Symbol Ratings Unit
Collector to Base Voltage VCBO 5 V
Collector to Emitter Voltage VCEO 3 V
Emitter to Base Voltage VEBO 2 V
Collector Current IC 30 mA
Total Power Dissipation Ptot
180 in 2 elements
Junction Temperature Tj 150 °C
Storage Temperature Tstg −65 to +150 °C
Note
90 in 1 element mW
2
Note Mounted on 1.08 cm
× 1.0 mm (t) glass epoxy PCB
ELECTRICAL CHARACTERISTICS (TA = +25°C)
Parameter Symbol Test Conditions MIN. TYP. MAX. Unit
µ
PA828TD
Collector Cut-off Current ICBO VCB = 5 V, IE = 0 mA
Emitter Cut-off Current IEBO VEB = 1 V, IC = 0 mA
DC Current Gain hFE
Gain Bandwidth Product (1) fT VCE = 1 V, IC = 10 mA, f = 2 GHz 7.0 9.0
Gain Bandwidth Product (2) fT VCE = 2 V, IC = 20 mA, f = 2 GHz 9.0 11.0
Insertion Power Gain (1) S21e2 VCE = 1 V, IC = 10 mA, f = 2 GHz 6.0 7.5
Insertion Power Gain (2) S21e2 VCE = 2 V, IC = 20 mA, f = 2 GHz 7.0 8.5
Noise Figure (1) NF
Noise Figure (2) NF
Reverse Transfer Capacitance Cre
hFE Ratio fT
Note 1
VCE = 2 V, IC = 20 mA 70
CE = 1 V, IC = 3 mA, f = 2 GHz,
V
Z
S = Zopt
CE = 2 V, IC = 3 mA, f = 2 GHz,
V
Z
S = Zopt
Note 2
VCB = 2 V, IE = 0 mA, f = 1 MHz
CE = 2 V, IC = 20 mA,
V
h
FE1 : Smaller value of Q1 and Q2,
h
FE2 : Larger value of Q1 and Q2
− −
− −
−
−
−
0.85
1.3 2.0 dB
1.3 2.0 dB
0.4 0.8 pF
µ
Notes 1. Pulse measurement: PW ≤ 350
s, Duty Cycle ≤ 2%
2. Collector to base capacitance when the emitter grounded
hFE CLASSIFICATION
Rank FB
100 nA
100 nA
−
− − −
140
−
−
−
−
GHz
GHz
dB
dB
−
Marking kL
hFE Value 70 to 140
2
Data Sheet PU10402EJ02V0DS
Page 3
TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified)
300
250
200
2 Elements in total
180
150
Per Element
100
90
50
Total Power Dissipation Ptot (mW)
0
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
Mounted on Glass Epoxy PCB
(1.08 cm
25 50 75 100 125 150
Ambient Temperature TA (˚C)
2
× 1.0 mm (t) )
REVERSE TRANSFER CAPACITANCE
vs. COLLECTOR TO BASE VOLTAGE
0.5
0.4
0.3
0.2
0.1
Reverse Transfer Capacitance Cre (pF)
0
Collector to Base Voltage VCB (V)
µ
PA828TD
f = 1 MHz
24315
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
100
VCE = 1 V
10
1
0.1
0.01
Collector Current IC (mA)
0.001
0.0001
0.60.50.4 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
40
µ
35
30
25
20
15
10
Collector Current IC (mA)
500 A
5
µ
450 A
400 A
350 A
µ
µ
µ
300 A
µ
250 A
µ
200 A
µ
150 A
µ
100 A
µ
IB = 50 A
100
0.1
0.01
Collector Current IC (mA)
0.001
0.0001
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
VCE = 2 V
10
1
0.60.50.4 0.7 0.8 0.9 1.0
Base to Emitter Voltage VBE (V)
0
Collector to Emitter Voltage VCE (V)
2134
Remark The graphs indicate nominal characteristics.
Data Sheet PU10402EJ02V0DS
3
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