NEC UPA826TF-T1, UPA826TF, UPA826TC Datasheet

DATA SHEET

NPN SILICON RF TWIN T RANSISTOR

NPN SILICON EPITAXIAL TWIN TRANSISTOR

(WITH BUILT-IN 2

FLAT-LEAD 6-PIN THIN -TYPE ULTRA SUPER MINIMOLD

FEATURES

• Low noise and high gain

• Operable at low voltage

re

• Small feedback capacitance: C

• Flat-lead 6-pin thin-type ultra super minimold package

• Built-in 2 transistors (2 × 2SC5010)

ORDERING INFORMATION

= 0.4 pF TYP.

2SC5010)

××××

µµµµ

PA826TC

Part Number Package Quantity Supplying Form

µ

PA826TC Loose products

µ

PA826TC-T1

Remark

ABSOLUTE MAXIMUM RATINGS (TA = +25

Parameter Symbol Ratings Unit
Collector to Base Voltage V
Collector to Emitter Voltage V
Emitter to Base Voltage V
Collector Current I
Total Power Dissipation

Junction Temperature T
Storage Temperature T

Flat-lead 6-pin
thin-type ultra
super minimold

To order evaluation samples, please contact your local NEC sales office. (Part number for sample order:

PA826TC. Unit sample quantity is 50 pcs).

µ

P

(50 pcs)

Taping products

(3 kp/reel)

CBO

CEO

EBO

C

Note

T

180 in 1 element
230 in 2 elements

j

stg

−

Embossed tape 8 mm wide.
Pin 6 (Q1 Base), Pin 5 (Q2 Emitter), Pin 4 (Q2 Base) face to perforation
side of the tape.

C)

°°°°

9V
6V
2V

30 mA

mW

150 °C

65 to 150 °C

Mounted on 1.08 cm

Note

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P14553EJ1V0DS00 (1st edition)
Date Published November 1999 N CP(K)
Printed in Japan

2

× 1.0 mm glass epoxy substrate.

Caution Electro-static sensitive devices

1999©

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter Symbol Conditions MIN. TYP. MAX. Unit

µµµµ

PA826TC

Collector Cutoff Current I
Emitter Cutoff Current I
DC Current Gain h
Gain Bandwidth Product f
Feedback Capacitance C
Insertion Power Gain |S

CBO

EBO

21e

VCB = 10 V, IE = 0
VEB = 1 V, IC = 0

FE

T

VCE = 3 V, IC = 7 mA
VCE = 3 V, IC = 7 mA, f = 1 GHz 10.0 12.0
VCB = 3 V, IE = 0, f = 1 MHz

re

2

|

VCE = 3 V, IC = 7 mA, f = 1 GHz 7.0 8.5

Note 1

Noise Figure NF VCE = 3 V, IC = 7 mA, f = 1 GHz

Notes 1.

Pulse Measurement: PW ≤ 350
Capacitance between collector and base measured with a capacitance meter (auto−balancing bridge

2.

s, Duty Cycle ≤ 2%

µ

method). Emitter should be connected to the guard pin of capacitance meter.

hFE CLASSIFICATION

Rank KB
Marking 83
hFE Value 75 to 150

Note 2

−−

−−

75

−

−

−

0.4 0.7 pF

1.5 2.5 dB

0.1

0.1

150

−

−

A

µ

A

µ

GHz

dB

2

Data Sheet P14553EJ1V0DS00

µµµµ

PA826TC

TYPICAL CHARACTERISTICS (TA = +25

TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE

230
200

180

100

Total Power Dissipation PT (mW)

20

16

12

Collector Current IC (mA)

0

8

4

0

2 Elements in total Free Air

Per
Element

0 50 100 150

Ambient Temperature TA (°C)

COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE

IB = 160 A
IB = 140 A
IB = 120 A
IB = 100 A
IB = 80 A
IB = 60 A
IB = 40 A
IB = 20 A

0123456

Collector to Emitter Voltage VCE (V)

C)

°°°°

COLLECTOR CURRENT vs.
DC BASE VOLTAGE

50

VCE = 3 V

40

30

20

10

Collector Current IC (mA)

0

0 0.5 1.0

DC Base Voltage VBE (V)

DC CURRENT GAIN vs.
COLLECTOR CURRENT

1 000

µ
µ
µ

µ
µ
µ
µ
µ

100

DC Current Gain hFE

10

0.1 1 10 100
Collector Current IC (mA)

VCE = 3 V

GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT

18.00
VCE = 3 V
f = 2 GHz

16.00

14.00

12.00

10.00

Gain Bandwidth Product fT (GHz)

8.00
1 10 100

Collector Current IC (mA)

12.00

(dB)

2

10.00

8.00

6.00

4.00

Insertion Power Gain S21e

2.00

Data Sheet P14553EJ1V0DS00

INSERTION POWER GAIN vs.
COLLECTOR CURRENT

VCE = 3 V
f = 2 GHz

1 10 100

Collector Current IC (mA)

3

NOISE FIGURE vs. COLLECTOR CURRENT

10.00
VCE = 3 V
f = 2 GHz

8.00

6.00

4.00

0.400

(pF)

re

0.300

0.200

FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE

f = 1 MHz

µµµµ

PA826TC

Noise Figure NF (dB)

2.00

0.00
1 10 100

Collector Current IC (mA)

INSERTION POWER GAIN vs. FREQUENCY

30.0
VCE = 3 V

C

= 10 mA

I

25.0

(dB)

2



21e

20.0

15.0

10.0

5.0

Insertion Power Gain S

0.0

0.1 1.0 10.0
Frequency f (GHz)

0.100

Feedback Capacitance C

0.000
1 10 100

Collector to Base Voltage VCB (V)

4

Data Sheet P14553EJ1V0DS00